JP2002526377A5 - - Google Patents

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Publication number
JP2002526377A5
JP2002526377A5 JP2000574754A JP2000574754A JP2002526377A5 JP 2002526377 A5 JP2002526377 A5 JP 2002526377A5 JP 2000574754 A JP2000574754 A JP 2000574754A JP 2000574754 A JP2000574754 A JP 2000574754A JP 2002526377 A5 JP2002526377 A5 JP 2002526377A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000574754A
Other versions
JP2002526377A (ja
Filing date
Publication date
Priority claimed from US09/167,747 external-priority patent/US6039801A/en
Application filed filed Critical
Publication of JP2002526377A publication Critical patent/JP2002526377A/ja
Publication of JP2002526377A5 publication Critical patent/JP2002526377A5/ja
Pending legal-status Critical Current

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JP2000574754A 1998-10-07 1999-09-28 結晶引上装置の連続酸化法 Pending JP2002526377A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/167,747 1998-10-07
US09/167,747 US6039801A (en) 1998-10-07 1998-10-07 Continuous oxidation process for crystal pulling apparatus
PCT/US1999/022380 WO2000020664A1 (en) 1998-10-07 1999-09-28 Continuous oxidation process for crystal pulling apparatus

Publications (2)

Publication Number Publication Date
JP2002526377A JP2002526377A (ja) 2002-08-20
JP2002526377A5 true JP2002526377A5 (ja) 2005-12-22

Family

ID=22608654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000574754A Pending JP2002526377A (ja) 1998-10-07 1999-09-28 結晶引上装置の連続酸化法

Country Status (8)

Country Link
US (2) US6039801A (ja)
EP (1) EP1123426B1 (ja)
JP (1) JP2002526377A (ja)
KR (1) KR20010079936A (ja)
CN (1) CN1208504C (ja)
DE (1) DE69908800T2 (ja)
TW (1) TW467973B (ja)
WO (1) WO2000020664A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6039801A (en) 1998-10-07 2000-03-21 Memc Electronic Materials, Inc. Continuous oxidation process for crystal pulling apparatus
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
EP2251462B1 (en) * 2001-09-28 2013-01-02 Komatsu Denshi Kinzoku Kabushiki Kaisha Single crystal semiconductor manufacturing apparatus and manufacturing method
KR20040039012A (ko) * 2002-10-30 2004-05-10 주식회사 실트론 실리콘 잉곳의 성장 장치
TWI265217B (en) * 2002-11-14 2006-11-01 Komatsu Denshi Kinzoku Kk Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal
JP2005289776A (ja) * 2004-04-05 2005-10-20 Canon Inc 結晶製造方法および結晶製造装置
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
JP4730937B2 (ja) * 2004-12-13 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法
CN100415944C (zh) * 2005-12-26 2008-09-03 北京有色金属研究总院 一种清除直拉硅单晶炉内SiO的方法及装置
DE102006002682A1 (de) * 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe
US8790460B2 (en) * 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid
JP2012066948A (ja) * 2010-09-21 2012-04-05 Covalent Materials Corp シリコン単結晶引上装置のクリーニング方法
US9114989B2 (en) 2011-12-07 2015-08-25 Praxair Technology, Inc. Inert gas recovery and recycle for silicon crystal growth pulling process
KR101528055B1 (ko) * 2013-11-25 2015-06-11 주식회사 엘지실트론 잉곳 성장 장치
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
JPH02263793A (ja) * 1989-04-05 1990-10-26 Nippon Steel Corp 酸化誘起積層欠陥の発生し難いシリコン単結晶及びその製造方法
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
JP2888089B2 (ja) * 1992-03-31 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ装置
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
JPH09165291A (ja) * 1995-12-14 1997-06-24 Komatsu Electron Metals Co Ltd 単結晶製造方法およびその装置
DE19628851A1 (de) * 1996-07-17 1998-01-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6039801A (en) 1998-10-07 2000-03-21 Memc Electronic Materials, Inc. Continuous oxidation process for crystal pulling apparatus

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