JP2003133656A - Mounting structure of semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mounting structure having high mounting reliability even in the case that the difference in thermal expansions between a semiconductor element and a wiring board is large, in the mounting structure where a mounting part between both is filled with a filler. SOLUTION: The mounting structure of the semiconductor element is formed by placing the semiconductor element 13 provided with a connecting electrode 14 on the surface of the wiring board 1 provided with a wiring conductor layer 8, by connecting the layer 8 and the electrode 14 together through hard soldering, and by filling a filler 16 containing thermosetting resin into the connecting part of the layer 8 and the electrode 14. A groove 12 whose inner width is larger than the width of an opening 18 is formed on the surface of the wiring board 1 situated on a fillet part 17 made of the filler 16 which is formed on the periphery of the semiconductor element 13. Adhesive strength of the filler 16 against the wiring board 1 can be enhanced, generation of cracks on a boundary face between the filler 16 of the fillet part 17 and the wiring board 1 can be prevented, and progress of the cracks can be effectively prevented by the groove 12 even in the case of generation of the cracks.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element mounting structure, and in particular, a semiconductor element is surface-mounted on a large wiring board by brazing, and a thermosetting resin is provided between the wiring board and the semiconductor element. The present invention relates to a mounting structure of a semiconductor element which is excellent in heat history characteristics, durability in use, and reliability obtained by injecting and curing a filler containing it.

[0002]

2. Description of the Related Art Conventionally, microprocessors and ASICs have been used.
A wiring board on which a semiconductor element typified by (Application Specific Integrated Circuit) or the like is mounted and which is used for an electronic circuit board or the like is generally tungsten, molybdenum, etc. on the surface and inside of an insulating substrate made of ceramics such as alumina and mullite. A plurality of metallized wiring layers made of the refractory metal powder are disposed.

Recently, in order to connect such a wiring board and a semiconductor element, a connection electrode is provided on the lower surface of the semiconductor element by a conventional wire bonding method, and this and the connection terminal of the wiring board are directly brazed. It is shifting to the flip chip mounting method.

Further, in the connection by the flip chip mounting, in order to improve the connection reliability, a filler called underfill containing a thermosetting resin is injected into the connection portion and hardened to mechanically connect the connection portion. Reinforcement is often done.

On the other hand, the wiring board is made of an organic material containing a resin component or an organic material containing a resin component such as a printed circuit board by a so-called ball grid array (BGA) method via solder balls in order to increase the mounting density of connection terminals. It is mounted on a motherboard that is composed of a composite material with an inorganic material.

However, when a ceramic multilayer wiring board made of an insulating material such as alumina or mullite is surface-mounted on a mother board made of an insulating material containing an organic resin such as a glass-epoxy resin composite material, the wiring board and the mother board are separated from each other. Due to the large difference in coefficient of thermal expansion, thermal stress may cause the connecting terminals to peel off from the insulating substrate or cause cracks in the connecting parts, ensuring a good mounting state of the wiring board on the motherboard for a long period of time. There was a problem that it could not be maintained.

Therefore, in a wiring board in which connection terminals are formed at a high density such as BGA, an insulating board is used.
A so-called build-up multilayer wiring board is used which has a small coefficient of thermal expansion difference from that of a mother board and which has a high thermal expansion characteristic, or a glass epoxy resin substrate formed of an organic material such as polyimide or epoxy resin.

By using such a wiring board, the thermal stress generated in the connection terminal due to the difference in thermal expansion from the mother boat is minimized, and peeling between the connection terminal and the insulating board and cracks in the connection portion are prevented. A good mounting state of the wiring board on the mother board can be stably maintained for a long time without any occurrence.

However, when the ceramic multilayer wiring board and the build-up multilayer wiring board having such high thermal expansion characteristics are used, the coefficient of thermal expansion mounted on these wiring boards is 2 to 3 × 10 ^−6. / ° C Silicon (S
The difference in coefficient of thermal expansion from the semiconductor element made of i) becomes large, and as a result, when the semiconductor element is flip-chip mounted on the surface of the buildup multilayer wiring board, the coefficient of thermal expansion between the semiconductor element and the buildup multilayer wiring board is increased. Due to the thermal stress caused by the operation / stop of the semiconductor element due to the difference,
It has been found that a new problem occurs that the filler between the semiconductor element and the wiring board is peeled off.

Further, it is effective to fill a filler containing a thermosetting resin in the connection portion with the semiconductor element against such thermal stress, but such a filler is filled. However, due to thermal stress, a crack occurs at the interface between the filler and the wiring board in the fillet portion (also referred to as the skirt spreading portion) formed by the filler around the mounting portion of the semiconductor element, and the crack is generated in the semiconductor element. There is a problem that the electrode is connected to the connection terminal of the wiring board by the brazing material and the electrical connection between the electrode and the connection terminal is impaired.

As a method for preventing such cracks, for example, Japanese Unexamined Patent Publication No. 2001-188362 discloses a ceramic multilayer wiring board having high thermal expansion characteristics, which is located at a fillet portion formed by a filler formed around a semiconductor element. There is proposed a mounting structure of a semiconductor element in which a groove is formed on the surface of a wiring board.

[0012]

In the structure in which a groove is provided on the surface of the wiring board as proposed in Japanese Patent Laid-Open No. 2001-188362, the thermal stress generated by the difference in the coefficient of thermal expansion between the semiconductor element and the wiring board is It is effective when only the shear stress generated at the interface between the filler in the fillet portion and the wiring board is used.

However, when the heat generated during the operation of the semiconductor element is repeatedly applied to the wiring board, when the difference in thermal expansion between the semiconductor element and the wiring board is large, thermal stress strain occurs and the wiring board warps. There is a case. In this case, the thermal stress acts on the interface between the filler in the fillet portion and the wiring board in two directions of shear and tension.
In this case, only providing a groove on the surface of the wiring board has a small effect on the tensile stress, and the interface between the filler of the fillet formed by the filler around the mounting portion of the semiconductor element and the wiring board is reduced. A crack will occur, and this crack will progress to the connection part between the electrode of the semiconductor element and the connection terminal of the wiring board by the brazing material, and the electrical connection state between these electrodes and the connection terminal will be damaged. To do.

The present invention provides a mounting structure in which the mounting portion of the semiconductor element and the wiring board as described above is filled with a filler.
An object of the present invention is to provide a mounting structure of a semiconductor element having high mounting reliability even when the difference in thermal expansion between the semiconductor element and the wiring board is large and the board warps.

[0015]

DISCLOSURE OF THE INVENTION The present inventor has formed a semiconductor element around a semiconductor element in a structure in which a semiconductor element is flip-chip mounted on a wiring board and the mounting portion is filled with a filler containing a thermosetting resin. The above problem can be solved by forming a groove with an internal width wider than the width of the opening on the surface of the wiring board located in the fillet part by the filled filler, and a strong and stable electrical connection over a long period of time can be achieved. The inventors have found that the above can be maintained and have completed the present invention.

That is, the semiconductor element mounting structure of the present invention is
On the surface of a wiring board having a wiring conductor layer, a semiconductor element having a connecting electrode is placed, the wiring conductor layer and the connecting electrode are brazed and connected, and a thermosetting resin is provided at the connecting portion. In the mounting structure of a semiconductor element formed by filling a filler containing, on the surface of the wiring board located in the fillet portion by the filler formed around the semiconductor element,
It is characterized in that a groove having an inner width wider than the width of the opening is formed.

In the semiconductor element mounting structure of the present invention, the widest width inside the groove is 1.
It is preferable that the groove depth is 2 to 5 times, the groove depth is 30 to 150 μm, and the thermosetting resin contains an epoxy resin.

According to the present invention, in such a mounting structure, a groove having an inner width larger than the width of the opening is formed on the surface of the wiring substrate located in the fillet portion formed by the filler formed around the semiconductor element. By forming the groove, the groove acts as an anchor against the force of peeling the fillet portion of the filler, and enhances the adhesive strength of the filler to the wiring board even against the tensile stress caused by the difference in thermal expansion. The filler and the wiring of the fillet portion, which can be caused by the thermal stress distortion generated by the difference in the coefficient of thermal expansion between the semiconductor element and the wiring board when the heat generated during the operation of the semiconductor element is repeatedly applied to the wiring board. It is possible to prevent the occurrence of cracks at the interface with the substrate, and even if cracks occur,
This groove can effectively prevent the development of cracks.

Further, according to the present invention, the widest inside of the groove is set to 1.2 to 5 times the width of the opening, so that the groove does not interfere with fine wiring arranged around the semiconductor element. No
And since the filler is sufficiently fixed to the wiring board and acts more effectively as an anchor, when the heat generated during the operation of the semiconductor element is repeatedly applied to the wiring board, the difference in the thermal expansion coefficient between the semiconductor element and the wiring board causes It can more effectively function to prevent the occurrence of cracks at the interface between the filler in the fillet portion and the wiring board, which is caused by the generated thermal stress strain.

Further, according to the present invention, the groove depth is 30 to 15 mm.
By setting the thickness to 0 μm, it is possible to fill the groove with the filler without generating voids, and further, it is possible to secure sufficient strength to fix the filler filled in the groove in the fillet portion. Even in the pressure cooker test, the filler can be prevented from peeling off from the wiring board.

Further, according to the present invention, by using a thermosetting resin containing an epoxy resin as the filler, the filler is not thermally decomposed in a heat cycle test or the like, and the adhesion with the wiring board is further strengthened. It is possible to keep the temperature of the filler in the heat cycle test and the pressure cooker test and prevent the filler from peeling off from the wiring board.

With this, it is possible to provide a semiconductor element mounting structure in which the semiconductor element and the wiring board can be firmly electrically connected to each other for a long period of time, and high reliability can be ensured even for long-term use.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION A semiconductor element mounting substrate of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is a sectional view of an essential part showing an example of an embodiment of a mounting structure of a semiconductor element of the present invention, and FIG. 2 is an enlarged sectional view of a mounting part of the semiconductor element. In FIG. 1, 1 is a wiring board, 2 is an insulating base, and a through conductor 3 is formed on the insulating base 2. Further, a connection land 4 extending from the penetrating conductor 3 is formed on the surface of the insulating base 2 to form a core substrate 5. Further, the through conductor 3 is filled with an insulating material or a conductive material 6, and a plurality of insulating layers 7 and a plurality of wiring conductor layers 8 are formed on the surface of the core substrate 5. As a part, an external connection pad 9 for electrical connection to the outside is formed on one surface, and is electrically connected to the connection land 4 by a plurality of via conductors 10. Similarly, a semiconductor element connecting pad 11 is formed as a part of the wiring conductor layer 8 on the other surface, and is electrically connected to the connection land 4 by a plurality of via conductors 10.

In the wiring board used in the mounting structure of the present invention, each insulating layer 7 is made of, for example, polyimide, epoxy resin,
Electrical insulating material such as composite insulating material formed by using organic insulating material such as fluororesin, polynorbornene or benzocyclobutene, or combining inorganic insulating powder such as ceramic powder with thermosetting resin such as epoxy resin Is formed using.

These insulating layers 7 are manufactured as follows. For example, in the case of an epoxy resin, ceramics made of a sintered aluminum oxide or glass fiber woven cloth is generally impregnated with epoxy resin to form an insulating layer made of glass epoxy resin on the upper surface of the organic layer. An insulating layer 7 made of an organic resin such as an epoxy resin formed by applying a resin precursor by a coating technique such as a spin coating method or a curtain coating method and subjecting it to heat curing, and a copper electroless plating method. It is manufactured by alternately laminating thin film wiring conductor layers 8 formed by adopting a thin film forming technique such as a vapor deposition method and a photolithography technique, and heating and curing at a temperature of about 170 ° C.

Each wiring conductor layer 8 is made of, for example, copper (C
u), silver (Ag), nickel (Ni), chromium (C
r), titanium (Ti), gold (Au) or niobium (N)
It may be formed by a thin film of a metal material such as b) or an alloy thereof.

Specifically, in the case of forming a thin film of a metal material, for example, a metal film can be formed by a sputtering method, a vacuum deposition method or a plating method, and then formed into a predetermined wiring pattern by a photolithography method. .

In this example, a semiconductor element 13 such as a microprocessor or ASIC is mounted on the upper surface of the wiring board 1.
It is electrically connected to the wiring board 1 through the conductor bumps 15 made of solder such as Sn-Pb and the semiconductor element connecting pads 11 for connecting the semiconductor elements 13.

The semiconductor element mounting structure of the present invention uses a wiring board in which a wiring conductor layer is provided on at least the surface of an insulating board. In the example shown in FIG. 1, a BGA type package is used as the wiring board. The mounting structure when using is shown. That is, in FIG. 1, reference numeral 1 is a wiring board constituting a BGA type package, and 13 is a semiconductor element.

The semiconductor element 13 is of a flip-chip type, is made of a semiconductor material such as Si, and has conductor bumps 15 such as solder bumps formed on its lower surface. As shown in the enlarged view of the main part of FIG. 2, in the semiconductor element 13, the conductor bumps 15 are placed and abutted on the land portions 11 on the upper surface of the wiring substrate 1, and thereafter, about 250 to 400. By heating at a temperature of ° C. to melt the conductor bumps 15, the semiconductor element 13
The connection electrode 14 of is connected to the land portion 11 of the wiring board 1,
It is implemented. Then, the mounting portion of the semiconductor element 13 is filled with a filler 16 containing a thermosetting resin for reinforcing the mounting portion.

In the semiconductor element mounting structure of the present invention, the inner width is wider than the opening width on the surface of the wiring board 1 located in the fillet portion 17 of the filler 16 formed around the semiconductor element 13. Groove 12 is formed. In the groove 12 in the example shown in FIG. 2, the inner width is wider than the width of the opening 18, and the dimension is 19 at the widest portion at the bottom portion. The groove 12 is filled with a filler 16 and is integrated with the filler 16 and the fillet portion 17 of the mounting portion of the semiconductor element 13. As a result, the filler 16 in the groove 12 acts as an anchor, so that the adhesive strength of the filler 16 with the wiring board 1 can be increased.

The width of the groove 12 is appropriately selected according to the width of the fillet portion 17, but in particular, the width of the opening 18 is usually set.
Since it is 0.1 to 0.5 mm, the filler 16 in the groove 12 is
In order to exert the effect as an anchor on the inside, the dimension 19 of the widest portion inside the groove 12 is 1.2 to the width of the opening 18.
It is desirable to be 5 times. When the dimension 19 of the widest portion inside the groove 12 is less than 1.2 times the width of the opening 18, the filler 16 in the groove 12 tends not to sufficiently exhibit the function as an anchor for tensile stress. is there. On the other hand, 5
If the number exceeds twice, it may hinder the formation of fine wiring for the signal lines formed around the semiconductor element 13.

Further, in order to exert the above effect by the groove 12, it is desirable that the depth thereof is 30 to 150 μm. If the depth of the groove 12 is less than 30 μm, the effect on the shear stress tends to be undesired. On the other hand, 150
When the thickness exceeds μm, the filler 16 is likely to be peeled off in a reliability test such as a pressure cooker test, and cracks originating from the groove 12 in the wiring board 1 are likely to occur. Problems such as that the absolute strength is likely to decrease may occur.

The formation of such a groove 12 is performed by hardening the insulating layer 7 which is perforated by using a laser or the like when forming the plurality of insulating layers 7 on the surface of the core substrate 5, or after the hardening. This can be performed by processing the surface of the core substrate 5 with a laser or the like.

The cross-sectional shape of the groove 12 is, as shown in FIG. 3 in an enlarged cross-sectional view similar to FIG. 2, by stacking two or more insulating layers having grooves of different widths so that they overlap. , A narrow groove is formed on the surface layer and a wide groove is formed as an inner layer, and the inner width is wider than the width of the opening 18, and the lower half is the dimension 19 of the widest part. The groove 12 may have a groove. Further, as shown in an enlarged cross-sectional view similar to FIG. 4, the groove 12 has an insulating layer in which grooves having different opening width dimensions are formed on the front and back sides so that the wide surfaces of the openings face each other. It is configured by stacking the layers into a groove 12 having an inner width wider than the width of the opening 18 and a central portion having a dimension 19 of the widest portion, or an enlarged sectional view similar to FIG. As shown in the drawing, insulating layers in which grooves having different widths of openings are formed on the front and back sides are laminated so that the wide and narrow surfaces of the openings face each other, and It is configured to have a groove with a wide inner width, and the inner width is wider than the width of the opening 18, and the central portion and the bottom portion have the widest dimension 19
The groove 12 may be a groove. In addition, the groove 12
As shown in the same enlarged cross-sectional view in FIG. 6, the insulating layer having grooves with different width dimensions of the openings formed on the front and back faces the wide and narrow surfaces of the openings. As shown in FIG. 7, the opening 12 has a width narrowing once and the width becomes wider at the central portion and the central portion has a groove 19 having a dimension 19 of the widest portion. As shown in a similar enlarged cross-sectional view, insulating layers in which grooves having different opening widths are formed on the front and back are laminated so that the narrow surfaces of the openings face each other. In, the groove 12 may be a groove 12 whose width is once narrowed from the opening 18 and gradually widens from the central portion, and whose bottom portion has a dimension 19 of the widest portion.

The thermosetting resin contained in the filler 16 in the semiconductor element mounting structure of the present invention includes, for example, phenol resin, urea resin, melamine resin, epoxy resin, unsaturated polyester resin, diallyl phthalate resin. , Polyimide resin, silicone resin, polyurethane resin, etc. can be used. Among these, epoxy resins having excellent heat resistance such as bisphenol epoxy resin, novolac epoxy resin, brominated epoxy resin, and alicyclic epoxy resin are particularly desirable.

In addition to the thermosetting resin, it is desirable that the filler 16 contains an inorganic filler. This inorganic filler is added to the thermosetting resin in order to reduce the coefficient of thermal expansion of the filler 16, and when the inorganic filler is mainly composed of spherical particles, the semiconductor element 13 and the wiring substrate 1 As a result of being able to enhance the filling property in the narrow space of the mounting portion, it is possible to prevent the occurrence of cracks due to defective filling in the filler 16.

It is speculated that the spherical particles have good filling properties because there are substantially no corners on the surface of the particles and the friction between the particles is small. In particular, the spherical particles have an average aspect ratio calculated by major axis / minor axis of 1.2 or less, particularly 1.1 or less, and an average particle diameter depending on the major axis of 0.3 to 20 μm.
It is particularly preferably 1 to 10 μm from the viewpoint of filling property. If this average particle size is smaller than 0.3 μm, the filler 16
Has a low viscosity, the filling property is deteriorated, and voids are easily generated. On the other hand, if the average particle size exceeds 20 μm, it becomes difficult to fill the filler between the semiconductor element 13 and the wiring board 1, and voids and cracks due to unevenness of the filler 16 are likely to occur.

As the inorganic filler used for the filler 16, crushed or spherical inorganic substances such as quartz glass, alumina, mica, zirconium silicate and lithium silicate are desirable.

The wiring board 1 has a Young's modulus of 10 to 30 G.
Insulating substrate 2 made of a glass epoxy resin substrate that is Pa
In addition, a core substrate 5 having a penetrating conductor 3 penetrating the insulating substrate 2 and a connection land 4 extending from the penetrating conductor 3 on the surface of the insulating substrate 2, and a plurality of core substrates 5 stacked on the surface of the core substrate 5. When the insulating layer 7 and the wiring portion composed of a plurality of wiring conductor layers 8 are formed and the Young's modulus of the insulating layer 7 at −100 to + 300 ° C. is 10 to 100 GPa, heat generated during the operation of the semiconductor element 13 is generated. When repeatedly applied to the wiring board 1, the wiring board 1 is largely warped by the thermal stress generated due to the large difference in thermal expansion coefficient between the semiconductor element 13 and the wiring board 1, and the filler 16 of the fillet portion 17 and the wiring board 1 are warped. Since a large tensile force acts on the interface with the insulating layer 7 which is the surface of the groove 1, the groove 12 having an inner width wider than the width of the opening 18 acts particularly effectively as an anchor.

Then, the wiring board 1 on which the semiconductor element 13 is mounted by the mounting structure of the semiconductor element of the present invention as described above.
Is used as an electronic component storage package such as a semiconductor element storage package, an electronic component mounting substrate, a so-called multi-chip module or a multi-chip package on which a large number of semiconductor elements are mounted.

The present invention is not limited to the above-mentioned embodiments, and various modifications may be made without departing from the scope of the present invention. For example, although the mounting structure in which the BGA type package is used as the wiring substrate 1 is shown in the above example, the LGA type package or the PGA type package may be used as the wiring substrate 1.

[0043]

According to the present invention, a semiconductor element having a connection electrode is placed on the surface of a wiring board having a wiring conductor layer, and the wiring conductor layer and the connection electrode are connected by brazing. And a mounting structure of a semiconductor element in which a filler containing a thermosetting resin is filled in the connection portion thereof, the surface of the wiring substrate located in a fillet portion formed by the filler formed around the semiconductor element Since a groove with an internal width wider than the width of the opening was formed in this, the groove acts as an anchor against the force to peel off the fillet portion of the filler, and the tensile stress caused by the difference in thermal expansion Also, the adhesive strength of the filler to the wiring board can be increased, and when the heat generated during the operation of the semiconductor element is repeatedly applied to the wiring board, the difference in the coefficient of thermal expansion between the semiconductor element and the wiring board is large. Occur As a result of thermal stress strain, it is possible to prevent the occurrence of cracks at the interface between the filler and the wiring board of the fillet portion formed by the filler around the mounting portion of the semiconductor element. Also, this groove makes it possible to effectively prevent the development of cracks, and provides a semiconductor element mounting structure suitable for a wiring board used for an electronic circuit board or the like on which electronic components such as a semiconductor element are mounted. be able to.

Further, according to the present invention, the widest inside of the groove is set to 1.2 to 5 times the width of the opening, so that the groove interferes with fine wiring arranged around the semiconductor element. And the filler is sufficiently fixed to the wiring board,
Since it acts more effectively as an anchor, it can increase the adhesive strength of the filler to the wiring board, and when the heat generated during the operation of the semiconductor element is repeatedly applied to the wiring board, the thermal expansion of the semiconductor element and the wiring board. Further effective in preventing the occurrence of cracks at the interface between the filler of the fillet formed by the filler around the mounting area of the semiconductor element and the wiring board, which is caused by the thermal stress strain caused by the large coefficient difference Can be made to function.

Further, according to the present invention, the depth of the groove is 30
By setting the thickness to 150 μm, the filler can be filled in the groove without generating voids, and further, sufficient strength for fixing the filler filled in the groove in the fillet portion can be secured, so that the thermal cycle Even in the test and the pressure cooker test, the filler can be prevented from peeling off from the wiring board.

Further, according to the present invention, by using a thermosetting resin containing an epoxy resin as the filler, the filler is not thermally decomposed in a heat cycle test or the like, and the adhesion with the wiring board is further strengthened. It is possible to keep the temperature of the filler in the heat cycle test and the pressure cooker test and prevent the filler from peeling off from the wiring board.

As described above, according to the present invention, in the mounting structure in which the mounting portion between the semiconductor element and the wiring board is filled with the filler, the difference in thermal expansion between the semiconductor element and the wiring board is large, and the board warps. Even in the case, it was possible to provide a mounting structure of a semiconductor element having high mounting reliability.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor element mounting structure of the present invention.

FIG. 2 is an enlarged cross-sectional view of a mounting portion of a semiconductor element in the example shown in FIG.

FIG. 3 is an enlarged cross-sectional view of a semiconductor element mounting portion in another example of the semiconductor element mounting structure of the present invention.

FIG. 4 is an enlarged cross-sectional view of a semiconductor element mounting portion in another example of the semiconductor element mounting structure of the present invention.

FIG. 5 is an enlarged cross-sectional view of a semiconductor element mounting portion in another example of the semiconductor element mounting structure of the present invention.

FIG. 6 is an enlarged cross-sectional view of a semiconductor element mounting portion in another example of the semiconductor element mounting structure of the present invention.

FIG. 7 is an enlarged cross-sectional view of a semiconductor element mounting portion in another example of the semiconductor element mounting structure of the present invention.

[Explanation of symbols]

1: Wiring board 2: Insulating substrate 3: Through conductor 4: Connection land 5: Core substrate 7: Insulation layer 8: Wiring conductor layer 9: Pad for external connection 10: Via conductor 11: Pad for semiconductor element connection 12: groove 13: Semiconductor element 14: Connection electrode 15: Conductor bump 16: Filler 17: Fillet part 18: Groove opening 19: Dimensions of the widest part inside the groove 20: Groove depth

Claims (4)

[Claims] 1. A surface of a wiring board having a wiring conductor layer,
A semiconductor element comprising a semiconductor element provided with a connecting electrode, the wiring conductor layer and the connecting electrode being brazed and connected, and the connecting portion being filled with a filler containing a thermosetting resin. In the mounting structure, a groove having an inner width wider than the width of the opening is formed on the surface of the wiring board located in the fillet portion formed by the filler formed around the semiconductor element. Semiconductor element mounting structure. 2. The mounting structure for a semiconductor device according to claim 1, wherein the widest width inside the groove is 1.2 to 5 times the width of the opening. 3. The mounting structure for a semiconductor device according to claim 1, wherein the depth of the groove is 30 to 150 μm. 4. The mounting structure for a semiconductor element according to claim 1, wherein the thermosetting resin contains an epoxy resin.