JP2002368154A - Chip-size package - Google Patents

Chip-size package

Info

Publication number
JP2002368154A
JP2002368154A JP2001168753A JP2001168753A JP2002368154A JP 2002368154 A JP2002368154 A JP 2002368154A JP 2001168753 A JP2001168753 A JP 2001168753A JP 2001168753 A JP2001168753 A JP 2001168753A JP 2002368154 A JP2002368154 A JP 2002368154A
Authority
JP
Japan
Prior art keywords
interposer
hole
solder resist
chip
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001168753A
Other languages
Japanese (ja)
Other versions
JP4593831B2 (en
Inventor
Seiichiro Yoshida
誠一郎 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Japan Radio Co Ltd
Original Assignee
New Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Japan Radio Co Ltd filed Critical New Japan Radio Co Ltd
Priority to JP2001168753A priority Critical patent/JP4593831B2/en
Publication of JP2002368154A publication Critical patent/JP2002368154A/en
Application granted granted Critical
Publication of JP4593831B2 publication Critical patent/JP4593831B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a CSP which is configured easily and has high mounting characteristics and reliability. SOLUTION: In a chip-size package is made of a printed wiring board, and is provided with an interposer where a through-hole penetrating the front and rear surfaces and a conductor pattern electrically connected to the through-hole are formed, and sealing resin which protects a semiconductor chip mounted on the surface of the interposer, a solder resist is applied so as to cover only the conductor pattern which excludes a part electrically connected to the semiconductor chip.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、インターポーザを
使用したチップサイズパッケージに関し、特に実装性や
実装信頼性、耐リフロー性を高めたものに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip size package using an interposer, and more particularly to a package having improved mountability, mounting reliability and reflow resistance.

【0002】[0002]

【従来の技術】インターポーザを使用したチップサイズ
パッケージ(Chip Size Package以下、CSPと呼ぶ)
には、インターポーザ上の電極にはんだボールを接着さ
せたボールグリッドアレイ(Ba11 Grid Array以下、B
GAと呼ぶ)とはんだボールを使用しないランドグリッ
ドアレイ(Land Grid Array以下、LGAと呼ぶ)があ
る。いずれの電極構造も電極をインターポ一ザ裏面にマ
トリックス状に配置し、これまでの四方向からのみ電極
を取り出すクァッドフラットパッケージ(QFP:Quad
Flat Package)よりも小さい面積で多くの電極数に対
応できる。従って、ピン数増加に伴うパッケージサイズ
の増大化が顕著ではなくなり、半導体チップのサイズと
パッケージサイズの面積比を小さくすることができる。
2. Description of the Related Art A chip size package using an interposer (hereinafter referred to as a CSP).
Is a ball grid array (Ba11 Grid Array or less, B
There is a land grid array (hereinafter referred to as LGA) that does not use solder balls. In each of the electrode structures, the electrodes are arranged in a matrix on the back surface of the interposer, and a quad flat package (QFP: Quad) in which the electrodes are taken out only from the previous four directions.
It can handle a large number of electrodes with an area smaller than that of the Flat Package). Therefore, the increase in the package size due to the increase in the number of pins is not remarkable, and the area ratio between the size of the semiconductor chip and the package size can be reduced.

【0003】特に、LGAは実装基板との接続にはんだ
ボールを使わず、ランドと呼ばれる平面電極を用いるた
め、コスト的に有利である。さらに、LGAの中でもイ
ンターポーザとして単層のプリント配線板(Print Circ
uit Board以下、PCBと呼ぶ)を用いたものは、セラ
ミックを用いたものに比較し、安価であり、しかも薄く
しても壊れにくいためパッケージをより薄くすることが
可能である。
[0003] In particular, the LGA does not use solder balls for connection to a mounting substrate, but uses a planar electrode called a land, and is therefore advantageous in terms of cost. Furthermore, a single-layer printed circuit board (Print Circ) is used as an interposer in LGA.
A device using a uit board (hereinafter referred to as a PCB) is less expensive than a device using a ceramic, and is hardly broken even when thinned, so that the package can be made thinner.

【0004】図7に示す側面断面はその一例を示すLG
A型のCSPを示す。本図において、(a)は側面断面
を、(b)は裏面をそれぞれ示し、1はPCBからなる
インターポーザ、2はインターポーザ1上にダイボンド
にて搭載された半導体チップ、3はボンディングワイ
ヤ、4は半導体チップを被覆する封止樹脂、6a及び6
bはランド、7は半導体チップ2接着のためのダイアタ
ッチ材、8ははんだレジスト、10はインターポーザ表
裏面を貫通するスルーホールを示す。
FIG. 7 is a side sectional view showing an example of an LG
Fig. 9 shows a type A CSP. In this figure, (a) is a side cross section, and (b) is a back surface, respectively, 1 is an interposer made of PCB, 2 is a semiconductor chip mounted on the interposer 1 by die bonding, 3 is a bonding wire, and 4 is a bonding wire. Sealing resin for covering the semiconductor chip, 6a and 6
b is a land, 7 is a die attach material for bonding the semiconductor chip 2, 8 is a solder resist, and 10 is a through hole penetrating the front and back surfaces of the interposer.

【0005】本図(a)に示すように、半導体チップ2
はインターポーザ1上に搭載され、ワイヤボンディング
によって半導体チップ2とランド6aを接続し、インタ
ーポーザの表面と裏面の導通をとるスルーホール10を
介して、インターポーザ1裏面のランド6bに接続でき
るよう構成されている。この例は、電極をマトリックス
状に配置することによりLGAを構成している。このた
め、多ピンにもかかわらずパッケージサイズを小さくす
ることができる。
[0005] As shown in FIG.
Is mounted on the interposer 1, connects the semiconductor chip 2 and the land 6a by wire bonding, and is configured to be connectable to the land 6b on the back surface of the interposer 1 through a through hole 10 for conducting between the front surface and the back surface of the interposer. I have. In this example, an LGA is configured by arranging electrodes in a matrix. Therefore, the package size can be reduced despite the large number of pins.

【0006】また、本図(b)に示すように、斜線で示
すはんだレジスト8がインターポーザ1裏面のランド6
bを除く部分に被着され、さらにスルーホール10内に
充填された構成となっている。なお、インターポーザ1
の表面でも同様な構成であり、ランド6aを除く部分に
はんだレジスト8が被着されている。
Further, as shown in FIG. 1B, the solder resist 8 indicated by oblique lines is applied to the land 6 on the back surface of the interposer 1.
The structure is applied to portions other than b, and is further filled in the through hole 10. In addition, interposer 1
Has a similar configuration, and a solder resist 8 is applied to portions other than the lands 6a.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、半導体
チップ2搭載面のみに封止樹脂4が形成されているた
め、封止樹脂4と半導体チップ2や封止樹脂4とインタ
ーポーザ1との密着性が強くない。従って、実装される
までにはんだレジスト8や封止樹脂4に吸収された水分
が、マザーボード等の実装基板へはんだ実装される際の
温度ストレスにより爆発的に蒸発し、封止樹脂4と半導
体チップ2の界面や封止樹脂4とインターポーザ1の界
面に剥離やクラックを発生させてしまう。吸収された水
分量と熱ストレスによる剥離やクラックの発生は、例え
ばJEDEC規格でレベル分けされている。この規格項
目は、耐リフロー性または耐湿性といい、CSPの多く
はレベル3である。最高レベルであるレベル1をクリア
することができない。
However, since the sealing resin 4 is formed only on the surface on which the semiconductor chip 2 is mounted, the adhesion between the sealing resin 4 and the semiconductor chip 2 or between the sealing resin 4 and the interposer 1 is reduced. Not strong. Therefore, the moisture absorbed by the solder resist 8 and the sealing resin 4 before the mounting is explosively evaporated due to a temperature stress when the solder is mounted on a mounting substrate such as a motherboard, and the sealing resin 4 and the semiconductor chip are removed. 2 and the interface between the sealing resin 4 and the interposer 1 may cause peeling or cracking. The occurrence of peeling and cracking due to the absorbed water amount and thermal stress is classified into levels according to, for example, JEDEC standards. This standard item is called reflow resistance or moisture resistance, and most CSPs are at level 3. You cannot clear the highest level, Level 1.

【0008】また、上記図7のような構造のパッケージ
では、インターポーザ裏面のランドとなる部分以外の導
体パターンをはんだレジストで被覆するため、ランド6
bがはんだレジスト8よりも内側に配置される。即ち、
ランド6aは凹んだ形状となり、実装基板への実装性お
よび実装信頼性がBGAよりも劣ることが明らかであ
る。従って、はんだが少なければ実装基板上のパターン
とランドが十分に接続されず、逆にはんだの量を多くし
た場合にははんだブリッジが起こりやすい。これは、実
装基板とランド6aの間隙が精度の低いはんだレジスト
8の厚さに依存するためであり、このことは、CSPの
ように寸法が小さく、精密な電子部品においては、大き
な欠点となってしまう。本発明は、上記問題点を解消
し、容易に構成でき、しかも実装性や実装信頼性を高め
ることのできるCSPを提供することを目的とする。
In the package having the structure as shown in FIG. 7, the conductor pattern other than the land portion on the back surface of the interposer is covered with the solder resist.
b is arranged inside the solder resist 8. That is,
The land 6a has a concave shape, and it is clear that the mountability and mounting reliability on the mounting board are inferior to BGA. Therefore, if the amount of solder is small, the pattern on the mounting board and the land are not sufficiently connected. Conversely, if the amount of solder is increased, a solder bridge is likely to occur. This is because the gap between the mounting substrate and the land 6a depends on the thickness of the solder resist 8 with low precision, which is a major drawback in small electronic components such as CSP and precision electronic components. Would. SUMMARY OF THE INVENTION It is an object of the present invention to provide a CSP that can solve the above-mentioned problems, can be easily configured, and can improve the mountability and the mounting reliability.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するため
に、第1の発明は、プリント配線板からなり、表裏面を
貫通するスルーホール及び表面に設けられ該スルーホー
ルと電気的に接続する導体パターンが形成されたインタ
ーポーザと、前記インターポーザ表面に搭載された半導
体チップを保護する封止樹脂とを具備するチップサイズ
パッケージにおいて、前記半導体チップとの電気的接続
を行う部分を除く前記導体パターンの、表面部及び略全
側面部のみを被覆するようはんだレジストが被着されて
いることを特徴とする。
According to a first aspect of the present invention, there is provided a printed wiring board having a through hole penetrating through the front and back surfaces, and a through hole provided on the front surface and electrically connected to the through hole. In a chip size package including an interposer on which a conductor pattern is formed and a sealing resin for protecting a semiconductor chip mounted on the surface of the interposer, the conductor pattern excluding a portion for making an electrical connection with the semiconductor chip. , A solder resist is applied so as to cover only the surface portion and substantially all side portions.

【0010】かかる構成により、封止樹脂との密着性が
最も高いインターポーザ基材部分が露出し、最も密着性
の低い導体パターンをそれよりも密着性が高いはんだレ
ジストで被覆することによって、封止樹脂の耐剥離性を
高めることができる。
[0010] With this configuration, the interposer base portion having the highest adhesion to the sealing resin is exposed, and the conductor pattern having the lowest adhesion is covered with a solder resist having higher adhesion, thereby encapsulating. The peel resistance of the resin can be improved.

【0011】第2の発明は、前記第1の発明の前記スル
ーホール内の全てに樹脂を充填した構成としたものであ
る。
According to a second aspect of the present invention, in the first aspect, the entire inside of the through hole is filled with a resin.

【0012】かかる構成により、ソルダーレジストや封
止樹脂のスルーホール内への流れ込みが防止される。
With this configuration, it is possible to prevent the solder resist and the sealing resin from flowing into the through holes.

【0013】第3の発明は、前記第2の発明の前記イン
ターポーザ裏面の前記スルーホール開口から露出した前
記樹脂上にわたってメッキパターンを形成し、前記イン
ターポーザ裏面にはんだレジストを被着しない構成とし
たものである。
According to a third aspect of the present invention, a plating pattern is formed on the resin exposed from the through hole opening on the back surface of the interposer of the second aspect, and a solder resist is not attached to the back surface of the interposer. It is.

【0014】かかる構成により、スルーホールと電極を
繋いでいた導体パターンが不要になり、その導体パター
ン及びスルーホールを被覆するためのはんだレジストを
省略することができる。また、厚さ精度の低いはんだレ
ジストがインターポーザ裏面に存在しないことで、メッ
キパターンでも十分に応力吸収性の高い突出したランド
を形成することができる。
With this configuration, the conductor pattern connecting the through hole and the electrode becomes unnecessary, and the solder resist for covering the conductor pattern and the through hole can be omitted. Further, since no solder resist having low thickness accuracy exists on the back surface of the interposer, a protruding land having sufficiently high stress absorption can be formed even with a plating pattern.

【0015】[0015]

【発明の実施の形態】以下、本発明の実施の形態を実施
例及び図面を用いて説明する。なお、複数の図面にわた
って同一又は相当するものには同一の符号を付し、説明
の重複を避けた。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to examples and drawings. It is to be noted that the same or corresponding components are denoted by the same reference symbols throughout a plurality of drawings, and overlapping description will be avoided.

【0016】図1は第1の発明の一実施例を示し、図1
(a)はインターポーザ表面を、図1(b)は側面の部
分断面をそれぞれ示す。本図において、1はインターポ
ーザ、6aはランド、8ははんだレジストを示す。
FIG. 1 shows an embodiment of the first invention, and FIG.
(A) shows the surface of the interposer, and FIG. 1 (b) shows a partial cross section of the side. In this figure, 1 indicates an interposer, 6a indicates a land, and 8 indicates a solder resist.

【0017】本図(a)に示すように、はんだレジスト
8は、ランド6a及びスルーホール10の開口部からな
る導体パターンを被覆するよう被着されている。但し、
本図(a)では図示省略しているが、本例の場合、半導
体チップのマウントはダイボンド、ワイヤーボンドによ
ってなされているため、本図(b)に示したようにワイ
ヤのステッチボンディング箇所のはんだレジストは選択
的に除去されている。
As shown in FIG. 1A, the solder resist 8 is applied so as to cover the conductor pattern including the land 6a and the opening of the through hole 10. However,
Although not shown in FIG. 2A, in this example, the semiconductor chip is mounted by die bonding and wire bonding, and therefore, as shown in FIG. The resist has been selectively removed.

【0018】インターポーザ1は従来例で示したものと
同様、PCBであり、例えばBTレジンを基材とするも
のである。導体パターンは、PCB上に被着した銅箔を
エッチングしてパターニングしたものやメッキ層からな
る。従って、エポキシ樹脂等からなる封止樹脂4との密
着性は、インターポーザ1の基材>はんだレジスト8>
導体パターンの順で強い。
The interposer 1 is a PCB similar to that of the conventional example, and is made of, for example, BT resin as a base material. The conductor pattern is formed by etching a copper foil applied on a PCB and patterning the copper foil or by a plating layer. Therefore, the adhesion with the sealing resin 4 made of epoxy resin or the like is determined by the base material of the interposer 1> the solder resist 8>
Strong in order of conductor pattern.

【0019】本例はこのような構造であるため、封止樹
脂4と最も密着性が低い導体パターンがはんだレジスト
8によって被覆され、それ以外は最も密着性が高いイン
ターポーザ1の基材が露出することになる。このように
することにより、封止樹脂4との密着性が従来よりも高
く、実装時に熱ストレスがかかっても剥離やクラックを
発生させないようにすることができる。なお、はんだレ
ジストは、導体パターン表面のみでなく、印刷精度を考
慮して、その略全側面も被覆するよう被着している。
In this embodiment, the conductor pattern having the lowest adhesion to the sealing resin 4 is covered with the solder resist 8, and the base material of the interposer 1 having the highest adhesion is exposed. Will be. By doing so, adhesion to the sealing resin 4 is higher than before, and peeling and cracking can be prevented even if thermal stress is applied during mounting. The solder resist is applied so as to cover not only the surface of the conductor pattern but also substantially all side surfaces in consideration of printing accuracy.

【0020】図2は第2の発明の一実施例を示す図であ
り、スルーホール10内に充填樹脂5が充填された例を
示す。充填樹脂5は、例えば熱硬化性樹脂に溶剤を混ぜ
て適度な流動性を持たせたものをスルーホールメッキ後
にスクリーン印刷法により充填し、加熱後表面研磨して
形成する。このようにスルーホール10内に充填樹脂5
が充填されているため、はんだレジスト8を形成する工
程で、液状レジストを使用しても、スルーホール内に入
り込んでインターポーザ1裏面に流出することがない。
また、封止樹脂4を形成する樹脂封止工程においても、
樹脂がスルーホールを通って裏面に抜けないため、バリ
の発生がない。また、図示のようにスルーホール10上
にメッキ等でランド6aを重畳して形成することができ
るので、インターポーザ表面の導体パターン部分を小さ
くすることができ、半導体チップをフリップチップボン
ディングする場合には特に有効である。
FIG. 2 is a view showing one embodiment of the second invention, and shows an example in which a filling resin 5 is filled in a through hole 10. As shown in FIG. The filling resin 5 is formed, for example, by mixing a solvent with a thermosetting resin to have an appropriate fluidity, filling the through-hole plating with a screen printing method, heating and polishing the surface after heating. In this way, the filling resin 5
Is filled, so that even if a liquid resist is used in the step of forming the solder resist 8, it does not enter the through hole and flow out to the back surface of the interposer 1.
Also, in the resin sealing step of forming the sealing resin 4,
Since the resin does not pass through the through hole to the back surface, there is no burr. Further, as shown in the figure, the land 6a can be formed on the through-hole 10 by plating or the like so as to overlap, so that the conductor pattern portion on the surface of the interposer can be reduced. Especially effective.

【0021】表1は、図3(a)〜(c)に示したN
o,1〜No,3の3つのはんだレジストパターンが表
面に形成されたインターポーザをそれぞれ24枚ずつ計
72枚用意し、JEDEC Level-1の条件で吸湿・リフロー
処理をしたときの合格(Pass)及び不合格(Fai
l)枚数を記録したものである。なお、図3において、
網掛け部がはんだレジストを塗布した部分を示す。
Table 1 shows the values of N shown in FIGS. 3 (a) to 3 (c).
A total of 72 interposers, each having 24 solder resist patterns o, 1 to No, and 3 formed on the surface, were prepared, and a pass (Pass) was obtained when moisture absorption / reflow treatment was performed under JEDEC Level-1 conditions. And failed (Fai
l) The number of sheets is recorded. In FIG. 3,
Shaded portions indicate portions where the solder resist is applied.

【0022】[0022]

【表1】 [Table 1]

【0023】本表に示すとおり、上記実施例と類似の本
発明に係るインターポーザ(No,3)には不合格品が
見られず、その他、はんだレジストを全面に塗布したも
の(No,2)に不合格品が2枚発生し、導体パターン
を除く全面にはんだレジストを塗布したもの(No,
1)に至っては2枚しか合格品が発生していない。
As shown in this table, no rejected product was found in the interposer (No. 3, 3) according to the present invention, which was similar to the above-mentioned embodiment. In the case where two rejects were generated and solder resist was applied to the entire surface except for the conductor pattern (No.
In the case of 1), only two acceptable products were generated.

【0024】図4は、第3の発明をLGAに適用した場
合の実施例を示し、図4(a)はインターポーザ表面
を、図4(b)は側面断面を、図4(c)は裏面をそれ
ぞれ示す。本図に示すように、インターポーザ1に形成
されたスルーホール10内の全てに上述した充填樹脂5
が充填されており、インターポーザ表面にステッチボン
ド用のランド6aが、裏面に実装基板接続用のランド6
bが形成されている。このランド6a及びランド6b
は、スルーホール10開口及びスルーホール充填樹脂5
上にわたって形成されており、スルーホール10が孔の
見えないいわゆるヴィアホール(ブラインドスルーホー
ル)となっている。これは上記第2の発明の実施例で説
明したように充填樹脂5を形成した後、PCBの表裏面
全面にメッキを施し、ホトリソグラフ法にてパターニン
グすることで得ることができる。
FIG. 4 shows an embodiment in which the third invention is applied to an LGA. FIG. 4 (a) shows an interposer surface, FIG. 4 (b) shows a side cross section, and FIG. 4 (c) shows a back surface. Are respectively shown. As shown in the figure, the filling resin 5 described above is filled in all of the through holes 10 formed in the interposer 1.
Lands 6a for stitch bonding on the surface of the interposer, and lands 6 for connecting the mounting substrate on the back surface.
b is formed. This land 6a and land 6b
Is a through hole 10 opening and a through hole filling resin 5
The through hole 10 is a so-called via hole (blind through hole) in which the hole is not visible. This can be obtained by forming the filling resin 5 as described in the embodiment of the second invention, plating the entire front and back surfaces of the PCB, and patterning the same by photolithography.

【0025】このような構成であるため、ランドとスル
ーホールを直に接続することができ、従来例で必要とさ
れたランドとスルーホール間を繋ぐ導体パターンが不要
となる。特にインターポーザ裏面では、その導体パター
ンやスルーホールへのはんだ付着を阻止する必要がない
ため、これらを被覆するためのはんだレジストが不要に
なる。インターポーザ1の裏面に被着したメッキ層から
なるランド6bはインターポーザ1の基材表面から少な
くとも0.1mm程度突出させることができる。これは
寸法の小さいCSPでは十分に応力吸収性能を発揮する
ため、そのままLGAのランドとして使用することがで
きる。従来構成では、ランドを突出させようとすると、
塗布したソルダーレジストの露光をスルーホールに充填
された部分にまで行わなければならず、現像によりスル
ーホールに充填したソルダーレジストを必要以上に除去
してしまうので、スルーホール内に入り込んだ封止樹脂
が裏面に露出してしまい、外観上不具合が発生してしま
うが、本例によればそのような不具合は発生し得ない。
With such a configuration, the land and the through hole can be directly connected, and the conductor pattern for connecting the land and the through hole, which is required in the conventional example, becomes unnecessary. Particularly on the back surface of the interposer, it is not necessary to prevent the solder from adhering to the conductor pattern and the through-hole, so that a solder resist for covering these is not required. The land 6b made of a plating layer attached to the back surface of the interposer 1 can protrude at least about 0.1 mm from the surface of the base material of the interposer 1. Since a CSP having a small size sufficiently exhibits stress absorption performance, it can be used as an LGA land as it is. In the conventional configuration, if you try to project the land,
Since the exposed solder resist must be exposed to the part filled in the through hole, the solder resist filled in the through hole is removed more than necessary by development, so the sealing resin that has entered the through hole Is exposed on the back surface, causing a problem in appearance, but according to the present example, such a problem cannot occur.

【0026】また、厚さ精度の低いはんだレジストをイ
ンターポーザ1の裏面全面から排除することで、はんだ
レジストに起因するはんだブリッジの問題も解消される
ため、実装時に使うはんだの量を所定量に保ちさえすれ
ば実装上の不具合も抑制されることになる。
Also, by eliminating the solder resist having low thickness accuracy from the entire back surface of the interposer 1, the problem of the solder bridge caused by the solder resist can be solved. As long as this is done, defects in mounting will also be suppressed.

【0027】図5は、第3の発明の別の実施例を示す断
面図である。本図において、4aは接続部保護のための
アンダーフィル、9はフリップチップボンディング用バ
ンプを示し、半導体チップ2をインターポーザ1上にフ
リップチップボンディングする構成を示したものであ
る。
FIG. 5 is a sectional view showing another embodiment of the third invention. In this figure, reference numeral 4a denotes an underfill for protecting a connection portion, 9 denotes a flip-chip bonding bump, and shows a configuration in which the semiconductor chip 2 is flip-chip bonded onto the interposer 1.

【0028】図示のような構成であっても、前述したも
のと同様の効果が得られる。即ち、インターポーザと半
導体チップの接続方法によらず、ワイヤボンディングで
も、フリップチップボンディングでも、またはその他の
方法でも同様の効果を得ることができる。
Even with the configuration shown in the drawing, the same effects as those described above can be obtained. That is, the same effect can be obtained by wire bonding, flip chip bonding, or another method regardless of the method of connecting the interposer and the semiconductor chip.

【0029】図6は、第3の発明をBGAに適用した場
合の一実施例を示し、図6(a)は側面断面を、図6
(b)は裏面をそれぞれ示す。本図において、11はラ
ンド6b上に接着されたはんだボールを示す。
FIG. 6 shows an embodiment in which the third invention is applied to a BGA. FIG. 6 (a) is a side sectional view and FIG.
(B) shows the back surface respectively. In this figure, reference numeral 11 denotes a solder ball adhered on the land 6b.

【0030】図示のような構成であっても、前述したも
のと同様の効果が得られる。即ち、電極構造によらず、
LGAでも、BGAでも同様の効果を得ることができ
る。
Even with the configuration shown in the drawing, the same effects as those described above can be obtained. That is, regardless of the electrode structure,
Similar effects can be obtained with LGA or BGA.

【0031】[0031]

【発明の効果】以上説明したように、本発明のチップサ
イズパッケージは、インターポーザ表面のはんだレジス
トを導体パターンの被覆のみに使用したことにより、封
止樹脂との密着性を高くすることができ、実装時の熱ス
トレスで界面剥離を発生させない。
As described above, in the chip size package of the present invention, since the solder resist on the surface of the interposer is used only for covering the conductor pattern, the adhesiveness with the sealing resin can be improved. Does not cause interface delamination due to thermal stress during mounting.

【0032】また、スルーホールに樹脂を充填してある
ため、そこへ流動性のあるものが入りこまない。即ち、
ドライフィルム型レジストでも液状レジストでも使用可
能であり、金型を使わなくとも樹脂封止が可能となる。
その上、ステッチボンド用またはフリップチップボンド
用の電極をスルーホール直上に設けることができるの
で、簡単な構成でファインピッチの電極を有するCSP
を提供することができる。
Further, since the through-hole is filled with resin, there is no possibility that a material having fluidity enters the through-hole. That is,
Either a dry film resist or a liquid resist can be used, and resin sealing can be performed without using a mold.
In addition, an electrode for stitch bonding or flip-chip bonding can be provided directly above the through-hole, so a CSP having fine pitch electrodes with a simple configuration
Can be provided.

【0033】また、インターポーザ裏面のスルーホール
開口から露出した前記樹脂上にわたってメッキパターン
を形成し、インターポーザ裏面にはんだレジストを被着
しないため、メッキでも十分な応力吸収性能を有する電
極を形成でき、しかも従来構成より実装状態がはんだ量
等に影響されずらく、そのため実装性や実装信頼性を高
くすることができる。
Further, since a plating pattern is formed on the resin exposed from the through-hole opening on the back surface of the interposer and no solder resist is applied on the back surface of the interposer, an electrode having sufficient stress absorbing performance can be formed even by plating. The mounting state is less affected by the amount of solder and the like than in the conventional configuration, so that the mountability and the mounting reliability can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】第1の発明の実施例を示す図である。FIG. 1 is a diagram showing an embodiment of the first invention.

【図2】第2の発明の実施例を示す平面図および断面図
である。
FIG. 2 is a plan view and a sectional view showing an embodiment of the second invention.

【図3】本発明の特性を調べるために使用した試料の平
面図である。
FIG. 3 is a plan view of a sample used for examining characteristics of the present invention.

【図4】第3の発明の実施例を示す平面図および断面図
である。
FIG. 4 is a plan view and a sectional view showing an embodiment of the third invention.

【図5】第3の発明の他の実施例を示す平面図および断
面図である。
FIG. 5 is a plan view and a cross-sectional view showing another embodiment of the third invention.

【図6】第3の発明のさらに他の実施例を示す平面図お
よび断面図である。
FIG. 6 is a plan view and a cross-sectional view showing still another embodiment of the third invention.

【図7】従来のLGA型のCSPを示す図である。FIG. 7 is a diagram showing a conventional LGA-type CSP.

【符号の説明】[Explanation of symbols]

1:インターポーザ、2:半導体チップ、3:ボンディ
ングワイヤ、4:封止樹脂、4a:アンダーフィル樹
脂、5:スルーホール充填樹脂、6:ランド、6a:配
線、7:ダイアタッチ材、8:はんだレジスト、9:フ
リップチップボンディング用バンプ、10:スルーホー
ル、11:半田ボール
1: interposer, 2: semiconductor chip, 3: bonding wire, 4: sealing resin, 4a: underfill resin, 5: through hole filling resin, 6: land, 6a: wiring, 7: die attach material, 8: solder Resist, 9: Bump for flip chip bonding, 10: Through hole, 11: Solder ball

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 プリント配線板からなり、表裏面を貫通
するスルーホール及び表面に設けられ該スルーホールと
電気的に接続する導体パターンが形成されたインターポ
ーザと、前記インターポーザ表面に搭載された半導体チ
ップを保護する封止樹脂とを具備するチップサイズパッ
ケージにおいて、 前記半導体チップとの電気的接続を行う部分を除く前記
導体パターンの、表面部及び略全側面部のみを被覆する
ようはんだレジストが被着されていることを特徴とする
チップサイズパッケージ。
An interposer comprising a printed wiring board, a through hole passing through the front and back surfaces, and a conductor pattern formed on the front surface and electrically connected to the through hole, and a semiconductor chip mounted on the interposer surface In a chip size package comprising a sealing resin for protecting the semiconductor pattern, a solder resist is applied so as to cover only a surface portion and substantially all side portions of the conductor pattern except for a portion for making an electrical connection with the semiconductor chip. A chip size package characterized by being made.
【請求項2】 前記スルーホール内の全てに樹脂が充填
されていることを特徴とする請求項1に記載のチップサ
イズパッケージ。
2. The chip size package according to claim 1, wherein the inside of the through hole is filled with a resin.
【請求項3】 前記インターポーザ裏面の前記スルーホ
ール開口から露出した前記樹脂上にわたってメッキパタ
ーンが形成され、前記インターポーザ裏面にはんだレジ
ストが被着されていないことを特徴とする請求項2に記
載のチップサイズパッケージ。
3. The chip according to claim 2, wherein a plating pattern is formed on the resin exposed from the through-hole opening on the back surface of the interposer, and a solder resist is not applied on the back surface of the interposer. Size package.
JP2001168753A 2001-06-04 2001-06-04 Chip size package Expired - Fee Related JP4593831B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001168753A JP4593831B2 (en) 2001-06-04 2001-06-04 Chip size package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001168753A JP4593831B2 (en) 2001-06-04 2001-06-04 Chip size package

Publications (2)

Publication Number Publication Date
JP2002368154A true JP2002368154A (en) 2002-12-20
JP4593831B2 JP4593831B2 (en) 2010-12-08

Family

ID=19010931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001168753A Expired - Fee Related JP4593831B2 (en) 2001-06-04 2001-06-04 Chip size package

Country Status (1)

Country Link
JP (1) JP4593831B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919858B2 (en) 2008-06-12 2011-04-05 Renesas Electronics Corporation Semiconductor device having lands disposed inward and outward of an area of a wiring board where electrodes are disposed

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0327269U (en) * 1989-07-25 1991-03-19
JPH09289262A (en) * 1996-04-22 1997-11-04 Nippon Micron Kk Method of manufacturing electronic parts package
JPH1051110A (en) * 1996-08-07 1998-02-20 Mitsui Petrochem Ind Ltd Printed-wiring board and semiconductor device using it
JPH11186468A (en) * 1997-12-22 1999-07-09 Oki Electric Ind Co Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0327269U (en) * 1989-07-25 1991-03-19
JPH09289262A (en) * 1996-04-22 1997-11-04 Nippon Micron Kk Method of manufacturing electronic parts package
JPH1051110A (en) * 1996-08-07 1998-02-20 Mitsui Petrochem Ind Ltd Printed-wiring board and semiconductor device using it
JPH11186468A (en) * 1997-12-22 1999-07-09 Oki Electric Ind Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919858B2 (en) 2008-06-12 2011-04-05 Renesas Electronics Corporation Semiconductor device having lands disposed inward and outward of an area of a wiring board where electrodes are disposed
US7998796B2 (en) 2008-06-12 2011-08-16 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US8120174B2 (en) 2008-06-12 2012-02-21 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP4593831B2 (en) 2010-12-08

Similar Documents

Publication Publication Date Title
US6252298B1 (en) Semiconductor chip package using flexible circuit board with central opening
US7397129B2 (en) Interposers with flexible solder pad elements
US6404062B1 (en) Semiconductor device and structure and method for mounting the same
US6347037B2 (en) Semiconductor device and method of forming the same
JP3345541B2 (en) Semiconductor device and manufacturing method thereof
US6734557B2 (en) Semiconductor device
JPH11297889A (en) Semiconductor package, mounting board and mounting method by use of them
JP3851797B2 (en) Ball grid array package and circuit board used therefor
KR100601762B1 (en) flip chip bonding fabrication method using non-conductive adhesive
JP4397111B2 (en) Chip size package
JP3330468B2 (en) Wiring board and semiconductor device
JPH0637233A (en) Semiconductor integrated circuit device and its manufacturing method
JP4593831B2 (en) Chip size package
JPH09331004A (en) Semiconductor device
JP2000195890A (en) Manufacture of semiconductor device
JP3684517B2 (en) Semiconductor device
JP3279765B2 (en) Ceramic package
JP2001267452A (en) Semiconductor device
JPH08316360A (en) Ic mounting structure
JPH10209321A (en) Semiconductor integrated circuit device
JPH0645763A (en) Printed wiring board
JPH09186422A (en) Semiconductor device
JP2004014568A (en) Semiconductor device
KR100195512B1 (en) Chip scale package and method for manufacturing the same
JP3088391B2 (en) Semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091208

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091222

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100511

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100701

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100716

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100907

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100916

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130924

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4593831

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees