JP2003037064A5 - - Google Patents
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- Publication number
- JP2003037064A5 JP2003037064A5 JP2002142264A JP2002142264A JP2003037064A5 JP 2003037064 A5 JP2003037064 A5 JP 2003037064A5 JP 2002142264 A JP2002142264 A JP 2002142264A JP 2002142264 A JP2002142264 A JP 2002142264A JP 2003037064 A5 JP2003037064 A5 JP 2003037064A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- crystalline semiconductor
- film
- crystalline
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 81
- 238000004519 manufacturing process Methods 0.000 claims 22
- 238000000034 method Methods 0.000 claims 15
- 230000003647 oxidation Effects 0.000 claims 13
- 238000007254 oxidation reaction Methods 0.000 claims 13
- 230000001678 irradiating effect Effects 0.000 claims 12
- 239000000126 substance Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 9
- 239000002184 metal Substances 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 6
- 239000011261 inert gas Substances 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 4
- 230000001590 oxidative effect Effects 0.000 claims 4
- 230000000694 effects Effects 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052795 boron group element Inorganic materials 0.000 claims 1
- 229910052800 carbon group element Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052696 pnictogen Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002142264A JP4522642B2 (ja) | 2001-05-18 | 2002-05-17 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-148635 | 2001-05-18 | ||
| JP2001148635 | 2001-05-18 | ||
| JP2002142264A JP4522642B2 (ja) | 2001-05-18 | 2002-05-17 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003037064A JP2003037064A (ja) | 2003-02-07 |
| JP2003037064A5 true JP2003037064A5 (enrdf_load_stackoverflow) | 2005-09-22 |
| JP4522642B2 JP4522642B2 (ja) | 2010-08-11 |
Family
ID=26615307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002142264A Expired - Fee Related JP4522642B2 (ja) | 2001-05-18 | 2002-05-17 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4522642B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4522904B2 (ja) * | 2004-04-19 | 2010-08-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2006066908A (ja) * | 2004-07-30 | 2006-03-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US7799658B2 (en) * | 2007-10-10 | 2010-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device |
| JP2009135430A (ja) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US7851318B2 (en) * | 2007-11-01 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3562590B2 (ja) * | 1993-12-01 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
| JP2873669B2 (ja) * | 1993-12-24 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP4001662B2 (ja) * | 1997-06-27 | 2007-10-31 | 株式会社半導体エネルギー研究所 | シリコンの洗浄方法および多結晶シリコンの作製方法 |
| JP4101409B2 (ja) * | 1999-08-19 | 2008-06-18 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2001094110A (ja) * | 1999-09-22 | 2001-04-06 | Toshiba Corp | 薄膜トランジスタ装置、薄膜トランジスタ装置の製造方法、液晶表示装置及び、液晶表示装置用アクティブマトリクス基板の製造方法 |
| JP4045731B2 (ja) * | 2000-09-25 | 2008-02-13 | 株式会社日立製作所 | 薄膜半導体素子の製造方法 |
| JP2002141510A (ja) * | 2000-11-01 | 2002-05-17 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、アレイ基板、液晶表示装置、有機ｅｌ表示装置およびその製造方法 |
-
2002
- 2002-05-17 JP JP2002142264A patent/JP4522642B2/ja not_active Expired - Fee Related
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