JP2003007999A5 - - Google Patents

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Publication number
JP2003007999A5
JP2003007999A5 JP2001193386A JP2001193386A JP2003007999A5 JP 2003007999 A5 JP2003007999 A5 JP 2003007999A5 JP 2001193386 A JP2001193386 A JP 2001193386A JP 2001193386 A JP2001193386 A JP 2001193386A JP 2003007999 A5 JP2003007999 A5 JP 2003007999A5
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JP
Japan
Prior art keywords
compound semiconductor
nitride
iii
semiconductor layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001193386A
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English (en)
Japanese (ja)
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JP2003007999A (ja
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Publication date
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Priority to JP2001193386A priority Critical patent/JP2003007999A/ja
Priority claimed from JP2001193386A external-priority patent/JP2003007999A/ja
Publication of JP2003007999A publication Critical patent/JP2003007999A/ja
Publication of JP2003007999A5 publication Critical patent/JP2003007999A5/ja
Pending legal-status Critical Current

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JP2001193386A 2001-06-26 2001-06-26 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法 Pending JP2003007999A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001193386A JP2003007999A (ja) 2001-06-26 2001-06-26 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001193386A JP2003007999A (ja) 2001-06-26 2001-06-26 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003007999A JP2003007999A (ja) 2003-01-10
JP2003007999A5 true JP2003007999A5 (https=) 2008-04-03

Family

ID=19031686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001193386A Pending JP2003007999A (ja) 2001-06-26 2001-06-26 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法

Country Status (1)

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JP (1) JP2003007999A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101161875B1 (ko) 2005-03-21 2012-07-03 엘지전자 주식회사 반도체 레이저 다이오드의 제조 방법
KR101203692B1 (ko) * 2006-02-16 2012-11-21 삼성전자주식회사 펜데오 에피탁시 성장용 기판 및 그 형성 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4255168B2 (ja) * 1998-06-30 2009-04-15 シャープ株式会社 窒化物半導体の製造方法及び発光素子
JP3587081B2 (ja) * 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3678061B2 (ja) * 1999-05-21 2005-08-03 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子

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