JP2003023100A5 - - Google Patents
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- Publication number
- JP2003023100A5 JP2003023100A5 JP2001209541A JP2001209541A JP2003023100A5 JP 2003023100 A5 JP2003023100 A5 JP 2003023100A5 JP 2001209541 A JP2001209541 A JP 2001209541A JP 2001209541 A JP2001209541 A JP 2001209541A JP 2003023100 A5 JP2003023100 A5 JP 2003023100A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- region
- film
- manufacturing
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 27
- 238000004519 manufacturing process Methods 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 13
- 239000000463 material Substances 0.000 claims 10
- 239000003870 refractory metal Substances 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001209541A JP3749837B2 (ja) | 2001-07-10 | 2001-07-10 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001209541A JP3749837B2 (ja) | 2001-07-10 | 2001-07-10 | 半導体集積回路装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003023100A JP2003023100A (ja) | 2003-01-24 |
| JP2003023100A5 true JP2003023100A5 (https=) | 2005-06-23 |
| JP3749837B2 JP3749837B2 (ja) | 2006-03-01 |
Family
ID=19045179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001209541A Expired - Fee Related JP3749837B2 (ja) | 2001-07-10 | 2001-07-10 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3749837B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7087476B2 (en) * | 2004-07-28 | 2006-08-08 | Intel Corporation | Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit |
| JP4588483B2 (ja) * | 2005-02-21 | 2010-12-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2001
- 2001-07-10 JP JP2001209541A patent/JP3749837B2/ja not_active Expired - Fee Related
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