JP2002535843A5 - - Google Patents
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- JP2002535843A5 JP2002535843A5 JP2000594606A JP2000594606A JP2002535843A5 JP 2002535843 A5 JP2002535843 A5 JP 2002535843A5 JP 2000594606 A JP2000594606 A JP 2000594606A JP 2000594606 A JP2000594606 A JP 2000594606A JP 2002535843 A5 JP2002535843 A5 JP 2002535843A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- pad
- layer
- less
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000005498 polishing Methods 0.000 description 156
- 239000010410 layer Substances 0.000 description 62
- 238000000034 method Methods 0.000 description 28
- 239000000463 material Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 21
- 239000012530 fluid Substances 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 15
- 230000003750 conditioning effect Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 229920003023 plastic Polymers 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- -1 but not limited to Substances 0.000 description 5
- 238000007641 inkjet printing Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000009969 flowable effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920002492 poly(sulfone) Polymers 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- 229920000915 polyvinyl chloride Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 229920001038 ethylene copolymer Polymers 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000004816 latex Substances 0.000 description 2
- 229920000126 latex Polymers 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 150000003457 sulfones Chemical class 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical class OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11654799P | 1999-01-21 | 1999-01-21 | |
| US60/116,547 | 1999-01-21 | ||
| PCT/US2000/001495 WO2000043159A1 (en) | 1999-01-21 | 2000-01-21 | Improved polishing pads and methods relating thereto |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002535843A JP2002535843A (ja) | 2002-10-22 |
| JP2002535843A5 true JP2002535843A5 (enExample) | 2006-12-28 |
Family
ID=22367847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000594606A Pending JP2002535843A (ja) | 1999-01-21 | 2000-01-21 | 改良された研磨パッド、及び、これに関連する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6354915B1 (enExample) |
| EP (1) | EP1161322A4 (enExample) |
| JP (1) | JP2002535843A (enExample) |
| KR (1) | KR100585480B1 (enExample) |
| CN (1) | CN1137013C (enExample) |
| WO (1) | WO2000043159A1 (enExample) |
Families Citing this family (94)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60109601T2 (de) * | 2000-05-27 | 2006-02-09 | Rohm and Haas Electronic Materials CMP Holdings, Inc., Wilmington | Rillen-polierkissen zum chemisch-mechanischen planarisieren |
| US6592443B1 (en) * | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
| SE0003550L (sv) * | 2000-10-03 | 2002-04-04 | Pergo Ab | Förfarande för framställning av ytelement |
| US6688956B1 (en) | 2000-11-29 | 2004-02-10 | Psiloquest Inc. | Substrate polishing device and method |
| US7059946B1 (en) | 2000-11-29 | 2006-06-13 | Psiloquest Inc. | Compacted polishing pads for improved chemical mechanical polishing longevity |
| US6684704B1 (en) * | 2002-09-12 | 2004-02-03 | Psiloquest, Inc. | Measuring the surface properties of polishing pads using ultrasonic reflectance |
| US6706383B1 (en) | 2001-11-27 | 2004-03-16 | Psiloquest, Inc. | Polishing pad support that improves polishing performance and longevity |
| US20050266226A1 (en) * | 2000-11-29 | 2005-12-01 | Psiloquest | Chemical mechanical polishing pad and method for selective metal and barrier polishing |
| US6596388B1 (en) | 2000-11-29 | 2003-07-22 | Psiloquest | Method of introducing organic and inorganic grafted compounds throughout a thermoplastic polishing pad using a supercritical fluid and applications therefor |
| US6579604B2 (en) | 2000-11-29 | 2003-06-17 | Psiloquest Inc. | Method of altering and preserving the surface properties of a polishing pad and specific applications therefor |
| US6846225B2 (en) * | 2000-11-29 | 2005-01-25 | Psiloquest, Inc. | Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor |
| US6764574B1 (en) | 2001-03-06 | 2004-07-20 | Psiloquest | Polishing pad composition and method of use |
| US6575823B1 (en) | 2001-03-06 | 2003-06-10 | Psiloquest Inc. | Polishing pad and method for in situ delivery of chemical mechanical polishing slurry modifiers and applications thereof |
| US6568997B2 (en) | 2001-04-05 | 2003-05-27 | Rodel Holdings, Inc. | CMP polishing composition for semiconductor devices containing organic polymer particles |
| KR100858392B1 (ko) * | 2001-04-25 | 2008-09-11 | 제이에스알 가부시끼가이샤 | 반도체 웨이퍼용 연마 패드와, 이를 구비한 반도체웨이퍼용 연마 적층체와, 반도체 웨이퍼의 연마 방법 |
| US6818301B2 (en) * | 2001-06-01 | 2004-11-16 | Psiloquest Inc. | Thermal management with filled polymeric polishing pads and applications therefor |
| JP4686912B2 (ja) * | 2001-06-15 | 2011-05-25 | 東レ株式会社 | 研磨パッド |
| JP2003100682A (ja) * | 2001-09-25 | 2003-04-04 | Jsr Corp | 半導体ウエハ用研磨パッド |
| US20030207661A1 (en) * | 2002-05-01 | 2003-11-06 | Alexander Tregub | Annealing of CMP polishing pads |
| US6811467B1 (en) | 2002-09-09 | 2004-11-02 | Seagate Technology Llc | Methods and apparatus for polishing glass substrates |
| US6838169B2 (en) * | 2002-09-11 | 2005-01-04 | Psiloquest, Inc. | Polishing pad resistant to delamination |
| AU2003272674A1 (en) * | 2002-09-25 | 2004-04-19 | Ppg Industries Ohio, Inc. | Polishing pad for planarization |
| EP1594656B1 (en) * | 2003-02-18 | 2007-09-12 | Parker-Hannifin Corporation | Polishing article for electro-chemical mechanical polishing |
| US20040192178A1 (en) * | 2003-03-28 | 2004-09-30 | Barak Yardeni | Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads |
| US6884156B2 (en) * | 2003-06-17 | 2005-04-26 | Cabot Microelectronics Corporation | Multi-layer polishing pad material for CMP |
| US6852982B1 (en) * | 2003-07-14 | 2005-02-08 | Fei Company | Magnetic lens |
| US20050055885A1 (en) * | 2003-09-15 | 2005-03-17 | Psiloquest | Polishing pad for chemical mechanical polishing |
| US8066552B2 (en) * | 2003-10-03 | 2011-11-29 | Applied Materials, Inc. | Multi-layer polishing pad for low-pressure polishing |
| US7654885B2 (en) * | 2003-10-03 | 2010-02-02 | Applied Materials, Inc. | Multi-layer polishing pad |
| CN1301184C (zh) * | 2003-12-16 | 2007-02-21 | 汪开庆 | 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法 |
| EP1561541B1 (en) * | 2004-02-05 | 2008-04-30 | JSR Corporation | Chemical mechanical polishing pad and polishing process |
| KR100545795B1 (ko) * | 2004-02-17 | 2006-01-24 | 에스케이씨 주식회사 | 연마 패드의 기재 패드와 이를 이용한 다층 패드 |
| US7059936B2 (en) * | 2004-03-23 | 2006-06-13 | Cabot Microelectronics Corporation | Low surface energy CMP pad |
| US7198549B2 (en) * | 2004-06-16 | 2007-04-03 | Cabot Microelectronics Corporation | Continuous contour polishing of a multi-material surface |
| US20060046064A1 (en) * | 2004-08-25 | 2006-03-02 | Dwaine Halberg | Method of improving removal rate of pads |
| US20060099891A1 (en) * | 2004-11-09 | 2006-05-11 | Peter Renteln | Method of chemical mechanical polishing, and a pad provided therefore |
| JP4475404B2 (ja) * | 2004-10-14 | 2010-06-09 | Ｊｓｒ株式会社 | 研磨パッド |
| US20060154579A1 (en) * | 2005-01-12 | 2006-07-13 | Psiloquest | Thermoplastic chemical mechanical polishing pad and method of manufacture |
| JP5250934B2 (ja) * | 2005-01-31 | 2013-07-31 | 東レ株式会社 | 改善された研磨パッドの製造方法 |
| KR20060099398A (ko) * | 2005-03-08 | 2006-09-19 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 수계 연마 패드 및 제조 방법 |
| KR100909605B1 (ko) | 2005-03-08 | 2009-07-27 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 그 제조 방법 |
| KR100949560B1 (ko) | 2005-05-17 | 2010-03-25 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
| KR100709392B1 (ko) * | 2005-07-20 | 2007-04-20 | 에스케이씨 주식회사 | 액상의 비닐계 모노머가 상호침투 가교된 형태를 갖는폴리우레탄 연마 패드 |
| JP4884725B2 (ja) | 2005-08-30 | 2012-02-29 | 東洋ゴム工業株式会社 | 研磨パッド |
| JP4898172B2 (ja) * | 2005-09-08 | 2012-03-14 | 日本ミクロコーティング株式会社 | 研磨パッド及びその製造方法並びに研磨方法 |
| TW200720017A (en) * | 2005-09-19 | 2007-06-01 | Rohm & Haas Elect Mat | Water-based polishing pads having improved adhesion properties and methods of manufacture |
| JP5031236B2 (ja) | 2006-01-10 | 2012-09-19 | 東洋ゴム工業株式会社 | 研磨パッド |
| CN102990530B (zh) | 2006-07-14 | 2016-02-10 | 圣戈本磨料股份有限公司 | 无背衬研磨制品 |
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