JP2003031764A - Power semiconductor device - Google Patents
Power semiconductor deviceInfo
- Publication number
- JP2003031764A JP2003031764A JP2001210636A JP2001210636A JP2003031764A JP 2003031764 A JP2003031764 A JP 2003031764A JP 2001210636 A JP2001210636 A JP 2001210636A JP 2001210636 A JP2001210636 A JP 2001210636A JP 2003031764 A JP2003031764 A JP 2003031764A
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- semiconductor device
- control
- power semiconductor
- case
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Dc-Dc Converters (AREA)
- Structure Of Printed Boards (AREA)
- Inverter Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電力用スイッチン
グ半導体素子を収納した絶縁性の筒状のケースの開口端
に前記電力用スイッチング半導体素子を制御する制御基
板を固着する電力用半導体装置の改良に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a power semiconductor device in which a control board for controlling the power switching semiconductor element is fixed to the opening end of an insulating cylindrical case accommodating the power switching semiconductor element. It is about.
【０００２】[0002]
【従来の技術】従来のこの種の電力用半導体装置を図２
に基づき説明する。なお、図２は従来の電力用半導体装
置の部分縦断面図である。2. Description of the Related Art A conventional power semiconductor device of this type is shown in FIG.
It will be explained based on. 2 is a partial vertical cross-sectional view of a conventional power semiconductor device.
【０００３】図２において、１は表主面１ａと裏主面１
ｂとを有する金属ベース板、２は金属ベース板上に配設
された電力用絶縁基板で、セラミック基板２ａと、該セ
ラミック基板２ａの表主面に形成された主回路パターン
２ｂと、セラミック基板２ａの裏主面に形成された金属
製の裏面パターン２ｃとで構成され、該裏面パターン２
ｃが表主面１ａに半田（図示せず）にて半田付けされて
なるものである。３ａおよび３ｂは主回路パターン２ｂ
上に半田（図示せず）にて半田付けされた電力用半導体
素子で、具体的には電力用スイッチング半導体素子とし
てのＩＧＢＴと、該ＩＧＢＴと逆並列に接続されたフラ
イホイールダイオードとからなるものである。４は絶縁
基板２や電力用半導体素子３ａ、３ｂを囲繞するよう
に、その一端４ａが表主面１ａ上に固着されると共に、
他端４ｂに開口を有し筒状をなす樹脂製のケース、５は
電力用半導体素子３ａ、３ｂに対する入力用主端子でケ
ース４にインサートされ、その一端５ａがケース４内の
一端４ａ近傍に露出し、他端５ｂが他端４ｂに露出して
なるものである。６は電力用半導体素子３ａ、３ｂに接
続される出力用主端子でケース４にインサートされ、そ
の一端６ａがケース４内の一端４ａ近傍に露出し、他端
６ｂが他端４ｂに露出してなるものである。７は制御端
子でケース４にインサートされ、その一端７ａがケース
４内の一端４ａ近傍に露出し、他端７ｂが他端４ｂに露
出してなるものである。８は電力用半導体素子３ａ、３
ｂを一端５ａ、一端６ａ、一端７ａに適宜接続するアル
ミ製のボンディングワイヤ、９は電力用半導体素子３
ａ、３ｂやボンディングワイヤ８を封止するためケース
４内に充填された封止樹脂、１０はケース４の他端４ｂ
に固着された制御基板で、基板本体１０ａと、基板本体
１０ａの表主面に形成された回路パターン（図示せず）
に実装された制御ＩＣ等からなる制御部品１０ｂとで構
成されてなるものである。In FIG. 2, reference numeral 1 is a front main surface 1a and a back main surface 1
2 is a metal base plate having b and 2 is an insulating substrate for electric power disposed on the metal base plate, and includes a ceramic substrate 2a, a main circuit pattern 2b formed on the front main surface of the ceramic substrate 2a, and a ceramic substrate. 2a and a metal back surface pattern 2c formed on the back main surface of the back surface 2a.
c is soldered to the front main surface 1a with solder (not shown). 3a and 3b are main circuit patterns 2b
A power semiconductor element soldered on the above with a solder (not shown), specifically, an IGBT as a power switching semiconductor element, and a flywheel diode connected in antiparallel with the IGBT. Is. An end 4a is fixed to the front main surface 1a so as to surround the insulating substrate 2 and the power semiconductor elements 3a and 3b.
A cylindrical resin case 5 having an opening at the other end 4b is a main input terminal for the power semiconductor elements 3a and 3b, and is inserted into the case 4, and one end 5a thereof is located near the one end 4a in the case 4. The other end 5b is exposed and the other end 4b is exposed. Reference numeral 6 denotes an output main terminal connected to the power semiconductor elements 3a and 3b, which is inserted into the case 4, one end 6a of which is exposed near the one end 4a in the case 4 and the other end 6b of which is exposed at the other end 4b. It will be. A control terminal 7 is inserted into the case 4, one end 7a of which is exposed near the one end 4a in the case 4 and the other end 7b is exposed to the other end 4b. 8 is a power semiconductor element 3a, 3
An aluminum bonding wire for properly connecting b to one end 5a, one end 6a, and one end 7a, and 9 is a power semiconductor element 3
Sealing resin 10 filled in case 4 for sealing a, 3b and bonding wire 8 is the other end 4b of case 4.
The control substrate fixed to the substrate main body 10a, and a circuit pattern (not shown) formed on the front main surface of the substrate main body 10a.
And a control component 10b including a control IC mounted on the.
【０００４】なお、基板本体１０ａの表主面に形成され
た回路パターン（図示せず）に制御端子７の他端７ｂが
半田付けにて接続されており、制御基板１０からの制御
信号によって電力用スイッチング半導体素子３ａがスイ
ッチング動作を行い、該スイッチング動作によって、Ｐ
ＷＭ制御された出力が出力用主端子６を介し負荷に供給
される。The other end 7b of the control terminal 7 is soldered to a circuit pattern (not shown) formed on the front main surface of the substrate body 10a, and power is supplied by a control signal from the control substrate 10. Switching semiconductor element 3a performs a switching operation, and by the switching operation, P
The WM-controlled output is supplied to the load via the output main terminal 6.
【０００５】[0005]
【発明が解決しようとする課題】従来の電力用半導体装
置は、以上のように構成されているので、制御基板に対
する制御部品が制御基板本体の表主面のみであり、制御
部品の数が多くなると基板本体の表主面を広くする必要
があり高価になったり、電力用半導体装置としての平面
寸法が大きくなると言う問題があった。Since the conventional power semiconductor device is configured as described above, the control parts for the control board are only the front main surface of the control board body, and the number of control parts is large. In that case, there is a problem that the front main surface of the substrate main body needs to be widened and the cost becomes high, and the plane size of the power semiconductor device becomes large.
【０００６】本発明は、以上のような従来の実情に鑑み
てなされたもので、平面寸法が小型の電力用半導体装置
を提供することを目的とするものである。The present invention has been made in view of the above conventional circumstances, and an object thereof is to provide a power semiconductor device having a small planar dimension.
【０００７】[0007]
【課題を解決するための手段】この発明に係わる電力用
半導体装置は、電力用スイッチング半導体素子を収納し
た絶縁性の筒状のケースの開口端に、表主面の寸法が前
記ケースの平面寸法より大で、前記電力用スイッチング
半導体素子を制御する制御用部品を前記表主面に実装し
た制御基板を固着する電力用半導体装置において、前記
制御基板の裏主面にも前記制御用部品を実装すると共
に、前記ケースの開口部に開口空間部を形成し、該開口
空間部に前記制御用部品の一部を配設したものである。According to another aspect of the present invention, there is provided a power semiconductor device in which a front main surface has a plane dimension at the opening end of an insulating cylindrical case accommodating a power switching semiconductor element. In a power semiconductor device having a larger size, a control board for mounting the control parts for controlling the power switching semiconductor element mounted on the front main surface, and a control board fixed, the control parts are also mounted on the back main surface of the control board. In addition, an opening space is formed in the opening of the case, and a part of the control component is arranged in the opening space.
【０００８】また、制御基板の裏主面の前記ケースの外
側領域にも制御部品を実装したものである。Further, the control component is mounted also on the outer main region of the back main surface of the control board.
【０００９】[0009]
【発明の実施の形態】実施の形態１．この発明の実施の
形態１を図１に基づき説明する。図において１１はケー
ス４の他端４ｂ側の開口部に形成された開口空間部で、
該開口空間部１１に基板本体１０ａの裏主面に実装した
制御部品１０ｂを配設すると共に、基板本体１０ａの裏
主面のケース４の外側領域にも制御部品１０ｂを配設し
てなるものである。BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1. Embodiment 1 of the present invention will be described with reference to FIG. In the figure, 11 is an opening space formed in the opening on the other end 4b side of the case 4,
A control component 10b mounted on the back main surface of the substrate body 10a is arranged in the opening space 11, and a control component 10b is also arranged on an area outside the case 4 on the back main surface of the substrate body 10a. Is.
【００１０】なお、その他の符号の説明は、図２の符号
の説明と同一のため説明を省略する。The other reference numerals are the same as those of FIG. 2 and will not be described.
【００１１】また、動作も従来のものと同じにつき説明
を省略する。The operation is also the same as the conventional one, and the description thereof is omitted.
【００１２】このように構成された電力用半導体装置に
おいては、制御基板１０の基板本体１０ａの裏主面にも
制御部品１０ｂを実装し、ケース４の開口端部に開口空
間部１１を形成し該開口空間部１１に制御部品１０ｂを
配設したことで、基板本体１０ａに対する制御部品１０
ｂの実装密度が高まる。In the power semiconductor device thus configured, the control component 10b is also mounted on the back main surface of the substrate body 10a of the control substrate 10, and the opening space 11 is formed at the opening end of the case 4. By disposing the control component 10b in the opening space portion 11, the control component 10 for the substrate body 10a is provided.
The packaging density of b is increased.
【００１３】また、基板本体１０ａの裏主面のケース４
の外側領域にも制御部品１０ｂを配設したことで、基板
本体１０ａに対する制御部品１０ｂの実装密度が更に高
まる。The case 4 on the back main surface of the substrate body 10a
By disposing the control component 10b also in the outer region of the board, the mounting density of the control component 10b on the substrate body 10a is further increased.
【００１４】[0014]
【発明の効果】この発明は、以上のように構成されてい
るので、以下に記載されるような効果を奏する。Since the present invention is constituted as described above, it has the following effects.
【００１５】第１の発明によれば、電力用スイッチング
半導体素子を収納した絶縁性の筒状のケースの開口端
に、表主面の寸法が前記ケースの平面寸法より大で、前
記電力用スイッチング半導体素子を制御する制御用部品
を前記表主面に実装した制御基板を固着する電力用半導
体装置において、前記制御基板の裏主面にも前記制御用
部品を実装すると共に、前記ケースの開口部に開口空間
部を形成し、該開口空間部に前記制御用部品の一部を配
設したので、前記制御基板に対する前記制御用部品の実
装密度を従来に比して高めることが出来、従来に比し平
面寸法が小型の電力用半導体装置を提供できる高価があ
る。According to the first aspect of the invention, at the opening end of the insulating cylindrical case accommodating the power switching semiconductor element, the dimension of the front main surface is larger than the plane dimension of the case, and the power switching is performed. In a power semiconductor device in which a control board having a control part for controlling a semiconductor element mounted on the front main surface is fixed, the control part is also mounted on the back main surface of the control board, and the opening of the case is formed. Since the opening space portion is formed in and the part of the control component is disposed in the opening space portion, the mounting density of the control component on the control board can be increased as compared with the conventional one. In comparison, it is expensive to provide a power semiconductor device having a small plane size.
【００１６】また、第２の発明によれば、制御基板の裏
主面の前記ケースの外側領域にも制御部品を実装したの
で、制御基板に対する前記制御用部品の実装密度を更に
高めることが出来、平面寸法が極めて小型の電力用半導
体装置を提供できる高価がある。Further, according to the second aspect of the invention, since the control component is also mounted on the outer main region of the back main surface of the control substrate, the mounting density of the control component on the control substrate can be further increased. However, it is expensive to provide a power semiconductor device having a very small planar size.
【図１】 本発明の実施の形態１を示す縦断面図であ
る。FIG. 1 is a vertical sectional view showing a first embodiment of the present invention.
【図２】 従来の電力用半導体装置を示す縦断面図であ
る。FIG. 2 is a vertical sectional view showing a conventional power semiconductor device.
４ ケース、１０ 制御基板、１０ｂ 制御部品、１１
開口空間部4 cases, 10 control boards, 10b control parts, 11
Open space
Claims (2)
た絶縁性の筒状のケースの開口端に、表主面の寸法が前
記ケースの平面寸法より大で、前記電力用スイッチング
半導体素子を制御する制御用部品を前記表主面に実装し
た制御基板を固着する電力用半導体装置において、前記
制御基板の裏主面にも前記制御用部品を実装すると共
に、前記ケースの開口部に開口空間部を形成し、該開口
空間部に前記制御用部品の一部を配設したことを特徴と
する電力用半導体装置。1. A control for controlling the power switching semiconductor element, wherein a dimension of a front main surface is larger than a plane dimension of the case at an opening end of an insulating cylindrical case accommodating the power switching semiconductor element. In a power semiconductor device in which a control board having component parts mounted on the front main surface is fixed, the control component is also mounted on the back main surface of the control board, and an opening space is formed in the opening of the case. The power semiconductor device is characterized in that a part of the control component is provided in the opening space.
域にも制御部品を実装したことを特徴とする請求項１記
載の電力用半導体装置。2. The power semiconductor device according to claim 1, wherein a control component is also mounted on an area outside the case on the back main surface of the control board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001210636A JP4432288B2 (en) | 2001-07-11 | 2001-07-11 | Power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001210636A JP4432288B2 (en) | 2001-07-11 | 2001-07-11 | Power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003031764A true JP2003031764A (en) | 2003-01-31 |
| JP4432288B2 JP4432288B2 (en) | 2010-03-17 |
Family
ID=19046074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001210636A Expired - Lifetime JP4432288B2 (en) | 2001-07-11 | 2001-07-11 | Power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4432288B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007012839A (en) * | 2005-06-30 | 2007-01-18 | Honda Motor Co Ltd | Electric circuit unit |
| JP2010034374A (en) * | 2008-07-30 | 2010-02-12 | Denso Corp | Electronic apparatus |
| US7723846B2 (en) | 2004-09-22 | 2010-05-25 | Fuji Electric Device Technology Co., Ltd. | Power semiconductor module and method of manufacturing the same |
-
2001
- 2001-07-11 JP JP2001210636A patent/JP4432288B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7723846B2 (en) | 2004-09-22 | 2010-05-25 | Fuji Electric Device Technology Co., Ltd. | Power semiconductor module and method of manufacturing the same |
| US8158458B2 (en) | 2004-09-22 | 2012-04-17 | Fuji Electric Co., Ltd. | Power semiconductor module and method of manufacturing the same |
| DE102005040058B4 (en) * | 2004-09-22 | 2019-02-21 | Fuji Electric Co., Ltd. | Power semiconductor module and method for producing the same |
| JP2007012839A (en) * | 2005-06-30 | 2007-01-18 | Honda Motor Co Ltd | Electric circuit unit |
| JP4486556B2 (en) * | 2005-06-30 | 2010-06-23 | 本田技研工業株式会社 | Electric circuit unit |
| JP2010034374A (en) * | 2008-07-30 | 2010-02-12 | Denso Corp | Electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4432288B2 (en) | 2010-03-17 |
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