JP2003137687A - Method of growing silicon single crystal - Google Patents
Method of growing silicon single crystalInfo
- Publication number
- JP2003137687A JP2003137687A JP2001339189A JP2001339189A JP2003137687A JP 2003137687 A JP2003137687 A JP 2003137687A JP 2001339189 A JP2001339189 A JP 2001339189A JP 2001339189 A JP2001339189 A JP 2001339189A JP 2003137687 A JP2003137687 A JP 2003137687A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- single crystal
- phosphorus
- specific resistance
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】この発明は、半導体材料とし
て使用されるシリコンウェーハ用のｐ型シリコン単結晶
の育成方法に関し、棒状単結晶の長さ方向に所要の比抵
抗値を有するシリコンウェーハがより多く得られ歩留り
にすぐれたシリコン単結晶の育成方法に関する。
【０００２】
【従来の技術】所望の比抵抗をもつシリコン単結晶をチ
ョクラルスキー法で育成する場合、シリコンと添加剤の
種類により決まる物質固有の偏析係数を考慮する必要が
あり、一般的に引き上げられた単結晶インゴットの後部
になるほど比抵抗は低下するため、所望の比抵抗範囲が
比較的狭い場合には、その所望の範囲を逸脱することに
なり、逸脱した部分は製品として使用できなくなる。
【０００３】そこで、ボロン等のｐ型不純物の効果を相
殺し、見かけの偏析係数を大きくする方法として、ｎ型
不純物を添加する方法が種々提案（特開平１０−２９８
９４号、特許第２８０４４５６号及び特許第２８０４４
５５号、特許第２７５６４７６号など）されている。こ
れにより１本のインゴットからより多くの所望の比抵抗
値をもつウェーハがより多く得られ、歩留りの向上を図
ることができる。
【０００４】
【発明が解決しようとする課題】特開平１０−２９８９
４号に記載の単結晶シリコンの比抵抗調整方法では、石
英ルツボの底部に比抵抗の低下を打ち消す添加剤を含有
させる必要があるが、初期融解時にはその添加物を融解
させてはならず、実際に行おうとした場合、煩雑な方法
を取らざるを得ない、または育成途中で融液中に添加剤
を添加しなければならないため、何らかの治具が必要で
あり、簡便な方法ではない。
【０００５】特許第２８０４４５６号及び特許第２８０
４４５５号に記載の方法は、ＢまたはＰを添加したＳｉ
融液に融点近傍の熱膨張係数を小さくする元素（Ｇａ，
ＳｂまたはＩｎ）を追加添加、あるいはＧａまたはＳｂ
を添加したＳｉ融液に融点近傍の熱膨張係数を大きくす
る元素（ＢまたはＰ）を追加添加して引き上げることに
より、成長方向に不純物濃度が均一な単結晶を育成する
ことができるとされている。
【０００６】特許第２７５６４７６号に記載の方法は、
ＣＺ又はＦＺ方法にて育成して得たウェーハ面内の比抵
抗値の均一性を改善するために、特定の計算式で添加す
る不純物量を求めてこれを添加する。しかし、この方法
でｎ型不純物を添加して引き上げ率が大きい場合には、
インゴットのボトム部付近において比抵抗値が減少から
増加に移る逆転する部分が現れる場合がある。従って、
インゴットの比抵抗値保証が困難となり、ウェーハ化工
程において全数の比抵抗値を測定する必要が生じて煩雑
な工程フローとなる場合がある。
【０００７】この発明は、ボロンを主添加剤とするｐ型
の棒状シリコン単結晶の長さ方向に所要の比抵抗値を有
するシリコンウェーハを得ることを目的とし、またでき
るだけ簡便な手段で見かけの偏析係数を大きくして、シ
リコン単結晶の比抵抗値を均一にして歩留りを向上させ
ることが可能なシリコン単結晶の育成方法を提供するこ
とを目的とする。
【０００８】
【課題を解決するための手段】発明者は、ｎ型不純物を
添加する手段でｐ型シリコン単結晶の見かけの偏析係数
を大きくする方法において、シリコン単結晶の長さ方向
に比抵抗値が均一となるようにするｎ型不純物の添加手
段を目的に種々検討した結果、初期融液中にリンを単に
所定量添加するという簡単な方法で目的が達成できるこ
とを知見し、この発明を完成した。
【０００９】すなわち、この発明は、チョクラルスキー
法で、原料シリコンを溶融してボロンを主添加剤として
含有するｐ型シリコン単結晶を育成する方法において、
初期融液が含む絶対ボロン濃度（ａｔｏｍｓ／ｃｃ）の
２５〜３５％となるように、初期融液中にリンを添加す
ること、換言すれば、主添加剤として含有されるボロン
の見かけのボロン偏析係数が０．８３〜０．８８となる
ようにリンを初期融液に添加することを特徴とするシリ
コン単結晶の育成方法である。
【００１０】
【発明の実施の形態】この発明は、初期融液に絶対ボロ
ン濃度（ａｔｏｍｓ／ｃｃ）の２５〜３５％のリンを添
加すると、ボロンの見かけの偏析係数は０．８３〜０．
８８になり、通常製造する単結晶のほぼ全域にわたり所
望の比抵抗値を得ることができ、かつインゴットのボト
ム付近で比抵抗が逆転する部分が現れない効果が得られ
ることを特徴とする。
【００１１】すなわち、この発明において、シリコン単
結晶の比抵抗値は引上げ方向に均一であることを特徴と
するが、引上げた単結晶のトップからボトム方向に、例
えば、単結晶の長さの９０％以下において目標比抵抗値
から−３０％以内の値を示すなどの所要範囲内で減少か
ら増加する等の現象がなく、減少傾向のみを示すことが
望ましい。
【００１２】なお、ボロンの見かけの偏析係数とは、比
抵抗値とその測定位置から、ボロンのみが存在すると仮
定して求めた場合の偏析係数である。シリコン中にある
ボロン・リンはそれぞれ独立した偏析を行う。フォトル
ミネッセンス等でボロンおよびリンの絶対量を測定しそ
れぞれの偏析係数を求めると、Ｃボロン≫Ｃリンの場合
も、Ｃボロン＞Ｃリンの場合も０．７５、０．３５に近
い値となる。ところが比抵抗値とその測定位置から偏析
係数を求めるとボロンにより発生した空孔とリンにより
発生した電子が打ち消し合うため、上記とは異なる偏析
係数となる。この場合、ボロンのみが存在すると仮定し
ている。具体的には、Ｃボロン≫Ｃリンの場合には、圧
倒的に空孔の数が多いため０．７５に近い値となるがＣ
ボロン＞Ｃリンの場合には、空孔の数と電子の数が近似
（特に結晶後半）してくるため電子による空孔の打ち治
し量が無視できなくなり、比抵抗値とその測定位置から
偏析係数を求めると０．７５より大きな値となる。
【００１３】この発明において、初期融液に、それが含
む絶対ボロン濃度（ａｔｏｍｓ／ｃｃ）の２５〜３５％
のリンを添加するが、２５％未満では、ボロンの見かけ
の偏析係数は０．８３以下となり、所望の比抵抗値を得
られる範囲が限られ、リンを添加する効果が得難く、３
５％を越えると、ボロンの見かけの偏析係数は０．８８
以上となり、ほぼ全範囲にわたり所望の比抵抗値を得ら
れるが、インゴットのボトム付近で比抵抗が逆転する部
分が現れるか、あるいはそれに準ずる部分が現れるため
好ましくない。
【００１４】詳述すると、ボロンの偏析係数は０．７５
程度、リンの偏析係数は０．３５程度、偏析係数が小さ
いほど、単結晶中に取り込まれる不純物濃度は小さくな
るが、これは偏析係数が小さいほど、融液中の不純物濃
度の濃縮が進むことを意味する。ボロン濃度とリン濃度
が近似している場合、特にインゴットのボトム付近でリ
ンの濃縮が無視できなくなる。
【００１５】ボロン濃度とリン濃度が近似していない
（Ｃボロン≫Ｃリン）通常の場合は、ボトムに向かうに
従いボロン・リンともに増加し、またボロン濃度とリン
濃度の差が大きいため見かけの偏析係数も変わらない。
ところがボロン濃度とリン濃度が近似している場合、特
にＣボロン＞Ｃリンで近似している場合には見かけの偏
析係数も変わってくる。この時ボトムに向かうに従いボ
ロン・リンともに増加するが、リンの増加量がボロンの
増加量を超えるとボロンの見かけの偏析係数が局所的に
負になり比抵抗の逆転現象が起こる。よって、不純物の
組合せの種類により特定の最適な値が存在することにな
る。
【００１６】この発明において、チョクラルスキー法に
おける引上げ条件としては、特に限定されないが、初期
融液の絶対ボロン濃度は２．７×１０16ａｔｏｍｓ／ｃ
ｃ以下であることが好ましい。
【００１７】
【実施例】比較例１
１４０ｋｇのシリコンを溶融してｐ型１５〜２０Ωｃｍ
の８インチ単結晶を育成する目的で、ボロン添加量は、
５．７７×１０19ａｔｏｍｓ／ｃｃ相当のボロンを含む
ドーパントを添加する条件で育成した。
【００１８】各引上率部におけるシリコン中のボロンお
よびリン濃度を図１Ａに、ボロンとリンの濃度差を図１
Ｂに、各引上率部における比抵抗値を図１Ｃに示す。そ
の結果、全体の７０％しか所望の比抵抗値を得られなか
った。また、シリコンに対するボロンの偏析係数は、
０．７５であった。
【００１９】比較例２
比較例１と同様に１４０ｋｇのシリコンを溶融してｐ型
１５〜２０Ωｃｍの８インチ単結晶を育成するとき、初
期融液が含む絶対ボロン濃度（ａｔｏｍｓ／ｃｃ）の４
０％のリンを添加したところ、図３にボロンおよびリン
濃度、ボロンとリンの濃度差、比抵抗値を示すように全
体の１００％において所望の比抵抗値を得ることはでき
たが、インゴットのボトム部付近で比抵抗値が逆転する
部分が現れた。
【００２０】実施例１
比較例１と同様に１４０ｋｇのシリコンを溶融してｐ型
１５〜２０Ωｃｍの８インチ単結晶を育成するとき、初
期融液が含む絶対ボロン濃度（ａｔｏｍｓ／ｃｃ）の３
１％のリンを添加して引上げを行った。
【００２１】その結果、図２にボロンおよびリン濃度、
ボロンとリンの濃度差、比抵抗値を示すように、全体の
９０％において所望の比抵抗値を得ることができた。ま
た、リンを添加しないときのシリコンに対するボロンの
偏析係数は、０．７５であったが、３１％のリンを添加
した場合は０．８５であった。
【００２２】
【発明の効果】この発明は、ボロンを主添加剤とするｐ
型シリコン単結晶の育成に際し、特定量のリンを添加す
るという簡便な手段で見かけの偏析係数を大きくでき、
シリコン単結晶の比抵抗値を長さ方向に均一に所要値と
することが可能で、歩留りを向上させることができる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for growing a p-type silicon single crystal for a silicon wafer used as a semiconductor material, and relates to a method for growing a bar-shaped single crystal in the longitudinal direction. More specifically, the present invention relates to a method for growing a silicon single crystal having a higher yield and a higher yield. [0002] When a silicon single crystal having a desired specific resistance is grown by the Czochralski method, it is necessary to consider a segregation coefficient inherent to a substance determined by the type of silicon and an additive. Since the specific resistance decreases toward the rear of the pulled single crystal ingot, if the desired specific resistance range is relatively narrow, the specific resistance will deviate from the desired range, and the deviated portion cannot be used as a product. . Therefore, as a method of canceling the effect of a p-type impurity such as boron and increasing an apparent segregation coefficient, various methods of adding an n-type impurity have been proposed (JP-A-10-298).
No. 94, Japanese Patent No. 2804456 and Japanese Patent No. 28044
No. 55, Japanese Patent No. 2756476, etc.). As a result, more wafers having more desired specific resistance values can be obtained from one ingot, and the yield can be improved. [0004] Japanese Patent Laid-Open No. Hei 10-2989
In the method for adjusting the specific resistance of single-crystal silicon described in No. 4, it is necessary to include an additive for canceling the decrease in specific resistance at the bottom of the quartz crucible, but the additive must not be melted at the time of initial melting. When actually trying to do so, a complicated method must be used, or an additive must be added to the melt during the growth, so some jig is required, and this is not a simple method. [0005] Japanese Patent No. 2804456 and Japanese Patent No. 280
No. 4455 describes a method of adding Si to which B or P is added.
Elements that reduce the coefficient of thermal expansion near the melting point (Ga,
Sb or In) or Ga or Sb
It is said that a single crystal having a uniform impurity concentration in the growth direction can be grown by additionally adding an element (B or P) that increases the coefficient of thermal expansion near the melting point to the Si melt to which is added. I have. [0006] The method described in Japanese Patent No. 2756476 is
In order to improve the uniformity of the in-plane specific resistance value obtained by growing by the CZ or FZ method, the amount of impurities to be added is obtained by a specific calculation formula and is added. However, when an n-type impurity is added by this method and the pulling rate is large,
In the vicinity of the bottom of the ingot, there may be a reversal part where the specific resistance value changes from decreasing to increasing. Therefore,
It is difficult to guarantee the specific resistance value of the ingot, and it is necessary to measure all the specific resistance values in the wafer forming process, which may result in a complicated process flow. An object of the present invention is to obtain a silicon wafer having a required specific resistance value in the longitudinal direction of a p-type rod-shaped silicon single crystal containing boron as a main additive, and to provide an apparently simple means. It is an object of the present invention to provide a method for growing a silicon single crystal capable of increasing the segregation coefficient, making the specific resistance of the silicon single crystal uniform, and improving the yield. SUMMARY OF THE INVENTION The present inventors have proposed a method of increasing the apparent segregation coefficient of a p-type silicon single crystal by means of adding an n-type impurity. As a result of various studies for the purpose of adding n-type impurities to make the value uniform, it was found that the object can be achieved by a simple method of simply adding a predetermined amount of phosphorus to the initial melt, and the present invention completed. That is, the present invention relates to a method of growing a p-type silicon single crystal containing boron as a main additive by melting raw silicon by a Czochralski method.
Adding phosphorus to the initial melt so as to be 25 to 35% of the absolute boron concentration (atoms / cc) contained in the initial melt, in other words, the apparent boron of boron contained as the main additive This is a method for growing a silicon single crystal, wherein phosphorus is added to an initial melt so that a segregation coefficient becomes 0.83 to 0.88. DETAILED DESCRIPTION OF THE INVENTION According to the present invention, when 25 to 35% of an absolute boron concentration (atoms / cc) of phosphorus is added to an initial melt, the apparent segregation coefficient of boron is 0.83 to 0.1.
It is characterized in that a desired specific resistance value can be obtained over almost the entire region of a normally produced single crystal, and an effect that a portion where the specific resistance is reversed does not appear near the bottom of the ingot is obtained. That is, in the present invention, the specific resistance value of the silicon single crystal is uniform in the pulling direction, but the specific resistance of the single crystal is, for example, 90% of the length of the single crystal. %, It is desirable that there is no phenomenon such as an increase from a decrease within a required range such as a value within −30% of a target specific resistance value, and only a decreasing tendency. The apparent segregation coefficient of boron is a segregation coefficient obtained by assuming that only boron exists from the specific resistance value and the measurement position. Boron and phosphorus in silicon perform independent segregation. When the absolute amounts of boron and phosphorus are measured by photoluminescence and the like and the respective segregation coefficients are obtained, the values close to 0.75 and 0.35 are obtained for both C boronＣC phosphorus and C boron> C phosphorus. . However, when the segregation coefficient is obtained from the specific resistance value and its measurement position, the vacancy generated by boron and the electron generated by phosphorus cancel each other out, so that the segregation coefficient differs from the above. In this case, it is assumed that only boron is present. Specifically, in the case of C boron≫C phosphorus, the value is close to 0.75 due to the overwhelmingly large number of holes, but C
In the case of boron> C phosphorus, the number of holes and the number of electrons are approximated (particularly in the latter half of the crystal), so that the amount of holes removed by electrons cannot be ignored, and segregation from the specific resistance value and its measurement position. When the coefficient is obtained, it becomes a value larger than 0.75. In the present invention, the initial melt contains 25 to 35% of the absolute boron concentration (atoms / cc) contained therein.
However, if less than 25%, the apparent segregation coefficient of boron is 0.83 or less, the range in which a desired specific resistance value can be obtained is limited, and the effect of adding phosphorus is difficult to obtain.
Above 5%, the apparent segregation coefficient of boron is 0.88
As described above, a desired specific resistance value can be obtained over almost the entire range, but it is not preferable because a portion where the specific resistance reverses appears near the bottom of the ingot or a portion similar thereto appears. Specifically, the segregation coefficient of boron is 0.75
The segregation coefficient of phosphorus is about 0.35, and the smaller the segregation coefficient, the lower the impurity concentration taken into the single crystal. This is because the lower the segregation coefficient, the more the impurity concentration in the melt increases. Means When the boron concentration and the phosphorus concentration are close to each other, the concentration of phosphorus cannot be ignored particularly near the bottom of the ingot. In the normal case where the boron concentration and the phosphorus concentration are not approximated (C boron≫C phosphorus), both boron and phosphorus increase toward the bottom, and apparent segregation due to a large difference between the boron concentration and the phosphorus concentration. The coefficient does not change.
However, when the boron concentration and the phosphorus concentration are approximated, and particularly when C boron> C phosphorus is approximated, the apparent segregation coefficient also changes. At this time, both boron and phosphorus increase toward the bottom, but if the increase in phosphorus exceeds the increase in boron, the apparent segregation coefficient of boron becomes locally negative and the phenomenon of reversal of the specific resistance occurs. Therefore, a specific optimum value exists depending on the type of the combination of impurities. In the present invention, the pulling conditions in the Czochralski method are not particularly limited, but the absolute boron concentration of the initial melt is 2.7 × 10 16 atoms / c.
It is preferably not more than c. EXAMPLES Comparative Example 1 140 kg of silicon was melted and p-type 15-20 Ωcm
In order to grow an 8 inch single crystal of
It was grown under the condition of adding a dopant containing boron equivalent to 5.77 × 10 19 atoms / cc. FIG. 1A shows the concentration of boron and phosphorus in silicon at each pulling ratio portion, and FIG. 1 shows the concentration difference between boron and phosphorus.
FIG. 1B shows the specific resistance value at each pulling rate portion in FIG. 1C. As a result, a desired specific resistance value was obtained only in 70% of the whole. The segregation coefficient of boron with respect to silicon is
0.75. Comparative Example 2 As in Comparative Example 1, when 140 kg of silicon was melted to grow a p-type 8-inch single crystal of 15 to 20 Ωcm, the absolute boron concentration (atoms / cc) contained in the initial melt was 4%.
When 0% phosphorus was added, the desired specific resistance value could be obtained at 100% of the total as shown in FIG. 3 showing the boron and phosphorus concentrations, the boron and phosphorus concentration difference, and the specific resistance value. In the vicinity of the bottom part, a portion where the specific resistance value was reversed appeared. Example 1 As in Comparative Example 1, when 140 kg of silicon was melted to grow an 8-inch single crystal having a p-type of 15 to 20 Ωcm, the absolute boron concentration (atoms / cc) contained in the initial melt was 3%.
Pulling was performed by adding 1% of phosphorus. As a result, FIG. 2 shows boron and phosphorus concentrations,
As shown by the difference in concentration between boron and phosphorus and the specific resistance, a desired specific resistance could be obtained in 90% of the whole. The segregation coefficient of boron with respect to silicon when phosphorus was not added was 0.75, but was 0.85 when 31% phosphorus was added. According to the present invention, a p-type additive containing boron as a main additive
In growing a silicon single crystal, the apparent segregation coefficient can be increased by simple means of adding a specific amount of phosphorus,
The specific resistance value of the silicon single crystal can be uniformly set to a required value in the length direction, and the yield can be improved.
【図面の簡単な説明】
【図１】Ａはリン添加量０％の場合の各引上率部におけ
るシリコン中のボロンおよびリン濃度を示すグラフ、Ｂ
は同各引上率部におけるボロンとリンの濃度差を示すグ
ラフ、Ｃは同各引上率部における比抵抗値を示すグラフ
である。
【図２】Ａはリン添加量３１％の場合の各引上率部にお
けるシリコン中のボロンおよびリン濃度を示すグラフ、
Ｂは同各引上率部におけるボロンとリンの濃度差を示す
グラフ、Ｃは同各引上率部における比抵抗値を示すグラ
フである。
【図３】Ａはリン添加量４０％の場合の各引上率部にお
けるシリコン中のボロンおよびリン濃度を示すグラフ、
Ｂは同各引上率部におけるボロンとリンの濃度差を示す
グラフ、Ｃは同各引上率部における比抵抗値を示すグラ
フである。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a graph showing the concentrations of boron and phosphorus in silicon at each pulling ratio when the amount of phosphorus added is 0%, and FIG.
Is a graph showing the concentration difference between boron and phosphorus in each of the lifting parts, and C is a graph showing the specific resistance value in each of the lifting parts. FIG. 2A is a graph showing the concentrations of boron and phosphorus in silicon in each pulling ratio part when the amount of phosphorus added is 31%,
B is a graph showing the concentration difference between boron and phosphorus in each of the lifting parts, and C is a graph showing the specific resistance value in each of the lifting parts. FIG. 3A is a graph showing the concentrations of boron and phosphorus in silicon in each pulling ratio part when the amount of phosphorus added is 40%,
B is a graph showing the concentration difference between boron and phosphorus in each of the lifting parts, and C is a graph showing the specific resistance value in each of the lifting parts.
Claims (1)
濃度（ａｔｏｍｓ／ｃｃ）の２５〜３５％に相当するリ
ンを初期融液に添加した溶融シリコンより、チョクラル
スキー法で引上げ方向に比抵抗値が均一なｐ型シリコン
単結晶を育成するシリコン単結晶の育成方法。Claims: 1. Czochralski from molten silicon obtained by adding phosphorus corresponding to 25 to 35% of the absolute concentration (atoms / cc) of boron contained as a main additive to an initial melt. A method for growing a silicon single crystal, which grows a p-type silicon single crystal having a uniform resistivity in a pulling direction by a pulling method.
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|---|---|---|---|
| JP2001339189A JP3931956B2 (en) | 2001-11-05 | 2001-11-05 | Method for growing silicon single crystal |
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| US7214267B2 (en) | 2004-05-12 | 2007-05-08 | Sumitomo Mitsubishi Silicon | Silicon single crystal and method for growing silicon single crystal |
| US7820007B2 (en) | 2004-04-01 | 2010-10-26 | Sumco Corporation | Silicon electrode plate for plasma etching with superior durability |
| EP2607526A1 (en) | 2011-12-21 | 2013-06-26 | Siltronic AG | Silicon single crystal substrate and method of manufacturing the same |
| CN103282555A (en) * | 2010-12-28 | 2013-09-04 | 硅电子股份公司 | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
| KR101674819B1 (en) * | 2015-08-12 | 2016-11-09 | 주식회사 엘지실트론 | Method for Growing Single Crystal |
-
2001
- 2001-11-05 JP JP2001339189A patent/JP3931956B2/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7820007B2 (en) | 2004-04-01 | 2010-10-26 | Sumco Corporation | Silicon electrode plate for plasma etching with superior durability |
| US7214267B2 (en) | 2004-05-12 | 2007-05-08 | Sumitomo Mitsubishi Silicon | Silicon single crystal and method for growing silicon single crystal |
| CN103282555A (en) * | 2010-12-28 | 2013-09-04 | 硅电子股份公司 | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
| EP2607526A1 (en) | 2011-12-21 | 2013-06-26 | Siltronic AG | Silicon single crystal substrate and method of manufacturing the same |
| US9303332B2 (en) | 2011-12-21 | 2016-04-05 | Siltronic Ag | Silicon single crystal substrate and method of manufacturing the same |
| KR101674819B1 (en) * | 2015-08-12 | 2016-11-09 | 주식회사 엘지실트론 | Method for Growing Single Crystal |
| WO2017026648A1 (en) * | 2015-08-12 | 2017-02-16 | 주식회사 엘지실트론 | Method for growing single crystal |
| JP2018525308A (en) * | 2015-08-12 | 2018-09-06 | エスケー シルトロン カンパニー リミテッド | Single crystal growth method |
| US10378122B2 (en) | 2015-08-12 | 2019-08-13 | Sk Siltron Co., Ltd. | Method for growing single crystal |
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