JP2002510879A - 静電チャック電源 - Google Patents

静電チャック電源

Info

Publication number
JP2002510879A
JP2002510879A JP2000542796A JP2000542796A JP2002510879A JP 2002510879 A JP2002510879 A JP 2002510879A JP 2000542796 A JP2000542796 A JP 2000542796A JP 2000542796 A JP2000542796 A JP 2000542796A JP 2002510879 A JP2002510879 A JP 2002510879A
Authority
JP
Japan
Prior art keywords
voltage
power supply
current
chucking
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000542796A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002510879A5 (https=
Inventor
マーモード ダヒメン，
リチャード， アール． メット，
シアマック サリミアン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2002510879A publication Critical patent/JP2002510879A/ja
Publication of JP2002510879A5 publication Critical patent/JP2002510879A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Jigs For Machine Tools (AREA)
JP2000542796A 1998-04-03 1999-03-31 静電チャック電源 Pending JP2002510879A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/054,575 US6198616B1 (en) 1998-04-03 1998-04-03 Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US09/054,575 1998-04-03
PCT/US1999/007192 WO1999052144A1 (en) 1998-04-03 1999-03-31 Electrostatic chuck power supply

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011109948A Division JP5583633B2 (ja) 1998-04-03 2011-05-16 静電チャック電源

Publications (2)

Publication Number Publication Date
JP2002510879A true JP2002510879A (ja) 2002-04-09
JP2002510879A5 JP2002510879A5 (https=) 2009-04-16

Family

ID=21992049

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000542796A Pending JP2002510879A (ja) 1998-04-03 1999-03-31 静電チャック電源
JP2011109948A Expired - Lifetime JP5583633B2 (ja) 1998-04-03 2011-05-16 静電チャック電源

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011109948A Expired - Lifetime JP5583633B2 (ja) 1998-04-03 2011-05-16 静電チャック電源

Country Status (3)

Country Link
US (1) US6198616B1 (https=)
JP (2) JP2002510879A (https=)
WO (1) WO1999052144A1 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004535039A (ja) * 2001-06-07 2004-11-18 ラム　リサーチ　コーポレーション プラズマ処理装置方法および装置
JP2008156746A (ja) * 2006-11-30 2008-07-10 Canon Anelva Corp 電力導入装置及び成膜方法
JP2010010236A (ja) * 2008-06-25 2010-01-14 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2013511814A (ja) * 2009-11-19 2013-04-04 ラム リサーチ コーポレーション プラズマ処理システムを制御するための方法および装置
JP2014533436A (ja) * 2011-11-04 2014-12-11 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 基板クランプシステム及び該システムを動作させるための方法
US9799546B2 (en) 2015-08-28 2017-10-24 Toshiba Memory Corporation Semiconductor manufacturing apparatus and method of operating the same
JP2021185600A (ja) * 2016-08-05 2021-12-09 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated グリーンシートセラミック上へのメタライゼーション材料の、サブミクロン均一性を有する高精度スクリーン印刷

Families Citing this family (183)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3296292B2 (ja) * 1998-06-26 2002-06-24 松下電器産業株式会社 エッチング方法、クリーニング方法、及びプラズマ処理装置
US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
US6430022B2 (en) * 1999-04-19 2002-08-06 Applied Materials, Inc. Method and apparatus for controlling chucking force in an electrostatic
ATE379847T1 (de) * 1999-07-02 2007-12-15 Matsushita Electric Industrial Co Ltd Anordnung zur herstellung von löthöckern auf halbleitersubstraten unter generierung elektrischer ladung, methode und anordnung zum entfernen dieser ladungen, und elektrische ladung generierendes halbleitersubstrat
KR100368116B1 (ko) * 2000-08-07 2003-01-15 삼성전자 주식회사 반도체설비의 정전척 구동전원 자동 방전장치
WO2002017384A1 (en) * 2000-08-23 2002-02-28 Applied Materials, Inc. Electrostatic chuck temperature control method and system
US6376795B1 (en) * 2000-10-24 2002-04-23 Lsi Logic Corporation Direct current dechucking system
TWI246873B (en) 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
US6853953B2 (en) * 2001-08-07 2005-02-08 Tokyo Electron Limited Method for characterizing the performance of an electrostatic chuck
JP2003110012A (ja) * 2001-09-28 2003-04-11 Nissin Electric Co Ltd 基板保持方法およびその装置
US6727655B2 (en) 2001-10-26 2004-04-27 Mcchesney Jon Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber
US20030210510A1 (en) * 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking
EP1515363B1 (en) * 2002-06-17 2011-03-23 Mitsubishi Heavy Industries, Ltd. Method and device for measuring wafer potential or temperature
US6898065B2 (en) * 2002-07-26 2005-05-24 Brad Mays Method and apparatus for operating an electrostatic chuck in a semiconductor substrate processing system
US20040031699A1 (en) * 2002-08-19 2004-02-19 Applied Materials, Inc. Method for performing real time arcing detection
DE10247051A1 (de) * 2002-10-09 2004-04-22 Polymer Latex Gmbh & Co Kg Latex und Verfahren zu seiner Herstellung
DE10260614B4 (de) * 2002-12-23 2008-01-31 Advanced Micro Devices, Inc., Sunnyvale Plasmaparametersteuerung unter Verwendung von Lerndaten
US7100954B2 (en) * 2003-07-11 2006-09-05 Nexx Systems, Inc. Ultra-thin wafer handling system
US7798801B2 (en) * 2005-01-31 2010-09-21 Molecular Imprints, Inc. Chucking system for nano-manufacturing
US7636999B2 (en) * 2005-01-31 2009-12-29 Molecular Imprints, Inc. Method of retaining a substrate to a wafer chuck
US8149562B2 (en) * 2007-03-09 2012-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
US7813103B2 (en) * 2007-10-11 2010-10-12 Applied Materials, Inc. Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes
TWI475594B (zh) 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
SG10201402319QA (en) 2009-05-15 2014-07-30 Entegris Inc Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8440061B2 (en) * 2009-07-20 2013-05-14 Lam Research Corporation System and method for plasma arc detection, isolation and prevention
US8514544B2 (en) * 2009-08-07 2013-08-20 Trek, Inc. Electrostatic clamp optimizer
US8901935B2 (en) * 2009-11-19 2014-12-02 Lam Research Corporation Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
US8501631B2 (en) * 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
CN105196094B (zh) 2010-05-28 2018-01-26 恩特格林斯公司 高表面电阻率静电吸盘
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
CN104838484B (zh) * 2012-11-22 2019-04-16 株式会社创意科技 供电系统
JP6043640B2 (ja) * 2013-01-30 2016-12-14 株式会社アルバック 基板吸着検知方法
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
GB2540883B (en) 2014-02-07 2018-12-26 Trek Inc System and method for clamping a work piece
NL2013676A (en) * 2014-02-11 2015-08-17 Asml Netherlands Bv A method of clamping articles for a lithographic apparatus, a controller for a lithographic apparatus, a chuck, a method of using a chuck and a device manufacturing method.
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9741543B2 (en) * 2014-07-21 2017-08-22 Lam Research Corporation Multi-range voltage sensor and method for a voltage controlled interface of a plasma processing system
US10121641B2 (en) 2014-07-21 2018-11-06 Lam Research Corporation Large dynamic range RF voltage sensor and method for voltage mode RF bias application of plasma processing systems
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) * 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
TWI680496B (zh) * 2016-09-13 2019-12-21 美商應用材料股份有限公司 高壓縮/拉伸的翹曲晶圓上的厚鎢硬遮罩膜沉積
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
JP7229929B2 (ja) 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10923379B2 (en) * 2017-02-15 2021-02-16 Lam Research Corporation Methods for controlling clamping of insulator-type substrate on electrostatic-type substrate support structure
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10636630B2 (en) 2017-07-27 2020-04-28 Applied Materials, Inc. Processing chamber and method with thermal control
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11114326B2 (en) 2017-09-08 2021-09-07 Applied Materials, Inc. Substrate chucking and dechucking methods
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
TWI713961B (zh) 2018-01-15 2020-12-21 美商應用材料股份有限公司 針對碳化鎢膜改善附著及缺陷之技術
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
KR102223759B1 (ko) * 2018-06-07 2021-03-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11476145B2 (en) * 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
JP7241540B2 (ja) * 2018-12-28 2023-03-17 東京エレクトロン株式会社 測定方法及び測定治具
CN111383894B (zh) * 2018-12-29 2022-12-30 中微半导体设备(上海)股份有限公司 一种等离子处理器以及静电夹盘加热方法
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7599428B2 (ja) 2019-03-08 2024-12-13 アプライド マテリアルズ インコーポレイテッド 基板処理チャンバ向けのチャッキングのプロセス及びシステム
US12354895B2 (en) * 2019-12-19 2025-07-08 Lam Research Corporation Encapsulated RFID in consumable chamber parts
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
KR102822584B1 (ko) * 2020-12-14 2025-06-18 세메스 주식회사 기판 처리 장치 및 그 방법
JP7527194B2 (ja) * 2020-12-23 2024-08-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US11854911B2 (en) 2021-02-25 2023-12-26 Applied Materials, Inc. Methods, systems, and apparatus for conducting chucking operations using an adjusted chucking voltage if a process shift occurs
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) * 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US20230170192A1 (en) * 2021-11-29 2023-06-01 Applied Materials, Inc. Method and apparatus for realtime wafer potential measurement in a plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
CN114597153B (zh) * 2022-02-22 2025-10-10 北京北方华创微电子装备有限公司 承载装置、半导体工艺设备及其控制方法
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
KR102784012B1 (ko) * 2023-03-13 2025-03-19 주식회사 서우일렉트론 적응형 잔류 전하 감소를 이용하는 정전척 전압공급장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149734A (en) 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
JPH0730468B2 (ja) 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
JP3306677B2 (ja) * 1993-05-12 2002-07-24 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
TW293231B (https=) * 1994-04-27 1996-12-11 Aneruba Kk
US5708250A (en) 1996-03-29 1998-01-13 Lam Resarch Corporation Voltage controller for electrostatic chuck of vacuum plasma processors
US5812361A (en) 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
US5737175A (en) 1996-06-19 1998-04-07 Lam Research Corporation Bias-tracking D.C. power circuit for an electrostatic chuck
US5737177A (en) 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004535039A (ja) * 2001-06-07 2004-11-18 ラム　リサーチ　コーポレーション プラズマ処理装置方法および装置
JP4897195B2 (ja) * 2001-06-07 2012-03-14 ラム リサーチ コーポレーション プラズマ処理方法、プラズマ処理装置およびプラズマ処理装置の製造方法
JP2008156746A (ja) * 2006-11-30 2008-07-10 Canon Anelva Corp 電力導入装置及び成膜方法
JP2010010236A (ja) * 2008-06-25 2010-01-14 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2016054159A (ja) * 2009-11-19 2016-04-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理システムを制御するための方法および装置
JP2013511814A (ja) * 2009-11-19 2013-04-04 ラム リサーチ コーポレーション プラズマ処理システムを制御するための方法および装置
JP2014533436A (ja) * 2011-11-04 2014-12-11 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 基板クランプシステム及び該システムを動作させるための方法
US9799546B2 (en) 2015-08-28 2017-10-24 Toshiba Memory Corporation Semiconductor manufacturing apparatus and method of operating the same
US10269608B2 (en) 2015-08-28 2019-04-23 Toshiba Memory Corporation Semiconductor manufacturing apparatus and method of operating the same
JP2021185600A (ja) * 2016-08-05 2021-12-09 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated グリーンシートセラミック上へのメタライゼーション材料の、サブミクロン均一性を有する高精度スクリーン印刷
KR20220122798A (ko) * 2016-08-05 2022-09-02 어플라이드 머티어리얼스, 인코포레이티드 그린 시트 세라믹 상의 금속화 재료들의 서브-미크론 균일성을 갖는 정밀 스크린 프린팅
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