JP2003133539A5 - - Google Patents

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Publication number
JP2003133539A5
JP2003133539A5 JP2002187056A JP2002187056A JP2003133539A5 JP 2003133539 A5 JP2003133539 A5 JP 2003133539A5 JP 2002187056 A JP2002187056 A JP 2002187056A JP 2002187056 A JP2002187056 A JP 2002187056A JP 2003133539 A5 JP2003133539 A5 JP 2003133539A5
Authority
JP
Japan
Prior art keywords
integrated device
integrated
laser
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002187056A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003133539A (ja
Filing date
Publication date
Priority claimed from US09/894,717 external-priority patent/US7012943B2/en
Application filed filed Critical
Publication of JP2003133539A publication Critical patent/JP2003133539A/ja
Publication of JP2003133539A5 publication Critical patent/JP2003133539A5/ja
Pending legal-status Critical Current

Links

JP2002187056A 2001-06-28 2002-06-27 アモルファスシリコン送信及び受信構造とＧａＡｓまたはＩｎＰ加工済み装置との集積化 Pending JP2003133539A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/894,717 US7012943B2 (en) 2001-06-28 2001-06-28 Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices
US09/894717 2001-06-28

Publications (2)

Publication Number Publication Date
JP2003133539A JP2003133539A (ja) 2003-05-09
JP2003133539A5 true JP2003133539A5 (enExample) 2005-09-29

Family

ID=25403445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002187056A Pending JP2003133539A (ja) 2001-06-28 2002-06-27 アモルファスシリコン送信及び受信構造とＧａＡｓまたはＩｎＰ加工済み装置との集積化

Country Status (4)

Country Link
US (1) US7012943B2 (enExample)
EP (1) EP1284531B1 (enExample)
JP (1) JP2003133539A (enExample)
DE (1) DE60210168T2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7831151B2 (en) * 2001-06-29 2010-11-09 John Trezza Redundant optical device array
US7289547B2 (en) * 2003-10-29 2007-10-30 Cubic Wafer, Inc. Laser and detector device
ATE388467T1 (de) * 2003-12-24 2008-03-15 Koninkl Philips Electronics Nv Verbessertes optisches auslesen
JP3729270B2 (ja) 2004-01-08 2005-12-21 セイコーエプソン株式会社 光素子およびその製造方法
US7526009B2 (en) * 2005-05-07 2009-04-28 Samsung Electronics Co., Ltd. End-pumped vertical external cavity surface emitting laser
JP2010177649A (ja) * 2009-02-02 2010-08-12 Sony Corp 半導体発光装置
EP3588700A1 (en) * 2018-06-26 2020-01-01 Koninklijke Philips N.V. Vcsel device for an smi sensor for recording three-dimensional pictures

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513021Y2 (enExample) * 1986-02-20 1993-04-06
JPH01109764A (ja) * 1987-10-22 1989-04-26 Nec Corp 光電子集積回路
US5038356A (en) 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
US5355096A (en) 1993-07-06 1994-10-11 Trw Inc. Compace HBT wide band microwave variable gain active feedback amplifier
US5398004A (en) 1994-02-09 1995-03-14 Trw Inc. HBT direct-coupled low noise wideband microwave amplifier
US5389896A (en) 1994-02-24 1995-02-14 Trw Inc. HBT monolithic variable gain amplifier with bias compensation and buffering
FR2725098B1 (fr) 1994-09-27 1996-11-22 Alcatel Telspace Dispositif de synchronisation de branches d'un decodeur de viterbi compris dans un recepteur de donnees numeriques codees en treillis multidimensionnel
US5550520A (en) 1995-04-11 1996-08-27 Trw Inc. Monolithic HBT active tuneable band-pass filter
US5710523A (en) 1996-01-16 1998-01-20 Trw Inc. Low noise-low distortion hemt low noise amplifier (LNA) with monolithic tunable HBT active feedback
US5838031A (en) 1996-03-05 1998-11-17 Trw Inc. Low noise-high linearity HEMT-HBT composite
US5719893A (en) * 1996-07-17 1998-02-17 Motorola, Inc. Passivated vertical cavity surface emitting laser
US5757837A (en) * 1996-10-16 1998-05-26 The Regents Of The University Of California Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
US5877519A (en) * 1997-03-26 1999-03-02 Picolight Incoporated Extended wavelength opto-electronic devices
US6023485A (en) * 1998-02-17 2000-02-08 Motorola, Inc. Vertical cavity surface emitting laser array with integrated photodetector
DE19807783A1 (de) * 1998-02-18 1999-09-02 Siemens Ag Bauelement mit einem Lichtsender und einem Lichtempfänger
JPH11330609A (ja) 1998-03-11 1999-11-30 Seiko Epson Corp モニタ付き面発光レーザおよびその製造方法
US6097748A (en) * 1998-05-18 2000-08-01 Motorola, Inc. Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication
US6483862B1 (en) * 1998-12-11 2002-11-19 Agilent Technologies, Inc. System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
US6670599B2 (en) * 2000-03-27 2003-12-30 Aegis Semiconductor, Inc. Semitransparent optical detector on a flexible substrate and method of making
JP2002100829A (ja) * 2000-09-26 2002-04-05 Canon Inc 半導体発光受光装置、およびその作製方法

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