JP2003051197A5 - - Google Patents

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Publication number
JP2003051197A5
JP2003051197A5 JP2001238404A JP2001238404A JP2003051197A5 JP 2003051197 A5 JP2003051197 A5 JP 2003051197A5 JP 2001238404 A JP2001238404 A JP 2001238404A JP 2001238404 A JP2001238404 A JP 2001238404A JP 2003051197 A5 JP2003051197 A5 JP 2003051197A5
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JP
Japan
Prior art keywords
memory
memory blocks
storage device
word line
semiconductor storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2001238404A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003051197A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001238404A priority Critical patent/JP2003051197A/ja
Priority claimed from JP2001238404A external-priority patent/JP2003051197A/ja
Publication of JP2003051197A publication Critical patent/JP2003051197A/ja
Publication of JP2003051197A5 publication Critical patent/JP2003051197A5/ja
Ceased legal-status Critical Current

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JP2001238404A 2001-08-06 2001-08-06 半導体記憶装置 Ceased JP2003051197A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001238404A JP2003051197A (ja) 2001-08-06 2001-08-06 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001238404A JP2003051197A (ja) 2001-08-06 2001-08-06 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003051197A JP2003051197A (ja) 2003-02-21
JP2003051197A5 true JP2003051197A5 (https=) 2008-07-31

Family

ID=19069322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001238404A Ceased JP2003051197A (ja) 2001-08-06 2001-08-06 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP2003051197A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100706226B1 (ko) * 2003-06-19 2007-04-11 삼성전자주식회사 어드레스 제어를 이용한 8배속/16배속 동작이 가능한비휘발성 반도체 메모리 장치
JP2009176375A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 不揮発性半導体記憶装置
US8243532B2 (en) * 2010-02-09 2012-08-14 Infineon Technologies Ag NVM overlapping write method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134390A (en) * 1980-03-21 1981-10-21 Fujitsu Ltd Rom element
JPS6014440B2 (ja) * 1980-10-15 1985-04-13 株式会社東芝 不揮発性半導体メモリ−
JPS5998393A (ja) * 1982-11-26 1984-06-06 Nec Corp プログラマブルメモリ
JPS59129998A (ja) * 1983-01-17 1984-07-26 Toshiba Corp Ｒｏｍを内蔵した半導体集積回路
JPH02116084A (ja) * 1988-10-25 1990-04-27 Nec Corp 半導体記憶装置
JP2635810B2 (ja) * 1990-09-28 1997-07-30 株式会社東芝 半導体記憶装置
JP2845187B2 (ja) * 1995-12-21 1999-01-13 日本電気株式会社 半導体記憶装置
JP2000215684A (ja) * 2000-01-01 2000-08-04 Hitachi Ltd 半導体記憶装置

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