JP2002511192A - 絶緑体、金属及びチタニウムからなる複合物の研磨方法 - Google Patents

絶緑体、金属及びチタニウムからなる複合物の研磨方法

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Publication number
JP2002511192A
JP2002511192A JP55053798A JP55053798A JP2002511192A JP 2002511192 A JP2002511192 A JP 2002511192A JP 55053798 A JP55053798 A JP 55053798A JP 55053798 A JP55053798 A JP 55053798A JP 2002511192 A JP2002511192 A JP 2002511192A
Authority
JP
Japan
Prior art keywords
metal
slurry
polishing
process according
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP55053798A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002511192A5 (https=
Inventor
アナンサ アール． セズラマン
リー メルボルン クック
ヘイ−ミン ワン
グァンウェイ ウー
Original Assignee
ローデル ホールディングス インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ローデル ホールディングス インコーポレイテッド filed Critical ローデル ホールディングス インコーポレイテッド
Publication of JP2002511192A publication Critical patent/JP2002511192A/ja
Publication of JP2002511192A5 publication Critical patent/JP2002511192A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
JP55053798A 1997-05-20 1998-05-19 絶緑体、金属及びチタニウムからなる複合物の研磨方法 Ceased JP2002511192A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/859,132 US6001269A (en) 1997-05-20 1997-05-20 Method for polishing a composite comprising an insulator, a metal, and titanium
US08/859,132 1997-05-20
PCT/US1998/010252 WO1998053488A1 (en) 1997-05-20 1998-05-19 Method for polishing a composite comprising an insulator, a metal, and titanium

Publications (2)

Publication Number Publication Date
JP2002511192A true JP2002511192A (ja) 2002-04-09
JP2002511192A5 JP2002511192A5 (https=) 2005-12-08

Family

ID=25330130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55053798A Ceased JP2002511192A (ja) 1997-05-20 1998-05-19 絶緑体、金属及びチタニウムからなる複合物の研磨方法

Country Status (3)

Country Link
US (1) US6001269A (https=)
JP (1) JP2002511192A (https=)
WO (1) WO1998053488A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180045185A (ko) * 2016-10-25 2018-05-04 동우 화인켐 주식회사 금속 질화막의 식각액 조성물
WO2019055160A3 (en) * 2017-09-15 2019-04-25 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF CHEMICOMECHANICAL TIN-SIN POLISHING APPLICATIONS

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229468A1 (en) * 1997-10-31 2004-11-18 Seiichi Kondo Polishing method
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6241586B1 (en) * 1998-10-06 2001-06-05 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution
US6572449B2 (en) 1998-10-06 2003-06-03 Rodel Holdings, Inc. Dewatered CMP polishing compositions and methods for using same
SG73683A1 (en) 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
US6177349B1 (en) * 1998-12-07 2001-01-23 Advanced Micro Devices, Inc. Preventing Cu dendrite formation and growth
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
JP2001053039A (ja) * 1999-08-05 2001-02-23 Okamoto Machine Tool Works Ltd ウエハの研磨終点検出方法および研磨終点検出装置
JP4657408B2 (ja) * 1999-10-13 2011-03-23 株式会社トクヤマ 金属膜用研磨剤
US6447375B2 (en) 2000-04-19 2002-09-10 Rodel Holdings Inc. Polishing method using a reconstituted dry particulate polishing composition
US6726534B1 (en) 2001-03-01 2004-04-27 Cabot Microelectronics Corporation Preequilibrium polishing method and system
JP4954398B2 (ja) 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US7132058B2 (en) 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
US6821309B2 (en) 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
EP1489650B1 (en) * 2002-03-04 2010-07-14 Fujimi Incorporated Polishing composition and method for forming wiring structure
US6641630B1 (en) 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
JP4083528B2 (ja) 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
DE10246756B4 (de) * 2002-10-07 2006-03-16 Novar Gmbh Branderkennungsverfahren und Brandmelder zu dessen Durchführung
WO2004073926A1 (en) 2003-02-18 2004-09-02 Parker-Hannifin Corporation Polishing article for electro-chemical mechanical polishing
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20050214191A1 (en) * 2004-03-29 2005-09-29 Mueller Brian L Abrasives and compositions for chemical mechanical planarization of tungsten and titanium
US20050211952A1 (en) * 2004-03-29 2005-09-29 Timothy Mace Compositions and methods for chemical mechanical planarization of tungsten and titanium
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
FR2900587B1 (fr) * 2006-05-02 2008-12-26 Kemesys Procede de polissage mecano-chimique (cmp) en continu d'un materiau multicouche
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
CN102203935A (zh) * 2008-10-27 2011-09-28 Nxp股份有限公司 生物兼容电极

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US4992135A (en) * 1990-07-24 1991-02-12 Micron Technology, Inc. Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
WO1995024054A1 (en) * 1994-03-01 1995-09-08 Rodel, Inc. Improved compositions and methods for polishing
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5695384A (en) * 1994-12-07 1997-12-09 Texas Instruments Incorporated Chemical-mechanical polishing salt slurry
US5693239A (en) * 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
US5770103A (en) * 1997-07-08 1998-06-23 Rodel, Inc. Composition and method for polishing a composite comprising titanium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180045185A (ko) * 2016-10-25 2018-05-04 동우 화인켐 주식회사 금속 질화막의 식각액 조성물
KR102700158B1 (ko) 2016-10-25 2024-08-28 동우 화인켐 주식회사 금속 질화막의 식각액 조성물
WO2019055160A3 (en) * 2017-09-15 2019-04-25 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF CHEMICOMECHANICAL TIN-SIN POLISHING APPLICATIONS

Also Published As

Publication number Publication date
US6001269A (en) 1999-12-14
WO1998053488A1 (en) 1998-11-26

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