JP2003151916A - レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 - Google Patents
レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法Info
- Publication number
- JP2003151916A JP2003151916A JP2002225628A JP2002225628A JP2003151916A JP 2003151916 A JP2003151916 A JP 2003151916A JP 2002225628 A JP2002225628 A JP 2002225628A JP 2002225628 A JP2002225628 A JP 2002225628A JP 2003151916 A JP2003151916 A JP 2003151916A
- Authority
- JP
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- Prior art keywords
- laser
- irradiation
- substrate
- irradiation surface
- laser beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002225628A JP2003151916A (ja) | 2001-08-03 | 2002-08-02 | レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-237097 | 2001-08-03 | ||
| JP2001237097 | 2001-08-03 | ||
| JP2002225628A JP2003151916A (ja) | 2001-08-03 | 2002-08-02 | レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009136617A Division JP5227900B2 (ja) | 2001-08-03 | 2009-06-05 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003151916A true JP2003151916A (ja) | 2003-05-23 |
| JP2003151916A5 JP2003151916A5 (enExample) | 2008-09-04 |
Family
ID=26619970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002225628A Withdrawn JP2003151916A (ja) | 2001-08-03 | 2002-08-02 | レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003151916A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165716A (ja) * | 2005-12-15 | 2007-06-28 | Advanced Lcd Technologies Development Center Co Ltd | レーザー結晶化装置及び結晶化方法 |
| US7879700B2 (en) | 2003-02-25 | 2011-02-01 | Samsung Electronics Co., Ltd. | Crystallization apparatus and method of amorphous silicon |
| KR101521104B1 (ko) * | 2009-05-15 | 2015-05-20 | 주식회사 디엠에스 | 선택적 에미터 형성용 확산장치 |
| CN109891554A (zh) * | 2016-10-06 | 2019-06-14 | 株式会社日本制钢所 | 激光照射装置以及半导体器件制造方法 |
| CN114078978A (zh) * | 2020-12-18 | 2022-02-22 | 帝尔激光科技(无锡)有限公司 | 太阳能电池选择性发射极的制备方法和制备设备 |
| WO2022102538A1 (ja) * | 2020-11-11 | 2022-05-19 | 株式会社日本製鋼所 | レーザ照射装置、及び半導体装置の製造方法 |
| CN116230502A (zh) * | 2021-12-02 | 2023-06-06 | 细美事有限公司 | 用于处理基板的装置和用于处理基板的方法 |
-
2002
- 2002-08-02 JP JP2002225628A patent/JP2003151916A/ja not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7879700B2 (en) | 2003-02-25 | 2011-02-01 | Samsung Electronics Co., Ltd. | Crystallization apparatus and method of amorphous silicon |
| JP2007165716A (ja) * | 2005-12-15 | 2007-06-28 | Advanced Lcd Technologies Development Center Co Ltd | レーザー結晶化装置及び結晶化方法 |
| KR101521104B1 (ko) * | 2009-05-15 | 2015-05-20 | 주식회사 디엠에스 | 선택적 에미터 형성용 확산장치 |
| CN109891554A (zh) * | 2016-10-06 | 2019-06-14 | 株式会社日本制钢所 | 激光照射装置以及半导体器件制造方法 |
| US11676818B2 (en) | 2016-10-06 | 2023-06-13 | Jsw Aktina System Co., Ltd | Laser irradiation apparatus and method for manufacturing semiconductor device |
| CN109891554B (zh) * | 2016-10-06 | 2023-06-30 | Jsw阿克迪纳系统有限公司 | 激光照射装置以及半导体器件制造方法 |
| WO2022102538A1 (ja) * | 2020-11-11 | 2022-05-19 | 株式会社日本製鋼所 | レーザ照射装置、及び半導体装置の製造方法 |
| JP2022077121A (ja) * | 2020-11-11 | 2022-05-23 | Ｊｓｗアクティナシステム株式会社 | レーザ照射装置、及び半導体装置の製造方法 |
| JP7579112B2 (ja) | 2020-11-11 | 2024-11-07 | Ｊｓｗアクティナシステム株式会社 | レーザ照射装置、及び半導体装置の製造方法 |
| CN114078978A (zh) * | 2020-12-18 | 2022-02-22 | 帝尔激光科技(无锡)有限公司 | 太阳能电池选择性发射极的制备方法和制备设备 |
| CN116230502A (zh) * | 2021-12-02 | 2023-06-06 | 细美事有限公司 | 用于处理基板的装置和用于处理基板的方法 |
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