JP2003086816A5 - - Google Patents

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JP2003086816A5
JP2003086816A5 JP2001271419A JP2001271419A JP2003086816A5 JP 2003086816 A5 JP2003086816 A5 JP 2003086816A5 JP 2001271419 A JP2001271419 A JP 2001271419A JP 2001271419 A JP2001271419 A JP 2001271419A JP 2003086816 A5 JP2003086816 A5 JP 2003086816A5
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Japan
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JP2001271419A
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JP4463448B2 (ja
JP2003086816A (ja
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JP2001271419A 2001-09-07 2001-09-07 ＳｉＣ基板及びＳｉＣ半導体素子の製造方法 Expired - Fee Related JP4463448B2 (ja)

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JP2001271419A JP4463448B2 (ja) 2001-09-07 2001-09-07 ＳｉＣ基板及びＳｉＣ半導体素子の製造方法

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JP2001271419A JP4463448B2 (ja) 2001-09-07 2001-09-07 ＳｉＣ基板及びＳｉＣ半導体素子の製造方法

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JP2003086816A JP2003086816A (ja) 2003-03-20
JP2003086816A5 true JP2003086816A5 (ja) 2006-03-16
JP4463448B2 JP4463448B2 (ja) 2010-05-19

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology

Families Citing this family (22)

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Publication number Priority date Publication date Assignee Title
JP2005093898A (ja) * 2003-09-19 2005-04-07 Sanyo Electric Co Ltd 結晶基板および素子の製造方法
US6974720B2 (en) * 2003-10-16 2005-12-13 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
JP2005197464A (ja) 2004-01-07 2005-07-21 Rohm Co Ltd 半導体装置の製造方法
US7772098B2 (en) 2007-03-29 2010-08-10 Panasonic Corporation Method for manufacturing semiconductor device
JP2009130266A (ja) 2007-11-27 2009-06-11 Toshiba Corp 半導体基板および半導体装置、半導体装置の製造方法
JP4532536B2 (ja) 2007-12-19 2010-08-25 トヨタ自動車株式会社 半導体装置
DE112011101625B4 (de) 2010-05-10 2016-03-10 Mitsubishi Electric Corporation Epitaktische Siliciumcarbid-Wafer und Herstellungsverfahren für diese, Siliciumcarbid-Massensubstrat für epitaktisches Wachstum und Herstellungsverfahren für dieses
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
JP5818853B2 (ja) 2013-10-15 2015-11-18 株式会社トクヤマ ｎ型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス
JP6222771B2 (ja) * 2013-11-22 2017-11-01 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置の製造方法
JP5939362B2 (ja) * 2014-04-18 2016-06-22 富士電機株式会社 半導体装置の製造方法
WO2016017480A1 (ja) 2014-08-01 2016-02-04 株式会社トクヤマ ｎ型窒化アルミニウム単結晶基板
JP6483838B2 (ja) * 2015-08-21 2019-03-13 株式会社日立製作所 半導体基板、半導体基板の研削方法および半導体装置の製造方法
JP6767705B2 (ja) 2016-04-28 2020-10-14 パナソニックＩｐマネジメント株式会社 半導体素子
KR101922469B1 (ko) 2017-05-12 2018-11-28 (주)디에스테크노 화학기상증착 저 저항 실리콘 카바이드 벌크 제조 장치
JP7054853B2 (ja) * 2018-02-07 2022-04-15 パナソニックＩｐマネジメント株式会社 炭化珪素半導体素子およびその製造方法
EP4044212B1 (en) * 2019-11-14 2024-02-14 Huawei Digital Power Technologies Co., Ltd. Semiconductor substrate, manufacturing method therefor, and semiconductor device
US11594441B2 (en) 2021-04-09 2023-02-28 Applied Materials, Inc. Handling for high resistivity substrates
WO2023173335A1 (zh) * 2022-03-16 2023-09-21 华为技术有限公司 碳化硅功率器件及其制备方法、功率转换模块

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9165779B2 (en) 2012-10-26 2015-10-20 Dow Corning Corporation Flat SiC semiconductor substrate
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology

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