JP2003158124A - 化合物半導体上への炭素系薄膜の形成方法 - Google Patents

化合物半導体上への炭素系薄膜の形成方法

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Publication number
JP2003158124A
JP2003158124A JP2001353902A JP2001353902A JP2003158124A JP 2003158124 A JP2003158124 A JP 2003158124A JP 2001353902 A JP2001353902 A JP 2001353902A JP 2001353902 A JP2001353902 A JP 2001353902A JP 2003158124 A JP2003158124 A JP 2003158124A
Authority
JP
Japan
Prior art keywords
carbon
film
thin film
compound semiconductor
based thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001353902A
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English (en)
Japanese (ja)
Other versions
JP2003158124A5 (enExample
Inventor
Minoru Tokuchi
實 渡久地
Akira Higa
晃 比嘉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Corp filed Critical Japan Science and Technology Corp
Priority to JP2001353902A priority Critical patent/JP2003158124A/ja
Publication of JP2003158124A publication Critical patent/JP2003158124A/ja
Publication of JP2003158124A5 publication Critical patent/JP2003158124A5/ja
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2001353902A 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法 Pending JP2003158124A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001353902A JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001353902A JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Publications (2)

Publication Number Publication Date
JP2003158124A true JP2003158124A (ja) 2003-05-30
JP2003158124A5 JP2003158124A5 (enExample) 2004-11-18

Family

ID=19165833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001353902A Pending JP2003158124A (ja) 2001-11-20 2001-11-20 化合物半導体上への炭素系薄膜の形成方法

Country Status (1)

Country Link
JP (1) JP2003158124A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266083A (ja) * 2006-03-27 2007-10-11 Renesas Technology Corp 半導体装置およびその製造方法
JP2012142484A (ja) * 2011-01-05 2012-07-26 National Institute Of Advanced Industrial & Technology 炭化珪素半導体デバイスの作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266083A (ja) * 2006-03-27 2007-10-11 Renesas Technology Corp 半導体装置およびその製造方法
JP2012142484A (ja) * 2011-01-05 2012-07-26 National Institute Of Advanced Industrial & Technology 炭化珪素半導体デバイスの作製方法

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