JP2002506568A - 高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化 - Google Patents

高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化

Info

Publication number
JP2002506568A
JP2002506568A JP50493399A JP50493399A JP2002506568A JP 2002506568 A JP2002506568 A JP 2002506568A JP 50493399 A JP50493399 A JP 50493399A JP 50493399 A JP50493399 A JP 50493399A JP 2002506568 A JP2002506568 A JP 2002506568A
Authority
JP
Japan
Prior art keywords
metal
nitride
layer
silicide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP50493399A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002506568A5 (enExample
Inventor
ヤング・ユン−イェン・ジャック
チェン・チング−フワ
チェン・イェ−ジャー・アーサー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2002506568A publication Critical patent/JP2002506568A/ja
Publication of JP2002506568A5 publication Critical patent/JP2002506568A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP50493399A 1997-06-24 1998-06-22 高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化 Withdrawn JP2002506568A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/881,710 1997-06-24
US08/881,710 US6221792B1 (en) 1997-06-24 1997-06-24 Metal and metal silicide nitridization in a high density, low pressure plasma reactor
PCT/US1998/012934 WO1998059366A1 (en) 1997-06-24 1998-06-22 Metal and metal silicide nitridization in a high density, low pressure plasma reactor

Publications (2)

Publication Number Publication Date
JP2002506568A true JP2002506568A (ja) 2002-02-26
JP2002506568A5 JP2002506568A5 (enExample) 2006-01-05

Family

ID=25379039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50493399A Withdrawn JP2002506568A (ja) 1997-06-24 1998-06-22 高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化

Country Status (6)

Country Link
US (2) US6221792B1 (enExample)
EP (1) EP1016130A1 (enExample)
JP (1) JP2002506568A (enExample)
KR (1) KR20010013723A (enExample)
TW (1) TW490509B (enExample)
WO (1) WO1998059366A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013058565A (ja) * 2011-09-07 2013-03-28 Ulvac Japan Ltd バリアメタル層の形成方法、及び、バリアメタル層の形成装置

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856236A (en) * 1996-06-14 1999-01-05 Micron Technology, Inc. Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer
GB9710514D0 (en) * 1996-09-21 1997-07-16 Philips Electronics Nv Electronic devices and their manufacture
US7858518B2 (en) * 1998-04-07 2010-12-28 Micron Technology, Inc. Method for forming a selective contact and local interconnect in situ
US6559050B1 (en) * 1998-09-29 2003-05-06 Texas Instruments Incorporated Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices
JP2000208508A (ja) * 1999-01-13 2000-07-28 Texas Instr Inc <Ti> 珪酸塩高誘電率材料の真空蒸着
US6653222B2 (en) * 1999-08-03 2003-11-25 International Business Machines Corporation Plasma enhanced liner
DE10010286A1 (de) 2000-02-25 2001-09-13 Infineon Technologies Ag Verfahren zum Auffüllen von Vertiefungen in einer Oberfläche einer Halbleiterstruktur und eine auf diese Weise aufgefüllte Halbleiterstruktur
KR100379333B1 (ko) * 2000-08-16 2003-04-10 주식회사 하이닉스반도체 티타늄 실리사이드막 제조방법
US6455414B1 (en) * 2000-11-28 2002-09-24 Tokyo Electron Limited Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers
KR20030001939A (ko) * 2001-06-28 2003-01-08 동부전자 주식회사 반도체소자의 장벽층 형성 방법 및 장치
US6426305B1 (en) * 2001-07-03 2002-07-30 International Business Machines Corporation Patterned plasma nitridation for selective epi and silicide formation
US6593234B2 (en) * 2001-07-24 2003-07-15 Micron Technology, Inc. Methods of utilizing metal rich silicide in forming semiconductor constructions
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US7144806B1 (en) * 2002-10-23 2006-12-05 Novellus Systems, Inc. ALD of tantalum using a hydride reducing agent
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US7856035B2 (en) * 2004-05-05 2010-12-21 Welch Allyn, Inc. Method and apparatus for wireless transmission of data
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US20060021980A1 (en) * 2004-07-30 2006-02-02 Lee Sang H System and method for controlling a power distribution within a microwave cavity
US7189939B2 (en) * 2004-09-01 2007-03-13 Noritsu Koki Co., Ltd. Portable microwave plasma discharge unit
US7271363B2 (en) 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
US20060052883A1 (en) * 2004-09-08 2006-03-09 Lee Sang H System and method for optimizing data acquisition of plasma using a feedback control module
US7749896B2 (en) * 2005-08-23 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for forming the same
CA2813159A1 (en) * 2012-05-24 2013-11-24 Sulzer Metco Ag Method of modifying a boundary region of a substrate
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
CN108573942B (zh) * 2017-03-09 2021-09-14 联华电子股份有限公司 内连线结构及其制作方法
KR102792797B1 (ko) 2018-11-19 2025-04-07 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
JP7581213B2 (ja) 2019-01-28 2024-11-12 ラム リサーチ コーポレーション 金属膜の蒸着
WO2021046058A1 (en) 2019-09-03 2021-03-11 Lam Research Corporation Molybdenum deposition
JP2022551965A (ja) 2019-10-15 2022-12-14 ラム リサーチ コーポレーション モリブデン充填
CN112159949B (zh) * 2020-10-27 2023-03-10 广东省科学院新材料研究所 氮化钛涂层的制备方法、基材及应用
CN112746320B (zh) * 2020-12-22 2022-07-05 中国科学院半导体研究所 利用磁控溅射在硅衬底上制备氮化锆薄膜的方法
TW202438705A (zh) * 2022-10-28 2024-10-01 美商蘭姆研究公司 選擇性鉬填充
US20240194527A1 (en) * 2022-12-07 2024-06-13 Applied Materials, Inc. Interlayer for Resistivity Reduction in Metal Deposition Applications

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3221025B2 (ja) * 1991-12-19 2001-10-22 ソニー株式会社 プラズマプロセス装置
US5334264A (en) 1992-06-30 1994-08-02 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Titanium plasma nitriding intensified by thermionic emission source
JPH0697111A (ja) 1992-09-11 1994-04-08 Sony Corp バリアメタルの形成方法
JP3401843B2 (ja) * 1993-06-21 2003-04-28 ソニー株式会社 半導体装置における多層配線の形成方法
WO1995034092A1 (en) * 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
JP2692590B2 (ja) * 1994-06-29 1997-12-17 日本電気株式会社 半導体装置およびその製造方法
JPH08176823A (ja) * 1994-12-26 1996-07-09 Sony Corp 高融点金属薄膜の成膜方法
US5702564A (en) * 1995-01-03 1997-12-30 Advanced Micro Devices, Inc. Method of etching conductive lines without undercutting
US5545592A (en) * 1995-02-24 1996-08-13 Advanced Micro Devices, Inc. Nitrogen treatment for metal-silicide contact
US5725740A (en) * 1995-06-07 1998-03-10 Applied Materials, Inc. Adhesion layer for tungsten deposition
US5552340A (en) 1995-10-27 1996-09-03 Vanguard International Semiconductor Corp. Nitridation of titanium, for use with tungsten filled contact holes
US5686796A (en) * 1995-12-20 1997-11-11 International Business Machines Corporation Ion implantation helicon plasma source with magnetic dipoles

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013058565A (ja) * 2011-09-07 2013-03-28 Ulvac Japan Ltd バリアメタル層の形成方法、及び、バリアメタル層の形成装置

Also Published As

Publication number Publication date
EP1016130A1 (en) 2000-07-05
TW490509B (en) 2002-06-11
US6221792B1 (en) 2001-04-24
KR20010013723A (ko) 2001-02-26
US20010002326A1 (en) 2001-05-31
WO1998059366A1 (en) 1998-12-30

Similar Documents

Publication Publication Date Title
JP2002506568A (ja) 高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化
US7919142B2 (en) Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same
US6638810B2 (en) Tantalum nitride CVD deposition by tantalum oxide densification
KR100462097B1 (ko) 질화티탄막의 형성 방법 및 당해 방법으로 제조된 생성물
KR100696143B1 (ko) 기판위에 두꺼운 질화 티타늄층을 성막하는 방법
US6040021A (en) Plasma CVD process for metal films and metal nitride films
EP1094504A2 (en) PVD-IMP tungsten and tungsten nitride as a liner, barrier, and/or seed layer
EP1122774A1 (en) Plasma treatment of a titanium nitride film formed by chemical vapor deposition
US20030072884A1 (en) Method of titanium and titanium nitride layer deposition
US20030049931A1 (en) Formation of refractory metal nitrides using chemisorption techniques
JP2011139093A (ja) 密着性を改良するための基板のプラズマアニーリング
JPS61179872A (ja) マグネトロンエンハンスプラズマ補助式化学蒸着のための装置ならびに方法
US20090242385A1 (en) Method of depositing metal-containing films by inductively coupled physical vapor deposition
US20020168468A1 (en) Method of TiSiN deposition using a chemical vapor deposition (CVD) process
US6155198A (en) Apparatus for constructing an oxidized film on a semiconductor wafer
KR101759769B1 (ko) Ｔｉ막의 성막 방법
TW201826345A (zh) 成膜方法
TW200823971A (en) Method and system for depositing barrier layer onto substrate
US20060127601A1 (en) Film formation method
KR101713336B1 (ko) 라이너의 제거 처리 방법
US20020033533A1 (en) Interconnect structure for use in an integrated circuit
Chiu et al. Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl 2 helicon-wave plasma
WO2003097898A1 (fr) Procede permettant d&#39;introduire un gaz dans un appareil de traitement comportant une partie pomme de douche
CN101266940A (zh) 在衬底上沉积阻障层的方法与系统
JPH07263359A (ja) 薄膜の形成方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050622

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050805

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20060228