JP2003030832A5 - - Google Patents

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Publication number
JP2003030832A5
JP2003030832A5 JP2002152757A JP2002152757A JP2003030832A5 JP 2003030832 A5 JP2003030832 A5 JP 2003030832A5 JP 2002152757 A JP2002152757 A JP 2002152757A JP 2002152757 A JP2002152757 A JP 2002152757A JP 2003030832 A5 JP2003030832 A5 JP 2003030832A5
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JP
Japan
Prior art keywords
data storage
electron
light beam
data
activity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002152757A
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English (en)
Japanese (ja)
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JP2003030832A (ja
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Publication date
Priority claimed from US09/865,940 external-priority patent/US6970413B2/en
Application filed filed Critical
Publication of JP2003030832A publication Critical patent/JP2003030832A/ja
Publication of JP2003030832A5 publication Critical patent/JP2003030832A5/ja
Withdrawn legal-status Critical Current

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JP2002152757A 2001-05-25 2002-05-27 指向性光ビームおよび近接場光源を用いるデータ記憶媒体 Withdrawn JP2003030832A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/865940 2001-05-25
US09/865,940 US6970413B2 (en) 2001-05-25 2001-05-25 Data storage medium utilizing directed light beam and near-field optical sources

Publications (2)

Publication Number Publication Date
JP2003030832A JP2003030832A (ja) 2003-01-31
JP2003030832A5 true JP2003030832A5 (enExample) 2005-10-06

Family

ID=25346568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002152757A Withdrawn JP2003030832A (ja) 2001-05-25 2002-05-27 指向性光ビームおよび近接場光源を用いるデータ記憶媒体

Country Status (4)

Country Link
US (1) US6970413B2 (enExample)
EP (1) EP1260975A3 (enExample)
JP (1) JP2003030832A (enExample)
CN (1) CN1263002C (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
US7106622B2 (en) * 2002-01-09 2006-09-12 Intel Corporation Phase-change memory device capable of preprogramming memory cells optically and reading/writing memory cells electrically
US7027380B2 (en) * 2002-05-02 2006-04-11 Hewlett-Packard Development Company, L.P. Atomic resolution storage device
US7519373B2 (en) * 2002-08-29 2009-04-14 Andrew Llc System and method for geo-location of mobile appliances using diverse standard tasking and reporting
CN100347760C (zh) * 2003-02-27 2007-11-07 皇家飞利浦电子股份有限公司 多叠层卷起式信息载体
NL1022855C2 (nl) * 2003-03-05 2004-09-07 Univ Delft Tech Werkwijze en inrichting voor het gecontroleerd vervaardigen van openingen op nanometerschaal.
EP1610318A4 (en) * 2003-03-28 2007-11-28 Fujitsu Ltd LCIHT RADIATION HEAD AND INFORMATION STORAGE
US7239599B2 (en) 2003-03-28 2007-07-03 Fujitsu Limited Light irradiation head and information storage apparatus
US20040218499A1 (en) * 2003-05-01 2004-11-04 Alison Chaiken Ultra-high density storage and retrieval device using ordered-defect materials and methods of fabrication thereof
US6804137B1 (en) * 2003-06-12 2004-10-12 Hewlett-Packard Development Company, L.P. Data storage medium having layers acting as transistor
US6979838B2 (en) * 2003-09-03 2005-12-27 Hewlett-Packard Development Company, L.P. Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof
US7057202B2 (en) * 2003-09-26 2006-06-06 Hewlett-Packard Development Company, L.P. Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof
US7616551B2 (en) * 2003-11-25 2009-11-10 Samsung Electronics Co., Ltd. Molecular optoelectronic memory device
US7596072B2 (en) * 2004-12-22 2009-09-29 Seagate Technology Llc Optical recording using a waveguide structure and a phase change medium
US20060233091A1 (en) * 2005-04-01 2006-10-19 Schut David M Storage device having storage cells having a size less than a write light wavelength
US8339905B2 (en) * 2005-04-13 2012-12-25 Seagate Technology Llc Alignment features for heat assisted magnetic recording transducers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213192A (en) * 1979-01-15 1980-07-15 Christensen Alton O Sr Electron beam accessed read-write-erase random access memory
ATE139051T1 (de) * 1988-10-04 1996-06-15 Canon Kk Gerät und verfahren zur aufzeichnung und wiedergabe und aufzeichnungsmedium für das aufzeichungs- und wiedergabeverfahren
US5270995A (en) * 1989-01-13 1993-12-14 Sharp Kabushiki Kaisha Method for recording and reproducing information by varying a work function of a recording medium and device for the same
US5675532A (en) * 1994-07-28 1997-10-07 Kabushiki Kaisha Toshiba Recording medium and recording/reproduction method
US5615143A (en) * 1994-09-19 1997-03-25 Cornell Research Foundation, Inc. Optomechanical terabit data storage system
US5557596A (en) * 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US5808973A (en) * 1995-09-06 1998-09-15 Kabushiki Kaisha Toshiba Near field recording and reproducing apparatus
JP3618896B2 (ja) * 1996-03-29 2005-02-09 キヤノン株式会社 微小開口を有するプローブの作製法とそれによるプローブ、並びに該プローブを用いた走査型近接場光顕微鏡と走査型トンネル顕微鏡との複合装置、および該プローブを用いた記録再生装置
JP3697034B2 (ja) * 1997-08-26 2005-09-21 キヤノン株式会社 微小開口を有する突起の製造方法、及びそれらによるプローブまたはマルチプローブ
JPH11166935A (ja) * 1997-09-25 1999-06-22 Canon Inc 光検出または照射用の光プローブと該プローブを備えた近視野光学顕微鏡、及該光プローブの製造方法とその製造に用いる基板
JP3519623B2 (ja) * 1998-03-13 2004-04-19 株式会社東芝 記録媒体およびその製造方法
US6185051B1 (en) * 1999-06-23 2001-02-06 Read-Rite Corporation High numerical aperture optical focusing device for use in data storage systems
JP3688530B2 (ja) * 1999-09-29 2005-08-31 株式会社東芝 記録媒体、記録装置および記録方法
US6473388B1 (en) * 2000-08-31 2002-10-29 Hewlett Packard Company Ultra-high density information storage device based on modulated cathodoconductivity
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device

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