JP2002525212A - マイクロ装置でのブリッジの形成 - Google Patents
マイクロ装置でのブリッジの形成Info
- Publication number
- JP2002525212A JP2002525212A JP2000570590A JP2000570590A JP2002525212A JP 2002525212 A JP2002525212 A JP 2002525212A JP 2000570590 A JP2000570590 A JP 2000570590A JP 2000570590 A JP2000570590 A JP 2000570590A JP 2002525212 A JP2002525212 A JP 2002525212A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- filling
- photoresist
- providing
- filling material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 241
- 238000000034 method Methods 0.000 claims abstract description 115
- 239000000725 suspension Substances 0.000 claims abstract description 79
- 239000000945 filler Substances 0.000 claims abstract description 44
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 238000005459 micromachining Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000009977 dual effect Effects 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 3
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 3
- -1 aluminum silicon copper Chemical compound 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims 4
- 239000002861 polymer material Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 238000009987 spinning Methods 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000004377 microelectronic Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 229910008599 TiW Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 210000003041 ligament Anatomy 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
- G01C19/5677—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional vibrators, e.g. ring-shaped vibrators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5705—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis
- G01C19/5712—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Defrosting Systems (AREA)
- Treatment And Processing Of Natural Fur Or Leather (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Gyroscopes (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9819817.9 | 1998-09-12 | ||
| GBGB9819817.9A GB9819817D0 (en) | 1998-09-12 | 1998-09-12 | Improvements relating to micro-machining |
| PCT/GB1999/003026 WO2000016105A1 (en) | 1998-09-12 | 1999-09-13 | Formation of a bridge in a micro-device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002525212A true JP2002525212A (ja) | 2002-08-13 |
| JP2002525212A5 JP2002525212A5 (enExample) | 2006-10-19 |
Family
ID=10838705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000570590A Pending JP2002525212A (ja) | 1998-09-12 | 1999-09-13 | マイクロ装置でのブリッジの形成 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6846426B1 (enExample) |
| EP (1) | EP1116038B1 (enExample) |
| JP (1) | JP2002525212A (enExample) |
| KR (1) | KR20010075057A (enExample) |
| AT (1) | ATE508370T1 (enExample) |
| AU (1) | AU5873899A (enExample) |
| CA (1) | CA2343308A1 (enExample) |
| DE (1) | DE69943412D1 (enExample) |
| GB (1) | GB9819817D0 (enExample) |
| NO (1) | NO322454B1 (enExample) |
| WO (1) | WO2000016105A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006099057A (ja) * | 2004-09-27 | 2006-04-13 | Idc Llc | 基板をパッケージングするための方法及び装置 |
| JP2018531803A (ja) * | 2015-09-30 | 2018-11-01 | メムズ ドライブ, インク.Mems Drive, Inc. | 簡略化されたｍｅｍｓデバイスの製造プロセス |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100837987B1 (ko) * | 2000-06-21 | 2008-06-16 | 텍사스 인스트루먼츠 인코포레이티드 | 용해 수지를 이용하는 마이크로 전기기계 시스템 장치의재코팅 방법 |
| ITTO20020793A1 (it) | 2002-09-12 | 2004-03-13 | Olivetti Jet Spa | Metodo per ricoprire selettivamente una superficie microlavorata. |
| US7573547B2 (en) | 2004-09-27 | 2009-08-11 | Idc, Llc | System and method for protecting micro-structure of display array using spacers in gap within display device |
| US8685778B2 (en) | 2010-06-25 | 2014-04-01 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05501615A (ja) * | 1989-09-26 | 1993-03-25 | ブリテイッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー | マイクロ機械的スイッチ |
| US5198385A (en) * | 1991-01-11 | 1993-03-30 | Harris Corporation | Photolithographic formation of die-to-package airbridge in a semiconductor device |
| JPH05332852A (ja) * | 1990-04-11 | 1993-12-17 | Wisconsin Alumni Res Found | 多結晶シリコン共振ビーム変換器およびその製造方法 |
| JPH08213388A (ja) * | 1994-09-30 | 1996-08-20 | Internatl Business Mach Corp <Ibm> | フルオロケイ酸塩ガラス層を形成する方法 |
| JPH09264900A (ja) * | 1996-03-29 | 1997-10-07 | Murata Mfg Co Ltd | 熱式流速センサの製造方法 |
| JPH09279365A (ja) * | 1996-04-11 | 1997-10-28 | Mitsubishi Materials Corp | 微細構造部品を製造する方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3560893A (en) * | 1968-12-27 | 1971-02-02 | Rca Corp | Surface strip transmission line and microwave devices using same |
| US4289846A (en) * | 1979-12-28 | 1981-09-15 | General Electric Company | Process for forming low-reactance interconnections on semiconductors |
| US4997521A (en) * | 1987-05-20 | 1991-03-05 | Massachusetts Institute Of Technology | Electrostatic micromotor |
| US4851080A (en) * | 1987-06-29 | 1989-07-25 | Massachusetts Institute Of Technology | Resonant accelerometer |
| US4945069A (en) | 1988-12-16 | 1990-07-31 | Texas Instruments, Incorporated | Organic space holder for trench processing |
| US5473945A (en) * | 1990-02-14 | 1995-12-12 | The Charles Stark Draper Laboratory, Inc. | Micromechanical angular accelerometer with auxiliary linear accelerometer |
| JPH0644008B2 (ja) * | 1990-08-17 | 1994-06-08 | アナログ・ディバイセス・インコーポレーテッド | モノリシック加速度計 |
| US5337606A (en) | 1992-08-10 | 1994-08-16 | Motorola, Inc. | Laterally sensitive accelerometer and method for making |
| US5479042A (en) * | 1993-02-01 | 1995-12-26 | Brooktree Corporation | Micromachined relay and method of forming the relay |
| US5275973A (en) * | 1993-03-01 | 1994-01-04 | Motorola, Inc. | Method for forming metallization in an integrated circuit |
| US5324553A (en) * | 1993-04-30 | 1994-06-28 | Energy Conversion Devices, Inc. | Method for the improved microwave deposition of thin films |
| US5427975A (en) * | 1993-05-10 | 1995-06-27 | Delco Electronics Corporation | Method of micromachining an integrated sensor on the surface of a silicon wafer |
| US5324683A (en) * | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
| US5364497A (en) * | 1993-08-04 | 1994-11-15 | Analog Devices, Inc. | Method for fabricating microstructures using temporary bridges |
| US5516720A (en) | 1994-02-14 | 1996-05-14 | United Microelectronics Corporation | Stress relaxation in dielectric before metallization |
| US5725729A (en) * | 1994-09-26 | 1998-03-10 | The Charles Stark Draper Laboratory, Inc. | Process for micromechanical fabrication |
| US5656123A (en) * | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
| US5798283A (en) * | 1995-09-06 | 1998-08-25 | Sandia Corporation | Method for integrating microelectromechanical devices with electronic circuitry |
| US5738757A (en) * | 1995-11-22 | 1998-04-14 | Northrop Grumman Corporation | Planar masking for multi-depth silicon etching |
| JPH09190764A (ja) * | 1996-01-08 | 1997-07-22 | Yamaha Corp | 電界放射型素子の製造方法 |
| US5747353A (en) * | 1996-04-16 | 1998-05-05 | National Semiconductor Corporation | Method of making surface micro-machined accelerometer using silicon-on-insulator technology |
| US5686743A (en) * | 1996-07-10 | 1997-11-11 | Trw Inc. | Method of forming airbridged metallization for integrated circuit fabrication |
| US5871655A (en) * | 1998-03-19 | 1999-02-16 | International Business Machines Corporation | Integrated conductor magnetic recording head and suspension having cross-over integrated circuits for noise reduction |
-
1998
- 1998-09-12 GB GBGB9819817.9A patent/GB9819817D0/en not_active Ceased
-
1999
- 1999-09-13 KR KR1020017003187A patent/KR20010075057A/ko not_active Withdrawn
- 1999-09-13 JP JP2000570590A patent/JP2002525212A/ja active Pending
- 1999-09-13 AU AU58738/99A patent/AU5873899A/en not_active Abandoned
- 1999-09-13 AT AT99946321T patent/ATE508370T1/de not_active IP Right Cessation
- 1999-09-13 DE DE69943412T patent/DE69943412D1/de not_active Expired - Lifetime
- 1999-09-13 CA CA002343308A patent/CA2343308A1/en not_active Abandoned
- 1999-09-13 EP EP99946321A patent/EP1116038B1/en not_active Expired - Lifetime
- 1999-09-13 US US09/786,813 patent/US6846426B1/en not_active Expired - Lifetime
- 1999-09-13 WO PCT/GB1999/003026 patent/WO2000016105A1/en not_active Ceased
-
2001
- 2001-03-09 NO NO20011229A patent/NO322454B1/no not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05501615A (ja) * | 1989-09-26 | 1993-03-25 | ブリテイッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー | マイクロ機械的スイッチ |
| JPH05332852A (ja) * | 1990-04-11 | 1993-12-17 | Wisconsin Alumni Res Found | 多結晶シリコン共振ビーム変換器およびその製造方法 |
| US5198385A (en) * | 1991-01-11 | 1993-03-30 | Harris Corporation | Photolithographic formation of die-to-package airbridge in a semiconductor device |
| JPH08213388A (ja) * | 1994-09-30 | 1996-08-20 | Internatl Business Mach Corp <Ibm> | フルオロケイ酸塩ガラス層を形成する方法 |
| JPH09264900A (ja) * | 1996-03-29 | 1997-10-07 | Murata Mfg Co Ltd | 熱式流速センサの製造方法 |
| JPH09279365A (ja) * | 1996-04-11 | 1997-10-28 | Mitsubishi Materials Corp | 微細構造部品を製造する方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006099057A (ja) * | 2004-09-27 | 2006-04-13 | Idc Llc | 基板をパッケージングするための方法及び装置 |
| KR101162592B1 (ko) * | 2004-09-27 | 2012-07-13 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 기판을 패키징하는 방법 및 기기 |
| KR101162593B1 (ko) | 2004-09-27 | 2012-07-27 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 기판을 패키징하는 방법 및 기기 |
| JP2018531803A (ja) * | 2015-09-30 | 2018-11-01 | メムズ ドライブ, インク.Mems Drive, Inc. | 簡略化されたｍｅｍｓデバイスの製造プロセス |
| JP7079728B2 (ja) | 2015-09-30 | 2022-06-02 | メムズ ドライブ，インク． | 簡略化されたｍｅｍｓデバイスの製造プロセス |
Also Published As
| Publication number | Publication date |
|---|---|
| US6846426B1 (en) | 2005-01-25 |
| ATE508370T1 (de) | 2011-05-15 |
| KR20010075057A (ko) | 2001-08-09 |
| AU5873899A (en) | 2000-04-03 |
| WO2000016105A1 (en) | 2000-03-23 |
| NO20011229L (no) | 2001-05-11 |
| NO322454B1 (no) | 2006-10-09 |
| DE69943412D1 (de) | 2011-06-16 |
| CA2343308A1 (en) | 2000-03-23 |
| EP1116038A1 (en) | 2001-07-18 |
| NO20011229D0 (no) | 2001-03-09 |
| GB9819817D0 (en) | 1998-11-04 |
| EP1116038B1 (en) | 2011-05-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060828 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060828 |
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