JP2003158124A5 - - Google Patents

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Publication number
JP2003158124A5
JP2003158124A5 JP2001353902A JP2001353902A JP2003158124A5 JP 2003158124 A5 JP2003158124 A5 JP 2003158124A5 JP 2001353902 A JP2001353902 A JP 2001353902A JP 2001353902 A JP2001353902 A JP 2001353902A JP 2003158124 A5 JP2003158124 A5 JP 2003158124A5
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JP
Japan
Prior art keywords
compound semiconductors
film
mind
semiconductor device
kept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001353902A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003158124A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001353902A priority Critical patent/JP2003158124A/ja
Priority claimed from JP2001353902A external-priority patent/JP2003158124A/ja
Publication of JP2003158124A publication Critical patent/JP2003158124A/ja
Publication of JP2003158124A5 publication Critical patent/JP2003158124A5/ja
Pending legal-status Critical Current

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JP2001353902A 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法 Pending JP2003158124A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001353902A JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001353902A JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Publications (2)

Publication Number Publication Date
JP2003158124A JP2003158124A (ja) 2003-05-30
JP2003158124A5 true JP2003158124A5 (enExample) 2004-11-18

Family

ID=19165833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001353902A Pending JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Country Status (1)

Country Link
JP (1) JP2003158124A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266083A (ja) * 2006-03-27 2007-10-11 Renesas Technology Corp 半導体装置およびその製造方法
JP5673107B2 (ja) * 2011-01-05 2015-02-18 富士電機株式会社 炭化珪素半導体デバイスの作製方法

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