JP2003084040A - Manufacturing method for semiconductor inspecting device and semiconductor inspecting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor inspecting device and a semiconductor inspecting device, capable of easily coping with an increase in number of electrodes for inspection, facilitating manufacture, and absorbing a large difference in height between the adjacent electrodes. SOLUTION: In the manufacturing method for the semiconductor inspecting device and the inspecting device, a contact needle 34 is brought into contact with an electrode formed on the surface of the semiconductor device, thereby performing electric inspection for the semiconductor device. A through hole 26 and a wiring layer 28 for transmitting an inspection signal are formed in a base board 22 pressed to the semiconductor device, and a conductive rubber member 32 is formed in the through hole 26. The contact needle 34 is penetrated through the conductive rubber member 32 to hold the contact needle 34.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor inspection device and a semiconductor inspection device, and particularly suitable for collectively inspecting a plurality of semiconductor devices formed on a semiconductor wafer before dicing (pelletizing). The present invention relates to a method for manufacturing a semiconductor inspection device and a semiconductor inspection device.

[0002]

2. Description of the Related Art Conventionally, there is known a manufacturing method in which a semiconductor wafer made of single crystal silicon is put into a plurality of steps to form a plurality of semiconductor devices on the surface thereof. In such a manufacturing method, since the added value of the semiconductor device becomes higher as the manufacturing process progresses to the later stage, if the defect of the semiconductor device is known for the first time at the end of the manufacturing process, the loss amount becomes very large. For this reason, it is desirable to find defective semiconductor devices that have occurred in the wafer as early as possible in the manufacturing process and to actively exclude them. It is also preferable to inspect the semiconductor device during the manufacturing process from the viewpoint of grasping the non-defective rate in each process.

FIG. 7 is an explanatory view showing the structure of a conventional first semiconductor inspection apparatus. As shown in the figure, in the conventional semiconductor inspection device 1, a plurality of needle-shaped contact pins 3 are pulled out from the holder 2. The tip of the contact pin 3 can come into contact with the electrode 5 of the semiconductor device 4 to be inspected, and an inspection circuit (not shown) provided outside the holder 2 via the contact pin 3 is used. Inspection signals can be transmitted and received to and from the semiconductor device 4. The number of contact pins 3 is plural for one semiconductor device 1 (it varies depending on the pitch, etc.), and in addition to the power supply and GND, some ports are turned ON / OF.
F check is performed.

FIG. 8 is a sectional view showing the structure of a second conventional semiconductor inspection apparatus. As shown in the figure, the conventional semiconductor inspection device 6 is mounted on a holder 2 for attachment to an external inspection jig (not shown). In the semiconductor inspection device 6, the wiring layer 8 is formed on the upper layer of the base substrate 7, and the anisotropic conductive rubber 9 or the anisotropic conductive member (paste) having conductivity in the vertical direction is formed on the wiring layer 8. And film) are provided. In addition, the insulating film 11 having the inspection bumps 10 is formed on the anisotropic conductive rubber 9 or the anisotropic conductive member (paste or film).
Is provided, and the anisotropic conductive rubber 9 or the anisotropic conductive member (paste or film) establishes electrical connection between the wiring layer 8 and the inspection bump 10. In the semiconductor inspection device 6 configured as described above, when the holder 7 is lowered to bring the inspection bump 10 into contact with the electrode of the semiconductor device, the inspection signal is transmitted from the wiring layer 8 to the anisotropic conductive rubber 9 or. It is transmitted to the semiconductor device side through the anisotropic conductive member (paste or film) and the inspection bump 10 so that the semiconductor device can be inspected. Note that variations in the height of electrodes in semiconductor devices and bumps for inspection 1
Even if the height variation of 0 occurs, the variation is absorbed by the elastic deformation of the anisotropic conductive rubber 9 or the anisotropic conductive member (paste or film), and the electrode and the inspection bump 1
It is possible to secure electrical continuity with zero.

FIG. 9 is an explanatory view showing the appearance of a contactor of a conventional third semiconductor inspection apparatus. A semiconductor inspection device 12 as shown in the figure is provided with a contactor 14 in which a crank-shaped bent portion 13 is formed. And bent part 1
The tip end of the contactor 14 is brought into contact with the electrode 16 of the semiconductor device 15 by utilizing the elastic force of No. 3 to achieve electrical conduction. The contactor 14 as shown in the figure is formed by wire bonding used in the manufacture of semiconductor devices.

[0006]

However, any of the above-mentioned semiconductor inspection devices has the following problems. That is, in the pin contact method as shown in the first semiconductor inspection apparatus, there is a problem in that the arrangement and the number of contact pins are limited, and it is not possible to simultaneously contact a large number of semiconductor devices formed on a semiconductor wafer. It was In addition, there is also a problem that the production cost rises in proportion to the number of pins due to the contact using the pins.

Further, in the method using the conductive rubber as shown in the second semiconductor inspection apparatus, although it is easier to make contact with a plurality of electrodes of the semiconductor device as compared with the first semiconductor inspection apparatus, the wiring layer and the elastic layer are elastic. Since the layers must be formed and the wiring layer and the inspection bumps must be bonded to each other via the conductive rubber, there is a problem that the inspection apparatus itself is difficult to manufacture.

In the third inspection apparatus, since the bent portions are provided on the contactors, there is a possibility that the contactors interfere with each other when the pitch of the contactors is narrowed. Therefore, when the number of electrodes to be inspected increases, there is a problem in that some electrodes cannot be contacted with the contacts.

Focusing on the above-mentioned conventional problems, the present invention can easily cope with an increase in the number of electrodes for inspection and is easy to manufacture, and even if the height of adjacent electrodes is large. An object of the present invention is to provide a method for manufacturing a semiconductor inspection device and a semiconductor inspection device capable of absorbing the difference in height.

[0010]

According to the present invention, an electrically conductive elastic body is penetrated through an electric path between an electrode formed on a surface of a semiconductor device and a wiring layer, and the elastic body. If the contact needle is used, abrasion resistance against contact with the electrode can be ensured by the contact needle, and variation in the height direction of adjacent electrodes can be absorbed by the elastic body. It is a thing.

That is, a method of manufacturing a semiconductor inspection device according to the present invention is a method of manufacturing a semiconductor inspection device in which a contact needle is brought into contact with an electrode formed on the surface of the semiconductor device to electrically inspect the semiconductor device. A through hole is formed in the base substrate that is pressed against the semiconductor device, and a wiring layer that transmits a test signal is formed from the inner wall surface of the through hole to the upper layer side of the base substrate. After forming an elastic body made of a conductive member, the contact needle is passed through the elastic body, and the contact needle is held by the elastic body.

Another method of manufacturing a semiconductor inspection device according to the present invention is a method of manufacturing a semiconductor inspection device in which a contact needle is brought into contact with an electrode formed on the surface of the semiconductor device to electrically inspect the semiconductor device. There, a through hole is formed in the base substrate that presses against the semiconductor device,
After forming an elastic body in the through hole, the contact needle is passed through the elastic body, the contact needle is held by the elastic body, and the wiring layer is connected to the rear end of the contact needle. .

After the conductive rubber member is filled in the through hole with a squeegee, the contact needle is passed through the conductive rubber member, or the bonding wire is passed through the elastic body by raising and lowering the capillary, and the elastic body is pressed. It is preferable that the bonding wire penetrating the body is used as the contact needle.

Further, the semiconductor inspection device according to the present invention is a semiconductor inspection device which contacts an electrode formed on the surface of the semiconductor device and electrically inspects the semiconductor device so as to correspond to the position of the electrode. From a base substrate having a through hole, an elastic body filled in the through hole and made of a conductive member, a contact needle penetrating the elastic body and held by the elastic body, and an inner wall surface of the through hole A wiring layer is provided on the upper side of the base substrate to transmit an inspection signal.

Further, another semiconductor inspection device according to the present invention is a semiconductor inspection device which contacts an electrode formed on the surface of the semiconductor device to electrically inspect the semiconductor device and corresponds to the position of the electrode. A base substrate having a through hole formed therein, an elastic body filled in the through hole, a contact needle penetrating the elastic body and held by the elastic body, and a rear end side of the contact needle. It is configured to have a wiring layer that is connected and transmits the inspection signal.

A deformable support member for holding the contact needle is provided on the rear end side of the contact needle,
It is preferable that the amount of movement of the contact needle is adjusted by the deformation of the support member, or that the elastic body is a conductive rubber member.

According to the method for manufacturing a semiconductor inspection device and the semiconductor inspection device as described above, when the base substrate is brought into contact with the semiconductor device, there are variations in height between the electrodes of the semiconductor device, Alternatively, even if there is height variation between the contact needles, the elastic body inside the through hole is deformed to absorb these dimension variations, and all electrodes and contact needles can be brought into close contact with each other. It is possible to achieve electrical continuity. Further, since the variation in the height direction can be absorbed by the elastic body, the hardness of the contact needle can be improved and the wear resistance of the contact needle can be improved. Further, if a supporting member is arranged on the rear end side of the contact needle, the deformation of the supporting member becomes a resistance, and it is possible to set the width wider than the deforming force of the elastic body provided in the through hole. Become.

If the elastic body is formed of a conductive rubber member,
The conductive rubber member can be housed in the through hole with a squeegee, and the characteristics of the elastic body can be changed by changing the amount and hardness of the conductive rubber member. On the other hand, if the wiring layer is connected to the rear end of the contact needle, the elastic body located in the through hole does not need to have conductivity, and the selection range of the elastic body can be expanded.

Since the elastic body is deformed with respect to each contact needle, even if the heights of the adjacent electrodes in the semiconductor device are greatly different, there is no effect on this dimensional difference and the contact needles are not affected. Can be brought into contact with the electrode. Further, since the contact needle penetrates the base substrate, the length of the contact needle can be freely adjusted without depending on the thickness of the base substrate.

If a capillary is used to form the contact needle and the bonding wire is used as the contact needle, the tip of the contact needle can be aligned with the tip of the capillary.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Specific embodiments suitable for a method of manufacturing a semiconductor inspection device and a semiconductor inspection device according to the present invention will be described in detail below with reference to the drawings. FIG. 1 is a sectional structural view of the semiconductor measuring device according to the present embodiment.
As shown in the figure, the semiconductor inspection device 20 according to the present embodiment has a base substrate 22 as a base material, and various members are formed on both surfaces of the base substrate 22.

The base substrate 22 is a semiconductor wafer 25.
It is composed of a material having a relatively close (or the same) coefficient of thermal expansion, such as silicon, glass, or ceramic used as the base material of. This is to prevent the contacts from being separated from each other due to the difference in the thermal expansion coefficient between the semiconductor device 21 and the inspection device 20, and thus even when the electrical inspection of the semiconductor device 21 is performed in a high temperature environment (wafer burn-in). It enables reliable electrical continuity between them. The base substrate 22 used in this embodiment is the semiconductor device 21.
Made of the same single crystal silicon as the material of the plurality of semiconductor devices 2 formed on the semiconductor wafer 25.
It is set to a size corresponding to 1. Then, by pressing the semiconductor inspection device 20 against the semiconductor wafer 25,
A plurality of semiconductor devices can be inspected at the same time (see FIG. 2).

In this embodiment, silicon, glass, ceramics, or the like is used as the material of the base substrate 22, but the material is not limited to this, and for example, the material of the base substrate 22 is highly versatile. Glass epoxy resin or the like may be applied. Since the glass epoxy resin is often used as a substrate material, a general-purpose manufacturing process can be applied, and the wiring layer 28 can be easily formed on the surface of the base substrate 22.
Can be formed.

By the way, a plurality of through holes 26 are formed on the surface of the base substrate 22 so as to correspond to the positions of the electrodes 24 of the semiconductor device 21, and further the inner wall surface of the through holes 26 and the upper surface of the base substrate 22. An insulating film (not shown) is formed on the surface to prevent a short circuit between a wiring layer described later and the base substrate 22.

A wiring layer 28 is formed on the upper surface of the base substrate 22. One end of the wiring layer 28 approaches the opening edge of the through hole 26, and the other end extends to the end of the base substrate 22 and is connected to an external device via a connector (not shown). It is connected. A plated layer 29 is formed inside the through hole 26. By connecting the plated layer 29 and the wiring layer 28 to the connector side of the wiring layer 28,
The conductive rubber member 32, which will be described later, is electrically connected.

Further, a guide plate 30 for holding the base substrate 22 is attached to the upper surface of the base substrate 22, and the base substrate 22 is brought into contact with or separated from the semiconductor device 21, or the contact or separation is made. At this time, the base substrate 22 is prevented from being bent. The guide plate 30 has a gap so that the rear end of the contact needle does not come into contact with it even if the contact needle described later moves up and down.

Inside the through hole 26, a conductive rubber member 32 which is an elastic body is provided. The conductive rubber member 32 is made of a rubber member (for example, silicon rubber or the like) in which silver serving as a conductive member is mixed, maintains conductivity with the wiring layer 28, and is deformable by an external force.

A contact needle 34 penetrates through the conductive rubber member 32. The contact needle 34 is obtained by cutting a bonding wire for bump connection in a bare chip into a certain length, and is held so that the front end and the rear end of the contact needle 34 project from both surface sides of the base substrate 22. . A plurality of semiconductor devices 2 formed on a semiconductor wafer 25 using such a semiconductor inspection device 20.
The procedure of performing the inspection will be described in 1.

FIG. 2 is a state diagram showing a positional relationship between a vertically movable guide plate to which the semiconductor inspection device is attached and a semiconductor wafer installed below the guide plate.
FIG. 7 is an enlarged view of a main part when a contact needle of the semiconductor inspection device is brought into contact with an electrode of the semiconductor device. As shown in these drawings, when inspecting the semiconductor device 21, the semiconductor wafer 25 is first mounted on an XY table (not shown) installed below the guide plate 30. After mounting the semiconductor wafer 25 on the XY table, the XY table is moved to move the electrodes 24 of the semiconductor device 21 to be inspected.
And the contact needle 34 of the semiconductor inspection device 20 are aligned. After the horizontal positioning of the electrode 24 and the contact needle 34 is completed, the guide plate 30 is operated and the semiconductor inspection device 20 is lowered.

By the way, as shown in FIG. 3A, the electrodes 24 of the semiconductor device 21 may vary in the height direction between the electrodes 24 (see dimension A in the figure). Therefore, even if the semiconductor inspection device 20 is lowered as it is, there is a possibility that the electrode 24 and the contact needle 34 do not come into contact with each other due to the variation in the height direction, but as shown in FIG. Through hole 26
A conductive rubber member 32 is provided inside. Therefore, when the semiconductor inspection device 20 is pressed against the semiconductor wafer 25 with a constant load, the conductive rubber member 32 at a portion where the electrode 24 and the contact needle 34 are already in close contact with each other is deformed. Contact with the contact needle 34. As described above, by providing the conductive rubber member 32 inside the through hole 26 and absorbing the step in the height direction of the electrode 24 and the contact needle 34 by the deformation of the conductive rubber member 32, a plurality of different height directions can be obtained. Even if the electrode 24 of FIG. Further, since the absorption in the height direction is entirely performed by the conductive rubber member 32, the contact needle 34 can have a certain hardness or more, and the wear resistance can be improved. Therefore, the life of the semiconductor inspection device 20 can be extended.

The semiconductor wafer 2 of the semiconductor inspection device 20
The contact force of the contact needle 34 with respect to all the electrodes 24 to be inspected is so as to break the oxide film of the electrodes 24, and the contact resistance value required to inspect the electrical characteristics of the semiconductor device 21 Should be set so that at least The inspection environment may be a high temperature (100 ° C.) environment for the purpose of facilitating detection of defects, but as described above, the base substrate 22 is made of the same material as the semiconductor wafer 25. Therefore, the coefficient of thermal expansion is the same, and the pitch between the electrodes 24 and the pitch between the contact needles 34 do not change. Therefore, the electrode 24 and the contact needle 34 can be surely brought into contact with each other even in an environment of normal temperature or high temperature, and electrical conduction can be achieved.

After electrically connecting the electrode 24 and the contact needle 34 in this manner, the degree of the current flowing through the contact needle 34 is detected by an external device via the connector, and the current value outside the specified range is detected. If so, the semiconductor device 21 including the contact needle 34 indicating an abnormality may be regarded as a defective product and recorded on the external device side, and after the inspection is completed, the guide plate 30 is raised. Then, the semiconductor inspection device 20 is moved away from the semiconductor wafer 25, and the XY stage is moved to inspect the new semiconductor device 21.

A method of manufacturing the above-described semiconductor inspection device 20 will be described below. FIG. 4 is a manufacturing process diagram showing the manufacturing process of the semiconductor inspection device according to the present embodiment. As shown in FIG. 1A, the semiconductor inspection apparatus 20 according to the present embodiment uses a base substrate 22 made of single crystal silicon, which is the same material as the semiconductor wafer 25, as a base material. A wiring layer 28 is formed on the surface of one side of the base substrate 22, and a plating layer 29 is formed on the upper layer and the inner wall surface of the through hole 26. The non-plated layer 29 may be obtained by immersing the base substrate 29 in a plating solution, forming a thin plated layer by electroless plating, and then increasing the thickness of the plated layer 29 by electrolytic plating.

After electrical conduction between the inner wall surface of the through hole 26 and the wiring layer 28 is established by the plating layer 29, a paste-like conductive rubber member 32 is formed as shown in FIG. Non-metallic squeegee 36 (base substrate 2
2 to prevent damage to the through hole 26). After the conductive rubber member 32 is embedded in the through hole 26 as described above, the capillary 38 used for wire bonding is attached to the through hole 26 as shown in FIG.
And the bonding wire protruding from the tip of the capillary 38 is inserted into the conductive rubber member 32.

Then, after the bonding wire protruding from the tip of the capillary 38 is inserted into the conductive rubber member 32 and the capillary 38 is lowered by a certain amount, the bonding wire is cut on the side of the capillary 38 to form the conductive rubber member 32. It suffices to keep the bonding wire penetrating. In this way, the bonding wire is connected to the conductive rubber member 32.
When the conductive rubber member 32 is hardened by heating or the like after being penetrated through, the contact needle 34 held by the conductive rubber member 32 can be formed.

FIG. 5 is a sectional structural view showing an application example of the semiconductor inspection device according to the present embodiment. Since the semiconductor inspection apparatus is a mode in which a specific member is simply added to the semiconductor inspection apparatus according to the present embodiment, the same numbers are given to the same members and the description will be given.

As shown in the figure, a deformable support member 40 may be arranged on the rear end side of the contact needle 34, and the vertical movement of the contact needle 34 may be adjusted by the deformation of the support member 40. . Thus, by using the support member 40 in addition to the conductive rubber member 32, it is possible to set a wide resistance force in the vertical movement of the contact needle 34, and it is possible to apply to various semiconductor devices. The support member 4
As 0, for example, a silicon-based rubber or the like whose hardness can be suppressed even if the temperature changes can be used.

FIG. 6 is a sectional structural view showing a modification of the semiconductor inspection device according to this embodiment. Further, also in the semiconductor inspection device, as in the semiconductor inspection device according to the present embodiment, since the contact needle is held by the elastic body, the same number is given to the same member, and the description will be given. And

In the figure, a wiring layer is connected to the rear end of the contact needle 34, and the wiring layer is used to make contact with an external device. That is, the wiring layer is based on the film 42 made of polyimide, and is formed by the wiring pattern 44 formed on the surface of the film 42. The wiring pattern 44 may be formed by previously adhering a copper foil to the surface of the film 42 and etching the copper foil so as to form the predetermined wiring pattern 44.

In the wiring layer, the film 42
The wiring patterns 44 can be formed on both surfaces of the contact needle 34, and thus various inspection signals can be transmitted to the contact needle 34.

Also in this modification, the contact needle 3
The support member 40 (see the broken line in the figure) is arranged at the rear end of 4,
It is possible to set a wide resistance force in the vertical movement of the contact needle 34.

[0042]

As described above, according to the present invention, there is provided a method of manufacturing a semiconductor inspection device for electrically inspecting the semiconductor device by bringing a contact needle into contact with an electrode formed on the surface of the semiconductor device. A through hole is formed in the base substrate that is pressed against the semiconductor device, and a wiring layer that transmits a test signal is formed from the inner wall surface of the through hole to the upper layer side of the base substrate. After forming an elastic body made of a conductive member, the contact needle is pierced through the elastic body so that the contact needle is held by the elastic body,

A method of manufacturing a semiconductor inspection device for electrically inspecting a semiconductor device by bringing a contact needle into contact with an electrode formed on the surface of the semiconductor device, wherein the base substrate is pressed against the semiconductor device. After forming a hole and forming an elastic body in the through hole, the contact needle is pierced through the elastic body, the contact needle is held by the elastic body, and a wiring layer is formed at the rear end of the contact needle. To connect,

Alternatively, there is provided a semiconductor inspecting device which contacts an electrode formed on the surface of the semiconductor device and electrically inspects the semiconductor device, wherein a base substrate having through holes corresponding to the positions of the electrodes is provided. An elastic body filled in the through hole and made of a conductive member, a contact needle penetrating the elastic body and held by the elastic body, and an inspection from the inner wall surface of the through hole to the upper layer side of the base substrate Or to have a wiring layer that transmits the signal for

Further, there is provided a semiconductor inspecting device, which is in contact with an electrode formed on the surface of the semiconductor device and electrically inspects the semiconductor device, wherein a base substrate having a through hole corresponding to the position of the electrode. An elastic body filled in the through hole, a contact needle penetrating the elastic body and held by the elastic body, and a wiring layer connected to a rear end side of the contact needle and transmitting an inspection signal Therefore, even if the number of inspection electrodes is increased, it is possible to easily cope with the increase and the manufacturing can be easily performed.

Since the contact needle and the elastic body are combined in a pair, even if the variation in the height direction of the adjacent electrodes becomes large, the variation in the height direction is absorbed by each elastic body without being influenced by this variation. can do.

[Brief description of drawings]

FIG. 1 is a cross-sectional structure diagram of a semiconductor measuring device according to an embodiment.

FIG. 2 is a state diagram showing a positional relationship between a vertically movable guide plate to which a semiconductor inspection device is attached and a semiconductor wafer installed below the guide plate.

FIG. 3 is an enlarged view of a main part when a contact needle of the semiconductor inspection device is brought into contact with an electrode of the semiconductor device.

FIG. 4 is a manufacturing process diagram showing a manufacturing process of the semiconductor inspection device according to the present embodiment.

FIG. 5 is a sectional structural view showing an application example of the semiconductor inspection device according to the present embodiment.

FIG. 6 is a sectional structural view showing a modified example of the semiconductor inspection device according to the present embodiment.

FIG. 7 is an explanatory diagram showing a structure of a conventional first semiconductor inspection device.

FIG. 8 is a sectional view showing a structure of a conventional second semiconductor inspection device.

FIG. 9 is an explanatory diagram showing an appearance of a contact of a conventional third semiconductor inspection device.

[Explanation of symbols]

1 ... Semiconductor inspection equipment 2 ... Holder 3 ... Contact pin 4 ... Semiconductor device 5 ... electrode 6 ... Semiconductor inspection equipment 7 ... Base substrate 8 ... Wiring layer 9 ... Conductive rubber 10 ………… Inspection bump 11 ... Insulation film 12 ... Semiconductor inspection equipment 13 ... Bending part 14 ... Contactor 15 ... Semiconductor device 16 ... Electrode 20 ... Semiconductor inspection equipment 21 ……… Semiconductor device 22 ... Base substrate 24 ......... Electrodes 25 ……… Semiconductor wafer 26 ... through hole 28 ………… Wiring layer 30 ......... Guide plate 32 ......... Conductive rubber member 34 ... Contact needle 36 ......... Squeegee 38 ......... Capillary 40 ......... Supporting member 42 ......... Film 44 ... Wiring pattern

Claims (8)

[Claims] 1. A method of manufacturing a semiconductor inspection device in which a contact needle is brought into contact with an electrode formed on the surface of the semiconductor device to electrically inspect the semiconductor device, the base substrate being pressed against the semiconductor device. After forming a through hole and a wiring layer for transmitting a test signal from the inner wall surface of the through hole to the upper layer side of the base substrate, and after forming an elastic body made of a conductive member in the through hole, A method of manufacturing a semiconductor inspection device, wherein the contact needle is penetrated through the elastic body, and the contact needle is held by the elastic body. 2. A method of manufacturing a semiconductor inspection device for electrically inspecting the semiconductor device by bringing a contact needle into contact with an electrode formed on the surface of the semiconductor device, the base substrate being pressed against the semiconductor device. After forming a through-hole in the through-hole and forming an elastic body in the through-hole, the contact needle is penetrated through the elastic body, the contact needle is held by the elastic body, and wiring is provided at the rear end of the contact needle. A method of manufacturing a semiconductor inspection device, wherein layers are connected. 3. The method for manufacturing a semiconductor inspection device according to claim 1, wherein a conductive rubber member is filled in the through hole with a squeegee and then the contact needle is passed through the conductive rubber member. . 4. The bonding wire is pierced through the elastic body by raising and lowering a capillary, and the bonding wire penetrated by the elastic body is used as the contact needle. Manufacturing method of semiconductor inspection device. 5. A semiconductor inspecting device for contacting an electrode formed on a surface of a semiconductor device to electrically inspect the semiconductor device, wherein a through hole is formed corresponding to a position of the electrode. An elastic body filled in the through hole and made of a conductive member; a contact needle penetrating the elastic body and held by the elastic body; and an inner wall surface of the through hole extending to the upper layer side of the base substrate. A semiconductor inspection apparatus having a wiring layer for transmitting an inspection signal. 6. A semiconductor inspection device for contacting an electrode formed on a surface of a semiconductor device to electrically inspect the semiconductor device, the base substrate having a through hole corresponding to a position of the electrode. An elastic body filled in the through hole, a contact needle penetrating the elastic body and held by the elastic body, and a wiring connected to the rear end side of the contact needle and transmitting an inspection signal A semiconductor inspection device having a layer. 7. A deformable support member for holding the contact needle is provided on the rear end side of the contact needle, and the movement amount of the contact needle is adjusted by the deformation of the support member. The semiconductor inspection apparatus according to claim 5 or 6. 8. The semiconductor inspection apparatus according to claim 5, wherein the elastic body is made of a conductive rubber member.