JP2003124514A - Semiconductor light emitting element and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a structure in which the flow of a creep (surface) leakage current or a bulk uppermost surface current is suppressed. SOLUTION: The semiconductor light emitting element comprises a first compound semiconductor layer 12A, a second compound semiconductor layer 14, a contact layer 12B extended from the first layer 12A, a first electrode 20 formed on the layer 12B, and a second electrode 21 formed on the second layer 14 in such a manner that a recess 31 is provided on the surface region between the first layer 12A and the second layer 12B.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, gallium nitride-based compound semiconductors such as GaN, AlGaN mixed crystal, and AlInGaN mixed crystal have been regarded as promising materials for semiconductor devices capable of emitting light in the visible region to the ultraviolet region. Particularly, a light emitting diode (LED: Li) using a gallium nitride-based compound semiconductor
ght Emitting Diode) has been in the spotlight since its commercialization. Further, realization of a semiconductor laser (LD: Laser Diode) using a gallium nitride-based compound semiconductor has also been reported, and application such as a light source of an optical disk device is expected.

FIG. 20 is a schematic partial sectional view of an LED using a conventional gallium nitride-based compound semiconductor. This semiconductor laser is, for example, a Ga laser on a sapphire substrate 10.
A buffer layer 11 made of N, a first compound semiconductor layer (n-type cladding layer) 12 made of an n-type AlGaN mixed crystal layer, G
a _X In _1-X N (provided that X ≧ 0), the active layer 13, p
Second compound semiconductor layer (p-type AlGaN mixed crystal layer)
(Type clad layer) 14 is sequentially laminated. Then, the second electrode 21 is formed on the exposed second compound semiconductor layer 14, and the exposed first compound semiconductor layer 12 is formed.
The first electrode 20 is formed on the top.

[0004]

In the LED having such a structure, when a voltage is applied between the first electrode 20 and the second electrode 21, the first electrode 20 and the second electrode 21 are applied. As a result of a creeping (surface) leak current or a bulk outermost surface current flowing between and, there is a problem in that the emission efficiency of the LED is reduced and in-plane emission variation occurs. In FIG. 20, the flow of the creeping (surface) leakage current or the bulk outermost surface current is shown by a dotted line. Furthermore, depending on the case, there is a problem that the edge portion of the active layer 13 is damaged as a result of such creeping (surface) leak current or bulk outermost surface current flowing. Such a problem similarly occurs in a semiconductor laser, and also in an LED or a semiconductor laser composed of a compound semiconductor other than a gallium nitride-based compound semiconductor. Also,
Such a phenomenon remarkably occurs as the resistance value of the material forming the first compound semiconductor layer (n-type cladding layer) is higher.

Therefore, an object of the present invention is to provide a semiconductor light emitting device having a structure capable of suppressing the flow of a creeping (surface) leak current or a bulk outermost surface current, and a manufacturing method thereof.

[0006]

A semiconductor light emitting device of the present invention for achieving the above object comprises: (A) a first compound semiconductor layer having a first conductivity type formed on a support;
(B) a second compound semiconductor layer having a second conductivity type formed on the first compound semiconductor layer, and (C) a second compound semiconductor layer formed on the support and extending from the first compound semiconductor layer. A semiconductor light emitting device comprising a contact layer having one conductivity type, (D) a first electrode formed on a contact layer, and (E) a second electrode formed on a second compound semiconductor layer. It is characterized in that a recess is provided in the surface region between the first compound semiconductor layer and the contact layer.

A first aspect of the present invention for achieving the above object
In the method for manufacturing a semiconductor light emitting device according to the aspect, (a) has a first compound semiconductor layer having a first conductivity type on a substrate, and a first conductivity type extending from the first compound semiconductor layer. A step of forming a contact layer, (b) a step of forming a second compound semiconductor layer on the first compound semiconductor layer, and (c) a surface region between the first compound semiconductor layer and the contact layer. The method is characterized by including a step of forming a recess and (d) forming a first electrode on the contact layer and forming a second electrode on the second compound semiconductor layer.

Second aspect of the present invention for achieving the above object
In the method for manufacturing a semiconductor light emitting device according to the aspect, (a) has a first compound semiconductor layer having a first conductivity type on a substrate, and a first conductivity type extending from the first compound semiconductor layer. Forming a contact layer; (b) forming a second compound semiconductor layer on the first compound semiconductor layer; (c) forming a first electrode on the contact layer;
Forming a second electrode on the compound semiconductor layer of
(D) a step of forming a recess in the surface region between the first compound semiconductor layer and the contact layer.

A third aspect of the present invention for achieving the above object.
In the method for manufacturing a semiconductor light emitting device according to the aspect, (a) a first compound semiconductor layer lower layer having a first conductivity type on a substrate,
And after forming a contact layer lower layer having a first conductivity type extending from the first compound semiconductor layer lower layer, an insulating layer is formed on a region between the first compound semiconductor layer lower layer and the contact layer lower layer. And then a lower layer of the first compound semiconductor layer,
On each of the contact layer lower layer and the insulating layer, further,
Forming a first compound semiconductor layer upper layer having a first conductivity type, a contact layer upper layer having a first conductivity type, and an insulating layer coating layer having a first conductivity type; and (b) a second compound semiconductor on the entire surface. After forming the layer, at least a step of removing the second compound semiconductor layer on the contact layer and a portion of the insulating layer coating layer adjacent to the contact layer to expose the contact layer, and (c) on the contact layer And forming a first electrode and forming a second electrode on the second compound semiconductor layer.

In the method for manufacturing the semiconductor light emitting device of the present invention or the semiconductor light emitting device according to the first and second aspects of the present invention, the width of the recess is 0.5 μm or more, preferably 1 μm.
It is desirable that the thickness is at least μm. Further, it is desirable that the depth of the recess is 0.1 μm or more, preferably 0.5 μm or more. Alternatively, the depth t _{1 of the} recess is 0.1 μm ≦ t ₁ ≦ 0.9t ₀ , preferably 0.1 μm, where t ₀ is the thickness of the first compound semiconductor layer and the contact layer.
It is desirable to satisfy m ≦ t ₁ ≦ 0.5t ₀ .

In the semiconductor light emitting device of the present invention, it is preferable that an insulating material is embedded in the recess. Further, in the method for manufacturing a semiconductor light emitting device according to the first aspect of the present invention, the step (c) and the step (d) are performed.
It is preferable that the method further includes the step of filling the concave portion with an insulating material, or the step of filling the concave portion with an insulating material after the step (d). The method for manufacturing a semiconductor light emitting device according to the second aspect of the present invention preferably further comprises a step of filling the recess with an insulating material after the step (d). As a result, the creeping (surface) leak current or the bulk outermost surface current can be more reliably suppressed from flowing.
In these cases, the volume resistivity of the insulating material R _1, when the volume resistivity of the first compound semiconductor layer and the contact layer was changed to R _0, it is desirable to satisfy the 10R ₀ ≦ R _1. As the material forming the insulating material, specifically, SiO ₂ , S
At least one material selected from the group consisting of iN, SiON, Al ₂ O ₃ and polyimide can be mentioned, but not limited thereto. in this way,
When the recess is filled with an insulating material, the width of the recess is 0.5 μm
As described above, it is desirable that the thickness is 1 μm or more. The depth of the recess is 0.1 μm or more, preferably 0.5 μm.
It is preferably m or more. Alternatively, the depth t ₁ of the concave portion, when the thickness of the first compound semiconductor layer and the contact layer was changed to _{t 0, 0.1μm ≦ t 1 ≦} 0.9t 0, preferably 0.1 [mu] m ≦ t ₁ It is desirable to satisfy ≦ 0.5t ₀ . When the recess is filled with the insulating material, the height of the top surface of the insulating material filling the recess from the bottom surface of the recess may be larger than the depth of the recess. That is, the top surface of the insulating material that fills the recess may be in a state of protruding from the recess.

In the semiconductor light emitting device of the present invention, at least the top surface and the side surface of the second compound semiconductor layer are covered,
Further, it may be configured to further include an insulating material layer filling the recess. Further, in the method for manufacturing a semiconductor light emitting device according to the first aspect or the second aspect of the present invention, after the step (d), at least the top surface and the side surface of the second compound semiconductor layer are covered. Further, the insulating material layer filling the recess may be formed. As a result, the creeping (surface) leak current or the bulk outermost surface current can be more reliably suppressed from flowing. In these cases, when the volume resistivity of the insulating material forming the insulating material layer is R ₁ and the volume resistivity of the first compound semiconductor layer and the contact layer is R ₀ , 10R ₀ ≦ R ₁ may be satisfied. desirable. As the insulating material forming the insulating material layer, specifically, SiO ₂ , SiN, SiON, Al ₂
At least one material selected from the group consisting of O ₃ and polyimide may be mentioned, but is not limited thereto. Thus, when the recess is filled with the insulating material layer, the width of the recess is 0.5 μm or more, preferably 1 μm or more.
It is desirable that the thickness is at least μm. Further, it is desirable that the depth of the recess is 0.1 μm or more, preferably 0.5 μm or more. Alternatively, the depth t _{1 of the} recess is 0.1 μm ≦ t ₁ ≦ 0.9t ₀ , preferably 0.1 μm, where t ₀ is the thickness of the first compound semiconductor layer and the contact layer.
It is desirable to satisfy m ≦ t ₁ ≦ 0.5t ₀ .

The volume resistivity R ₁ of the insulating layer in the method for manufacturing a semiconductor light emitting device according to the third aspect of the present invention is 10R when the volume resistivity of the first compound semiconductor layer and the contact layer is R _0. It is desirable to satisfy ₀ ≦ R ₁ . Specifically, the insulating layer is preferably made of at least one material selected from the group consisting of SiO ₂ , SiN, SiON and Al ₂ O ₃ .

In the method for manufacturing the semiconductor light emitting device of the present invention or the semiconductor light emitting device according to the first to third aspects of the present invention (hereinafter, these may be collectively referred to as the present invention) Can have a structure in which the second compound semiconductor layer protrudes from the first compound semiconductor layer. That is, the second compound semiconductor layer can be formed in an island shape on the first compound semiconductor layer. In this case, the concave portion surrounds the second compound semiconductor layer,
The structure may be formed between the first compound semiconductor layer and the contact layer. Alternatively, the recess may be formed between the first compound semiconductor layer and the contact layer so as to surround the contact layer. Alternatively, a stripe-shaped recess formed in a region between the first compound semiconductor layer and the contact layer may be used. In short, when the first compound semiconductor layer and the contact layer are connected to each other by an arbitrary linear path, the recess may be present in this path. Alternatively, when the projection image of the portion of the second compound semiconductor layer close to the contact layer and the projection image of the contact layer are connected by an arbitrary linear path, a concave portion is always present in this path. Good.

The first compound semiconductor layer and the second compound semiconductor layer may be formed in a planar shape, or may be formed in a cone shape or a truncated cone shape.

As the compound semiconductor layer in the present invention, a nitride compound semiconductor layer can be exemplified. here,
As the nitride compound semiconductor layer, specifically, for example, G
aN, AlGaN mixed crystal or AlInGaN mixed crystal, B
AlInGaN mixed crystal, InGaN mixed crystal, InN, AlN
Can be mentioned. In addition, for ternary mixed crystals and binary mixed crystals,
It may also contain traces of impurities. For example, In
GaN may contain a trace amount of Al. When the first conductivity type is n-type and the second conductivity type is p-type, the n-type impurities can be Si, Ge, Se, Sn, C, and Ti, and the p-type impurities can be Mg, Zn, or Cd. , Be,
Ca, Ba, and O can be mentioned.

Alternatively, as the compound semiconductor layer in the present invention, a GaAs-based compound semiconductor layer, AlGaInP
Based compound semiconductor layers, GaAlAs based compound semiconductor layers, etc.
Broadly, there can be mentioned III-V group compound semiconductor layers, or alternatively, BeMgZnCdO based compound semiconductor layers, BeMgZnCdS based compound semiconductor layers, and further I.
An I-VI group compound semiconductor layer can also be mentioned.

The first compound semiconductor layer and the second compound semiconductor layer are formed, for example, by metal organic chemical vapor deposition (MOCV).
D method), molecular beam epitaxy method (MBE method), and hydride vapor phase epitaxy method (HVPE method).

The method of filling the recess with the insulating material or the method of forming the insulating layer or the insulating material layer may be a known method, for example, a sputtering method, a chemical vapor deposition method (CVD method), a spin method. A coating method and a screen printing method can be exemplified.

The first electrode and the second electrode may have a known structure. Specifically, as the first electrode, from the bottom,
Ti layer / Au layer two-layer structure, Al layer / Au layer two-layer structure, Au-Sn layer / Au layer two-layer structure, Ti layer / Pt layer / Au layer three-layer structure, Al layer / Ti layer / Au layer 3 layer structure, Al layer / Ni layer / Au layer 3 layer structure, Au-Ge layer / Ni layer / Au layer 3 layer structure, Ti layer / Al layer / Pt layer / Au layer 4 layer A four-layer structure of Ni layer / Al layer / Ti layer / Au layer can be exemplified. Further, as the second electrode, from the bottom, a two-layer structure of Pt layer / Au layer, Au-B
e layer / Au layer two-layer structure, Au-Zn layer / Au layer two-layer structure, Ni layer / Pt layer / Au layer three-layer structure, Pt layer / N
Examples include a three-layer structure of i / Au layer, a three-layer structure of Au-Zn layer / Ti layer / Au layer, and a four-layer structure of Pt layer / Ti layer / Pt layer / Au layer. The first electrode and the second electrode can be formed by, for example, a combination of a vapor deposition method and an etching method or a combination of a vapor deposition method and a lift-off method.

As a support or a substrate, a sapphire substrate (a sapphire substrate having C, R, and A faces as main surfaces), a GaN substrate, a SiC substrate (including 6H, 4H, and 3C), a GaP substrate, a spinel ( MgAl ₂ O ₄ ) substrate,
Si substrate, ZnO substrate, ZnS substrate, AlN substrate, Li
Examples thereof include a MgO substrate, a GaAs substrate and an InAlGaN substrate. Further, a glass substrate can be exemplified as the support. The substrate used during the manufacture of the semiconductor light emitting device and the support constituting the final product, the semiconductor light emitting device, may be made of the same material or may be made of different materials. In the latter case, the element portion may be peeled off from the substrate after the semiconductor light emitting element has been manufactured, and the element portion may be bonded to the support, for example.

In the present invention, as a semiconductor light emitting device,
Mention may be made of semiconductor lasers (LDs) and light emitting diodes (LEDs), or alternatively superluminesence diodes (SLDs). The light emitting diode (LED) may be an edge emitting type or a surface emitting type. First compound semiconductor layer and second
The specific configuration of the compound semiconductor layer of 2 differs depending on whether the semiconductor light emitting element is a semiconductor laser or a light emitting diode. Specific configurations of the first compound semiconductor layer and the second compound semiconductor layer may be optimized depending on the semiconductor light emitting device. Specifically, the first compound semiconductor layer and the second compound semiconductor layer may have, for example, a homojunction structure, or may have a single heterojunction structure or a double heterojunction structure. . Depending on the structure of the semiconductor light emitting device, an active layer may be provided between the first compound semiconductor layer and the second compound semiconductor layer. The active layer may have a single quantum well (SQW) structure, a double quantum well (DQW) structure, or a multiple quantum well (MQW) structure.

In the present invention, since the concave portion exists in the surface region between the first compound semiconductor layer and the contact layer, it is possible to reliably suppress the creeping (surface) leak current or the bulk outermost surface current. You can

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below with reference to the drawings on the basis of an embodiment of the invention (hereinafter, simply referred to as an embodiment).

(Embodiment 1) Embodiment 1 relates to a semiconductor light emitting element of the present invention and a method for manufacturing a semiconductor light emitting element according to the first aspect of the present invention.

The semiconductor light emitting device of the first embodiment has a light emitting diode (L) as shown in the schematic partial sectional view of FIG.
ED). More specifically, (A) a first compound semiconductor layer (n-type cladding layer) having a first conductivity type (n-type in the first embodiment) formed on the sapphire substrate 10 corresponding to the support. 12A, and (B) a second compound semiconductor layer (p-type clad layer) 14 having a second conductivity type (p-type in the first embodiment) formed on the first compound semiconductor layer 12A, (C) A first compound semiconductor layer 12 formed on a sapphire substrate 10 which is a support.
A contact layer 12B having a first conductivity type (n-type) extending from A, (D) a first electrode (n-side electrode) 20 formed on the contact layer 12B, and a second compound semiconductor layer 14 It is composed of a second electrode (p-side electrode) 21 formed above.

A recess 31 is provided in the surface region between the first compound semiconductor layer 12A and the contact layer 12B. In the first embodiment, this recess 31
An insulating material 32 made of SiO ₂ is embedded in the. The second compound semiconductor layer 14 has a rectangular planar shape, and the recess 31 surrounds the second compound semiconductor layer 14 so as to surround the first compound semiconductor layer 12A and the contact layer 1.
It is formed between 2B. Second compound semiconductor layer 1
4, first compound semiconductor layer 12A, contact layer 12
The arrangement of B, the recess 31, the first electrode 20, and the second electrode 21 is schematically shown in the plan view of FIG. In addition, in FIG.
Second compound semiconductor layer 14, first compound semiconductor layer 12
A, the contact layer 12B, the recess 31, the first electrode 20,
These are shaded to clearly show the second electrode 21. In the first embodiment, the width of the recess 31 is 2 μm,
The depth (t ₁ ) of the recess was 2 μm. Further, the thickness t ₀ of the first compound semiconductor layer 12A and the contact layer 12B was set to 3 μm. That is, t ₁ = (2/3) t ₀ .

In the first embodiment, the active layer 13 is formed between the first compound semiconductor layer (n-type clad layer) 12A and the second compound semiconductor layer (p-type clad layer) 14. A buffer layer 11 is formed between the sapphire substrate 10 and the first compound semiconductor layer 12A. The top surface and side surface of the second compound semiconductor layer 14, the side surface of the active layer 13, the top surface and side surface of the first compound semiconductor layer 12A, the insulating material 32, and the contact layer 12B are covered with the insulating material layer 22. . Further, on the first electrode (n-side electrode) 20 and the second electrode (p-side electrode) 21, pad portions 23A, 2 for attaching wiring (not shown) are provided.
3B is provided.

The method of manufacturing the semiconductor light emitting device of the first embodiment will be described below with reference to FIGS. 1 to 3 which are schematic partial end views or partial sectional views of a substrate and the like.

[Step-100] First, for example, a sapphire substrate 10 corresponding to a substrate or a support is MOCVD-processed.
After being loaded into an apparatus (not shown) and exhausting the MOCVD apparatus, the sapphire substrate 10 is heated while flowing a hydrogen gas to remove oxides on the surface of the sapphire substrate 10. Next, the buffer layer 11 made of GaN is formed on the sapphire substrate 10 based on the MOCVD method. In the formation of each layer, trimethylgallium (TM) was used as a Ga source.
G) gas may be used, and ammonia gas may be used as the N source.

Then, on the sapphire substrate 10, the first
A first compound semiconductor layer (n-type clad layer) 12A having a conductivity type (n-type) and a first compound semiconductor layer 12A
Forming a contact layer 12B having a first conductivity type (n type) extending from the. Specifically, for example, the first compound semiconductor layer 12A made of an n-type AlGaN mixed crystal layer to which silicon (Si) is added as an n-type impurity, and the contact layer 12B extending from the first compound semiconductor layer 12A. Are grown on the buffer layer 11. Incidentally, monosilane gas (SiH ₄ gas) may be used as the Si source, and trimethylaluminum (TMA) gas may be used as the Al source. Next, the active layer 13 made of Ga _X In _{1 -X} N (where X ≧ 0) is formed on the entire surface. Note that trimethylindium (TMI) gas may be used as the In source.

Subsequently, a second compound semiconductor layer (p-type clad layer) 14 is formed on the first compound semiconductor layer 12A. Specifically, after growing the active layer 13, the second compound semiconductor layer 14 made of a p-type AlGaN mixed crystal layer to which magnesium (Mg) is added as a p-type impurity is grown on the active layer 13. Cyclopentadienyl magnesium gas may be used as the Mg source. afterwards,
Heat treatment for activating Mg is performed. The first compound semiconductor layer 12A and the contact layer 1 thus obtained
The carrier concentration of 2B was about 2 × 10 ¹⁸ cm ⁻³ , and the volume resistivity R ₀ was 3 × 10 ⁻² Ω · cm.

[Step-110] After that, nickel (N
i) a metal mask (not shown) is formed on the second compound semiconductor layer 14, the second compound semiconductor layer 14 and the active layer 13 are etched, and further, the first compound is formed if necessary. The semiconductor layer 12A and the contact layer 12B are partially etched in the thickness direction to expose the first compound semiconductor layer 12A and the contact layer 12B, and then metal is mixed with a mixed aqueous solution of nitric acid: hydrochloric acid = 3: 1. Remove the mask. Thus, the structure schematically shown in FIG. 1A can be obtained. A photoresist may be used instead of the metal mask.

[Step-120] Next, the recess 31 is formed in the surface region between the first compound semiconductor layer 12A and the contact layer 12B. Specifically, a mask layer 30 made of a resist material is formed on the entire surface by a spin coating method, and an opening is formed in the portion of the mask layer 30 where a recess is to be formed based on the photolithography technique. Layer 1
The boundary region between 2A and the contact layer 12B is exposed.
It is preferable that the mask layer 30 is thereafter irradiated with ultraviolet rays for about 1 minute and 30 seconds from the viewpoint that the mask layer 30 can be easily peeled off in a later step. However, it is not always necessary to irradiate with ultraviolet rays. Then, based on the dry etching technique, the surface region between the first compound semiconductor layer 12A and the contact layer 12B is dry-etched to form a recess 31 having a depth of about 1 μm (see FIG. 1B).

[Step-130] After that, the insulating material 32 made of SiO ₂ is formed on the entire surface including the inside of the recess 31 by the CVD method, the sputtering method, the screen printing method or the spin coating method. Then, the mask layer 30 and the insulating material 3 thereon
By removing 2, it is possible to obtain a structure in which the recess 31 is filled with the insulating material 32 (see FIG. 2A). 2A shows a state in which the top surface of the insulating material 32 in the recess 31 and the top surfaces of the first compound semiconductor layer 12A and the contact layer 12B are substantially aligned with each other, the recess 31 The top surface of the insulating material 32 inside may be in a state of protruding from the top surfaces of the first compound semiconductor layer 12A and the contact layer 12B.

[Step-140] Next, the contact layer 12
A first electrode (n-side electrode) 20 is formed on B, and a second electrode (p-side electrode) 21 is formed on the second compound semiconductor layer 14 (see FIG. 2B). Specifically, a mask layer (not shown) having an opening in a portion where the second electrode 21 is to be formed is formed on the entire surface by a photolithography technique, and is formed on the top surface of the second compound semiconductor layer 14. After the Ni layer (thickness: 15 nm), the Pt layer (thickness: 150 nm) and the Au layer (thickness: 350 nm) are sequentially formed by the electron beam evaporation method, the mask layer is removed. Then, a mask layer (not shown) having an opening in a portion where the first electrode 20 is to be formed is formed on the entire surface by a photolithography technique, and Ti is formed on the top surface of the contact layer 12B by an electron beam evaporation method. Layer (thickness: 15 nm), Pt layer (thickness: 1
50 nm) and an Au layer (thickness: 350 nm) are sequentially formed, and then the mask layer is removed. Then, heat treatment is performed to alloy the electrodes.

[Step-150] After that, the insulating material layer 22 made of photosensitive polyimide is formed on the entire surface by spin coating, and baked in a nitrogen gas atmosphere at 320 ° C. for 3 hours, Further, by using a photolithography technique and an ashing technique, the first electrode (n-side electrode) 20
And the insulating material layer 2 above the second electrode (p-side electrode) 21
2 to form an opening. Then, a Ti layer having a thickness of 50 nm and an aluminum layer having a thickness of 1 μm are formed on the entire surface by a sputtering method, and these are patterned to thereby form the pad portion 23.
A and 23B are formed. In this way, the semiconductor light emitting device including the LED shown in FIG. 3 can be obtained. In the drawings, the pad portions 23A and 23B are represented by one layer.

In the [step-120], the first conversion
Surface between compound semiconductor layer 12A and contact layer 12B
After the region is dry-etched to form the recess 31, the mask is formed.
The layer 30 is removed, and then [Step-140] is performed.
After that (see FIG. 5), a mask layer is formed again, and [Step-
130] to perform SiO 2 over the entire surface including the inside of the recess 31. ₂
Forming an insulating material 32, and then [Step-15
0] may be executed.

Alternatively, in [Step-120],
After the surface region between the first compound semiconductor layer 12A and the contact layer 12B is dry-etched to form the recess 31, the mask layer 30 is removed, and then [Step-14]
0] is performed (see FIG. 5), and then [Step-150] may be performed. In [Step-150], when the insulating material layer 22 made of photosensitive polyimide is formed on the entire surface,
The top and side surfaces of the second compound semiconductor layer 14, the active layer 13
Side surface of the first compound semiconductor layer 12A,
The contact layer 12B is covered with the insulating material layer 22. Further, the recess 31 is filled with the insulating material layer 22. Thus, the semiconductor light emitting device shown in FIG. 6 can be obtained.

(Embodiment 2) Embodiment 2 relates to a semiconductor light emitting element of the present invention and a method for manufacturing a semiconductor light emitting element according to the second aspect of the present invention. Since the structure of the semiconductor light emitting device of the second embodiment can be substantially the same as the structure of the semiconductor light emitting device of the first embodiment shown in FIGS. 3 and 4, detailed description thereof will be omitted.

Hereinafter, a method of manufacturing the semiconductor light emitting device according to the second embodiment will be described with reference to FIG. 7 which is a schematic partial sectional view of a substrate and the like.

[Step-200] First, in the same manner as in [Step-100] of the first embodiment, the buffer layer 11 and the first conductivity type (n-type) first layer are formed on the sapphire substrate 10.
Compound semiconductor layer (n-type clad layer) 12A, and a first conductivity type (n-type clad layer) extending from the first compound semiconductor layer 12A.
Type contact layer 12B, active layer 13, and second compound semiconductor layer (p-type cladding layer) 14 are sequentially formed. After that, the second compound semiconductor layer 14 and the active layer 13 are etched in the same manner as in [Step-110] of the first embodiment, and further, the first compound semiconductor layer 12A and the contact layer 12B are optionally formed. Is partially etched in the thickness direction to expose the first compound semiconductor layer 12A and the contact layer 12B.

[Step-210] Next, in the same manner as in [Step-140] of the first embodiment, the first electrode (n-side electrode) 20 is formed on the contact layer 12B, and the second compound semiconductor layer is formed. A second electrode (p-side electrode) 21 is formed on 14 (see FIG. 7A).

[Step-220] Then, in the same manner as in [Step-120] of the first embodiment, the recess 3 is formed in the surface region between the first compound semiconductor layer 12A and the contact layer 12B.
1 is formed. Specifically, a mask layer made of a resist material is formed on the entire surface by a spin coating method, an opening is formed in the portion of the mask layer where a recess is to be formed based on the photolithography technique, and the first compound semiconductor layer 12A is formed. And the boundary region of the contact layer 12B is exposed. It is preferable that the mask layer is thereafter irradiated with ultraviolet rays for about 1 minute and 30 seconds from the viewpoint that the mask layer can be easily peeled off in a later step. However, it is not always necessary to irradiate with ultraviolet rays. Then, based on the dry etching technique, the surface region between the first compound semiconductor layer 12A and the contact layer 12B is dry-etched to form a recess 31 having a depth of about 1 μm.

[Step-230] After that, the insulating material 32 made of SiO ₂ is formed on the entire surface including the inside of the recess 31 by the CVD method, the sputtering method, the screen printing method, or the spin coating method. After that, by removing the mask layer and the insulating material 32 thereon, a structure in which the recess 31 is filled with the insulating material 32 can be obtained (see FIG. 7B). FIG. 7B shows a state in which the top surface of the insulating material 32 in the recess 31 and the top surfaces of the first compound semiconductor layer 12A and the contact layer 12B are substantially aligned with each other. The top surface of the insulating material 32 inside may be in a state of protruding from the top surfaces of the first compound semiconductor layer 12A and the contact layer 12B.

[Step-240] Next, the insulating material layer 22 and the pad portions 23A and 23B are formed in the same manner as in [Step-150] of the first embodiment to form the LED shown in FIG. A semiconductor light emitting device can be obtained.

[Step-230] may be omitted.
In this case, when the insulating material layer 22 made of photosensitive polyimide is formed on the entire surface in [Step-240], the second
The top surface and side surface of the compound semiconductor layer 14, the side surface of the active layer 13, the top surface and side surface of the first compound semiconductor layer 12A, and the contact layer 12B are covered with the insulating material layer 22. The recess 31 is filled with the insulating material layer 22. In this way, the semiconductor light emitting device including the LED shown in FIG. 6 can be obtained.

(Embodiment 3) Embodiment 3 relates to a semiconductor light emitting element of the present invention and a method for manufacturing a semiconductor light emitting element according to the third aspect of the present invention. Since the structure of the semiconductor light emitting device of the third embodiment can be substantially the same as the structure of the semiconductor light emitting device of the first embodiment shown in FIGS. 3 and 4, detailed description thereof will be omitted.

Hereinafter, a method for manufacturing the semiconductor light emitting device according to the third embodiment will be described with reference to FIGS. 8 and 9 which are schematic partial sectional views of a substrate and the like.

[Step-300] First, in the same manner as in [Step-100] of the first embodiment, for example, a sapphire substrate 10 corresponding to a substrate or a support is loaded into an MOCVD apparatus (not shown), After exhausting the MOCVD apparatus, the sapphire substrate 10 is heated while flowing hydrogen gas to remove oxides on the surface of the sapphire substrate 10. Next, the buffer layer 11 made of GaN is formed on the sapphire substrate 10 based on the MOCVD method.

Thereafter, the first compound semiconductor layer lower layer 112 having the first conductivity type (n type) is formed on the sapphire substrate 10.
A, and a contact layer lower layer 11 having a first conductivity type (n type) extending from the first compound semiconductor layer lower layer 112A.
Form 2B. Specifically, for example, the first compound semiconductor layer lower layer 112A and the contact layer lower layer 112B formed of an n-type AlGaN mixed crystal layer doped with silicon (Si) as an n-type impurity are grown on the buffer layer 11.

[Step-310] Next, the sapphire substrate 10 is unloaded from the MOCVD apparatus, and based on, for example, the CVD method, the photolithography technique, and the etching technique, the first compound semiconductor layer lower layer 112A and the contact layer lower layer 1 are formed.
Insulating layer 13 made of SiO ₂ on the region between 12B
2 is formed (see FIG. 8A). The insulating layer 132 is
It is formed between the first compound semiconductor layer lower layer 112A and the contact layer lower layer 112B so as to surround the second compound semiconductor layer 14 formed in a later step.

[Step-320] After that, the sapphire substrate 10 is again loaded into the MOCVD apparatus, and the MOCVD method is used to deposit the first compound semiconductor layer lower layer 112A, the contact layer lower layer 112B, and the insulating layer 132, respectively. Furthermore, a first compound semiconductor layer upper layer (n-type cladding layer) 112a having a first conductivity type (n-type), a first conductivity type (n-type)
Contact layer upper layer 112b having a first conductivity type (n
An insulating layer coating layer 112c having a mold is formed (see FIG. 8B).

[Step-330] After that, in the same manner as in [Step-100] of the first embodiment, Ga _X In _{1 -X is formed on the} entire surface.
A second active layer 13 made of N (where X ≧ 0) is formed, and a second p-type AlGaN mixed crystal layer is formed on the active layer 13 by adding magnesium (Mg) as a p-type impurity.
The compound semiconductor layer (p-type clad layer) 14 is grown.

[Step-340] Thereafter, in the same manner as in [Step-110] of the first embodiment, a metal mask (not shown) made of nickel (Ni) is formed on the second compound semiconductor layer 14. , The second compound semiconductor layer 14 and the active layer 1 above the contact layer upper layer 112b and the insulating layer 132.
3 is further etched, and further the insulating layer coating layer 112c and the contact layer upper layer 112b are etched to form the insulating layer 1
After exposing a part of 32 and the contact layer upper layer 112b, the metal mask is removed using a mixed aqueous solution of nitric acid: hydrochloric acid = 3: 1. In this way, the structure schematically shown in FIG. 9 can be obtained. A photoresist may be used instead of the metal mask. In the structure shown in FIG. 9, the top surface of the insulating material 32 in the recess 31 and the top surface of the contact layer upper layer 112b are substantially aligned with each other. However, the top surface of the insulating material 32 in the recess 31 is shown. May project from the top surface of the contact layer upper layer 112b.

[Step-350] Next, as in [Step-140] of the first embodiment, the first electrode (n-side electrode) 20 is formed on the contact layer 12B, and the second compound semiconductor layer is formed. After the second electrode (p-side electrode) 21 is formed on the substrate 14, in the same manner as in [Step-150] of the first embodiment,
By forming the insulating material layer 22 and forming the pad portions 23A and 23B, it is possible to obtain a semiconductor light emitting element including an LED.

In the [Step-340], the second compound semiconductor layer 14, the active layer 13, the first compound semiconductor layer upper layer 112a, the insulating layer coating layer 112c and the contact layer upper layer 112b are etched to form the insulating layer. 132, the first compound semiconductor layer upper layer 112a and the contact layer upper layer 11
2b may be exposed. The structure thus obtained is schematically shown in FIG.

The present invention has been described above based on the embodiments, but the present invention is not limited to these. In some cases, the recess may have a structure in which it is not filled with an insulating material, an insulating material layer, or an insulating layer. The structure of each layer and the material forming each layer described in the embodiments are examples, and can be appropriately changed. Further, the first conductivity type may be p-type and the second conductivity type may be n-type.

In the embodiment, the semiconductor light emitting element is L
Although the ED is used, the semiconductor light emitting element may be a semiconductor laser. 11 to 13 are schematic partial sectional views of the semiconductor laser. The semiconductor lasers shown in FIGS. 11 to 13 include a buffer layer 211 made of GaN formed on a support (substrate) 10, for example, an n-type GaN layer doped with silicon (Si) as an n-type impurity. The n-side contact layer 212A made of n, the n-type clad layer 213 made of an n-type AlGaN mixed crystal layer having silicon (Si) added as an n-type impurity, and the n type having silicon (Si) added as an n-type impurity
-Type GaN layer n-type guide layer 214, Ga _x In _{1 -X} N different composition (where X ≧ 0) mixed crystal layers are stacked, active layer 215 having a multiple quantum well structure, and magnesium as a p-type impurity (Mg) -added p-type GaN p-type guide layer 216, p-type impurities magnesium (Mg) -added p-type AlGaN mixed crystal layer 217, and p-type impurities magnesium (M
g) is added to the p-type GaN layer to form the p-side contact layer 218. The first compound semiconductor layer is
n-side contact layer 212A, n-type cladding layer 213, n
The second compound semiconductor layer includes a p-type guide layer 216, a p-type clad layer 217, and a p-side contact layer 218. The contact layer 212B extends from the n-side contact layer 212A. Further, the recess 231 is provided in the surface region between the contact layer 212B and the n-side contact layer 212A. Incidentally, in the semiconductor laser shown in FIG.
31 is filled with an insulating material 232. On the other hand, FIG.
In the semiconductor laser shown in FIG. 2, the recess 231 is filled with the insulating material layer 22. Furthermore, the semiconductor laser shown in FIG. 13 is manufactured by the manufacturing method described in the third embodiment. Here, in FIG. 13, reference numeral 2
12A, 212a, 212B, and 212b are an n-side contact layer lower layer, an n-side contact layer upper layer, a contact layer lower layer, and a contact layer upper layer. The structure of the semiconductor laser is not limited to the structure shown in FIGS.

Further, in the embodiment, the recess 31 is formed so as to surround the second compound semiconductor layer 14, but the shape of the recess is not limited to this. The layout of the second compound semiconductor layer 14, the first compound semiconductor layer 12A, the contact layer 12B, the recess 31, the first electrode 20, and the second electrode 21 is schematically shown in plan views of FIGS. 14 to 16. . 14 to 16, in order to clearly show the second compound semiconductor layer 14, the first compound semiconductor layer 12A, the contact layer 12B, the recess 31, the first electrode 20, and the second electrode 21, These are shaded. As shown in FIG. 14, a recess 31 may be formed between the first compound semiconductor layer 12A and the contact layer 12B so as to surround the contact layer 12B. Alternatively, FIG. 15 and FIG.
As shown in FIG. 6, the planar shape of the region between the first compound semiconductor layer 12A and the contact layer 12B may be rectangular, and the stripe-shaped recess 31 may be formed in this rectangular region. The buffer layer 11 may be exposed as shown in FIG. In short, when the first compound semiconductor layer 12A and the contact layer 12B are connected to each other by an arbitrary linear path, the recess 31 is necessarily present in this path.
Alternatively, when the projection image of the portion 14A of the second compound semiconductor layer 14 close to the contact layer 12B and the projection image of the contact layer 12B are connected by an arbitrary linear path, the projection image is always included in this path. It suffices if the recess 31 is present. still,
The structures shown in FIGS. 14 to 16 can be applied to the semiconductor light emitting element (LED) of the various embodiments or the above semiconductor laser.

In the embodiment, the substrate and the support are the same, but the substrate and the support may be different. In this case, for example, a temporary holding substrate is prepared. This temporary holding substrate is a substrate for holding the semiconductor light emitting element when the semiconductor light emitting element is transferred. An adhesive layer is applied to the surface of the temporary holding substrate. Then, the semiconductor light emitting elements on the sapphire substrate 10 are individually separated, and each of the semiconductor light emitting elements is pressure-bonded to the surface of the adhesive material layer. Then, a high-power pulsed ultraviolet laser such as an excimer laser light is irradiated as an energy beam so that the sapphire substrate 10 is transmitted from the back surface side to the front surface side.
By irradiation with this high-power pulsed ultraviolet laser, the buffer layer 11 is decomposed into nitrogen gas and metallic gallium near the interface between the sapphire substrate 10 and the buffer layer 11, and the buffer layer 1
The bonding force between 1 and the sapphire substrate 10 is weakened, and as a result, the buffer layer 11 can be easily peeled from the sapphire substrate 10. After the sapphire substrate 10 is peeled off, each semiconductor light emitting element is held in the adhesive material layer of the temporary holding substrate in the element-isolated state. Then, the surface of the buffer layer 11 is adsorbed by the adsorption jig. When the suction portion of the suction jig comes into contact with the back surface of the buffer layer 11, it is possible to perform necessary suction by reducing the internal pressure of the suction hole provided in the suction jig. Next, the semiconductor light emitting elements can be individually removed from the temporary holding substrate by separating the suction jig from the temporary holding substrate. After that, the individual semiconductor light emitting elements may be adhered to a support made of, for example, a glass substrate using, for example, a conductive adhesive for bonding.

Further, in the embodiment, the first compound semiconductor layer, the active layer, and the second compound semiconductor layer are planar, but instead, a schematic partial sectional view is shown in FIG. As described above, the shape may be a cone. Hereinafter, an outline of the method for manufacturing the semiconductor light emitting device including the LED shown in FIG. 19 will be described with reference to FIGS. 17 and 18.

First, a mask layer 340 made of SiO ₂ or SiN and having a thickness of 100 to 500 nm is formed on the entire surface of the sapphire substrate 10 having the C + surface as the main surface, and then a substantially rectangular opening having a side of about 100 μm is formed. 341 is formed by photolithography and wet etching using a hydrofluoric acid-based etchant (see FIG. 17A). The size of the opening 341 may be changed according to the characteristics of the semiconductor light emitting device to be manufactured.

Next, a buffer layer (not shown) of GaN having a thickness of about 20 nm to 30 nm was grown on the exposed surface of the sapphire substrate 10 at a low temperature of about 500 ° C. by MOCVD. Then, at a temperature of about 1000 ° C., an n-side contact layer 311A made of an n-type GaN layer doped with silicon (Si) as an n-type impurity and a contact layer 311B extending from the n-side contact layer 311A are formed. It is formed on the exposed sapphire substrate 10 (see FIG. 17B). Growth temperature 100 in hydrogen atmosphere
When the growth is continued for a while while maintaining 0 ° C., the n-side contact layer 311A and the contact layer 311B spread slightly in the lateral direction.

After that, a recess 331 is formed in the surface region between the n-side contact layer 311A and the contact layer 311B by the photolithography technique and the etching technique (see FIG. 17C).

Next, a mask layer 342 is formed on the n-side contact layer 311A and the contact layer 311B, and the n-side contact layer 311 is formed by a photolithography technique.
A substantially circular opening 343 is provided in the mask layer 342 above A (see FIG. 18A).

After that, the opening 343 is formed by MOCVD.
On the n-side contact layer 311A exposed at the bottom of the
An n-type clad layer 312 made of an n-type GaN layer doped with silicon (Si) as a type impurity is formed. The shape of the n-type cladding layer 312 is a hexagonal pyramid. The surface of the hexagonal pyramidal n-type cladding layer 312 is covered with the S (1-101) plane. When the growth conditions such as a short growth time are different, the n-type cladding layer 312 has a hexagonal trapezoidal shape (truncated hexagonal pyramid) having a C + surface whose upper surface side is parallel to the main surface of the substrate. When the growth of the n-type clad layer 312 having a hexagonal pyramid is continued for a while, and one side of the bottom surface of the hexagonal pyramid is about 7.5 to 10 μm, the height is about 1.6 times that side as a hexagonal pyramid. Become. That is, the height is about 10 to 16 μm. The first compound semiconductor layer is composed of the n-side contact layer 311A and the n-type cladding layer 312.

After that, Ga _X In _1-X N (where X ≧ 0)
Of the second compound semiconductor layer (p-type clad layer 31) formed of a p-type AlGaN mixed crystal layer to which magnesium (Mg) is added as a p-type impurity.
4) Grow. Then, on the outermost layer (p-type clad layer 314) grown into a hexagonal pyramid, Ni layer / Pt layer / Au
The second electrode (p-side electrode) 21 is formed by depositing a layer or a Ni-Pd layer / Pt layer / Au layer (FIG. 1).
8 (B)).

Then, the mask layer 342 on the contact layer 311B is removed by a photolithography technique and an etching technique, and a Ti layer / Al layer / Pt layer / Au layer is vapor-deposited on the exposed contact layer 311B. The first electrode 20 (n-side electrode) is formed. In this way, a semiconductor light emitting device including an LED having the structure shown in FIG. 19 can be completed.

Since the semiconductor light emitting device having such a structure uses the S-plane inclined with respect to the main surface of the substrate, the number of bonds from nitrogen atoms to gallium atoms is increased, which is effective. The V / III ratio can be increased, and the performance of the obtained semiconductor light emitting device can be improved. Further, since the main surface of the substrate is the C + surface and the S surface is a surface different from the main surface of the substrate, dislocations extending upward from the substrate may be bent, and defects can be reduced. Further, by using an inclined crystal plane inclined with respect to the main surface of the substrate, multiple reflection can be prevented and the generated light can be efficiently guided to the outside of the semiconductor light emitting element.

Depending on the MOCVD conditions, the element portion of the semiconductor light emitting element has a hexagonal pyramid or a hexagonal trapezoidal shape (truncated hexagonal pyramid) as described above, or a square pyramid or a square trapezoidal shape (truncated square pyramid). Becomes Also, the mask layer 3
If the planar shape of the opening 341 provided in 40 is an elongated rectangle, the element portion of the semiconductor light emitting element has an elongated hexagonal pyramid or hexagonal trapezoidal shape (truncated hexagonal pyramid), or
It becomes a trapezoidal three-dimensional shape having four slopes and one top surface.

[0072]

According to the present invention, the presence of the recess in the surface region between the first compound semiconductor layer and the contact layer ensures that the creeping (surface) leak current or the bulk outermost surface current flows. Can be suppressed. As a result, the current is bulk (first compound semiconductor layer,
Since it flows predominantly in the region between the first compound semiconductor layer and the contact layer, the contact layer), it is possible to improve the light emission efficiency of the semiconductor light emitting device and suppress the in-plane light emission variation.

[Brief description of drawings]

FIG. 1 is a schematic partial end view of a substrate and the like for explaining a method for manufacturing a semiconductor light emitting device according to a first embodiment of the invention.

FIG. 2 is a schematic partial cross-sectional view of the substrate and the like for explaining the method for manufacturing the semiconductor light emitting device according to the first embodiment of the invention, following FIG. 1;

FIG. 3 is a schematic partial cross-sectional view of the substrate and the like for explaining the method for manufacturing the semiconductor light emitting device according to the first embodiment of the invention, following FIG. 2;

FIG. 4 is a plan view schematically showing the arrangement of a second compound semiconductor layer, a first compound semiconductor layer, a contact layer, and a recess in the semiconductor light emitting device according to the first embodiment of the invention.

FIG. 5 is a schematic partial end view of a substrate and the like for explaining the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention.

FIG. 6 is a schematic partial end view of the substrate and the like for explaining the method for manufacturing the semiconductor light emitting device according to the first embodiment of the invention, following FIG. 5;

FIG. 7 is a schematic partial cross-sectional view of a substrate or the like for explaining a method for manufacturing a semiconductor light emitting device according to a second embodiment of the invention.

FIG. 8 is a schematic partial cross-sectional view of a substrate or the like for explaining a method for manufacturing a semiconductor light emitting device according to a third embodiment of the invention.

FIG. 9 is a schematic partial cross-sectional view of the substrate etc. for explaining the method for manufacturing the semiconductor light emitting device according to the third embodiment of the invention, following FIG. 8;

FIG. 10 is a schematic partial cross-sectional view of a substrate or the like for explaining a modified example of the method for manufacturing a semiconductor light emitting device according to the third embodiment of the invention.

FIG. 11 is a schematic partial cross-sectional view of a semiconductor laser when the semiconductor light emitting device of the present invention is used as a semiconductor laser.

FIG. 12 is a schematic partial cross-sectional view of a modification of a semiconductor laser when the semiconductor light emitting device of the present invention is used as a semiconductor laser.

FIG. 13 is a schematic partial cross-sectional view of another modification of the semiconductor laser when the semiconductor light emitting device of the present invention is used as the semiconductor laser.

FIG. 14 is a plan view schematically showing a modified example of the arrangement of the second compound semiconductor layer, the first compound semiconductor layer, the contact layer, and the recess in the semiconductor light emitting device of the present invention.

FIG. 15 is a plan view schematically showing another modified example of the arrangement of the second compound semiconductor layer, the first compound semiconductor layer, the contact layer, and the recess in the semiconductor light emitting device of the present invention.

FIG. 16 is a plan view schematically showing still another modified example of the arrangement of the second compound semiconductor layer, the first compound semiconductor layer, the contact layer, and the recess in the semiconductor light emitting device of the present invention.

FIG. 17 is a schematic partial cross-sectional view of a substrate or the like for explaining an outline of a method for manufacturing a semiconductor light emitting device in which the first compound semiconductor layer, the active layer, and the second compound semiconductor layer have a pyramidal shape. Is.

18 is a continuation of FIG. 17, the first compound semiconductor layer,
FIG. 6 is a schematic partial cross-sectional view of a substrate or the like for explaining the outline of a method for manufacturing a semiconductor light emitting device in which the active layer and the second compound semiconductor layer have a conical shape.

19 is a continuation of FIG. 18, a first compound semiconductor layer;
FIG. 6 is a schematic partial cross-sectional view of a substrate or the like for explaining the outline of a method for manufacturing a semiconductor light emitting device in which the active layer and the second compound semiconductor layer have a conical shape.

FIG. 20 is a schematic partial cross-sectional view of an LED using a conventional gallium nitride-based compound semiconductor.

[Explanation of symbols]

10 ... Sapphire substrate, 11 ... Buffer layer, 1
2, 12A ... First compound semiconductor layer, 12B ...
Contact layer, 13 ... Active layer, 14 ... Second compound semiconductor layer, 20 ... First electrode, 21 ... Second
Electrode, 22 ... Insulating material layer, 23A, 23B ...
Pad portion, 30 ... Mask layer, 31 ... Recessed portion, 32
... Insulating material, 112A ... First compound semiconductor layer lower layer, 112a ... First compound semiconductor layer upper layer, 11
2B ... Contact layer lower layer, 112b ... Contact layer upper layer, 112c ... Insulating layer coating layer, 132 ...
Insulating layer, 211 ... Buffer layer, 212 ... N-side contact layer, 213 ... N-type cladding layer, 214 ...
.N-type guide layer, 215 ... active layer, 216 ... p
Mold guide layer, 217 ... P-type clad layer, 218 ...
・ P-side contact layer

Claims (15)

[Claims] 1. A first compound semiconductor layer having a first conductivity type formed on a support, and (B) having a second conductivity type formed on a first compound semiconductor layer. A second compound semiconductor layer; (C) a contact layer formed on the support and having a first conductivity type; extending from the first compound semiconductor layer; and (D) a first contact layer formed on the contact layer. And a (E) second electrode formed on the second compound semiconductor layer, wherein the surface region between the first compound semiconductor layer and the contact layer comprises: A semiconductor light emitting device having a recess. 2. The semiconductor light emitting device according to claim 1, wherein an insulating material is embedded in the recess. 3. The insulating material is SiO ₂ , SiN, SiO
_{3. At} least one material selected from the group consisting of N, Al ₂ O ₃ and polyimide.
The semiconductor light-emitting device according to. 4. The semiconductor light emitting device according to claim 1, further comprising an insulating material layer that covers at least the top surface and the side surface of the second compound semiconductor layer and further fills the recess. 5. (a) A first substrate having a first conductivity type on a substrate.
Forming a compound semiconductor layer and a contact layer having a first conductivity type extending from the first compound semiconductor layer; and (b) forming a second compound semiconductor layer on the first compound semiconductor layer. And (c) forming a recess in the surface region between the first compound semiconductor layer and the contact layer, and (d) forming a first electrode on the contact layer and forming a second compound semiconductor. And a step of forming a second electrode on the layer, the method for manufacturing a semiconductor light emitting device. 6. The method for manufacturing a semiconductor light emitting device according to claim 5, further comprising a step of filling the recess with an insulating material between the step (c) and the step (d). 7. The method according to claim 5, further comprising a step of filling the recess with an insulating material after the step (d).
A method for manufacturing the semiconductor light emitting device according to. 8. The insulating material is SiO ₂ , SiN, SiO
7. At least one material selected from the group consisting of N, Al ₂ O ₃ and polyimide.
Alternatively, the method for manufacturing the semiconductor light emitting device according to claim 7. 9. The method according to claim 5, wherein after the step (d), at least a top surface and a side surface of the second compound semiconductor layer are covered and an insulating material layer filling the recess is formed. A method for manufacturing a semiconductor light emitting device as described above. 10. A step of forming a first compound semiconductor layer having a first conductivity type and a contact layer having a first conductivity type extending from the first compound semiconductor layer on a substrate. And (b) a step of forming a second compound semiconductor layer on the first compound semiconductor layer, and (c) a first electrode formed on the contact layer and a second compound semiconductor layer formed on the second compound semiconductor layer. A method of manufacturing a semiconductor light emitting device, comprising: a step of forming an electrode; and (d) a step of forming a recess in a surface region between the first compound semiconductor layer and the contact layer. 11. The method for manufacturing a semiconductor light emitting device according to claim 10, further comprising a step of filling the recess with an insulating material after the step (d). 12. The insulating material is SiO ₂ , SiN, SiO.
_{2. At} least one material selected from the group consisting of N, Al ₂ O ₃ and polyimide.
1. The method for manufacturing the semiconductor light emitting device according to 1. 13. The method according to claim 10, wherein after the step (d), at least a top surface and a side surface of the second compound semiconductor layer are covered and an insulating material layer filling the recess is formed. A method for manufacturing a semiconductor light emitting device as described above. 14. (a) A first compound semiconductor layer lower layer having a first conductivity type and a contact layer lower layer having a first conductivity type extending from the first compound semiconductor layer lower layer are formed on a substrate. After that, an insulating layer is formed on a region between the first compound semiconductor layer lower layer and the contact layer lower layer, and then, on each of the first compound semiconductor layer lower layer, the contact layer lower layer and the insulating layer, Furthermore, a step of forming a first compound semiconductor layer upper layer having the first conductivity type, a contact layer upper layer having the first conductivity type, and an insulating layer coating layer having the first conductivity type; After forming the compound semiconductor layer, at least a step of removing the second compound semiconductor layer on the contact layer and a portion of the insulating layer coating layer adjacent to the contact layer to expose the contact layer, and (c) contact First on layer Forming an electrode, a method of manufacturing a semiconductor light emitting device characterized by comprising the step, of forming a second electrode on the second compound semiconductor layer. 15. The insulating layer is formed of SiO ₂ , SiN, SiON.
15. The method for manufacturing a semiconductor light emitting device according to claim 14, comprising at least one material selected from the group consisting of Al ₂ O ₃ and Al ₂ .