JP2002509654A - 走査リソグラフィック投写装置のための鏡投写システム、およびそのようなシステムを備えるリソグラフィック装置 - Google Patents
走査リソグラフィック投写装置のための鏡投写システム、およびそのようなシステムを備えるリソグラフィック装置Info
- Publication number
- JP2002509654A JP2002509654A JP55512399A JP55512399A JP2002509654A JP 2002509654 A JP2002509654 A JP 2002509654A JP 55512399 A JP55512399 A JP 55512399A JP 55512399 A JP55512399 A JP 55512399A JP 2002509654 A JP2002509654 A JP 2002509654A
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- projection system
- image
- mask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000005855 radiation Effects 0.000 claims abstract description 25
- 238000003384 imaging method Methods 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 11
- 238000005286 illumination Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. マスク中に存在する、マスクパターンの映像をEUV放射の、横断面が 円形部分の形をしているビームにより基板上に形成するためのステップおよび走 査リソグラフィック投写装置に使用するための鏡投写システムであって、その投 写システムは物体側から映像側まで第1乃至第6の6枚の映像形成鏡により構成 され、第1、第2、第4、第6の鏡は凹面であり、第5の鏡は凸面である鏡投写 システムにおいて、第3の鏡は凸面であることを特徴とするマスクパターンの映 像を基板上に形成するためのステップおよび走査リソグラフィック投写装置に使 用するための鏡投写システム。 2. 請求の範囲1記載の鏡投写システムであって、システムの映像側におけ る開口数が0.20nmのオーダーで、倍率Mが+0.25、円形の一部の形の 映像場の幅が1,5mmであることを特徴とする鏡投写システム。 3. 請求の範囲1記載の鏡投写システムであって、全ての鏡が非球面表面を 持つことを特徴とする鏡投写システム。 4. 請求の範囲1、2または3記載の鏡投写システムであって、システムは 映像側でテレセントリックであることを特徴とする鏡投写システム。 5. 請求の範囲1、2、3または4記載の鏡投写システムであって、第2の 鏡と第3の鏡との間に物理的にアクセス可能なダイアフラムが配置されているこ とを特徴とする鏡投写システム。 6. EUV放射源を有する照明器と、マスクを収容するためのマスクホルダ ーと、基板を収容するための基板ホルダーと、投写システムとを備え、投写シス テムが先行する請求の範囲のいずれか1つに記載の鏡投写システムであることを 特徴とするマスクパターンのステップおよび走査映像形成のためのリソグラフィ ック装置。 7. 請求の範囲6記載のリソグラフィック装置であって、マスクが反射マス クであり、照明器がマスクホルダーの投写システムが配置されている側と同じ側 に配置されることを特徴とするリソグラフィック装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98201484.7 | 1998-05-06 | ||
EP98201484 | 1998-05-06 | ||
PCT/IB1999/000752 WO1999057606A1 (en) | 1998-05-06 | 1999-04-26 | Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002509654A true JP2002509654A (ja) | 2002-03-26 |
JP4286330B2 JP4286330B2 (ja) | 2009-06-24 |
Family
ID=8233690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55512399A Expired - Lifetime JP4286330B2 (ja) | 1998-05-06 | 1999-04-26 | 走査リソグラフィック投写装置のための鏡投写システム、およびそのようなシステムを備えるリソグラフィック装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6255661B1 (ja) |
EP (1) | EP1004057B1 (ja) |
JP (1) | JP4286330B2 (ja) |
DE (1) | DE69922132T2 (ja) |
TW (1) | TWI238896B (ja) |
WO (1) | WO1999057606A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000235144A (ja) * | 1999-02-15 | 2000-08-29 | Carl Zeiss Stiftung Trading As Carl Zeiss | マイクロリソグラフィー縮小用対物レンズおよび投影露光装置 |
JP2005172988A (ja) * | 2003-12-09 | 2005-06-30 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
JP2008541439A (ja) * | 2005-05-13 | 2008-11-20 | カール ツァイス エスエムテー アーゲー | 6枚の反射鏡を備えたeuv投影光学系 |
US7684125B2 (en) | 2003-10-29 | 2010-03-23 | Carl Zeiss Smt Ag | Diaphragm changing device |
US8072700B2 (en) | 2003-10-29 | 2011-12-06 | Carl Zeiss Smt Gmbh | Optical apparatus for use in photolithography |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19903807A1 (de) * | 1998-05-05 | 1999-11-11 | Zeiss Carl Fa | Beleuchtungssystem insbesondere für die EUV-Lithographie |
US6859515B2 (en) * | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
US7186983B2 (en) * | 1998-05-05 | 2007-03-06 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
US6859328B2 (en) * | 1998-05-05 | 2005-02-22 | Carl Zeiss Semiconductor | Illumination system particularly for microlithography |
US6396067B1 (en) * | 1998-05-06 | 2002-05-28 | Koninklijke Philips Electronics N.V. | Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system |
US6600552B2 (en) | 1999-02-15 | 2003-07-29 | Carl-Zeiss Smt Ag | Microlithography reduction objective and projection exposure apparatus |
DE19948240A1 (de) * | 1999-02-15 | 2000-08-24 | Zeiss Carl Fa | Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
USRE42118E1 (en) * | 1999-02-15 | 2011-02-08 | Carl-Zeiss-Smt Ag | Projection system for EUV lithography |
US7151592B2 (en) * | 1999-02-15 | 2006-12-19 | Carl Zeiss Smt Ag | Projection system for EUV lithography |
US6985210B2 (en) * | 1999-02-15 | 2006-01-10 | Carl Zeiss Smt Ag | Projection system for EUV lithography |
TW538256B (en) | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
US6867913B2 (en) | 2000-02-14 | 2005-03-15 | Carl Zeiss Smt Ag | 6-mirror microlithography projection objective |
AU2001250017A1 (en) | 2000-03-03 | 2001-09-17 | Dun And Bradstreet, Inc. | Facilitating a transaction in electronic commerce |
JP2002057963A (ja) * | 2000-08-10 | 2002-02-22 | Canon Inc | 表示装置 |
JP2004512552A (ja) | 2000-10-20 | 2004-04-22 | カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス | 8反射鏡型マイクロリソグラフィ用投影光学系 |
DE10052289A1 (de) | 2000-10-20 | 2002-04-25 | Zeiss Carl | 8-Spiegel-Mikrolithographie-Projektionsobjektiv |
TW573234B (en) | 2000-11-07 | 2004-01-21 | Asml Netherlands Bv | Lithographic projection apparatus and integrated circuit device manufacturing method |
EP1679550A1 (en) | 2000-11-07 | 2006-07-12 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2004514943A (ja) * | 2000-11-28 | 2004-05-20 | カール・ツアイス・エスエムテイ・アーゲー | 157nmリソグラフィ用の反射屈折投影系 |
JP2004516500A (ja) * | 2000-12-12 | 2004-06-03 | カール ツァイス エスエムテー アーゲー | Euvリソグラフィ用の投影系 |
JP2003045782A (ja) * | 2001-07-31 | 2003-02-14 | Canon Inc | 反射型縮小投影光学系及びそれを用いた露光装置 |
JP2004158786A (ja) * | 2002-11-08 | 2004-06-03 | Canon Inc | 投影光学系及び露光装置 |
JP3938040B2 (ja) * | 2002-12-27 | 2007-06-27 | キヤノン株式会社 | 反射型投影光学系、露光装置及びデバイス製造方法 |
US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US20080151364A1 (en) | 2004-01-14 | 2008-06-26 | Carl Zeiss Smt Ag | Catadioptric projection objective |
CN100483174C (zh) | 2004-05-17 | 2009-04-29 | 卡尔蔡司Smt股份公司 | 具有中间图像的反射折射投影物镜 |
JP2006245147A (ja) * | 2005-03-01 | 2006-09-14 | Canon Inc | 投影光学系、露光装置及びデバイスの製造方法 |
KR101176686B1 (ko) * | 2005-03-08 | 2012-08-23 | 칼 짜이스 에스엠티 게엠베하 | 접근 용이한 조리개 또는 구경 조리개를 구비한마이크로리소그래피 투영 시스템 |
US20090213345A1 (en) * | 2005-05-03 | 2009-08-27 | Hans-Juergen Mann | Microlithography exposure apparatus using polarized light and microlithography projection system having concave primary and secondary mirrors |
KR101535230B1 (ko) * | 2009-06-03 | 2015-07-09 | 삼성전자주식회사 | Euv 마스크용 공간 영상 측정 장치 및 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL9000503A (nl) | 1990-03-05 | 1991-10-01 | Asm Lithography Bv | Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat. |
US5178974A (en) * | 1990-10-12 | 1993-01-12 | The United States Of America As Represented By The United States Department Of Energy | Virtually distortion-free imaging system for large field, high resolution lithography using electrons, ions or other particle beams |
US5222112A (en) * | 1990-12-27 | 1993-06-22 | Hitachi, Ltd. | X-ray pattern masking by a reflective reduction projection optical system |
NL9100410A (nl) | 1991-03-07 | 1992-10-01 | Asm Lithography Bv | Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting. |
US5303001A (en) * | 1992-12-21 | 1994-04-12 | Ultratech Stepper, Inc. | Illumination system for half-field dyson stepper |
TW318255B (ja) * | 1995-05-30 | 1997-10-21 | Philips Electronics Nv | |
US5805365A (en) * | 1995-10-12 | 1998-09-08 | Sandia Corporation | Ringfield lithographic camera |
US5815310A (en) | 1995-12-12 | 1998-09-29 | Svg Lithography Systems, Inc. | High numerical aperture ring field optical reduction system |
US5686728A (en) | 1996-05-01 | 1997-11-11 | Lucent Technologies Inc | Projection lithography system and method using all-reflective optical elements |
US5973826A (en) * | 1998-02-20 | 1999-10-26 | Regents Of The University Of California | Reflective optical imaging system with balanced distortion |
-
1998
- 1998-10-13 US US09/170,467 patent/US6255661B1/en not_active Expired - Lifetime
- 1998-10-15 TW TW087117130A patent/TWI238896B/zh not_active IP Right Cessation
-
1999
- 1999-04-26 JP JP55512399A patent/JP4286330B2/ja not_active Expired - Lifetime
- 1999-04-26 WO PCT/IB1999/000752 patent/WO1999057606A1/en active IP Right Grant
- 1999-04-26 DE DE69922132T patent/DE69922132T2/de not_active Expired - Lifetime
- 1999-04-26 EP EP99913544A patent/EP1004057B1/en not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000235144A (ja) * | 1999-02-15 | 2000-08-29 | Carl Zeiss Stiftung Trading As Carl Zeiss | マイクロリソグラフィー縮小用対物レンズおよび投影露光装置 |
US7684125B2 (en) | 2003-10-29 | 2010-03-23 | Carl Zeiss Smt Ag | Diaphragm changing device |
US8072700B2 (en) | 2003-10-29 | 2011-12-06 | Carl Zeiss Smt Gmbh | Optical apparatus for use in photolithography |
US8089707B2 (en) | 2003-10-29 | 2012-01-03 | Carl Zeiss Smt Gmbh | Diaphragm changing device |
JP2012094916A (ja) * | 2003-10-29 | 2012-05-17 | Carl Zeiss Smt Gmbh | 光学式撮像装置、システムおよび方法 |
US9933707B2 (en) | 2003-10-29 | 2018-04-03 | Carl Zeiss Smt Ag | Optical apparatus for use in photolithography |
US10139733B2 (en) | 2003-10-29 | 2018-11-27 | Carl Zeiss Smt Gmbh | Diaphragm changing device |
JP2005172988A (ja) * | 2003-12-09 | 2005-06-30 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
JP2008541439A (ja) * | 2005-05-13 | 2008-11-20 | カール ツァイス エスエムテー アーゲー | 6枚の反射鏡を備えたeuv投影光学系 |
Also Published As
Publication number | Publication date |
---|---|
WO1999057606A1 (en) | 1999-11-11 |
JP4286330B2 (ja) | 2009-06-24 |
TWI238896B (en) | 2005-09-01 |
EP1004057B1 (en) | 2004-11-24 |
EP1004057A1 (en) | 2000-05-31 |
DE69922132D1 (de) | 2004-12-30 |
US6255661B1 (en) | 2001-07-03 |
DE69922132T2 (de) | 2006-03-02 |
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