DE60210168T2 - Integration Amorfes Silizium Sende- und Empfang Strukturen mit GaAs oder InP hergestellte Vorrichtungen - Google Patents
Integration Amorfes Silizium Sende- und Empfang Strukturen mit GaAs oder InP hergestellte Vorrichtungen Download PDFInfo
- Publication number
- DE60210168T2 DE60210168T2 DE60210168T DE60210168T DE60210168T2 DE 60210168 T2 DE60210168 T2 DE 60210168T2 DE 60210168 T DE60210168 T DE 60210168T DE 60210168 T DE60210168 T DE 60210168T DE 60210168 T2 DE60210168 T2 DE 60210168T2
- Authority
- DE
- Germany
- Prior art keywords
- light
- semiconductor
- layer
- photodetector
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 title description 11
- 230000010354 integration Effects 0.000 title description 4
- 230000005540 biological transmission Effects 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000002161 passivation Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 238000012544 monitoring process Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 42
- 238000000034 method Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000012806 monitoring device Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000010261 cell growth Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Formation Of Insulating Films (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/894,717 US7012943B2 (en) | 2001-06-28 | 2001-06-28 | Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices |
| US894717 | 2001-06-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60210168D1 DE60210168D1 (de) | 2006-05-18 |
| DE60210168T2 true DE60210168T2 (de) | 2006-08-24 |
Family
ID=25403445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60210168T Expired - Lifetime DE60210168T2 (de) | 2001-06-28 | 2002-06-24 | Integration Amorfes Silizium Sende- und Empfang Strukturen mit GaAs oder InP hergestellte Vorrichtungen |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7012943B2 (enExample) |
| EP (1) | EP1284531B1 (enExample) |
| JP (1) | JP2003133539A (enExample) |
| DE (1) | DE60210168T2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7831151B2 (en) * | 2001-06-29 | 2010-11-09 | John Trezza | Redundant optical device array |
| US7289547B2 (en) * | 2003-10-29 | 2007-10-30 | Cubic Wafer, Inc. | Laser and detector device |
| ATE388467T1 (de) * | 2003-12-24 | 2008-03-15 | Koninkl Philips Electronics Nv | Verbessertes optisches auslesen |
| JP3729270B2 (ja) | 2004-01-08 | 2005-12-21 | セイコーエプソン株式会社 | 光素子およびその製造方法 |
| US7526009B2 (en) * | 2005-05-07 | 2009-04-28 | Samsung Electronics Co., Ltd. | End-pumped vertical external cavity surface emitting laser |
| JP2010177649A (ja) * | 2009-02-02 | 2010-08-12 | Sony Corp | 半導体発光装置 |
| EP3588700A1 (en) * | 2018-06-26 | 2020-01-01 | Koninklijke Philips N.V. | Vcsel device for an smi sensor for recording three-dimensional pictures |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513021Y2 (enExample) * | 1986-02-20 | 1993-04-06 | ||
| JPH01109764A (ja) * | 1987-10-22 | 1989-04-26 | Nec Corp | 光電子集積回路 |
| US5038356A (en) | 1989-12-04 | 1991-08-06 | Trw Inc. | Vertical-cavity surface-emitting diode laser |
| US5355096A (en) | 1993-07-06 | 1994-10-11 | Trw Inc. | Compace HBT wide band microwave variable gain active feedback amplifier |
| US5398004A (en) | 1994-02-09 | 1995-03-14 | Trw Inc. | HBT direct-coupled low noise wideband microwave amplifier |
| US5389896A (en) | 1994-02-24 | 1995-02-14 | Trw Inc. | HBT monolithic variable gain amplifier with bias compensation and buffering |
| FR2725098B1 (fr) | 1994-09-27 | 1996-11-22 | Alcatel Telspace | Dispositif de synchronisation de branches d'un decodeur de viterbi compris dans un recepteur de donnees numeriques codees en treillis multidimensionnel |
| US5550520A (en) | 1995-04-11 | 1996-08-27 | Trw Inc. | Monolithic HBT active tuneable band-pass filter |
| US5710523A (en) | 1996-01-16 | 1998-01-20 | Trw Inc. | Low noise-low distortion hemt low noise amplifier (LNA) with monolithic tunable HBT active feedback |
| US5838031A (en) | 1996-03-05 | 1998-11-17 | Trw Inc. | Low noise-high linearity HEMT-HBT composite |
| US5719893A (en) * | 1996-07-17 | 1998-02-17 | Motorola, Inc. | Passivated vertical cavity surface emitting laser |
| US5757837A (en) * | 1996-10-16 | 1998-05-26 | The Regents Of The University Of California | Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same |
| US5877519A (en) * | 1997-03-26 | 1999-03-02 | Picolight Incoporated | Extended wavelength opto-electronic devices |
| US6023485A (en) * | 1998-02-17 | 2000-02-08 | Motorola, Inc. | Vertical cavity surface emitting laser array with integrated photodetector |
| DE19807783A1 (de) * | 1998-02-18 | 1999-09-02 | Siemens Ag | Bauelement mit einem Lichtsender und einem Lichtempfänger |
| JPH11330609A (ja) | 1998-03-11 | 1999-11-30 | Seiko Epson Corp | モニタ付き面発光レーザおよびその製造方法 |
| US6097748A (en) * | 1998-05-18 | 2000-08-01 | Motorola, Inc. | Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication |
| US6483862B1 (en) * | 1998-12-11 | 2002-11-19 | Agilent Technologies, Inc. | System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer |
| US6670599B2 (en) * | 2000-03-27 | 2003-12-30 | Aegis Semiconductor, Inc. | Semitransparent optical detector on a flexible substrate and method of making |
| JP2002100829A (ja) * | 2000-09-26 | 2002-04-05 | Canon Inc | 半導体発光受光装置、およびその作製方法 |
-
2001
- 2001-06-28 US US09/894,717 patent/US7012943B2/en not_active Expired - Lifetime
-
2002
- 2002-06-24 EP EP02014126A patent/EP1284531B1/en not_active Expired - Lifetime
- 2002-06-24 DE DE60210168T patent/DE60210168T2/de not_active Expired - Lifetime
- 2002-06-27 JP JP2002187056A patent/JP2003133539A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20030002555A1 (en) | 2003-01-02 |
| US7012943B2 (en) | 2006-03-14 |
| DE60210168D1 (de) | 2006-05-18 |
| JP2003133539A (ja) | 2003-05-09 |
| EP1284531A2 (en) | 2003-02-19 |
| EP1284531A3 (en) | 2003-12-03 |
| EP1284531B1 (en) | 2006-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| R082 | Change of representative |
Ref document number: 1284531 Country of ref document: EP Representative=s name: WUESTHOFF & WUESTHOFF PATENT- UND RECHTSANWAEL, DE |
|
| R081 | Change of applicant/patentee |
Ref document number: 1284531 Country of ref document: EP Owner name: NORTHROP GRUMMAN SYSTEMS CORPORATION, US Free format text: FORMER OWNER: NORTHROP GRUMMAN CORP., LOS ANGELES, US Effective date: 20120814 |
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| R082 | Change of representative |
Ref document number: 1284531 Country of ref document: EP Representative=s name: WUESTHOFF & WUESTHOFF PATENT- UND RECHTSANWAEL, DE Effective date: 20120814 |