JP2002543442A - Thin-film optical path adjusting device - Google Patents

Abstract

(57) Abstract: A thin-film optical path adjusting device is disclosed. The thin-film type optical path adjusting device has an active matrix, a support member, an actuating section, and a reflection member. The support member has a support line, a support layer and an anchor in the form of a rectangular ring. The insulating member is formed from the upper electrode to the support layer. The anchor supporting the actuating portion is formed perpendicular to the actuating portion. Since no stress concentration line is generated, the initial inclination of the actuating portion is prevented. Therefore, the reflection angle of the reflection member can be maintained constant, the light efficiency is increased, and the quality of the image projected on the screen is improved. Further, an electrode-like short-circuit generated between the upper electrode and the lower electrode is prevented by the insulating member. Therefore, defects at pixel points of the thin film type optical path adjusting device are effectively reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film optical path adjusting device, and more particularly, to effectively preventing point defects of pixels and improving image quality of an image projected on a screen. The present invention relates to a thin-film type optical path adjusting device that can be used.

(Prior Art) Generally, optical path adjusting devices are classified into two types by light. One of them is CRT
A direct-view image display device such as a (Cathode Ray Tube) and another type is a projection image display device such as a liquid crystal display (LCD).
The CRT device has excellent image quality, but has a problem that the size and size of the screen increase the weight and volume of the device and increase the manufacturing cost. The liquid crystal display (LCD) has a simple optical structure, and the weight and volume of the LCD are smaller than those of the CRT. However, the liquid crystal display device (LCD) has a problem in that the polarization of an incident light beam causes the liquid crystal display device to have a 1
The efficiency is low to the extent that it has a light efficiency of 2% or less. Also, there is a problem that the response speed of the liquid crystal material of the LCD is slow and the inside is easily overheated.

[0003] Therefore, in order to solve the above problem, a DMD (Digital Mirror Device) has been proposed.
Alternatively, an image display device such as an AMA (Actuated Mirror Array) has been developed. At present, a DMD device has a light efficiency of about 5%, and an AMA device can obtain a light efficiency of 10% or more. In addition, the AMA apparatus can improve the contrast of an image projected on a screen to form a brighter and clearer image. The AMA is not affected not only by the polarity of the incident light beam but also by the reflected light beam. The AMA has better efficiency than LCD or DMD.

FIG. 1 shows a schematic diagram of a general AMA engine system disclosed in US Pat. No. 5,126,836 to Gregory Um. Referring to FIG. 1, a light beam incident from a light source 1 passes through a first slit 3 and a first lens 5, R, G, and B (R
ed, Green, Blue) The light is separated into R, G, and B colors by the color field. R, G, B
Separately separated light beams are reflected by the first mirror 7, the second mirror 9 and the third mirror 11, respectively, and are incident on AMA elements 13, 15, 17 installed corresponding to the respective mirrors. Each of the AMA elements 13, 15, and 17 tilts a mirror provided therein, and an incident light beam is reflected by the mirror. At this time, the AMA elements 13, 15
, 17 are tilted by the deformation of an active layer formed below the mirror. The light reflected by the AMA elements 13, 15, 17
After passing through the lens 19 and the second slit 21, a projection lens
23 projects the image onto a screen (not shown) to connect the images.

In most cases, zinc oxide (ZnO) is used as such a deformation layer. However, PZT (lead zirconate titanate, Pb (Zr, Ti) O ₃ ) has better piezoelectric properties than zinc oxide. The PZT is a solid solution of PbZrO ₃ and PbTiO ₃ . PZT having a cubic structure is present in a paraelectric phase at high temperatures. At room temperature, the structure is determined by the composition ratio of Zr and Ti. The structure is orthorhombic and antiferroelectric phase.
, Rhombohedral ferroelectric layer, and tetragonal (t
etragonal) in the ferroelectric layer.

[0006] PZT is a composition in which the composition ratio of Zr and Ti is about 1: 1 and has a tetragonal phase.
Phase boundary between the rhombohedral phase and the rhombohedral phase:
MPB), and PZT has a maximum dielectric characteristic (electric pr) at the phase boundary (MPB).
operty) and piezoelectric properties. The phase boundary (MPB) is a region where a tetragonal phase and a rhombohedral phase coexist over a relatively wide range of formation without being located in a specific formation.
Researchers have not agreed on the creation of a phase coexistent region for PZT. The cause of such phase coexistence is thermodynamic safety (thermodynam
ic stability), compositional fluctuations, and internal stresses (inte
Various theories such as rnal stress) have been proposed. Currently, PZT thin films (thin fil
m) spin coating method, chemical vapor deposition (Chemical Vapor
It can be manufactured using various processes such as a Deposition (CVD) method and a sputtering method.

AMA, which is such an optical path adjusting device, has a bulk type and a thin fibrous type.
(lm) type. The bulk type optical path adjusting device is disclosed in US Pat. No. 5,469,302 by Dae-Young Lim. The bulk type optical path adjusting device is a ceramic wafer (waf) in which a multilayer ceramic is cut into thin pieces and metal electrodes are formed inside.
er) is mounted on an active matrix in which transistors are built, and then the ceramic wafer is processed by a sawing method, and a mirror is placed on the ceramic wafer. However, the bulk-type optical path adjustment device has a problem in that high precision is required in design and manufacture, and the response speed of the deformable layer is slow. Accordingly, a thin film type optical path adjusting device which can be manufactured using a semiconductor process has been developed.

The thin-film type optical path adjusting device is disclosed in Japanese Patent Application No. 08/814 filed in the United States by the present applicant.
, 019 (Title of Invention: Thin film type optical path adjusting device and manufacturing method thereof (THIN FILM ACTUA)
TED MIRROR ARRAY IN AN OPTICAL PROJECTION SYSTEM AND METHOD FOR MANUFACT
URING THE SAME)).

FIG. 2 is a plan view of the thin-film optical path adjusting device, FIG. 3 is a perspective view of the thin-film optical path adjusting device shown in FIG. 2, and FIG. 4 is a view taken along line A ₁ -A ₂ of FIG. 1 shows a cross-sectional view taken along the line.

Referring to FIGS. 2 to 4, the thin film type optical path adjusting device includes a substrate 31 and a substrate 31.
And a reflection member 55 formed at the center of the actuator 57.

The substrate 31 having electric wiring (not shown) includes a connecting terminal 33 formed on the electric wiring and the substrate 3.
1 and a protective layer (passivation layer) 35 formed on the connection terminal 33;
And an etching stop layer 37 formed on the protective layer 35.
including. The actuator 57 includes a support layer 43, a lower electrode 45, a deformable layer 47, an upper electrode 49, and a via contact 53.

Referring to FIG. 3, the support layer 43 has a first electrode attached below the lower electrode 45.
And a second portion exposed to the outside of the lower electrode 45. The support layer 43
The lower portions of the lateral borders are partially adhered to the etching prevention layer 37. The attached portions of the support layer 43 are called anchors 43a and 43b that support the actuator 57. The side portion of the support layer 43 extends horizontally from the attached portion. A central portion of the support layer 43 is formed between the side portions and integrally with the side portions. The center of the support layer 43 has a rectangular shape.

The lower electrode 45 is formed on the central portion and the side portions of the support layer 43. The deformation layer 47 is formed on the lower electrode 45 and the upper electrode 49. The lower electrode 45 has a “U” shape. The deformation layer 47 is smaller than the lower electrode 45 but has the same shape as the lower electrode 45. The upper electrode 4
9 is smaller than the deformation layer 47, but has the same shape as the deformation layer 47. First
When a signal is provided to the lower electrode 45 and a second signal is provided to the upper electrode 49, an electric field is generated between the upper electrode 49 and the lower electrode 45, whereby the electric field is generated. The deformation layer 47 is deformed by the electric field.

The via contact 53 is a via hole 51 formed from one side of the deformation layer 47 to the connection terminal 33 through the lower electrode 45, the support layer 43, the anti-etching layer 37 and the protection layer 35. Is formed inside. The via contact 51 connects the lower electrode 45 to the connection terminal 33.

The reflection member 55 for reflecting incident light is formed at the center of the support layer 43. The reflection member 55 has a predetermined thickness from the surface of the support layer 43 to one surface of the deformation layer 47. Preferably, the reflecting member 55 has a rectangular shape.
lar shape).

Hereinafter, a method for manufacturing the thin-film optical path adjusting device described in detail will be described with reference to the drawings.

FIGS. 5A to 5D illustrate a manufacturing process of the thin film type optical path adjusting device.

Referring to FIG. 5A, the protection layer 35 is formed on an upper portion of the substrate 31 including electrical wirings (not shown) and connection terminals 33. The electrical wiring and the connection terminal 3
3 receives the first signal (image signal) from the outside and transmits the first signal to the lower electrode 45. Preferably, the electrical wiring includes a MOS transistor for performing a switching operation. The connection terminal 33 is formed of a metal, for example, tungsten (W). The connection terminal 33 is connected to the electrical wiring. The passivation layer 35 is formed to have a thickness of about 0.1 to 1.0 μm by using a chemical vapor deposition (CVD) method. The protective layer 35 is made of phosphor silicate glass (PSG).
The protection layer 35 prevents the substrate 31 on which the electrical wiring and the connection terminals 33 are formed from being damaged during a subsequent process.

An etching prevention layer 37 is formed on the protection layer 35. The anti-etching layer 37 is formed using nitride to a thickness of about 1000 to 2000 degrees. The anti-etching layer 37 is formed by low pressure chemical vapor deposition (Low Pressure Chemical Vapor Depositio).
n: formed using the LPCVD method. The etching prevention layer 37 prevents the protection layer 35 and the substrate 31 from being etched and damaged during a subsequent etching process.

A sacrificial layer 39 is formed on the anti-etching layer 37 at atmospheric pressure chemical vapor deposition (AP) using phosphor silicate glass (PSG).
CVD), so that the sacrificial layer 39 has a thickness of 0.5 to 4.0 μm.
It has a thickness of about m. In this case, since the sacrifice layer 39 covers the upper portion of the substrate 31 including the electrical wiring and the connection terminal 33, the flatness of the sacrifice layer 39 is very poor. Therefore, the surface of the sacrificial layer 39 is planarized by spin-on-glass (SOG) or CMP (Chemical Mechanical Polishing). Subsequently, to form the support layer 43, a first portion of the etch prevention layer 37 having the connection terminal 33 thereunder and a first portion of the etch prevention layer 37 adjacent to the first portion of the etch layer 37 are formed. A first portion of the sacrificial layer 39 having a connection terminal 33 thereunder and a second portion of the sacrificial layer 39 adjacent to the first portion of the sacrificial layer 39 are etched to expose the two portions.

Referring to FIG. 5B, a first layer is formed on the first and second portions of the etching prevention layer 37 and on the sacrificial layer 39. The first layer is formed using a hard material such as nitride or metal. The first layer is formed using an LPCVD method and has a thickness of about 0.1 to 1.0 μm. After the first layer, patterning is performed to form a support layer 43.

The bottom electrode layer is formed on the first layer using an electrically conductive metal such as platinum (Pt), tantalum (Ta), or platinum-tantalum (Pt-Ta). It is formed. The lower electrode layer is formed by a sputtering method or a chemical vapor deposition (CVD) method, and the lower electrode layer has a thickness of 0.1 to 1.0 μm.
It is formed to have a thickness of about. Thereafter, the lower electrode layer is iso-cut to separate each lower electrode layer, and each pixel of the thin film type optical path adjusting device independently receives the first signal from outside through the electrical wiring and the connection terminal 33. To receive. The lower electrode layer is patterned to form a lower electrode 45 later.

The second layer is made of a piezoelectric material such as PZT (Pb (Zr, Ti) O ₃ ) or PLZT ((Pb, La) (Zr, Ti) O ₃ ), and is formed on the lower electrode layer. The second layer is formed to have a thickness of about 0.1 to 1.0 μm, preferably about 0.4 μm. After the second layer is formed by a sol-gel (Sol-Gel) method, a sputtering method, or a chemical vapor deposition (CVD) method, the second layer is formed by a rapid thermal treatment (Rapid Thermal Anion).
nealing: Heat treatment is performed using the RTA) process. The second layer is subsequently patterned with a deformation layer 47.

The upper electrode layer is formed on the second layer using an electrically conductive metal such as aluminum (Al), platinum (Pt), or tantalum (Ta). The upper electrode layer is formed to have a thickness of about 0.1 to 1.0 μm by using a sputtering method or a CVD method. The upper electrode layer is patterned with the upper electrode 49 later.

Referring to FIG. 5C, after a first photoresist (not shown) is coated on the upper electrode layer by a spin coating method, the first photoresist is used as an etching mask to form the upper electrode. The upper electrode layer is patterned to form 49. As a result, the upper electrode 49 has a U-shape. The second signal (bias signal) is provided to the upper electrode 49 for generating the electric field between the upper electrode 49 and the lower electrode 45.

After the first photoresist is etched away, the upper electrode 49 and the second photoresist are removed.
A second photoresist (not shown) is applied on top of the layer. The second layer is patterned to form the deformation layer 47 using the second photoresist as an etching mask. The deformation layer 47 has a U-shape having an area larger than that of the upper electrode 49. After the second photoresist is etched and removed, a third photoresist (not shown) is coated on the upper electrode 49, the deformation layer 47, and the lower electrode layer by a spin coating method. The lower electrode layer is patterned by using the third photoresist as an etching mask to pattern the lower electrode layer.
To form The lower electrode 45 has a larger area than that of the deformation layer 47.
It has the shape of a letter. Next, the third photoresist is etched away.

Thereafter, to form a via hole 51 from one side of the deformation layer 47 to the connection terminal 33, the deformation layer 47, the lower electrode 45, the first layer, the etching prevention film 37, and the protection film 35. Etch a part of. The via contact 53 is formed in the via hole 51 using an electrically conductive metal such as tungsten (W), platinum, aluminum, or titanium. The via contact 53 is connected to the connection terminal 3 by using a sputtering method or a CVD method.
3 to the lower electrode 45. The via contact 53 connects the lower electrode 45 to the connection terminal 33.

Referring to FIG. 5D, after a fourth photoresist (not shown) is coated on the lower electrode 45 by a spin coating method, the support layer 43 is formed using the fourth photoresist as an etching mask. The first layer is patterned to form. The support layer 43 is divided into two sides and a center. The lower portions of both sides of the support layer 43 are partially attached to the etching prevention layer 37 and are called anchors 43a and 43b. The both sides of the support layer 43 are formed parallel to the etching prevention layer 37 from the attached portion. The center of the support layer 43 is formed integrally with the both sides between the two sides. The central portion of the support layer 43 has a rectangular shape. Next, the fourth photoresist is etched away. When the first layer is patterned, a part of the sacrificial layer 39 is exposed.

After the exposed portion of the sacrificial layer 39 and the upper portion of the support layer 43 are coated with a fifth photoresist by a spin coating method, the fifth photoresist is exposed to expose a central portion of the support layer 43. Is patterned. Reflecting member 55
Is formed on a central portion of the support layer 43 using a reflective material such as silver, platinum, or aluminum. The reflection member 55 is formed to have a thickness of about 0.3 to 2.0 μm by using a sputtering method or a CVD method. The reflecting member 55 for reflecting light incident from a light source (not shown) is provided on the support layer 43.
It has the same shape as that of the central part of. Thereafter, the fifth photoresist and the sacrificial layer 39 are removed using hydrogen fluoride (HF) vapor to complete the actuator 57. When the sacrificial layer 39 is removed, the sacrificial layer 3 is removed.
An air gap 41 is formed where 9 is located.

The first signal is externally provided to the lower electrode 45 through the electrical wiring, the connection terminal 33 and the via contact 53. At the same time, when the second signal is provided to the upper electrode 49 from a common line (not shown), the upper electrode 4
The electric field is generated between the lower electrode 9 and the lower electrode 45. The deformation layer 47 formed between the upper electrode 49 and the lower electrode 45 is deformed by the electric field. The deformation layer 47 is deformed in a direction orthogonal to the electric field. The deformation layer 47
Is actuated in a direction opposite to the direction in which the support layer 43 is located. That is, the actuator 57 is actuated upward, and the support layer 43 attached to the lower electrode 45 is actuated.
Is actuated upward according to the tilting of the actuator 57.

Since the reflection member 55 is formed at the center of the support layer 43, the reflection member 55 that reflects light incident from the light source is tilted together with the actuator. Therefore, the reflection member 55 reflects the light on the screen, and an image is formed on the screen.

However, in the thin film type optical path adjusting device described in detail, the lower electrode is iso-cut to separate the pixels of the thin film type optical path adjusting device.
Cracks are formed from a portion of the second layer (the deformed layer) formed in the so-cut portion to another portion of the second layer. Therefore, the upper electrode and the lower electrode are partially connected to each other through the crack generated in the deformation layer, so that an electric short circuit occurs between the upper electrode and the lower electrode. . When an electric short circuit occurs, the actuator is not driven, and a point defect of a pixel occurs in the thin film type optical path adjusting device.

In addition, a residual stress and a stress change during a process of forming an actuator subsequently along a boundary surface of a step generated when patterning the sacrificial layer to form the anchor for supporting the actuator. The actuator is initially tilted even when the first and second signals are not provided because the deformation driving force such as (stress gradient) is concentrated. Therefore, when the actuator is tilted at an initial stage, the light efficiency of the incident light decreases because the reflection member cannot have a constant reflection angle. As a result, the quality of the image projected on the screen is reduced.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to effectively prevent a point defect of a pixel without iso-cutting a lower electrode, and to increase a light efficiency of incident light to improve a screen. It is an object of the present invention to provide a thin-film optical path adjusting device capable of increasing the quality of an image projected thereon.

According to another aspect of the present invention, there is provided a thin-film optical path adjusting device including an active matrix, a support member, a first actuating section, a second actuating section, and a reflecting member.

The active matrix includes a substrate having a built-in MOS transistor for switching operation and a first metal layer having a drain pad extending from a drain of the MOS for transmitting a first signal.

The support means has a support line, a support layer, a first anchor and a second anchor. The support line is formed on the active matrix, and the support layer is formed integrally with the support line. The support layer has a square ring shape. The first and second anchors are respectively formed between the active matrix and a portion of the support layer adjacent to the support line.

The first actuating unit has a first lower electrode, a first deformation layer, and a second upper electrode. The first lower electrode receives a first signal. The first lower electrode is formed on a first portion of the support layer formed to be perpendicular to the support line, and the first upper electrode corresponds to the first lower electrode. The first upper electrode is a second upper electrode.
Accepting a signal and generating a first electric field. The first deformation layer is formed between the first lower electrode and the first upper electrode, and is deformed by the first electric field.

The second actuating unit includes a second lower electrode, a second deformation layer, and a second upper electrode. The second lower electrode receives the first signal. The second lower electrode is formed on a second portion of the support layer formed to be perpendicular to the support line. The second upper electrode corresponds to the second lower electrode, and receives the second signal to generate a second electric field. The second active layer includes the second lower electrode and the second lower electrode.
It is formed between the upper electrode and the upper electrode and is deformed by the second electric field.

The reflection member is formed on the first actuating portion and the second actuating portion to reflect incident light. Preferably, the active matrix includes a first protection layer formed on the substrate and the first metal layer, a second metal layer formed on the first protection layer, and a second protection layer on the second metal layer. The method further includes a second protective layer formed, and an anti-etching layer formed on the second protective layer.

The first lower electrode has a rectangle with a protrusion, the first active layer has a rectangle smaller than the first lower electrode, and the first upper electrode has a first deformation layer. Has a smaller rectangle. Also, the second lower electrode has a rectangle in which a protrusion corresponding to the protrusion of the first lower electrode is formed, the second deformation layer has a rectangle smaller than the second lower electrode, and The second upper electrode has a rectangle smaller than the second deformation layer.

Preferably, the first lower electrode has an inverted L shape, and the second lower electrode has an L shape corresponding to the first lower electrode.

The first anchor is formed at a lower portion between the first actuating portion and the second actuating portion, and is attached to a first portion of the active matrix having a drain pad formed at a lower portion thereof. And the second anchor is formed at a lower portion outside the first actuating portion and the second actuating portion, respectively. The second anchor is attached to second and third portions of the active matrix, respectively, adjacent to the first portion of the active matrix.

Preferably, the thin film type optical path adjusting device includes a via contact for transmitting the first signal from the drain pad to the first lower electrode and the second lower electrode.
A first lower electrode connecting member formed from the via contact to the protrusion of the first lower electrode; and a second lower electrode connecting member formed from the via contact to the protrusion of the second lower electrode. Including. The via contact is formed in a via hole formed from the first anchor to the drain pad. The via contact, the first lower electrode connecting member, and the second lower electrode connecting member are formed of an electrically conductive metal such as silver, platinum, tantalum, or platinum-tantalum.

More preferably, the thin film type optical path adjusting device is formed from a portion of the first upper electrode to a portion of the support layer through a common line for transmitting the second signal and a portion of the first lower electrode. A first insulating member, a first upper electrode connecting member formed from the common line to the first upper electrode through the first insulating member, and a portion of the second upper electrode through a portion of the second lower electrode. A second insulating member formed up to a portion of the support layer; and a second upper electrode connecting member formed from the common line to the second upper electrode through the second insulating member. The common line is formed above the support line.

The first and second insulating members are formed of amorphous silicon such as silicon dioxide (SiO ₂ ) or phosphorus pentoxide (P ₂ O ₅ ), or a low-temperature oxide film.

The first and second upper electrode connection members are formed of an electrically conductive metal such as silver, platinum, tantalum, or platinum-tantalum.

A post for supporting the reflective member is formed between a central portion of the reflective member and a portion of the support layer, and is spaced apart from the support line.

In the thin film optical path adjusting device according to the present invention, the first signal is a MOS transistor embedded in the substrate, the drain pad of the first metal layer, the via contact, and the first and second lower electrode connecting members. Through the first and second lower electrodes. At the same time, the second signal is externally provided to the first and second upper electrodes through the common line and the first and second upper electrode connecting members.
As a result, a first electric field is generated between the first upper electrode and the first lower electrode,
The second electric field is generated between the second upper electrode and the second lower electrode. The first deformed layer formed between the first upper electrode and the first lower electrode is deformed by the first electric field and is formed between the second upper electrode and the second lower electrode. The second deformed layer is deformed by the second electric field. The first and second
The deformation layer is deformed in a direction perpendicular to the first and second electric fields, respectively. The first
The first actuating portion including a deformable layer and the second actuating portion including the second deformable layer;
The actuating portion is actuated in a direction opposite to a position where the support layer is located. That is, the first and second actuating portions are actuated upward, and the support layer attached to the first and second lower electrodes is used for tilting of the first and second actuating portions. Actuated to the top accordingly.

The reflection member is supported by a post formed on one side of the support layer. The reflecting member for reflecting incident light from the light source is tilted together with the first and second actuating portions. Therefore, the reflection member reflects the light to the screen, and an image is formed on the screen.

According to the present invention, the first and second anchors supporting the actuating portion are formed in a direction perpendicular to the actuating portion. Since no stress concentration line is generated between the anchor and the actuating part, the actuating part is not initially tilted and has a horizontal surface. Accordingly, the desired reflection angle of the reflecting member formed on the actuating member is constant, the light efficiency is increased, and the quality of the image projected on the screen is improved.

Further, an electrical short generated between the upper electrode and the lower electrode is prevented by the insulating member. As a result, point defects of pixels in the thin film type optical path adjusting device are effectively reduced.

Hereinafter, the present invention will be described in detail with reference to the drawings, focusing on preferred embodiments of the present invention.

Embodiment 1 FIG. 6 is a plan view of a thin-film type optical path adjusting device according to the present invention, FIG. 7 is a perspective view of the thin-film type optical path adjusting device shown in FIG. 6, and FIG. 8 is shown in FIG. it is a cross-sectional view taken along the thin film AMA in B ₁ -B _2-wire, a cross-sectional view of the thin film AMA illustrated taken along a C ₁ -C ₂ line in FIG. 9 Fig.

Referring to FIGS. 6 and 7, the thin-film type optical path adjusting device according to the present embodiment is formed on the active matrix 100, the support member 175 formed on the active matrix 100, and the support member 150, respectively. The first and second actuators 210 and 211 include a reflecting member 260 formed on the first and second actuators 210 and 211.

Referring to FIG. 8, the active matrix 100 has a size of M × N (M and N are integers).
The substrate 101 having the P-MOS transistors 120 therein, the first metal layer 135 extending from the drain 105 and the source 110 of the P-MOS transistor 120, the first protection layer 140, the second metal layer 145, and the second protection Layer 150 and anti-etch layer 15
5 is included. The first metal layer 135 is formed on the substrate 101 and the first metal layer 135 is formed on the substrate 101.
The protection layer 140 is formed on the first metal layer 135 and the substrate 101.
The second metal layer 145 is formed on the first protection layer 140, and the second protection layer 150 is formed on the second metal layer 145. The etching prevention layer 155 is formed on the second protection layer 150.

The first metal layer 135 is formed from the drain 105 of the P-MOS transistor 120 to the first actuating unit 210 and the second actuating unit 2.
11 and a drain pad extending to a first anchor 171 formed at and below. The second metal layer 145 includes a titanium (Ti) layer and a titanium nitride (TiN).
) Layer. The hole 147 is formed in a part of the second metal layer 145 having the drain pad of the first metal layer 135 formed thereunder.

Referring to FIGS. 7 to 9, the support member 175 includes a support line 174, a support layer 170, the first anchor 171, and two second anchors 172 a and 172.
2b. The support line 174 and the support layer 170 are connected to the etching prevention layer 15.
5 is formed at the top. The first air gap 165 is interposed between the etch prevention layer 155 and the support line 174. In addition, the first air gap 165 is interposed between the etching prevention layer 155 and the support layer 170.

The common line 240 is formed above the support line 174. The support line 174 performs a function of supporting the common line 240. The support layer 170 has a square ring shape. The support layer 170 is formed integrally with the support line 174.

The first anchor 171 is formed at a lower portion between two arms of the support layer 170 having a rectangular ring shape. The two arms of the support layer 170 extend perpendicular to the support line 174. The first anchor 171 is attached to a first portion of the etching prevention layer 155 having a drain pad of the first metal layer 135 formed thereunder. The first anchor 171 is connected to the support layer 170.
Formed integrally with the two arms. The two second anchors 172a, 172
b are formed at the lower portions of the support layer 170 outside the two arms. In addition, the second anchors 172a and 172b are formed integrally with the two arms of the support layer 170. The second anchors 172a and 172b are attached to a second portion of the anti-etching layer 155 and a third portion of the anti-etching layer 155, respectively. The first anchor 171 and the two second anchors 172a and 172b are connected to the support line 174.
Is attached to a lower portion of a portion of the support layer 170 adjacent to the support layer 170. The first anchor 1
71 and the second anchors 172a and 172b both support the support layer 170, and the first anchor 171 and the second anchors 172a and 172b are connected to the first anchor 172a and 172b.
It supports an actuating section 210 and the second actuating section 211. The first anchor 171 and the second anchors 172a and 172b each have a box shape.

The center of the support layer 170 is supported by the first anchor 171, and both sides of the support layer 170 are supported by the second anchors 172 a and 172 b. Therefore, the vertical portion of the support member 175 has a T shape.

The via hole 270 is a part of the etching prevention layer 155, the first protection layer 150,
A hole is formed from the center of the first anchor 171 to the drain pad of the first metal layer 135 through the hole 147 of the second metal layer 145 and the first protection layer 140. Via contact 280 is formed in via hole 270.

The actuating part 210 and the second actuating part 211 are respectively formed on two arms of the support layer 170. The actuating section 210 and the second actuating section 211 are formed in parallel. The first actuating unit 210 includes a first lower electrode 180 and a first deformable layer 190.
And a first upper electrode 200. The second actuating section 211 is a second actuating section.
The lower electrode 181, the second deformation layer 191, and the second upper electrode 201 are included.

The first lower electrode 180 is formed on one of two arms of the support layer 170. The first lower electrode 180 has a rectangular shape including a protrusion, and preferably, the first lower electrode 180 has an inverted L-shape. The first lower electrode 18
0 is separated from the support line 174 by a predetermined distance. The first lower electrode 18
The zero protrusion extends downward like a staircase. The protrusion of the first lower electrode 180 extends to a portion of the first anchor 171 adjacent to the via hole 270. The first deformation layer 190 is formed on the first lower electrode 180. The first deformation layer 190 has a smaller rectangle than the first lower electrode 180. The first upper electrode 200 is formed on the first deformation layer 190. The first upper electrode 200 has a smaller rectangle than the first deformation layer 190.

The second lower electrode 181 is formed above the other arm of the two arms of the support layer 170. The second lower electrode 181 has a rectangular shape including a protrusion, and preferably, the second lower electrode 181 has an L shape corresponding to the first lower electrode 180.
It has the shape of a letter. Also, the second lower electrode 181 is separated from the support line 174 by a predetermined distance. The protrusion of the second lower electrode 181 extends to a portion of the first anchor 171 adjacent to the via hole 270 like the protrusion of the first lower electrode 180. As a result, the first and second lower electrodes 1
These projections 80 and 181 are formed so as to surround the via hole 270. The second deformation layer 191 has a rectangle smaller than the second lower electrode 181. The second upper electrode 201 is formed on the second deformation layer 191. The second upper electrode 201 has a rectangular shape smaller than the second deformation layer 191.

The via contact 280 is formed from a drain pad of the first metal layer 135 to an upper portion of the via hole 270. The first lower electrode connecting member 290 is formed from the via contact 280 to the protrusion of the first lower electrode 180. The first lower electrode 180 is connected to the drain pad of the first metal layer 135 through the via contact 280 and the first lower electrode connecting member 290.
In addition, the second lower electrode connecting member 291 is formed from the via contact 280 to the protrusion of the second lower electrode 181. The second lower electrode 181 is connected to the drain pad of the first metal layer 135 through the via contact 280 and the second lower electrode connecting member 291.

The first insulating layer member 220 is formed from the protrusion of the first upper electrode 200 to a part of the support layer 170 adjacent to the support line 174. The first upper electrode connecting member 230 is formed from the first upper electrode 200 to the common line 240 through the first insulating member 220. The first upper electrode connecting member 230 is connected to the first
The upper electrode 200 is connected to the common line 240. The first insulating member 220 prevents the first upper electrode 200 and the first lower electrode 180 from being connected. Therefore, the first insulating member 220 is connected to the first upper electrode 200 and the first upper electrode 200.
The occurrence of an electrical short circuit with the lower electrode 180 is prevented.

Further, the second insulating layer member 221 is formed from the protrusion of the second upper electrode 201 to a part of the support layer 170 adjacent to the support line 174. The second upper electrode connecting member 231 is connected to the second upper electrode 201 through the second insulating member 221.
To the common line 240. The second upper electrode connecting member 231 connects the second upper electrode 201 to the common line 240. The second insulating member 221 and the second upper electrode connecting member 231 are formed in parallel with the first insulating member 220 and the first upper electrode connecting member 230, respectively. The second insulating member 221
Prevents the second upper electrode 201 from being connected to the second lower electrode 181. Accordingly, the second insulating member 221 prevents an electrical short between the second upper electrode 201 and the second lower electrode 181.

The post 250 is formed on a portion of the rectangular support layer 170 where the first actuating portion 210 and the second actuating portion 211 are not formed (ie, the support 250). A portion of layer 170 separates parallel to support line 174). The pillar 250 supports the reflecting member 260.
Preferably, the reflection member 260 has a rectangular shape.

The central part of the reflection member 260 is supported by the pillar 250. Both sides of the reflection member 260 are formed in parallel with the upper portions of the first actuating portion 210 and the second actuating portion 211. Second air gap 31
0 is interposed between the both sides of the reflecting member 260 and the first and second actuating members 210 and 211. The reflecting member 260 is tilted by actuating the first actuating section 210 and the second actuating section 211. Therefore, the reflection member 2
Reference numeral 60 reflects incident light from a light source (not shown) at a predetermined angle.

Hereinafter, a method of manufacturing a thin film optical path adjusting device according to the present invention will be described in detail with reference to the drawings.

FIGS. 10A to 10G are views showing a manufacturing process of a thin-film optical path adjusting device according to the present invention. 10A to 10G, the same reference numerals are used for the same components as those in FIG.

Referring to FIG. 10A, after preparing the substrate 101 made of silicon, the substrate 101 is moved to an active region (ac) using a silicon partial oxidation method (LOCOS).
An isolation layer 125 is formed on the substrate 101 to separate the active region from a active region and a field region. Preferably, the substrate 101 is an N-type silicon wafer. Subsequently, a gate 115 is formed between the source 110 and the drain 105, and then a P ⁺ source 110 and a P ⁺ drain 105 are formed on the active region to form MxN (M and N are integers). P-MOS transistor 1
20 are formed. The P-MOS transistor 120 receives a first signal (image signal) from the outside and performs a switching operation. P-MO formed underneath
After forming an insulating layer 130 on the substrate 101 having the S transistor 120, an opening is formed in the insulating layer 130 having the drain 105 and the source 110 to expose a part of the drain 105 and the source 110. Each is formed. Titanium (Ti) is formed on the insulating layer 130 having the opening.
After forming a layer made of titanium nitride (TiN), tungsten (W) and nitride, the layer is patterned to form a first metal layer 135. In order to transmit the first signal, the first metal layer 135 includes a drain pad extending from the drain 105 of the P-MOS transistor 120 to the first anchor 171 supporting the support layer 170.

The first protection layer 140 is formed on the first metal layer 135 and the substrate 101. The first protective layer 140 is formed of a phosphor-silicate (PSG).
e glass). The first protective layer 140 is formed by a CVD method and has a thickness between about 8000 and 9000 degrees. The first protective layer 140 protects the substrate 101 having the P-MOS transistor during a subsequent process.

The second metal layer 145 is formed on the first protection layer 140. The second metal layer 145 includes a titanium layer and titanium nitride. In order to form the second metal layer 145, first, the titanium layer is formed on the first protective layer 140 using a sputtering method. At this time, the titanium layer has a thickness of about 300 to 500 degrees. Next, the titanium nitride layer is formed on the titanium layer using a PVD method. At this time, the titanium nitride layer has a thickness of about 1000 to 1200 degrees. The second metal layer 145 blocks light incident on the substrate 101 and prevents light leakage current from flowing through the substrate 101. Next, a portion of the second metal layer 145 having the drain pad where the drain pad is formed is etched to form the hole 147. The hole 147 separates the via contact 280 from the second metal layer 145.

The second protective layer 150 is formed on the second metal layer 145 and the hole 147. The second protective layer 150 is formed using PSG. The second protective layer 150 is formed by a chemical vapor deposition (CVD) method.
50 has a thickness of about 2000 to 3000 mm. The second protective layer 1
Reference numeral 50 protects the layers and the second metal layer 145 formed on the substrate 101 during the subsequent processes.

The anti-etching layer 155 may be formed of silicon dioxide (SiO ₂ ) or phosphorous pentoxide (SiO ₂ ).
A low temperature oxide layer (LTO) such as P ₂ O ₅ ) may be formed on the second passivation layer 150. The anti-etching layer 155 is formed using a low pressure chemical vapor deposition (LPCVD) method at a temperature between about 350 ° C. to 450 ° C., and the anti-etching layer 155 has a thickness of about 0.2 μm to 0.8 μm. Having a thickness.

The anti-etching layer 155 protects the layers formed on the substrate 101 and the second protective layer 150 during the subsequent processes. As a result, the substrate 1
01, the first metal layer 135, the first protective layer 140, the second metal layer 145,
The active matrix 100 including the second protective layer 150 and the etching prevention layer 155 is completed.

The first sacrificial layer 160 is formed on the etch-prevention layer 155 using polysilicon at a temperature of about 500 ° C. or less. The first sacrificial layer 160 is formed by an LPCVD method, and the first sacrificial layer 160 has a thickness of about 2.0 μm to 3.0 μm. In this case, since the first sacrificial layer 160 covers the upper part of the active matrix 100 having the MOS transistor 120 and the result layer,
The flatness of the first sacrificial layer 160 is poor. Therefore, the first sacrificial layer 16
The surface of No. 0 is flattened by spin-on glass (SOG) or chemical mechanical polishing (CMP), and the first sacrificial layer 160 has a thickness of about 1.1 μm.

FIG. 10B is a plan view illustrating the patterned first sacrificial layer 160. Referring to FIG. 10B, a first photoresist (not shown) is formed on the first sacrificial layer 16.
After the first metal layer 145 is coated and patterned on the first portion, the first portion of the second metal layer 145 where the hole 147 is formed in the first sacrificial layer 160 and the first portion adjacent to the first portion are formed. The second and third portions of the sacrificial layer 160 are etched such that the portions of the etch-prevention layer 155 are exposed. The first anchor 171 and the second anchors 172a and 172b are formed on the exposed portion of the etching prevention layer 155. The exposed portions of the anti-etching layer 155 are exposed as rectangular shapes separated by a predetermined interval. Next, the first photoresist is removed.

Referring to FIG. 10C, the first layer 169 has a rectangular shape.
55 is formed on the exposed portion and the first sacrificial layer 160. The first layer 169 is formed using a hard material such as a nitride or a metal. The first layer 169 is formed by an LPCVD method, and the first layer 169 has a thickness of about 0.1.
It has a thickness of about μm to 1.0 μm. The first layer 169 includes the support layer 17.
0, the support member 175 including the support line 174, the first anchor 171 and the two second anchors 172a and 172b is patterned. At this time, the first anchor 171 is located at the center of the exposed portion of the etching prevention layer 155, and the two second anchors 172a and 172b are located at other exposed portions of the etching prevention layer 155, respectively.

The lower electrode layer 179 is formed on the first layer 169. The lower electrode layer 1
79 is formed using an electrically conductive metal such as platinum (Pt), tantalum (Ta), or platinum-tantalum (Pt-Ta). The lower electrode layer 179 is formed by a sputtering method or a chemical vapor deposition (CVD) method.
It is formed to have a thickness of about μm. The lower electrode 179 is patterned to form the first lower electrode 180 and the second lower electrode 181 each having a corresponding protrusion.

The second layer 189 is formed on the lower electrode layer 179. The second layer 189 is
It is formed by using a piezoelectric material such as PZT (Pb (Zr, Ti) O ₃ ) or PLZT ((Pb, La) (Zr, Ti) O ₃ ), and is formed by a sol-gel (sol-gel) method and sputtering. It is formed using a method or a chemical vapor deposition (CVD) method, and has a thickness of about 0.1 to 1.0 μm. Preferably, the second layer 189 is made of PZT manufactured by a sol-gel method.
Is formed by sputtering to have a thickness of about 0.4 μm. Next, the second layer 189 is heat-treated using a rapid thermal processing (RTA) process to undergo a state transition. The second layer 189 is patterned to form the first active layer 190 and the second active layer 191 that are deformed by the first electric field and the second electric field, respectively.

An upper electrode layer 199 is formed on the second layer 189. The upper electrode layer 199 is formed using a metal having electrical conductivity, for example, tantalum, platinum, or silver. The upper electrode layer 199 is formed to have a thickness of about 0.1 to 1.0 μm using a sputtering method or a chemical vapor deposition method. The upper electrode layer 199 is patterned to form the first upper electrode 200 and the second upper electrode 201 separated by a predetermined interval.

Referring to FIG. 10D, a second photoresist (not shown) is coated on the upper electrode layer 199 by a spin coating method and patterned, and then the second photoresist is used as an etching mask. The upper electrode layer 199 is patterned to form the first upper electrode 200 and the second upper electrode 201 having a rectangular shape (see FIG. 7). The first upper electrode 200 and the second upper electrode 2
01 are formed in parallel with each other. The second signal (bias signal) is the common line 2
40, the first upper electrode 200 and the second upper electrode 201 are provided. As a result, the second photoresist is removed.

The second layer 189 is patterned to form the first active layer 190 and the second active layer 191 in the same process as the upper electrode layer 199. The first active layer 190 and the second active layer 191 are always formed in parallel with each other. In this case, the first active layer 190 and the second active layer 191 have a rectangular shape wider than the first upper electrode 200 and the second upper electrode 201, respectively, as shown in FIG.

The lower electrode layer 179 is patterned to form the first lower electrode 180 and the second lower electrode 181 in the same manner as the upper electrode layer 199. Each of the first lower electrode 180 and the second lower electrode 181 has a rectangular shape corresponding to the protrusion. Preferably, the first lower electrode 180 has an inverted L shape, and the second lower electrode 181 has an L shape corresponding to the first lower electrode 180. The first lower electrode 180 and the second lower electrode 181 are wider than the first active layer 190 and the second active layer 191 respectively.

When the first lower electrode 180 and the second lower electrode are formed, the common line 240 is patterned to form the support line 174.
Simultaneously formed in layer parts. The common line 240 is formed in a direction perpendicular to the first lower electrode 180 and the second lower electrode 181 as shown in FIG. The common line 240 is connected to the first and second lower electrodes 180 at predetermined intervals.
181. Accordingly, the common line 240 is not contacted with the first lower electrode 180 and the second lower electrode 181. As a result, the first actuating section 210 and the second actuating section 211 are completed. The first actuating unit 210 includes the first lower electrode 180, the first active layer 190, and the first upper electrode 200, and the second actuating unit 211 includes the second lower electrode 181, Second active layer 19
1 and the second upper electrode 201.

Then, the support layer 170, the support line 174, the first anchor 171
The first layer 169 is patterned to form the support member 175 including the two second anchors 172a and 172b. In this case, the first anchor 171 of the first layer 169 attached to the exposed portion of the etching prevention layer 155 is positioned at the center of the exposed portion of the etching prevention layer 155, and The second anchors 172a and 172b are located at other portions of the exposed portion of the etching prevention layer 155, respectively. The hole 147 of the second metal layer 145
Is formed below the first anchor 171. The support layer 170 has a rectangular ring shape and is formed as a whole with the support line 174 formed on the etching prevention layer 155. When the first sacrificial layer 160 is removed, the support member 175 is completed as shown in FIG.

The first anchor 171 is formed between the two arms of the support layer 170 having the rectangular ring shape. The two arms of the support layer 170 extend vertically from the support line 174. The first anchor 171 is attached to a center of the exposed portion of the etching prevention layer 155 having the drain pad of the first metal layer 135 below the first anchor 171. The first anchor 171 is integrally formed with the two arms of the support layer 170. The two second anchors 172a, 17
Numerals 2 are formed under the outer sides of the two arms of the support layer 170, respectively. The second anchors 172a and 172b are integrally formed with the two arms of the support layer 170, and are attached to the second and third exposed portions of the etching prevention layer 155, respectively. The first anchor 171 and the second anchors 172a and 172b are attached below the portion of the support layer 170 adjacent to the support line 174. The first
The actuating part 210 and the second actuating part 211 are respectively formed on the upper part of the two arms of the support layer 170. As a result, the first anchor 171 is formed below the first actuating portion 210 and the second actuating portion 211, and the second anchors 172a and 172b are connected to the first and second actuating portions. It is formed below the outside of the actuating portions 210 and 211, respectively. The first anchor 171 and the second anchors 172a and 172b support the supporting layer 170 together, and thus, the first anchor 171 and the second
The anchors 172a and 172b support the first actuating section 210 and the second actuating section 211, respectively.

Referring to FIG. 10E, a third photoresist (not shown) is coated on the support member 175, the first actuating portion 210 and the second actuating portion 211, and then the common photoresist is applied. The third photoresist is patterned so that a portion of the line 240, the support member 175, the first upper electrode 200, and the second upper electrode 201 is exposed. At this time, the first lower electrode 180
And the lower electrode 181 are exposed at the same time.

Next, silicon dioxide (SiO ₂ ) or phosphorus pentoxide (P ₂ O ₅ ) is deposited on the exposed portions of the support member 175, the first upper electrode 200, and the second upper electrode 201. After the LTO is formed, the first insulating member 220 and the second insulating member 22 are patterned by patterning the LTO using an LPCVD method.
1 is formed. The first insulating member 220 is formed from a portion of the first upper electrode 200 to a portion of the support layer 170 through the first active layer 190 and the first lower electrode 180. The second insulating member 221 is formed from a part of the second upper electrode 200 to a part of the support layer 170 through the second active layer 190 and the second lower electrode 180. The first insulation member 200 and the second insulation member 221 have a thickness of about 0.2 to 0.4 μm, preferably 0.3 μm.

FIG. 10F is a cross-sectional view illustrating the via contact 280. Referring to FIG. 10F, a via hole 270 is formed by etching a portion of the etch protection layer 155, the second protection layer 150, and the first protection layer 140 to form the first through the hole 147 of the second metal layer 145. A portion from the anchor 171 to the drain pad of the first metal layer 135 is formed. Thereafter, the via contact 280 is formed inside the via hole 270. The first lower electrode connecting member 290 and the second lower electrode connecting member 291 are connected to the via hole 27.
0 to the protrusions of the first lower electrode 180 and the second lower electrode 181. At this time, the first lower electrode connecting member 230 is connected to the first insulating member 220.
And the first upper electrode 20 from the common line 240 through the support layer 170.
0 is formed. The second upper electrode connecting member 231 is formed from the common line 240 to a portion of the second upper electrode 201 through the second insulating member 221 and the support layer 170 as shown in FIG. The first upper electrode connecting member 23
0 and the second upper electrode connecting member 231 are formed in parallel with each other.

The via contact 280, the first lower electrode connecting member 290, the second lower electrode connecting member 291, the first upper electrode connecting member 230, and the second upper electrode connecting member 231 are made of platinum, tantalum or platinum. It is formed of a metal having electrical conductivity such as tantalum using a sputtering method or a chemical vapor deposition (CVD) method. The via contact 280, the first lower electrode connecting member 290, the second
The lower electrode connecting member 291, the first upper electrode connecting member 230, and the second upper electrode connecting member 231 each have a thickness of about 0.1 to 0.2 μm. The first upper electrode connecting member 230 and the second upper electrode connecting member 231 connect a common line 240 to the first upper electrode 200 and the second upper electrode 201. The protrusion of the first lower electrode 180 is connected to the drain pad through the via contact 280 and the first lower electrode connection member 290. The second lower electrode 1
The protrusion 81 is connected to the drain pad through the contact 280 and the second lower electrode connection member 291.

Referring to FIG. 10G, a second sacrificial layer 300 is formed on the first actuating portion 210, the second actuating portion 211, and the support member 175. The second sacrificial layer 300 is formed using an LPCVD method using polysilicon. The second sacrificial layer 300 sufficiently covers the first actuating portion 210 and the second actuating portion 211. Subsequently, the surface of the second sacrificial layer 300 is planarized by a CMP method,
00 has a flat surface.

Then, the sacrificial layer 3 is formed to form the reflection member 260 and the pillar 250.
00 is etched to expose a portion of the support layer 170 that is separated in a direction parallel to the support line 174. That is, the first actuating section 2
10 and the support layer 1 on which the second actuating portion 211 is not formed.
The portion of 70 is exposed. The pillar 250 and the reflection member 260 are simultaneously formed by patterning a metal layer formed on the exposed portion of the support layer 170 and the sacrificial layer 300. The column 250 and the reflection member 2
60 is formed by using aluminum by a sputtering method or a CVD method. The central part of the reflecting member 260 is supported by the pillar 250, and the side part of the reflecting member 260 is formed in parallel with the first actuating part 210 and the upper part of the second actuating part 211. Preferably, the reflection member 260 has a rectangular shape.

Accordingly, the first sacrificial layer 160 and the second sacrificial layer 300 are removed by using fluorinated bromine (BrF ₃ or BrF ₅ ) or xenon fluorinated (XeF ₂ , XeF ₄ or XeF ₆ ). Thereafter, when washing and drying are performed, the thin-film type optical path adjusting device shown in FIG. 7 is completed. The second air gap 310 is formed in the second sacrificial layer 30.
The first air gap 165 is formed at a portion where the first sacrificial layer 160 is located.

The operation of the thin-film optical path adjusting device according to the present invention will be described.

In the thin film type optical path adjusting device according to the present invention, the first signal is the MOS transistor 120 provided on the substrate 101, the drain pad of the first metal layer 135, the via contact 280, and the first and second signals. The first and second lower electrodes 180 and 181 are provided from the outside through the second lower electrode connecting members 290 and 291. At this time, the second signal is externally provided to the first and second upper electrodes 200 and 201 through the common line 240 and the first and second upper electrode connecting members 230 and 231. As a result, the first electric field is generated between the first upper electrode 200 and the first lower electrode 180, and the second electric field is generated by the second electric field.
It is generated between the upper electrode 201 and the second lower electrode 181. The first active layer 1 formed between the first upper electrode 200 and the first lower electrode 180
90 is deformed by the first electric field, and the second active layer 191 formed between the second upper electrode 201 and the second lower electrode 181 is deformed by the second electric field. The first and second active layers 190 and 191 are respectively deformed in directions perpendicular to the first and second electric fields. The first active layer 190
The first actuating section 210 having a second active layer 191
The second actuating portion 211 having the shape is actuated in a direction opposite to the position of the support layer 170. That is, the first and second actuating portions 210 and 211 are actuated upward, and the support layer 170 attached to the first and second lower electrodes 180 and 181 also has the first and second actuation portions.
Actuating sections 210 and 211 are actuated upward according to the actuating action.

The reflection member 260 is supported by the pillar 250 formed on a part of the support layer 170. The reflecting member 260 that reflects the incident light from the light source is the first member.
And the second actuating sections 210 and 211. As a result, the reflection member 260 reflects the light to the upper part of the screen, and an image is projected on the screen.

In the thin film type optical path adjusting device according to the present invention, the support member includes the support line, the support layer having a rectangular ring shape, the first anchor, and the second anchor. The first and second actuating portions are respectively formed on two arms of the support layer formed in the shape of the rectangular ring. The anchor supporting the actuating portion is formed in a direction perpendicular to the actuating. Since no stress concentration line is generated between the anchor and the actuating portion, the actuating portion is not tilted initially and has a horizontal surface. Therefore, the reflection angle of the reflection member formed on the actuating portion can be maintained constant, the light efficiency can be increased, and the quality of the image projected on the screen can be improved.

Further, an electrode-like short-circuit generated between the upper electrode and the lower electrode is prevented by the insulating member. Therefore, defects at pixel points of the thin film type optical path adjusting device are effectively reduced.

Although the present invention has been described with reference to the preferred embodiments of the present invention, those skilled in the art will appreciate that they do not depart from the spirit and scope of the present invention as set forth in the following claims. It can be understood that the present invention can be variously modified and changed.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a conventional AMA engine system.

FIG. 2 is a plan view of a thin-film optical path adjusting device described in the applicant's prior application.

FIG. 3 is a perspective view of the thin-film optical path adjusting device shown in FIG. 2;

[4] The thin film AMA illustrated in FIG. 3 is a sectional view taken along the A ₁ -A ₂ line.

FIG. 5A is a view showing a manufacturing process of the thin-film optical path adjusting device shown in FIG. 4;

5B is a view showing a manufacturing process of the thin-film optical path adjusting device shown in FIG. 4;

FIG. 5C is a view showing the manufacturing process of the thin-film optical path adjusting device shown in FIG. 4;

5D is a view showing a manufacturing process of the thin-film optical path adjusting device shown in FIG. 4;

FIG. 6 is a plan view of a thin-film optical path adjusting device according to the present invention.

FIG. 7 is a perspective view of the thin-film optical path adjusting device shown in FIG. 6;

8 is a cross-sectional view of the thin film AMA illustrated taken along the B ₁ -B ₂ line in FIG.

9 is a cross-sectional view of the thin film AMA illustrated taken along a C ₁ -C ₂ line in FIG.

FIG. 10A is a manufacturing process diagram of the thin-film type optical path adjusting device according to the present invention.

FIG. 10B is a manufacturing process diagram of the thin-film optical path adjusting device according to the present invention.

FIG. 10C is a view showing the manufacturing process of the thin-film optical path adjusting device according to the present invention.

FIG. 10D is a view showing the manufacturing process of the thin-film optical path adjusting device according to the present invention;

Claims (20)

[Claims] 1. An active matrix including a substrate having a built-in MOS transistor for switching operation and a first metal layer having a drain pad extending from a drain of the MOS for transmitting a first signal; A support line formed at the top of the matrix, 2) a support layer integrally formed with the support line and having a square ring shape, and 3) between the active matrix and a portion of the support layer adjacent to the support line. A) a support means including first and second anchors respectively formed on the first portion of the support layer formed perpendicular to the support line for receiving the first signal; 1) a lower electrode, b) a first upper electrode corresponding to the first lower electrode for receiving the second signal and generating a first electric field; And c) formed between the first lower electrode and the first upper electrode,
A first actuating portion including a first deformable layer deformed by an electric field; i) formed on a second portion of the support layer formed to be perpendicular to the support line and receiving the first signal; A second upper electrode corresponding to the second lower electrode for receiving the second signal and generating a second electric field; and iii) the second lower electrode and the second lower electrode. A second actuating portion formed between the first electrode and the second electrode, the second actuating portion including a second deformable layer deformed by the second electric field; and on the first actuating portion and the second actuating portion. And a reflecting means for reflecting light. 2. The active matrix includes: a first protection layer formed on the substrate and the first metal layer; a second metal layer formed on the first protection layer; and the second metal layer. The device of claim 1, further comprising: a second protective layer formed on the second protective layer; and an anti-etching layer formed on the second protective layer. 3. The first lower electrode has a rectangular shape having a protrusion, and the first lower electrode has a rectangular shape.
The deformation layer has a rectangle smaller than the first lower electrode, the first upper electrode has a rectangle smaller than the first deformation layer, and the second lower electrode corresponds to a protrusion of the first lower electrode. The second deformable layer has a rectangle smaller than the second lower electrode, and the second upper electrode has a rectangle smaller than the second deformable layer. The thin-film optical path adjusting device according to claim 1. 4. The method according to claim 3, wherein the first lower electrode has an inverted L-shape, and the second lower electrode has an L-shape corresponding to the first lower electrode. 3. The thin-film type optical path adjusting device according to item 1. 5. The first anchor is connected to the first actuating portion and the second actuator.
The drain pad, which is a lower portion between the actuating portions, is formed by being attached to a first portion of the active matrix in which the drain pad is formed, and the anchor is provided with the first actuating portion and the second actuating portion. 4. The thin film according to claim 3, wherein the thin film is formed on an outer lower portion of the active matrix, and is formed on the second and third portions of the active matrix adjacent to the first portion of the active matrix. Type optical path adjustment device. 6. A via contact formed from the first anchor to the drain pad for transmitting the first signal from the drain pad to the first lower electrode and the second lower electrode; A first lower electrode formed up to the protrusion of the first lower electrode;
A lower electrode connecting member; and a second electrode formed from the via contact to the protrusion of the second lower electrode.
The apparatus of claim 5, further comprising a lower electrode connecting member. 7. The via contact, the first lower electrode connecting member, and the second lower electrode connecting member are formed of an electrically conductive metal such as silver, platinum, tantalum or platinum-tantalum. 7. The thin-film optical path adjusting device according to claim 6, wherein: 8. A common line formed on the support line for transmitting the second signal; formed from a part of the first upper electrode to a part of the support layer through a part of the first lower electrode. First upper electrode connecting means formed from the common line to the first upper electrode through the first insulating layer; from a part of the second upper electrode through a part of the second lower electrode A second insulating means formed up to a part of the support layer; and a second upper electrode connecting means formed from the common line to the second upper electrode through the second insulating layer. Item 2. A thin-film type optical path adjusting device according to Item 1. 9. The thin-film optical path adjusting device according to claim 8, wherein the first insulating means and the second insulating means are formed of amorphous silicon. 10. The thin-film optical path adjusting device according to claim 8, wherein the first insulating means and the second insulating means are formed of a low-temperature oxide film. 11. The first insulating means and the second insulating means are formed of silicon dioxide (
The thin-film optical path adjusting device according to claim 10, wherein the thin-film optical path adjusting device is made of SiO ₂ ) or phosphorus pentoxide (P ₂ O ₅ ). 12. The first upper electrode connecting member and the second upper electrode connecting member are made of an electrically conductive metal such as silver, platinum, tantalum or platinum-tantalum. The thin-film optical path adjusting device according to claim 8. 13. A post formed between the central portion of the reflection means and a portion of the support layer and spaced apart from the support line and supporting the reflection means.
The thin-film optical path adjusting device according to claim 8, further comprising: 14. An active matrix including a substrate having a built-in MOS transistor for switching operation and a first metal layer having a drain pad extending from a drain of the MOS for transmitting a first signal; 1) the active matrix; A support line formed at the top of the matrix, 2) a support layer integrally formed with the support line and having a square ring shape, and 3) between the active matrix and a portion of the support layer adjacent to the support line. A) a support means including first and second anchors respectively formed on the support layer; a) a first portion of the support layer formed perpendicular to the support line for receiving the first signal and projecting; A first lower electrode having: b) the second lower electrode
A first corresponding to the first lower electrode for receiving a signal and generating a first electric field;
An upper electrode, and c) formed between the first lower electrode and the first upper electrode;
A first actuating portion including a first deformable layer deformed by the first electric field; i) a first actuating portion formed on a second portion of the support layer formed to be perpendicular to the support line; A second lower electrode receiving a signal and having a protrusion corresponding to the protrusion of the first lower electrode; ii) corresponding to the second lower electrode for receiving the second signal and generating a second electric field. A second actuating portion formed between the second lower electrode and the second upper electrode and including a second deformation layer deformed by the second electric field; and the support. A common line formed on the line for transmitting the second signal; first upper electrode connecting means formed from the common line to the first upper electrode; formed from the common line to the second upper electrode; Was Second upper electrode connecting means;
The thin-film type optical path adjusting device may further include a reflection unit formed on the first and second actuating units to reflect light. 15. The first anchor is attached to a first portion of the active matrix in which the drain pad is formed, which is a lower portion between the first actuating portion and the second actuating portion. Wherein the anchors are formed at lower portions outside the first actuating portion and the second actuating portion, respectively, and the second and third portions of the active matrix adjacent to the first portion of the active matrix are formed. 15. The thin-film type optical path adjusting device according to claim 14, wherein each of the thin-film type optical path adjusting devices is formed by being attached to a portion. 16. A via formed in a via hole formed from the first anchor to the drain pad, and for transmitting the first signal from the drain pad to the first lower electrode and the second lower electrode. A first contact formed from the via contact to the protrusion of the first lower electrode;
A lower electrode connecting member; and a second electrode formed from the via contact to the protrusion of the second lower electrode.
The apparatus of claim 14, further comprising a lower electrode connecting member. 17. A first insulating means formed under the first upper electrode connection member from a part of the first upper electrode to a part of the support layer through a part of the first lower electrode; and 15. The thin film according to claim 14, further comprising a second insulating means formed under the second upper electrode connecting means from a portion of the lower electrode to a portion of the support layer from the second upper electrode. Type optical path adjustment device. 18. The thin film according to claim 17, wherein the first insulating means and the second insulating means are formed of amorphous silicon or low-temperature oxide such as silicon oxide or phosphorus pentoxide. Type optical path adjustment device. 19. An active matrix including a substrate having a built-in MOS transistor for switching operation and a first metal layer having a drain pad extending from a drain of the MOS for transmitting a first signal; 1) The active matrix A support line formed at the top of the matrix, 2) a support layer integrally formed with the support line and having a square ring shape, and 3) between the active matrix and a portion of the support layer adjacent to the support line. A) a support means including first and second anchors respectively formed on the support layer; a) a first portion of the support layer formed perpendicular to the support line for receiving the first signal and projecting; A first lower electrode having: b) the second lower electrode
A first corresponding to the first lower electrode for receiving a signal and generating a first electric field;
An upper electrode, and c) formed between the first lower electrode and the first upper electrode;
A first actuating portion including a first deformable layer deformed by the first electric field; i) a first actuating portion formed on a second portion of the support layer formed to be perpendicular to the support line; A second lower electrode receiving a signal and having a protrusion corresponding to the protrusion of the first lower electrode; ii) corresponding to the second lower electrode for receiving the second signal and generating a second electric field. A second upper electrode, and iii) a second actuating portion formed between the second lower electrode and the second upper electrode and including a second deformation layer deformed by the second electric field; A via contact formed in a via hole formed from one anchor to the drain pad, for transmitting the first signal from the drain pad to the first lower electrode and the second lower electrode; The formed from IA contact to the protruding portion of the first lower electrode 1
A lower electrode connecting member; a second electrode formed from the via contact to the protrusion of the second lower electrode;
A lower electrode connecting member; a common line formed on the support line for transmitting the second signal; a first upper electrode connecting means formed from the common line to the first upper electrode; Second upper electrode connecting means formed up to the second upper electrode;
The thin-film type optical path adjusting device may further include a reflection unit formed on the first and second actuating units to reflect light. 20. The method according to claim 19, wherein the first insulating means and the second insulating means are formed of amorphous silicon or low-temperature oxide such as silicon dioxide or phosphorus pentoxide. Thin-film optical path adjusting device.