JP2002518827A - Ｍｏｓトランジスタを含む半導体デバイスの製造方法 - Google Patents
Ｍｏｓトランジスタを含む半導体デバイスの製造方法Info
- Publication number
- JP2002518827A JP2002518827A JP2000553989A JP2000553989A JP2002518827A JP 2002518827 A JP2002518827 A JP 2002518827A JP 2000553989 A JP2000553989 A JP 2000553989A JP 2000553989 A JP2000553989 A JP 2000553989A JP 2002518827 A JP2002518827 A JP 2002518827A
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- insulating film
- gate electrode
- semiconductor body
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/20—Diffusion for doping of insulating layers
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98201958 | 1998-06-11 | ||
| EP98201958.0 | 1998-06-11 | ||
| PCT/IB1999/001003 WO1999065070A2 (en) | 1998-06-11 | 1999-06-03 | Method of manufacturing a semiconductor device comprising a mos transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002518827A true JP2002518827A (ja) | 2002-06-25 |
| JP2002518827A5 JP2002518827A5 (https=) | 2006-06-08 |
Family
ID=8233800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000553989A Pending JP2002518827A (ja) | 1998-06-11 | 1999-06-03 | Ｍｏｓトランジスタを含む半導体デバイスの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6303453B1 (https=) |
| EP (1) | EP1036409A2 (https=) |
| JP (1) | JP2002518827A (https=) |
| WO (1) | WO1999065070A2 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW506080B (en) * | 2001-02-16 | 2002-10-11 | United Microelectronics Corp | Manufacture method of deep sub-micro complementary metal oxide semiconductor with ultrashallow junction |
| EP1808885A1 (en) * | 2002-06-26 | 2007-07-18 | Semequip, Inc. | A semiconductor device and method of fabricating a semiconductor device |
| AU2003261078A1 (en) | 2002-06-26 | 2004-01-19 | Semequip Inc. | A semiconductor device and method of fabricating a semiconductor device |
| KR100480921B1 (ko) * | 2003-07-24 | 2005-04-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| WO2007070321A2 (en) | 2005-12-09 | 2007-06-21 | Semequip Inc. | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
| US7919402B2 (en) | 2006-12-06 | 2011-04-05 | Semequip, Inc. | Cluster ion implantation for defect engineering |
| US9472628B2 (en) * | 2014-07-14 | 2016-10-18 | International Business Machines Corporation | Heterogeneous source drain region and extension region |
| US11355342B2 (en) * | 2019-06-13 | 2022-06-07 | Nanya Technology Corporation | Semiconductor device with reduced critical dimensions and method of manufacturing the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994027325A1 (en) * | 1993-05-07 | 1994-11-24 | Vlsi Technology, Inc. | Integrated circuit structure and method |
| DE4415568C2 (de) * | 1994-05-03 | 1996-03-07 | Siemens Ag | Herstellungsverfahren für MOSFETs mit LDD |
| US5457060A (en) * | 1994-06-20 | 1995-10-10 | Winbond Electronics Corporation | Process for manufactuirng MOSFET having relatively shallow junction of doped region |
| US5518945A (en) * | 1995-05-05 | 1996-05-21 | International Business Machines Corporation | Method of making a diffused lightly doped drain device with built in etch stop |
| US5702986A (en) * | 1995-12-05 | 1997-12-30 | Micron Technology, Inc. | Low-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edges |
| US5998272A (en) * | 1996-11-12 | 1999-12-07 | Advanced Micro Devices, Inc. | Silicidation and deep source-drain formation prior to source-drain extension formation |
| KR100226758B1 (ko) * | 1996-12-14 | 1999-10-15 | 구본준 | 씨모스펫 제조방법 |
| US6087234A (en) * | 1997-12-19 | 2000-07-11 | Texas Instruments - Acer Incorporated | Method of forming a self-aligned silicide MOSFET with an extended ultra-shallow S/D junction |
-
1999
- 1999-06-03 EP EP99921071A patent/EP1036409A2/en not_active Ceased
- 1999-06-03 WO PCT/IB1999/001003 patent/WO1999065070A2/en not_active Ceased
- 1999-06-03 JP JP2000553989A patent/JP2002518827A/ja active Pending
- 1999-06-09 US US09/329,030 patent/US6303453B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999065070A3 (en) | 2000-04-27 |
| WO1999065070A2 (en) | 1999-12-16 |
| US6303453B1 (en) | 2001-10-16 |
| EP1036409A2 (en) | 2000-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060412 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060602 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070724 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080104 |