JP2003151916A - レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 - Google Patents

レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法

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Publication number
JP2003151916A
JP2003151916A JP2002225628A JP2002225628A JP2003151916A JP 2003151916 A JP2003151916 A JP 2003151916A JP 2002225628 A JP2002225628 A JP 2002225628A JP 2002225628 A JP2002225628 A JP 2002225628A JP 2003151916 A JP2003151916 A JP 2003151916A
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JP
Japan
Prior art keywords
laser
irradiation
substrate
irradiation surface
laser beams
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002225628A
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English (en)
Japanese (ja)
Other versions
JP2003151916A5 (enExample
Inventor
Koichiro Tanaka
幸一郎 田中
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002225628A priority Critical patent/JP2003151916A/ja
Publication of JP2003151916A publication Critical patent/JP2003151916A/ja
Publication of JP2003151916A5 publication Critical patent/JP2003151916A5/ja
Withdrawn legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002225628A 2001-08-03 2002-08-02 レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 Withdrawn JP2003151916A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002225628A JP2003151916A (ja) 2001-08-03 2002-08-02 レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-237097 2001-08-03
JP2001237097 2001-08-03
JP2002225628A JP2003151916A (ja) 2001-08-03 2002-08-02 レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009136617A Division JP5227900B2 (ja) 2001-08-03 2009-06-05 半導体装置の作製方法

Publications (2)

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JP2003151916A true JP2003151916A (ja) 2003-05-23
JP2003151916A5 JP2003151916A5 (enExample) 2008-09-04

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ID=26619970

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Country Status (1)

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JP (1) JP2003151916A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165716A (ja) * 2005-12-15 2007-06-28 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及び結晶化方法
US7879700B2 (en) 2003-02-25 2011-02-01 Samsung Electronics Co., Ltd. Crystallization apparatus and method of amorphous silicon
KR101521104B1 (ko) * 2009-05-15 2015-05-20 주식회사 디엠에스 선택적 에미터 형성용 확산장치
CN109891554A (zh) * 2016-10-06 2019-06-14 株式会社日本制钢所 激光照射装置以及半导体器件制造方法
CN114078978A (zh) * 2020-12-18 2022-02-22 帝尔激光科技(无锡)有限公司 太阳能电池选择性发射极的制备方法和制备设备
WO2022102538A1 (ja) * 2020-11-11 2022-05-19 株式会社日本製鋼所 レーザ照射装置、及び半導体装置の製造方法
CN116230502A (zh) * 2021-12-02 2023-06-06 细美事有限公司 用于处理基板的装置和用于处理基板的方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879700B2 (en) 2003-02-25 2011-02-01 Samsung Electronics Co., Ltd. Crystallization apparatus and method of amorphous silicon
JP2007165716A (ja) * 2005-12-15 2007-06-28 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及び結晶化方法
KR101521104B1 (ko) * 2009-05-15 2015-05-20 주식회사 디엠에스 선택적 에미터 형성용 확산장치
CN109891554A (zh) * 2016-10-06 2019-06-14 株式会社日本制钢所 激光照射装置以及半导体器件制造方法
US11676818B2 (en) 2016-10-06 2023-06-13 Jsw Aktina System Co., Ltd Laser irradiation apparatus and method for manufacturing semiconductor device
CN109891554B (zh) * 2016-10-06 2023-06-30 Jsw阿克迪纳系统有限公司 激光照射装置以及半导体器件制造方法
WO2022102538A1 (ja) * 2020-11-11 2022-05-19 株式会社日本製鋼所 レーザ照射装置、及び半導体装置の製造方法
JP2022077121A (ja) * 2020-11-11 2022-05-23 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、及び半導体装置の製造方法
JP7579112B2 (ja) 2020-11-11 2024-11-07 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、及び半導体装置の製造方法
CN114078978A (zh) * 2020-12-18 2022-02-22 帝尔激光科技(无锡)有限公司 太阳能电池选择性发射极的制备方法和制备设备
CN116230502A (zh) * 2021-12-02 2023-06-06 细美事有限公司 用于处理基板的装置和用于处理基板的方法

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