JP2003008082A - 発光ダイオード及びその形成方法 - Google Patents

発光ダイオード及びその形成方法

Info

Publication number
JP2003008082A
JP2003008082A JP2002137637A JP2002137637A JP2003008082A JP 2003008082 A JP2003008082 A JP 2003008082A JP 2002137637 A JP2002137637 A JP 2002137637A JP 2002137637 A JP2002137637 A JP 2002137637A JP 2003008082 A JP2003008082 A JP 2003008082A
Authority
JP
Japan
Prior art keywords
light emitting
light
fluorescent substance
emitting diode
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002137637A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003008082A5 (enExample
Inventor
Ryoma Suenaga
良馬 末永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2002137637A priority Critical patent/JP2003008082A/ja
Publication of JP2003008082A publication Critical patent/JP2003008082A/ja
Publication of JP2003008082A5 publication Critical patent/JP2003008082A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2002137637A 2002-05-13 2002-05-13 発光ダイオード及びその形成方法 Pending JP2003008082A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002137637A JP2003008082A (ja) 2002-05-13 2002-05-13 発光ダイオード及びその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002137637A JP2003008082A (ja) 2002-05-13 2002-05-13 発光ダイオード及びその形成方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP02554599A Division JP3367096B2 (ja) 1999-02-02 1999-02-02 発光ダイオードの形成方法

Publications (2)

Publication Number Publication Date
JP2003008082A true JP2003008082A (ja) 2003-01-10
JP2003008082A5 JP2003008082A5 (enExample) 2006-02-23

Family

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Family Applications (1)

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JP2002137637A Pending JP2003008082A (ja) 2002-05-13 2002-05-13 発光ダイオード及びその形成方法

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JP (1) JP2003008082A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005103198A1 (ja) * 2004-04-23 2005-11-03 Sumitomo Chemical Company, Limited 蛍光体
JP2006324486A (ja) * 2005-05-19 2006-11-30 Mitsubishi Electric Corp 半導体発光装置
KR100665121B1 (ko) * 2005-02-28 2007-01-09 삼성전기주식회사 파장변환형 발광 다이오드 패키지 제조방법
JP2008270820A (ja) * 2007-04-23 2008-11-06 Samsung Electro Mech Co Ltd 発光装置及びその製造方法
US7651887B2 (en) 2004-09-22 2010-01-26 Dow Corning Toray Company, Ltd. Optical semiconductor device and method of manufacturing thereof
JP2012227500A (ja) * 2011-04-19 2012-11-15 Lingsen Precision Industries Ltd 発光ダイオードのパッケージング構造

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005103198A1 (ja) * 2004-04-23 2005-11-03 Sumitomo Chemical Company, Limited 蛍光体
US7892451B2 (en) 2004-04-23 2011-02-22 Sumitomo Chemical Company, Limited Phosphor
US7651887B2 (en) 2004-09-22 2010-01-26 Dow Corning Toray Company, Ltd. Optical semiconductor device and method of manufacturing thereof
KR100665121B1 (ko) * 2005-02-28 2007-01-09 삼성전기주식회사 파장변환형 발광 다이오드 패키지 제조방법
JP2006324486A (ja) * 2005-05-19 2006-11-30 Mitsubishi Electric Corp 半導体発光装置
JP2008270820A (ja) * 2007-04-23 2008-11-06 Samsung Electro Mech Co Ltd 発光装置及びその製造方法
US8735935B2 (en) 2007-04-23 2014-05-27 Samsung Electronics Co., Ltd Small size light emitting device and manufacturing method of the same
JP2012227500A (ja) * 2011-04-19 2012-11-15 Lingsen Precision Industries Ltd 発光ダイオードのパッケージング構造

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