JP2002530205A5 - - Google Patents

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Publication number
JP2002530205A5
JP2002530205A5 JP2000583667A JP2000583667A JP2002530205A5 JP 2002530205 A5 JP2002530205 A5 JP 2002530205A5 JP 2000583667 A JP2000583667 A JP 2000583667A JP 2000583667 A JP2000583667 A JP 2000583667A JP 2002530205 A5 JP2002530205 A5 JP 2002530205A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000583667A
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Japanese (ja)
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JP2002530205A (ja
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Publication date
Priority claimed from US09/197,127 external-priority patent/US6120976A/en
Application filed filed Critical
Publication of JP2002530205A publication Critical patent/JP2002530205A/ja
Publication of JP2002530205A5 publication Critical patent/JP2002530205A5/ja
Withdrawn legal-status Critical Current

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JP2000583667A 1998-11-20 1999-03-17 レーザーアブレーションによる特徴部形成装置 Withdrawn JP2002530205A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/197,127 1998-11-20
US09/197,127 US6120976A (en) 1998-11-20 1998-11-20 Laser ablated feature formation method
PCT/US1999/005771 WO2000030800A1 (en) 1998-11-20 1999-03-17 Laser ablated feature formation device

Publications (2)

Publication Number Publication Date
JP2002530205A JP2002530205A (ja) 2002-09-17
JP2002530205A5 true JP2002530205A5 (enExample) 2006-05-11

Family

ID=22728155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000583667A Withdrawn JP2002530205A (ja) 1998-11-20 1999-03-17 レーザーアブレーションによる特徴部形成装置

Country Status (7)

Country Link
US (1) US6120976A (enExample)
EP (1) EP1131183B1 (enExample)
JP (1) JP2002530205A (enExample)
CN (1) CN1326392A (enExample)
AU (1) AU3187999A (enExample)
DE (1) DE69904753T2 (enExample)
WO (1) WO2000030800A1 (enExample)

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US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
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