JP2002353393A - Lead frame, semiconductor device and manufacturing method of the semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce warpage of a semiconductor element and a die pad part and surely connect the semiconductor element and a lead terminal part through a electrically conductive member. SOLUTION: In a lead frame provided with the die pad part 52 supporting the semiconductor element 1 and the lead terminal part 54 connectable through the semiconductor element 1 and a gold wire 5, the die pad part 52 is worked into thickness/or shape corresponding to a thermal expansion coefficient difference between the semiconductor element 1 and the die pad part 52. Since stress produced between the semiconductor element 1 and the die pad part 52 can be relieved, as compared with the conventional method, the warpage of the semiconductor element 1 and the die pad part 52 can be reduced even in the case that heat treatment is performed in the manufacturing process of the semiconductor element 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame, a semiconductor device, and a method for manufacturing a semiconductor device, which are preferably applied to a resin-sealed IC or the like subjected to a heat treatment in an assembling process. Specifically, the die pad portion for supporting the semiconductor element is processed into a thickness and / or shape corresponding to the difference in the coefficient of thermal expansion between the semiconductor element and the die pad portion,
A device that can reduce the stress generated between a semiconductor element and a die pad portion, and can reduce the warpage of the semiconductor element and the die pad portion even when subjected to heat treatment in a semiconductor device manufacturing process, as compared with the conventional method. It is.

[0002]

2. Description of the Related Art In recent years, consumers are increasingly demanding higher quality of commercially available electric products, and accordingly, semiconductor devices mounted on these electric products are required to have higher reliability. Improvement is being sought. In order to meet this demand, optimization of process conditions is pursued every day in a semiconductor device manufacturing process.

FIG. 8 is a sectional view showing a configuration example of a semiconductor device 90 according to a conventional example. The semiconductor device includes a semiconductor element 91 and a die pad 9 supporting the semiconductor element 91.
2, a lead terminal portion 93 arranged at a predetermined distance from the die pad portion 92, and a gold wire 94 for electrically connecting the lead terminal portion 93 to the electrode portion of the semiconductor element 91. Have. Further, the semiconductor device 90 has a semiconductor element 91, a die pad portion 92, a gold wire 94, and a mold resin 95 for sealing a part of the lead terminal portion 93.

[0004] Among these constituent members, a die pad portion 9 is provided.
2 and the lead terminal portion 93 are formed by punching a copper alloy plate having a thickness of about 200 μm into a predetermined shape. This copper alloy plate is called a lead frame. This lead frame is widely used especially for a resin-sealed semiconductor device.

A semiconductor device 9 using this lead frame
9A, first, a thermosetting adhesive 96 is applied onto the die pad portion 92, as shown in FIG. 9A. Next, the semiconductor element 91 is mounted on the die pad portion 92 to which the adhesive 96 has been applied. Then, in order to cure the adhesive and join the semiconductor element 91 and the die pad portion 92, as shown in FIG. 9B, the lead frame on which the semiconductor element 91 is mounted is heated at a temperature of about 150 ° C. for 1 to 2 hours. I do.

By this heat treatment, the volume of the semiconductor element 91 and the die pad portion 92 is increased in accordance with the respective thermal expansion coefficients. The die pad portion 92 has a larger thermal expansion coefficient than the semiconductor element 91. therefore,
The die pad portion 92 is made to expand more than the semiconductor element 91.

The semiconductor element 91 and the die pad 9
With the 2 expanded, the adhesive 96 dries and cures.
Thereby, the semiconductor element 91 and the die pad portion 92 are joined. After the semiconductor element 91 and the die pad 92 are joined, the semiconductor element 91 and the die pad 92 are naturally cooled to room temperature.

At this time, the semiconductor element 91 and the die pad 92 are contracted by a contraction force corresponding to their respective thermal expansion coefficients. In particular, since the thermal expansion coefficient of the die pad 92 is larger than that of the semiconductor element 91, the degree of contraction thereof is larger.

[0009]

According to the conventional semiconductor device 90, the thickness of the die pad portion 92 is the same as the thickness of the lead terminal portion 93. Therefore, as shown in FIG. 9C, a stress is generated between the semiconductor element 91 and the die pad portion 92 due to a difference in the degree of contraction between the semiconductor element 91 and the die pad portion 92, and the semiconductor element 91 and the die pad portion 92 receive the stress. It is made to warp and deform.

[0010] Such deformation of the semiconductor element 91 and the die pad portion 92 causes a stress on the semiconductor element 91, which may cause disconnection of a wiring pattern in the element 91, generation of cracks in the passivation film, and the like. There is. Further, the relative position between the semiconductor element 91 and the lead terminal 93 may be shifted, and the semiconductor element 91 and the lead terminal 93 may not be electrically connected.

In view of the above, the present invention has been made to solve such a problem, and it is possible to reduce the warpage between the semiconductor element and the die pad portion, and to reliably connect the semiconductor element and the lead terminal portion via a conductive member. It is an object of the present invention to provide a lead frame, a semiconductor device, and a method for manufacturing a semiconductor device that can be connected.

[0012]

An object of the present invention is to provide a lead frame provided with a die pad portion for supporting a semiconductor element and a lead terminal portion connectable to the semiconductor element via a conductive member. The die pad portion is solved by a lead frame for a semiconductor device, wherein the die pad portion is processed into a thickness and / or shape corresponding to a difference in thermal expansion coefficient between the semiconductor element and the die pad portion.

According to the lead frame of the present invention, the stress generated between the semiconductor element and the die pad can be reduced. And the warpage of the die pad portion can be reduced.

According to another aspect of the present invention, there is provided a semiconductor device, comprising: a semiconductor element; a support member for supporting the semiconductor element; a terminal member disposed at a predetermined distance from the support member;
A conductive member that connects the terminal member and the semiconductor element; and that the support member is processed into a thickness and / or a shape corresponding to a difference in thermal expansion coefficient between the semiconductor element and the support member. It is a feature.

According to the semiconductor device of the present invention, the supporting member for supporting the semiconductor element is processed to have a thickness corresponding to the difference in the coefficient of thermal expansion between the semiconductor element and the supporting member. Therefore, since the stress generated between the semiconductor element and the support member can be reduced, the warpage of the semiconductor element and the support member can be reduced even when heat treatment is performed in the manufacturing process of the device, as compared with the conventional method. .

Further, according to a method of manufacturing a semiconductor device according to the present invention, there is provided a method of manufacturing a semiconductor device comprising joining a semiconductor element on a support member and connecting the semiconductor element and a terminal member with a conductive member. The support member is processed into a thickness and / or shape corresponding to a difference in thermal expansion coefficient between the semiconductor element and the support member.

According to the method of manufacturing a semiconductor device according to the present invention, the stress generated between the semiconductor element and the support member can be reduced. In addition, warpage between the semiconductor element and the support member can be reduced.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a lead frame, a semiconductor device, and a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view showing a configuration example of a lead frame 50 according to an embodiment of the present invention. In this embodiment, the die pad portion for supporting the semiconductor element is processed into a thickness and / or shape corresponding to the difference in the coefficient of thermal expansion between the semiconductor element and the die pad part, so that the gap between the semiconductor element and the die pad part is increased. In the semiconductor device and in the case where the semiconductor device is heated during the manufacturing process of the semiconductor device. Can be reliably connected via a conductive member.

The lead frame 50 shown in FIG. 1 is preferably applied to a resin-sealed semiconductor device, and is a frame supporting a semiconductor element. The lead frame 50 is formed, for example, by punching a copper alloy flat plate. The lead frame 50 has a die pad portion 52 for supporting a semiconductor element on its surface. The die pad 52 has a shape corresponding to the semiconductor element to be supported,
It is made in size. The die pad part 52 is, for example,
It is formed in a substantially square shape, and its size is about 4 mm long × 4 mm wide × 120 μm thick.

The lead frame 50 has a lead terminal portion 54. The lead terminal portion 54 can be electrically connected to a semiconductor element mounted on the die pad portion 52 via a conductive member. The lead terminal portions 54 are provided corresponding to the number of electrode portions (hereinafter, also referred to as pads) included in the semiconductor element.

In FIG. 1, for example, twenty lead terminals 54 are provided. These lead terminal portions 54
Are arranged so as to surround the die pad 52 at a distance of about 0.5 mm from the die pad 52. The size of the lead terminal portion 54 is, for example, 2.
It is about 4 mm × width 0.2 mm × thickness 200 μm.

FIGS. 2A and 2B are sectional views of the lead frame 50 shown in FIG. 1 taken along arrows X1-X2 and Y1-Y2. As shown in FIG. 2A, in the lead frame 50, when the thickness of the die pad portion 52 is T1 and the thickness of the lead terminal portion 54 is T2, the thickness T1 of the die pad portion 52 is the thickness of the lead terminal portion 54. It is made thinner than T2.

For example, the thickness of the lead terminal portion 54 is 200
μm, the die pad 52
Has a thickness of about 120 μm. This is for reducing the stress generated between the semiconductor element and the die pad 52 during the heat treatment process due to the difference in the thermal expansion coefficient between the two.

As means for thinning only the die pad portion 52, selective etching with a predetermined chemical solution, selective rolling with a press machine and the like can be mentioned. For example, an acid-resistant tape member is selectively formed on a copper alloy flat plate (hereinafter, also referred to as a copper plate). Next, using the tape member as a mask, the copper plate is selectively etched with a dilute sulfuric acid aqueous solution. Then, the tape member is peeled from the copper alloy plate, and the copper plate is punched into a predetermined shape using the step on the copper plate generated by the etching as a mark. Thereby, the lead frame 50 in which only the die pad portion 52 is thinned can be formed.

As shown in FIG. 2B, after the lower surface 58 of the die pad portion 52 is etched, the upper surface 5 is formed.
It is molded by pressing downward from the 9 side. The upper surface 59 of the die pad portion 52 is formed lower than other portions of the lead frame 50 because the height difference between the pad of the semiconductor element mounted on the upper surface 59 and the lead terminal portion is made as small as possible, and This is in order to reduce the amount of gold wire or the like used to connect.

Next, a semiconductor device 100 according to an embodiment of the present invention will be described. FIG. 3 is a cross-sectional view illustrating a configuration example of the semiconductor device 100 according to the embodiment of the present invention. This semiconductor device 100 is based on the premise that the above-described lead frame 50 is applied.

First, the semiconductor device 100 has a semiconductor element 1 made of silicon or the like. This semiconductor element 1
Is obtained by cutting a silicon wafer on which a number of semiconductor elements are formed. Each of the cut individual semiconductor elements 1 is provided with a plurality of pads for connection to a conductive member. The size of the semiconductor element 1 varies depending on its type and intended use.
It is about 3.0 mm wide x 0.3 mm thick.

The semiconductor device 100 has a die pad 52 which is an example of a support member. The die pad part 52 is a part of the lead frame 50 shown in FIG. The die pad portion 52 shown in FIG. 3 is configured to support the semiconductor element 1 on the upper surface thereof through a thermosetting adhesive 15.

Further, the semiconductor device 100 has a lead terminal portion 54 as an example of a terminal member. The lead terminal portion 54 is a part of the lead frame 50 shown in FIG. Hereinafter, a portion of the lead terminal portion 54 that is sealed with the mold resin is referred to as an internal lead 62, and a portion protruding from the mold resin is referred to as an external lead 64.

The lead-out lead 62 is configured to be insulated from the die pad 52 at a predetermined distance. The internal lead 62 is connected to a pair of pads of the semiconductor element 1 via a conductive member. On the other hand, the external lead 64 is connected to a wiring pattern of a mounting board (not shown) via solder or the like. The vicinity of the distal end of the external lead 64 is formed so as to be parallel to the surface of the mounting board so as to be favorably joined to the wiring pattern of the mounting board. The length of the internal lead 62 is, for example, about 0.75 mm, and the length of the external lead 64 is about 1.65 mm.

The semiconductor device 100 has a gold wire 5 as an example of a conductive member. One end of the gold wire 5 is joined to the pad of the semiconductor element 1, and the other end is joined to the upper surface of the internal lead 62. This allows
The semiconductor element 1 and the lead terminal 54 are electrically connected. The gold wire 5 and the pad of the semiconductor element 1, and the gold wire 5 and the upper surface of the internal lead 62 are joined by pressing and heating each other. The diameter of the gold wire 5 is about 30 μm, and the length is about 2 mm.

Further, the semiconductor device 100 has a molding resin 7. This mold resin 7 is used for the semiconductor element 1
To seal the gold wire 5 and the internal lead 62. With this mold resin 7, the semiconductor element 1, the gold wire 5, and the lead-in lead 62 are shielded from oxygen and moisture in the air, and prevent the progress of oxidation and corrosion.

As described above, the semiconductor device 100 is formed by applying the lead frame 50. Therefore, in the semiconductor device 100 as well, the thickness of the die pad portion 52 is set to be small in order to reduce the stress generated between the semiconductor element 1 and the die pad portion 52 due to the difference in thermal expansion coefficient between the two members in the heat treatment step. The thickness is smaller than the thickness of the lead terminal portion 54.

Next, a method for manufacturing the above-described semiconductor device 100 will be described. 4 and 5 are process diagrams showing a method (Nos. 1 and 2) for manufacturing the semiconductor device 100 according to the embodiment of the present invention. Here, it is assumed that the semiconductor device 100 is manufactured using the lead frame 50 shown in FIG.

First, as shown in FIG. 4A, the above-described lead frame 50 is prepared. Then, a thermosetting adhesive 1 is applied to the upper surface of the die pad portion 52 of the lead frame 50.
5 is applied. After applying the adhesive 15 on the die pad portion 52, the semiconductor element 1
Is pressed against the die pad portion 52. This is performed using a die bonding apparatus generally used in a semiconductor device assembling process.

Next, the thermosetting adhesive 15 sandwiched between the semiconductor element 1 and the die pad portion 52 is subjected to a heat treatment to accelerate the curing of the adhesive 15. The conditions of this heat treatment are, for example, 150 ° C. and about 1 to 2 hours under a nitrogen atmosphere. As described above, when the thermosetting adhesive 15 is heated and dried, the semiconductor element 1 and the die pad portion 52 can be securely joined.

By the way, as shown in FIG. 4B, when the semiconductor element 1 and the die pad 52 are subjected to a heat treatment, the volumes of the semiconductor element 1 and the die pad 52 are increased in accordance with the respective thermal expansion coefficients. This coefficient of thermal expansion α is defined by an equation. α = (dV / dθ) / V ₀ ... V: volume θ: temperature V ₀ : volume at 0 ° C.

At around 150 ° C., the thermal expansion coefficient of silicon is about 2 to 4 × 10 ⁻⁶ , whereas the thermal expansion coefficient of copper is about 16 to 17 × 10 ⁻⁶ . That is, the die pad portion 52 made of a copper alloy has a larger expansion force and a larger contraction force than the semiconductor element 1 made of silicon or the like. The semiconductor element 1 and the die pad 5
Deformation such as warpage occurs in 2.

The present inventors have investigated the relationship between the warpage caused by the difference in the coefficient of thermal expansion and the thickness of the die pad portion 52. That is, a plurality of lead frames 50 having a thickness of about 100 to 200 μm are prepared, the adhesive 15 is applied to the die pad portions 52 of these lead frames 50, and the semiconductor elements 1 are mounted thereon, respectively. It is assumed that the above-described heat treatment is performed.
The thickness of the die pad portion 52 is T1, and the lead terminal portion 54
The relationship between the thickness T1 of the die pad portion 52 at this time and the warpage generated in the die pad portion 52 and the semiconductor element 1 was examined.

According to this, when T1 = T2, FIG.
As shown in A, the semiconductor element 1 and the die pad portion 52 were greatly deformed in a bow shape. Assuming that the amount of warpage (height difference on the surface of the semiconductor element) at this time is H, H was about 50 to 100 μm. On the other hand, in the case of 1/2 × T2 ≦ T1 <T2, as shown in FIG. 6B, the semiconductor element 1 and the die pad portion 52 hardly deformed, and the warpage was 20 μm or less. Further, the thickness of the die pad portion 52 is set to ×× T2 ≦
It was found that if T1 ≦ 2/3 × T2, the amount of warpage can be further reduced. When T1 <Ｔ × T2, the die pad portion 52 was too thin to support the semiconductor element 1 sufficiently.

From these results, the present inventors set the thickness T2 of the lead terminal portion 54 to approximately 200 μm and set the thickness T1 of the die pad portion 52 to approximately 120 μm, which is 60% of T2. Thereby, the warpage between the semiconductor element 1 and the die pad part 52 can be reduced while the semiconductor element supporting function is sufficiently held by the die pad part 52.

As shown in FIG. 4C, the semiconductor substrate 1 and the die pad portion 52 are joined without causing any large warpage, and then one end of the gold wire 5 is connected to the lead terminal portion 54 as shown in FIG. 5A. And the other end is joined to the pad of the semiconductor element 1. Thereby, the semiconductor element 1 and the lead terminal portion 54 can be connected via the gold wire 5. Semiconductor element 1
The bonding between the pad and the gold wire 5 and the bonding between the gold wire 5 and the lead terminal portion 54 are performed by applying pressure and heat to each other using a wire bonding apparatus generally used in a semiconductor device assembly process. Do.

In this wire bonding step, the entire lead frame 50 and the semiconductor element 1 are heated at about 250 ° C. for 3 minutes. In this example, from the result of the investigation on the thickness and warpage of the die pad portion 52, the die pad portion 52
Since the thickness is about μm, deformation of the semiconductor element 1 and the die pad portion 52 can be reduced.

Next, as shown in FIG.
Then, the molding resin 7 is molded so as to cover the internal lead 62 and the gold wire 5, and the semiconductor element 1, the internal lead 62 and the gold wire 5 are sealed. The molding of the molding resin 7 is performed by using a molding device generally used in an assembly process of a semiconductor device. Thus, the semiconductor device 100 shown in FIG. 3 is completed.

In this molding process, the lead frame 50
The entire semiconductor element 1 is heated at about 170 ° C. for 2 to 3 minutes. Also in this case, since the die pad portion 52 is processed to a thickness of about 120 μm based on the above-described investigation result, the deformation of the semiconductor element 1 and the die pad portion 52 can be suppressed.

As described above, according to the lead frame 50 of the present invention, the die pad portion 52 for supporting the semiconductor element 1 has a thickness corresponding to the difference in the coefficient of thermal expansion between the semiconductor element 1 and the lead frame 50. It is formed by processing into a shape.

Therefore, the semiconductor element 1 and the die pad 52
Therefore, the warpage between the semiconductor element 1 and the die pad portion 52 can be reduced even when heat treatment is performed in the manufacturing process of the semiconductor device 100, as compared with the conventional method. Thereby, the deformation of the semiconductor element 1 can be prevented, and the semiconductor element 1 and the lead terminal portion 54 can be reliably connected via the gold wire 5.

In this embodiment, the die pad 52
Has been described in which the thickness of the lead terminal portion 54 is made smaller than that of the lead terminal portion 54 to reduce the stress acting between the semiconductor element 1 and the die pad portion 52. However, the present invention is not limited to this. For example, FIG. As described above, an uneven portion may be provided on the back surface of the die pad portion 52. By partially weakening the strength of the die pad portion 52, the same effect as when the die pad portion 52 is processed to be thin can be obtained.

[0049]

According to the lead frame of the present invention,
The die pad portion for supporting the semiconductor element is processed into a thickness and / or shape corresponding to the difference in the coefficient of thermal expansion between the semiconductor element and the lead frame. With this configuration, the stress generated between the semiconductor element and the die pad portion can be reduced, so that the warpage between the semiconductor element and the die pad portion can be reduced even when the semiconductor device is subjected to heat treatment in the manufacturing process of the semiconductor device, as compared with the conventional method. Can be. Therefore, deformation of the semiconductor element can be prevented, and the semiconductor element and the lead terminal can be reliably connected via the conductive member.

According to the semiconductor device of the present invention,
The support member that supports the semiconductor element is formed by processing the semiconductor element into a thickness corresponding to the difference in the coefficient of thermal expansion between the semiconductor element and the support member. With this configuration, the stress generated between the semiconductor element and the support member can be reduced, so that the warpage between the semiconductor element and the support member can be reduced even when heat treatment is performed in the manufacturing process of the device, as compared with the conventional method. Can be.

Therefore, the positional relationship between the semiconductor element and the terminal member can be maintained in a good condition, so that the semiconductor element and the terminal member can be reliably connected. Further, since stress on the semiconductor element can be reliably reduced, disconnection of a wiring pattern in the element can be prevented. Therefore, the yield of the semiconductor device can be further improved.

Further, according to the method of manufacturing a semiconductor device according to the present invention, the supporting member for supporting the semiconductor element is provided with a thickness and / or a shape corresponding to a difference in thermal expansion coefficient between the semiconductor element and the supporting member. It is processed like With this configuration, the stress generated between the semiconductor element and the support member can be reduced, so that the warpage between the semiconductor element and the support member can be reduced even when the device is subjected to heat treatment in the manufacturing process, as compared with the conventional method. Can be.

Therefore, the positional relationship between the semiconductor element and the terminal member can be maintained well, and the semiconductor element and the terminal member can be reliably connected. In addition, since the stress on the semiconductor element can be surely reduced, the occurrence of cracks in the passivation film of the element can be prevented. Therefore, a semiconductor device with improved transistor operation reliability can be manufactured with good reproducibility. INDUSTRIAL APPLICABILITY The present invention is extremely suitable for application to a resin-sealed IC or the like that is subjected to a heat treatment in an assembly process.

[Brief description of the drawings]

FIG. 1 is a plan view showing a configuration example of a lead frame 50 according to an embodiment of the present invention.

FIGS. 2A and 2B show the lead frame 50 shown in FIG.
2 is a cross-sectional view taken along arrows X1-X2 and Y1-Y2.

FIG. 3 is a cross-sectional view illustrating a configuration example of a semiconductor device 100 according to an embodiment of the present invention.

4A to 4C are process diagrams illustrating a method (part 1) of manufacturing the semiconductor device 100.

FIGS. 5A and 5B are process diagrams illustrating a method (part 2) for manufacturing the semiconductor device 100. FIGS.

FIGS. 6A and 6B are cross-sectional views showing the relationship between the thickness and the warpage of the die pad portion 52. FIGS.

FIG. 7 is a cross-sectional view illustrating another configuration example of the semiconductor device 100.

FIG. 8 is a cross-sectional view illustrating a configuration example of a semiconductor device 90 according to a conventional example.

9A to 9C are process diagrams illustrating a method for manufacturing the semiconductor device 90.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 5 ... Gold wire, 7 ... Mold resin, 15 ... Adhesive, 50 ... Lead frame,
52: die pad portion, 54: lead terminal portion, 1
00 ... Semiconductor device

Claims (9)

[Claims] 1. A lead frame comprising: a die pad portion for supporting a semiconductor element; and a lead terminal portion connectable to the semiconductor element via a conductive member, wherein the die pad portion includes the semiconductor element and A lead frame for a semiconductor device, which is processed into a thickness and / or shape corresponding to a difference in thermal expansion coefficient of the die pad portion. 2. The die pad portion and the lead terminal portion are formed by stamping the same copper alloy plate, the die pad portion is subjected to an etching process, the thickness of the die pad portion is set to T1, and the lead is formed. 2. The lead frame according to claim 1, wherein when the thickness of the terminal portion is T2, the lead frame is processed to satisfy ×× T2 ≦ T1 <T2. 3. The lead frame according to claim 1, wherein an uneven portion is provided on a back surface side of a surface of the die pad portion supporting the semiconductor element. 4. A semiconductor element, a support member for supporting the semiconductor element, a terminal member disposed at a predetermined distance from the support member, and a conductive member for connecting the terminal member and the semiconductor element. A semiconductor device, comprising: a member, wherein the support member is processed into a thickness and / or shape corresponding to a difference in thermal expansion coefficient between the semiconductor element and the support member. 5. The support member and the terminal member are made of a lead frame formed by stamping the same copper alloy plate, a predetermined portion of the lead frame is subjected to an etching process, and the thickness of the support member is reduced. 5. The semiconductor device according to claim 4, wherein when T1 is a thickness of the terminal member and T2 is a thickness of the terminal member, the processing is performed to １ ／ × T2 ≦ T1 <T2. 6. The semiconductor device according to claim 4, wherein an uneven portion is provided on a back surface side of a surface of the support member supporting the semiconductor element. 7. A method of manufacturing a semiconductor device, comprising joining a semiconductor element on a support member and connecting the semiconductor element and a terminal member with a conductive member, wherein the support member is connected to the semiconductor element and the support member. And processing the semiconductor device into a thickness and / or shape corresponding to a difference in thermal expansion coefficient between the semiconductor device and the semiconductor device. 8. The same copper alloy plate is punched to form a lead frame including the support member and the terminal member, and a predetermined portion of the lead frame is subjected to an etching process to reduce a thickness of the support member. The method of manufacturing a semiconductor device according to claim 7, wherein when T1 is set as T2 and the thickness of the terminal member is set as T2, 1/2 × T2 ≦ T1 <T2. 9. The method for manufacturing a semiconductor device according to claim 7, wherein an uneven portion is formed on a back surface side of a surface of said support member supporting said semiconductor element.