JP2003007883A - Package for storing semiconductor element and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reliability by preventing a semiconductor element from malfunctioning due to noise entered by reflection of high frequency signal contents for terminal signals into terminal electrodes of the semiconductor element. SOLUTION: A circuit board 6 is mounted on a shelf portion 2b-B inside of the semiconductor package. On the upper face of the circuit board 6, a line conductor 6 for grounding is provided with its one end electrically connected to the semiconductor element 5 and the other end reaching the circumference part of the upper face, and a high resistant part 8 at the middle. On the lower face of the circuit board 6, a grounding conductor layer 6c is formed. On the side face, a notch 16, which penetrates from the upper face to the lower face and reaches the other end of the line conductor 6b at an opening of the upper face is provided. Moreover, a conductive layer 16b is formed on the inside wall of the notch 16 for electrically connecting the other end of the line conductor 6b and the grounding conductor layer 6c.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element that operates with a high frequency signal.

[0002]

2. Description of the Related Art Conventionally, semiconductor element storage packages (hereinafter referred to as semiconductor packages) used in the field of optical communication or for storing various semiconductor elements using high frequency signals in the microwave band, millimeter wave band, etc. A line conductor is provided as a conductor pattern for electrically grounding the element. Such a semiconductor package is shown in cross section in FIG. In the figure, 21 is a base, 22 is a metal frame, and 26 is a circuit board.

The base 21 is iron (Fe) -nickel (Ni).
-A substantially rectangular plate-like body made of a metal such as cobalt (Co) alloy or copper (Cu) -tungsten (W). The upper main surface thereof has an IC, an LSI, a semiconductor laser (L).
D), the semiconductor element 25 such as a photodiode (PD), and the circuit boards 26-A and 26-B are mounted and fixed. The ground conductor layer 26c- is formed on the lower surfaces of the circuit boards 26-A and 26-B.
A, 26c-B is deposited, silver (Ag) wax, A
The ground conductor layer 26c and the mounting portion 21a are firmly adhered by a brazing material such as g-copper (Cu) brazing or solder.

The semiconductor element 25 includes a first line conductor 26a whose electrodes are attached to a circuit board 26 and a second line conductor 26a.
Bonding wires 27 to the line conductors 26b of
It is electrically connected via a and 27b.

The mounting portion 2 is provided on the outer peripheral portion of the upper main surface of the base 21.
A frame 22 is erected so as to surround 1a,
The frame body 22 is formed with the semiconductor element 25 inside the base body 21.
To form a void for housing The frame 22 is made of a sintered material such as a Fe—Ni—Co alloy or Cu—W like the base 21, and is integrally molded with the base 21, or the base 21 is made of Ag.
It is erected on the outer peripheral portion of the upper main surface of the base body 21 by being brazed through a brazing material such as brazing or Ag-Cu brazing or being joined by a welding method such as a seam welding method.

A through hole 22a into which the coaxial connector 23 is fitted is formed on the side surface of the frame body 22, and the through hole 22a is formed.
The coaxial connector 23 is fitted therein, and a sealing material such as solder is inserted into the gap in the through hole 22a. Thereafter, the sealing material is melted by heating, and the melted sealing material is caused by the capillary phenomenon by the coaxial connector. 23 and the inner surface of the through hole 22 a are filled with the coaxial connector 23 so that the through hole 22 is formed.
It is fitted and joined in a through a sealing material. This coaxial connector 23 has an Fe-Ni-C as a signal line on the central axis portion.
A rod-shaped central conductor 23a made of metal such as o alloy is fixed. The center conductor 23a is electrically connected to the first line conductor 26a of the circuit board 26-A via a conductive adhesive material such as solder. A coaxial cable (not shown) connected to an external electric circuit (not shown) is attached to the coaxial connector 23, so that the semiconductor element 25 housed inside the semiconductor package is inserted into the center conductor 23a of the coaxial connector 23. Is electrically connected to an external electric circuit via.

The second line conductor 26b has a conductor layer 26d provided on the end face of the extension of the second line conductor 26b of the circuit board 26-B, as shown in the enlarged plan view of the main part of FIG. And is electrically connected to the ground conductor layer 26c-B. A high resistance portion 28 is provided on the second line conductor 26b. The high resistance portion 28 converts a termination signal including a high frequency signal component, which flows through the second line conductor 26b and is grounded to the ground conductor layer 26c-B, from electrical energy to thermal energy, and the ground conductor layer 26c. The noise due to the reflection of the termination signal from -B is suppressed and electrically grounded.

Alternatively, instead of providing the conductor layer 26d,
As shown in the enlarged plan view of the main part in FIG. 6, the second line conductor 2
By providing a through hole 26e between the high resistance portion 28 of 6b and the side surface of the circuit board 26 on the side opposite to the side to which the bonding wire 27b is connected, and by providing a conductor layer on the inner surface of the through hole 26e, The line conductor 26b of the ground conductor layer 2
A configuration for electrically connecting to 6c-B has been proposed (see Japanese Patent Laid-Open No. 10-51069).

Finally, the semiconductor element 25 is housed in a container consisting of the base body 21 and the frame body 22, and the lid body 24 is joined to the upper surface of the frame body 22 by a welding method such as a brazing method or a seam weld method. A semiconductor device as a product is obtained by hermetically sealing the inside.

[0010]

However, in the above-mentioned conventional semiconductor package, when the frequency of the terminating signal transmitted through the second line conductor 26b provided on the circuit board 26-B is increased, the second line conductor is increased. It has become difficult to convert the electrical energy of the termination signal into heat energy in the high resistance portion 28 provided in 26b. Therefore, the termination signal transmitted through the second line conductor 26b cannot be reliably grounded, and the termination signal transmitted through the second line conductor 26b causes noise due to reflection from the ground conductor layer 26c-B. However, there is a problem in that the semiconductor element 25 enters the semiconductor element 25 to cause a malfunction in the semiconductor element 25.

In particular, the above problem is caused by the progress of high-speed information processing of semiconductor devices used in the field of optical communication and incorporating various semiconductor elements using high-frequency signals in the microwave band, millimeter wave band, etc. It became more prominent when the signal input to and output from the semiconductor element 25 via the conductor 26a and the second line conductor 26b was in a higher frequency region.

Therefore, the present invention has been completed in view of the above problems, and an object of the present invention is to cause noise due to reflection of a high frequency signal component of a termination signal into a termination electrode of the semiconductor element, thereby causing a malfunction of the semiconductor element. It is to make it reliable by preventing the occurrence of.

[0013]

A semiconductor package according to the present invention includes a base body having a mounting portion for mounting a semiconductor element on an upper main surface and an outer peripheral portion of the upper main surface surrounding the mounting portion. In the package for storing a semiconductor element, which has a frame body having a shelf for mounting a circuit board on an inner surface thereof, the circuit board has one end on the upper surface electrically connected to the semiconductor element. A line conductor for grounding is formed, the other end of which is connected to the edge of the upper surface and a high resistance portion is provided on the way, and a grounding conductor layer is formed on the lower surface,
A cutout portion is formed on the side surface so as to penetrate the upper and lower surfaces and the other end of the line conductor reaches the opening on the upper surface side, and the other end of the line conductor and the ground conductor layer are formed on the inner surface of the cutout portion. Is characterized in that a conductor layer for electrically connecting with is formed.

According to the present invention, a notch portion is formed on the side surface of the circuit board so as to pass through the upper and lower surfaces, and the other end of the line conductor reaches the opening on the upper surface side, and the inner surface of the notch portion of the line conductor is formed. Since the conductor layer that electrically connects the other end and the ground conductor layer is formed, among the termination signals transmitted through the line conductor, those that cannot be converted from electrical energy to thermal energy in the high resistance portion, By radiating toward the frame in the conductor layer formed on the inner surface of the notch, the termination signal can be reliably grounded, and the reflection of the high-frequency signal component of the termination signal at the other end of the line conductor can be prevented. Can be reduced.

In the present invention, preferably, the notch portion is wider than the line conductor.

With the above structure, the present invention radiates the terminating signal toward the frame body in the conductor layer formed on the inner surface of the cutout portion for the terminating signal that cannot be electrically grounded in the high resistance portion. Easier to do. That is, the termination signal can be more reliably grounded by radiating the termination signal that cannot be completely converted from electrical energy to thermal energy in the high resistance portion provided in the line conductor.

Further, in the present invention, preferably, a coplanar ground conductor layer is formed on the upper surface of the circuit board so as to surround the line conductor and is connected to the other end of the line conductor. Is characterized by.

According to the present invention, the area of the ground conductor layer for electrically grounding the terminating signal transmitted through the line conductor at the other end of the line conductor can be increased by the above structure.
The termination signal can be smoothly transmitted from the line conductor to the ground conductor layer, and the reflection of the high frequency signal component of the termination signal at the other end can be effectively reduced. Further, since the same-plane ground conductor layer is provided so as to be substantially parallel to and surround the line conductor, it is possible to short-circuit the high-frequency signal component of the termination signal from the line conductor to the same-plane ground conductor layer through a space. Therefore, the signal for termination can be attenuated in the line conductor and grounded more reliably.
That is, the terminating signal that travels along the line conductor travels toward the other end of the line conductor while being short-circuited to the ground conductor layer on the same plane through the space, and therefore is greatly attenuated toward the other end. Becomes

With this structure, the present invention prevents noise due to reflection from being generated by the high-frequency signal component of the terminating signal transmitted through the line conductor, and prevents the noise from entering the semiconductor element. Can be activated.

A semiconductor device according to the present invention includes the semiconductor element housing package according to the present invention, the circuit board placed on the shelf, and the line of the circuit board placed on the placing section. It is characterized by comprising the semiconductor element electrically connected to one end of a conductor, and a lid body joined to an upper surface of the frame body.

With the above-described structure, the present invention can provide a highly reliable semiconductor device using the semiconductor package of the present invention.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION The semiconductor package of the present invention will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of a semiconductor package of the present invention.
Is a base, 2 is a frame, and 6 is a circuit board.

The frame body 2 of the present invention is a frame-shaped body made of a metal such as Fe-Ni-Co alloy or a sintered material of Cu-W.
Shelf portions 2b-A and 2b-B for mounting the circuit boards 6-A and 6-B are formed on the inner surface of the frame body 2, respectively.
A ground conductor layer 6c- is formed on the lower surface of the circuit boards 6-A and 6-B.
A, 6c-B is deposited, Ag wax, Ag-Cu
Brazing material such as wax, gold (Au) -tin (Sn) solder, lead (P)
b) The ground conductor layer 6c and the shelf portion 2b are firmly adhered to each other by solder such as -Sn solder.

The semiconductor element 5 has bonding electrodes 7a, 6b on the first line conductor 6a and the second line conductor 6b whose electrodes are formed on the upper surface of the circuit board 6, respectively.
It is electrically connected via 7b.

When the circuit board 6 is made of Al ₂ O ₃ ceramics, for example, it is manufactured as follows. First,
Al ₂ O ₃ , silicon oxide (SiO ₂ ), calcium oxide (C
aO), magnesium oxide (MgO), and other raw material powders are added and mixed with an appropriate organic binder, plasticizer, dispersant, solvent, etc. to form a slurry. A ceramic green sheet is obtained by forming this into a sheet by a conventionally known doctor blade method. Then, the ceramic green sheet is punched appropriately, or Al ₂ O ₃ , Si is used.
A raw material powder such as O ₂ , CaO, and MgO is filled in a mold and press-molded to form a predetermined shape. The first line conductor 6 is formed on the upper surface of the ceramic green sheet.
a, the second line conductor 6b for grounding, and the grounding conductor layer 6c
Apply a metal paste by printing and apply it in a reducing atmosphere for approx. 1
It is manufactured by firing at a temperature of 600 ° C.

The first line conductor 6a and the second line conductor 6b
As the metal paste to be the ground conductor layer 6c, a paste having a high melting point metal powder such as W, molybdenum (Mo), manganese (Mn), etc. added and mixed with an appropriate organic binder and a solvent to form a paste is well known. By printing by a screen printing method, it is applied by printing onto a ceramic green sheet or a molded body of ceramics.

The first line conductor 6a, the second line conductor 6b and the ground conductor layer 6c may be formed by a thin film forming method. In that case, the first line conductor 6a and the second line conductor 6a are formed. 6b and the ground conductor layer 6c is tantalum nitride (Ta ₂ N), nichrome (Ni-Cr alloy), titanium (Ti), palladium (Pd), made of platinum (Pt) -Au like, after firing the ceramic green sheets It is formed.

Further, the frame body 2 forms a space inside the base body 1 for housing the semiconductor element 5 therein. This frame 2
Is made of a sintered material such as a Fe—Ni—Co alloy or Cu—W similar to the base 1, and is integrally molded with the base 1 or brazed to the base 1 via a brazing material such as silver brazing. Alternatively, they are erected on the outer peripheral portion of the upper main surface of the base 1 by being joined by a welding method such as a seam welding method.

It is preferable that the frame 2 is made of the above metal or a dielectric material such as ceramics and has a conductor layer such as a metallized layer formed on the surface thereof. In this case, as will be described later, of the terminating signals transmitted through the second line conductor 6b, those that cannot be converted from electrical energy to thermal energy in the high resistance portion 8 are formed on the inner surface of the cutout portion 16. By radiating the conductor layer 16b toward the frame 2, the terminating signal can be reliably grounded in the frame 2.

A through hole 2a into which the coaxial connector 3 is fitted is formed on the side surface of the frame body 2. The coaxial connector 3 is fitted into the through hole 2a and Au-Sn solder or Pb is used.
-Insert a sealing material such as Sn solder into the gap between the through hole 2a,
Thereafter, the sealing material is melted by heating, and the molten sealing material is filled in the gap between the coaxial connector 3 and the inner surface of the through hole 2a by a capillary phenomenon, so that the coaxial connector 3 is inserted into the through hole 2a. It is fitted and joined via a sealing material such as solder.

The coaxial connector 3 is for electrically connecting the semiconductor element 5 housed inside the semiconductor package to a coaxial cable connected to an external electric circuit.
A cylindrical outer peripheral conductor made of a metal such as a Ni-Co alloy is filled with an insulator such as glass, and a central axis is made of Fe-N.
A center conductor 3a made of a metal such as an i-Co alloy is fixed. The center conductor 3a is electrically connected to the first line conductor 6a of the circuit board 6-A via a conductive adhesive material such as solder. When the coaxial cable is attached to the coaxial connector 3 from the outside, the semiconductor element 5 housed inside is electrically connected to the external electric circuit via the center conductor 3a of the coaxial connector 3. And the semiconductor element 5
Electrode and the first line conductor 6a formed on the upper surface of the circuit board 6 are electrically connected by a bonding wire 7a, and the first line conductor 6a and the center conductor 3a are made of a conductive adhesive such as solder. Electrically connected via.

As shown in FIG. 2, one end of the second line conductor 6b formed on the upper surface of the circuit board 6-B is electrically connected to the semiconductor element 5, and the other end thereof is the circuit board 6-. A high resistance portion 8 is provided on the way to the edge of the upper surface of B, and a ground conductor layer 6c-B is formed on the lower surface. Further, a cutout portion 16 is formed on the side surface of the circuit board 6-B so as to penetrate the upper and lower surfaces and reach the other end of the line conductor 6b at the upper surface side opening, and the line conductor is formed on the inner surface of the cutout portion 16. A conductor layer 16b that electrically connects the other end of 6b and the ground conductor layer 6c-B is formed. Further, preferably, when the width of the cutout portion 16 is wider than that of the line conductor 6b, the line conductor 6b and the conductor layer 16b are electrically connected to the peripheral edge portion of the cutout portion 16 at the other end of the line conductor 6b. A peripheral conductor layer (second conductor layer) 16a for connection may be formed. In this way, the second line conductor 6b
Are electrically connected to the ground conductor layer 6c-B via the conductor layer 16b provided on the inner surface of the cutout portion 16.

As shown in FIG. 2, the second line conductor 6b
The cutout portion 16 is provided at the other end of the second line conductor 6b, and the conductor layer 16b is formed from the other end of the second line conductor 6b to the inner surface of the cutout portion 16 and the ground conductor layer 6c-B. Of the terminating signals transmitted through the line conductor 6b, those that cannot be converted from electrical energy to thermal energy in the high resistance portion 8 are radiated toward the frame body 2 by the conductor layer 16b formed on the inner surface of the cutout portion 16. By letting
The termination signal can be reliably grounded. As a result, the reflection of the high frequency signal component of the termination signal at the other end of the second line conductor 6b can be effectively reduced.

The high resistance portion 8 provided in the middle of the second line conductor 6b is made of Ta ₂ N, Ni--Cr alloy or the like, and is fired after being printed and applied to the circuit board 6, or is formed by a thin film forming method. And is formed so as to have a thickness, width, and shape having a desired resistance value. In order to finely adjust the resistance value, a part of the high resistance portion 8 can be removed by laser processing.

In the present invention, preferably the notch 1
6 is preferably wider than the second line conductor 6b,
In this case, among the termination signals transmitted through the second line conductor 6b, those that cannot be converted from electrical energy to thermal energy in the high resistance portion 8 are framed by the conductor layer 16b formed on the inner surface of the cutout portion 16. Easily radiate toward the body 2. As a result, the termination signal can be grounded more reliably, and the reflection of the high-frequency signal component of the termination signal at the other end of the second line conductor 6b can be effectively reduced.

Preferably, as shown in FIG. 3, it is formed on the upper surface of the circuit board 6-B so as to be substantially parallel to and surround the second line conductor 6b and on the other end side of the second line conductor 6b. By forming the connected same-plane ground conductor layer 17, the second line conductor 6 is formed at the other end of the second line conductor 6b.
The area of the ground conductor layer for electrically grounding the terminating signal transmitting b can be increased. Therefore, the termination signal can be smoothly transmitted from the second line conductor 6b to the ground conductor layer, and the reflection of the high-frequency signal component of the termination signal at the other end of the second line conductor 6b is effective. Can be reduced to.

Further, since the coplanar ground conductor layer 17 is provided so as to be substantially parallel to and surround the second line conductor 6b, the termination signal is supplied from the second line conductor 6b to the coplanar ground conductor layer 17. The high frequency signal component can be short-circuited through the space and the gap, and the terminating signal can be attenuated in the second line conductor 6b and grounded more reliably.

In this case, the same-plane ground conductor layer 17 is provided on the upper surface of the circuit board 6-B so as to surround the second line conductor 6b, but preferably, it is substantially the entire circumference of the upper surface of the circuit board 6-B. It is preferable that the high frequency signal component is radiated from the same-plane grounding conductor layer 17 toward the frame body 2.
That is, the termination signal can be grounded more reliably by radiating the termination signal that cannot be grounded in the high resistance portion 8 provided in the second line conductor 6b.

In this way, the terminating signal transmitted through the second line conductor 6b can be grounded more reliably,
The high frequency signal component of the terminating signal transmitted through the line conductor 6b prevents noise due to reflection from the ground conductor layer 6c-B and prevents the noise from entering the semiconductor element 5 and malfunctioning. Can be activated.

Then, Fe-Ni-Co is formed on the upper surface of the frame body 2.
The lid 4 made of a metal such as an alloy is joined by soldering or the seam weld method to obtain a semiconductor device as a product. The lid 4 allows the semiconductor element 5 accommodated in the container to be hermetically accommodated, and the semiconductor element 5 can be normally and stably operated for a long period of time. In this semiconductor device, the base 1 is mounted on an external electric circuit board, and the coaxial connector 3 and the coaxial cable connected to the external electric circuit are connected to each other, so that the semiconductor element 5 housed inside is electrically connected to the external electric circuit. And the semiconductor element 5 operates with a high frequency signal.

In the present invention, the preferable frequency of the high frequency signal input to and output from the semiconductor element 5 is about 5 to 20 GHz, and in this case, the transmission characteristic of the high frequency signal can be improved.

[0042]

EXAMPLES Examples of the present invention will be described below.

(Example) With respect to the example of the present invention and the comparative example, the transmission characteristics of the second line conductor 6b were analyzed as follows. The analysis of the transmission characteristics is shown in FIG.
The analysis model of the kind was performed. These analytical models are models of the configuration of FIG. That is, the circuit board 6 is made up of a circuit board 6-A and a circuit board 6-B and is mounted on the shelves 2b-A and 2b-B, respectively.

FIG. 7A is an analysis model (model A) in which the circuit board of the embodiment of the present invention is provided with the cutout portion 16, and the width of the cutout portion 16 is W = 0.5 mm. Is.
(B) shows that in the model A, the width of the cutout portion 16 is W =
This is the case of 1.0 mm. (C) is the case where the width of the cutout portion 16 in the model A is W = 2.0 mm.
(D) is the configuration of the comparative example, and the second line conductor 26b
2 is an analytical model (model B) in the case where the conductor layer 26c provided on the side surface of the circuit board 26 and the ground conductor layer 26c-B are electrically connected to each other. (E) is a configuration of a comparative example, in the case where the second line conductor 26b and the ground conductor layer 26c-B are electrically connected by a conductor layer provided on the inner surface of the through hole 26e having a diameter of 0.5 mm. It is an analysis model (model C). (F) is an analytical model (model D) in the case where the width of the notch portion 16 is W = 2.0 mm and the same-plane ground conductor layer 17 is provided so as to surround the second line conductor 6b.
Is.

In each analysis model, the circuit board 6-B
(26-B) (thickness 1.0 mm) is made of alumina ceramics (relative permittivity εr = 9.4), and the circuit board 6-B
A line conductor 6b (26b) having a 50 Ω high resistance portion 8 (28) made of Ta ₂ N was formed on the upper surface of (26-B). Then, the cutout portion 16 is provided at a portion of the side surface of the circuit board 6-B opposite to the side to which the bonding wire 7b (27b) is connected, on which the second line conductor 6b (26b) is extended.
And the conductor layer 16b or the conductor layer 26d was formed. Further, in FIG. 7E, a through hole 26e is provided between the side where the high resistance portion 28 and the bonding wire 27b are connected and the side surface of the circuit board 26 on the opposite side, and a conductor layer is formed on the inner surface of the through hole 26e. As a result, the second line conductor 26b was electrically connected to the ground conductor layer 26c-B on the lower surface of the circuit board 26.

In each analysis model, the grounding electrode is provided on both sides of the termination electrode of the semiconductor element 5, so that the grounding electrode is connected via the bonding wire 7b (27b). The ground electrode layer is formed on both sides of the second line conductor 6b (26b) at the edge of the upper surface of the circuit board 6-B (26-B). The ground electrode layer was electrically connected to the ground conductor layer 6c-B via a wiring conductor provided on the side surface of the circuit board 6 (26).

In each analysis model, the substrate 1 (1
The material of 1) is a Fe-Ni-Co alloy, the material of the frame 2 (22) is a Fe-Ni-Co alloy, and the bonding wire 7b.
The material of (27b) is Au, which is made of the same material, and is the same as that of the circuit board 6-B (26-B), the second line conductor 6b (26b), the cutout portion 16, the ground electrode layer, and the same. The detailed dimensions of the surface ground conductor layer 17 are as shown in FIGS. 7A to 7F (unit: mm). With respect to these analysis models, the reflection loss of the termination signal transmitted through the second line conductor 6b (26b) was obtained by simulation in the frequency band of 0 to 20 GHz.

FIG. 8 is a graph of the reflection loss of each analytical model. In the figure, comparing the model A and the model B, when the frequency is 5 to 20 GHz, the width W of the cutout portion 16 in the model A of the present invention is W =
It can be seen that the reflection loss is improved at 1.0 mm and 2.0 mm.

In the comparison of the analysis results of the model A and the model B, each member constituting each analysis model is made of the same material, and the second line conductor 6b (26b)
Part, ground conductor layer 6c (26c) part, conductor layer 6d (26
Since the transmission loss due to the d) portion and the high resistance portion 8 (28) can be regarded as the same, the difference in the transmission loss between the analysis models is that the cutout portion 16 and the conductor layer 16b on the inner surface of the cutout portion 16 are different.
It can be considered that it is based on the presence or absence and the width W of the cutout portion 16.

Therefore, in the model A of the present invention, the notch 16
It was found that, when the width W of W is 1.0 mm and 2.0 mm, a good signal line having excellent reflection characteristics of 5 to 20 GHz is formed as compared with the conventional model B. This is because, by providing the cutout portion 16 and the conductor layer 16b on the inner surface of the cutout portion 16, the electrical energy in the high resistance portion 8 of the termination signal transmitted through the second line conductor 6b can be completely converted into thermal energy. This is because the terminating signal can be reliably grounded by radiating the non-existing one toward the frame body 2 by the conductor layer 16b, and the reflection of the terminating signal at the other end of the second line conductor 6b can be reduced. . Here, when the width of the cutout portion 16 is W = 0.5 mm, it is considered that the width of the cutout portion 16 was small and the function of radiating the termination signal could not be sufficiently exerted, and the reflection characteristics could not be improved. .

Therefore, in order to exert the function of radiating the termination signal, it is necessary to make the width of the notch 16 appropriate. From the result of FIG. 8, the notch 16
It is considered that the reflection characteristic is good when the width W is wide, and it is preferable that the width W is not less than the width of the line conductor 6b.

Further, in the model A of the present invention, the width W of the notch portion 16 is W = 0.5 mm, and the model C of the configuration of the comparative example.
When compared with, the reflection characteristics of the model A were excellent. This is because the second line conductor 6b (26b) on the upper surface of the circuit board 6-B (26-B) and the ground conductor layer 6c-B (26c) on the lower surface.
-B) is electrically connected to the conductor layer 16 through the notch 16 having the conductor layer 16b on the inner surface, rather than through the through hole 26e having the conductor layer on the inner surface.
It is considered that b emitted the terminating signal to improve the reflection characteristic.

In the model D of the present invention, in the model A in which the width W of the cutout portion 16 is W = 2.0 mm, the second line conductor 6b is formed substantially all around the upper surface of the circuit board 6-B.
Is formed so as to surround the second line conductor 6
The ground plane conductor layer 17 connected to the other end side of b is provided, and the reflection characteristic is improved more than the model A.

This makes it possible to increase the area of the ground conductor layer 6c-B for grounding the terminating signal transmitted through the second line conductor 6b at the other end of the second line conductor 6b. It is considered that the termination signal could be smoothly transmitted from the conductor 6b to the ground conductor layer 6c-B, and the reflection of the termination signal at the other end could be reduced. Further, the same-plane grounding conductor layer 17 can short-circuit the terminating signal from the second line conductor 6b to the same-plane grounding conductor layer 17 through a space and a gap, and the second line conductor 6b can terminate the terminating signal. It is thought that this is because the ground was attenuated and could be reliably grounded. Further, a termination signal that cannot be grounded by the high resistance portion 8 provided in the second line conductor 6b is provided in the frame body 2 in the same-plane grounding conductor layer 17.
It is considered that the terminating signal could be grounded more reliably by radiating the signal toward the terminal.

By reliably grounding the termination signal as described above, it is considered that the model D has the best reflection characteristic of the termination signal. The improvement of the reflection characteristics by surely grounding the termination signal is more important as the frequency of the termination signal becomes higher.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present invention.

[0057]

As described above, according to the present invention, the circuit board placed on the shelf of the inner surface of the semiconductor package has one end electrically connected to the semiconductor element on the upper surface and the other end reaching the peripheral portion of the upper surface. A line conductor for grounding with a high resistance part is formed on the ground conductor layer, and a ground conductor layer is formed on the lower surface.The notch cuts through the upper and lower surfaces of the side surface and the other end of the line conductor reaches the upper opening. Of the terminating signal transmitted through the line conductor by forming the portion and forming the conductor layer electrically connecting the other end of the line conductor and the ground conductor layer on the inner surface of the cutout portion. By radiating what cannot be converted from electrical energy to thermal energy in the high resistance part toward the frame by the conductor layer formed on the inner surface of the cutout part,
The termination signal can be reliably grounded, and the reflection of the high-frequency signal component of the termination signal at the other end of the line conductor can be effectively reduced.

According to the present invention, preferably, the notch portion is wider than the line conductor, so that a termination signal which cannot be electrically grounded in the high resistance portion can be provided on the inner conductor layer of the notch portion. By making it easier to radiate toward the frame,
The terminal signal can be grounded more reliably.

Further, preferably, the same-plane ground conductor layer is formed on the upper surface of the circuit board so as to surround the line conductor and is connected to the other end side of the line conductor, so that the other end of the line conductor is formed. Since the area of the ground conductor layer for grounding the termination signal can be increased, the termination signal can be smoothly transmitted from the line conductor to the ground conductor layer, and the termination signal at the other end of the line conductor can be transmitted. Can effectively reduce the reflection of the high frequency signal component of. In addition, the high frequency signal component of the termination signal can be short-circuited from the line conductor to the same-plane ground conductor layer through a space and a gap,
The termination signal can be attenuated in the line conductor and grounded more reliably. Further, the termination signal, which cannot be grounded at the high resistance portion provided in the line conductor, is radiated toward the frame body in the same-plane grounding conductor layer, so that the termination signal can be grounded more reliably.

Therefore, it is possible to prevent noise due to reflection from being generated by the high frequency signal component of the terminating signal transmitted through the line conductor and prevent the noise from entering the semiconductor element, and to operate the semiconductor element normally.

A semiconductor device of the present invention comprises a package for accommodating a semiconductor element of the present invention, a circuit board placed on a shelf,
Since the semiconductor element mounted on the mounting portion and electrically connected to one end of the line conductor of the circuit board and the lid body joined to the upper surface of the frame body are provided, the above-mentioned effects of the present invention A highly reliable semiconductor package using

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor package of the present invention.

FIG. 2 is an enlarged plan view of an essential part of a circuit board housed in a semiconductor package of the present invention.

FIG. 3 is an enlarged plan view of an essential part of a circuit board housed in a semiconductor package of the present invention.

FIG. 4 is a sectional view of a conventional semiconductor package.

FIG. 5 is an enlarged plan view of an essential part of a circuit board housed in a conventional semiconductor package.

FIG. 6 is an enlarged plan view of an essential part of a circuit board housed in a conventional semiconductor package.

7A to 7C show examples of the circuit board of the semiconductor package of the present invention, and FIGS. 7D to 7E show examples of the circuit board of the semiconductor package of the comparative example. FIG. 5A is a plan view of an analysis model (model A) of the circuit board of the present invention, and FIG. 9B is a plan view of an analysis model of the circuit board of the present invention (another example of the model A). (C) is a plan view of an analysis model (another example of model A) of a circuit board of the present invention, (d) is a plan view of an analysis model (model B) of a circuit board of a comparative example, and (e) is a comparative example. 3A is a plan view of an analysis model (model C) of the circuit board of FIG. 4F is a plan view of the analysis model (model D) of the circuit board of the present invention.

8 is a graph showing the analysis results of reflection loss for models A to D in FIG.

[Explanation of symbols]

1: Base 1a: Placement part 2: Frame body 2b: Shelf 4: Lid 5: Semiconductor element 6: Circuit board 6b: Second line conductor 6c: Ground conductor layer 8: High resistance part 16: Notch 16b: conductor layer 17: Same-plane ground conductor layer

Claims (4)

[Claims] 1. A base body having a mounting portion for mounting a semiconductor element on an upper main surface, and an outer peripheral portion of the upper main surface are joined to surround the mounting portion, and a circuit board is provided on an inner surface. In a package for housing a semiconductor element, which comprises a frame having a shelf for mounting, the circuit board has one end electrically connected to the semiconductor element on an upper surface and the other end on an edge portion of the upper surface. A line conductor for grounding, which has reached a high resistance part in the middle, is formed, and a ground conductor layer is formed on the lower surface, which penetrates the upper and lower surfaces on the side surface and the other end of the line conductor on the upper surface side opening. Is formed, and a conductor layer for electrically connecting the other end of the line conductor and the ground conductor layer is formed on the inner surface of the notch. Package for semiconductor device storage. 2. The package for accommodating a semiconductor element according to claim 1, wherein the cutout portion is wider than the line conductor. 3. The same-plane ground conductor layer is formed on the upper surface of the circuit board so as to surround the line conductor and is connected to the other end of the line conductor. The package for housing a semiconductor device according to claim 1 or 2. 4. The package for housing a semiconductor element according to claim 1, the circuit board mounted on the shelf, and the circuit board mounted on the mounting part. A semiconductor device comprising: the semiconductor element electrically connected to one end of the line conductor; and a lid body joined to an upper surface of the frame body.