JP2002509290A - 放射線感受性組成物の製造法 - Google Patents

放射線感受性組成物の製造法

Info

Publication number
JP2002509290A
JP2002509290A JP2000540482A JP2000540482A JP2002509290A JP 2002509290 A JP2002509290 A JP 2002509290A JP 2000540482 A JP2000540482 A JP 2000540482A JP 2000540482 A JP2000540482 A JP 2000540482A JP 2002509290 A JP2002509290 A JP 2002509290A
Authority
JP
Japan
Prior art keywords
polymer
radiation
molecular weight
mwco
fraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000540482A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002509290A5 (enExample
Inventor
サンジャイ・マーリーク
アンドルー・ジェイ・ブレイクニー
ジョウゼフ・ジェイ・シゼンスキ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olin Microelectronic Chemicals Inc
Original Assignee
Olin Microelectronic Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olin Microelectronic Chemicals Inc filed Critical Olin Microelectronic Chemicals Inc
Publication of JP2002509290A publication Critical patent/JP2002509290A/ja
Publication of JP2002509290A5 publication Critical patent/JP2002509290A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2000540482A 1998-01-16 1999-01-13 放射線感受性組成物の製造法 Pending JP2002509290A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/008,671 US6027853A (en) 1998-01-16 1998-01-16 Process for preparing a radiation-sensitive composition
US09/008,671 1998-01-16
PCT/US1999/000719 WO1999036831A1 (en) 1998-01-16 1999-01-13 Process for preparing a radiation-sensitive composition

Publications (2)

Publication Number Publication Date
JP2002509290A true JP2002509290A (ja) 2002-03-26
JP2002509290A5 JP2002509290A5 (enExample) 2006-03-02

Family

ID=21732997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000540482A Pending JP2002509290A (ja) 1998-01-16 1999-01-13 放射線感受性組成物の製造法

Country Status (7)

Country Link
US (1) US6027853A (enExample)
EP (1) EP1044394B1 (enExample)
JP (1) JP2002509290A (enExample)
KR (1) KR100576534B1 (enExample)
DE (1) DE69925358T2 (enExample)
TW (1) TWI242110B (enExample)
WO (1) WO1999036831A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6359114B1 (en) * 1995-06-07 2002-03-19 Aphton Corp. System for method for the modification and purification of proteins
US6506831B2 (en) * 1998-12-20 2003-01-14 Honeywell International Inc. Novolac polymer planarization films with high temperature stability
US6414110B1 (en) * 1999-11-12 2002-07-02 Triquest Lp Purification means
US6461717B1 (en) * 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
CN100367113C (zh) * 2002-12-11 2008-02-06 三星电子株式会社 用于形成共轭聚合物图案的组合物和使用该组合物形成共轭聚合物图案的方法
US7910223B2 (en) * 2003-07-17 2011-03-22 Honeywell International Inc. Planarization films for advanced microelectronic applications and devices and methods of production thereof
US20070248913A1 (en) * 2006-04-24 2007-10-25 Rahman M Dalil Process for producing film forming resins for photoresist compositions

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159821A (en) * 1981-03-30 1982-10-02 Fujitsu Ltd Production of photopolymer
JPS6097347A (ja) * 1983-11-01 1985-05-31 Hitachi Chem Co Ltd 画像形成性感光性組成物
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
FR2658092B1 (fr) * 1990-02-13 1992-05-15 Atochem Procede de purification de solutions de polyorganophosphazene par membranes.
US5171767A (en) * 1991-05-06 1992-12-15 Rohm And Haas Company Utrafiltration process for the recovery of polymeric latices from whitewater
TW267219B (enExample) * 1991-12-27 1996-01-01 Sumitomo Chemical Co
US5527161A (en) * 1992-02-13 1996-06-18 Cybor Corporation Filtering and dispensing system
US5571657A (en) * 1993-09-30 1996-11-05 Shipley Company, Inc. Modified cation exhange process
US5462675A (en) * 1994-07-15 1995-10-31 Pall Corporation Filter assembly and method of reducing hold-up in a filter assembly
JP3278306B2 (ja) * 1994-10-31 2002-04-30 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3330254B2 (ja) * 1995-04-19 2002-09-30 東京応化工業株式会社 ネガ型レジスト組成物
JP3467118B2 (ja) * 1995-05-24 2003-11-17 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5618655A (en) * 1995-07-17 1997-04-08 Olin Corporation Process of reducing trace levels of metal impurities from resist components
JP3589365B2 (ja) * 1996-02-02 2004-11-17 富士写真フイルム株式会社 ポジ画像形成組成物

Also Published As

Publication number Publication date
DE69925358T2 (de) 2006-01-12
TWI242110B (en) 2005-10-21
EP1044394A4 (en) 2001-04-04
WO1999036831A1 (en) 1999-07-22
WO1999036831A9 (en) 1999-10-07
KR20010040340A (ko) 2001-05-15
EP1044394A1 (en) 2000-10-18
EP1044394B1 (en) 2005-05-18
DE69925358D1 (de) 2005-06-23
KR100576534B1 (ko) 2006-05-08
US6027853A (en) 2000-02-22

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