JP2002323873A - 発光装置及び電子機器 - Google Patents
発光装置及び電子機器Info
- Publication number
- JP2002323873A JP2002323873A JP2002040963A JP2002040963A JP2002323873A JP 2002323873 A JP2002323873 A JP 2002323873A JP 2002040963 A JP2002040963 A JP 2002040963A JP 2002040963 A JP2002040963 A JP 2002040963A JP 2002323873 A JP2002323873 A JP 2002323873A
- Authority
- JP
- Japan
- Prior art keywords
- tft
- light emitting
- line
- power supply
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 102
- 238000007599 discharging Methods 0.000 description 49
- 239000012535 impurity Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 30
- 239000011229 interlayer Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 239000007789 gas Substances 0.000 description 16
- 238000003860 storage Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 10
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- 238000004544 sputter deposition Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
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- 239000011347 resin Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
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- 229910052698 phosphorus Inorganic materials 0.000 description 4
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- 239000002356 single layer Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- -1 acryl Chemical group 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 150000005072 1,3,4-oxadiazoles Chemical class 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002040963A JP2002323873A (ja) | 2001-02-21 | 2002-02-19 | 発光装置及び電子機器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-44367 | 2001-02-21 | ||
| JP2001044367 | 2001-02-21 | ||
| JP2002040963A JP2002323873A (ja) | 2001-02-21 | 2002-02-19 | 発光装置及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007031491A Division JP2007179066A (ja) | 2001-02-21 | 2007-02-13 | 表示装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002323873A true JP2002323873A (ja) | 2002-11-08 |
| JP2002323873A5 JP2002323873A5 (enExample) | 2005-08-25 |
Family
ID=26609776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002040963A Withdrawn JP2002323873A (ja) | 2001-02-21 | 2002-02-19 | 発光装置及び電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002323873A (enExample) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004086343A1 (ja) * | 2003-03-26 | 2004-10-07 | Semiconductor Energy Laboratory Co., Ltd. | 素子基板及び発光装置 |
| JP2005077812A (ja) * | 2003-09-01 | 2005-03-24 | Tohoku Pioneer Corp | 発光表示パネルの駆動装置および駆動方法 |
| JP2006235614A (ja) * | 2005-01-31 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 表示装置の駆動方法 |
| JP2006284798A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 表示装置及び表示装置の駆動方法 |
| JP2006323376A (ja) * | 2005-04-20 | 2006-11-30 | Semiconductor Energy Lab Co Ltd | 半導体装置及び表示装置 |
| CN1313997C (zh) * | 2003-04-01 | 2007-05-02 | 三星Sdi株式会社 | 有机场致发光显示器、显示面板及其驱动方法 |
| CN1316442C (zh) * | 2003-03-31 | 2007-05-16 | 精工爱普生株式会社 | 象素电路、电子装置及电子机器 |
| CN1323383C (zh) * | 2003-04-01 | 2007-06-27 | 三星Sdi株式会社 | 发光显示器、显示屏及其驱动方法 |
| US7250720B2 (en) | 2003-04-25 | 2007-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| CN100349199C (zh) * | 2002-12-12 | 2007-11-14 | 精工爱普生株式会社 | 电光装置、电光装置的驱动方法及电子设备 |
| CN100361180C (zh) * | 2003-11-29 | 2008-01-09 | 三星Sdi株式会社 | 发光显示设备及其驱动方法 |
| US7332742B2 (en) | 2004-06-29 | 2008-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
| CN100545894C (zh) * | 2005-01-31 | 2009-09-30 | 株式会社半导体能源研究所 | 显示装置、其驱动方法、以及电子设备 |
| US7683860B2 (en) | 2003-12-02 | 2010-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method thereof, and element substrate |
| US8207908B2 (en) | 2005-08-12 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Display module, and cellular phone and electronic device provided with display module |
| JP2012150479A (ja) * | 2004-09-16 | 2012-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| US8760374B2 (en) | 2004-05-21 | 2014-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a light emitting element |
| US10475377B2 (en) | 2008-09-19 | 2019-11-12 | Samsung Display Co., Ltd. | Display device and method of driving the same |
| JP2022031721A (ja) * | 2005-12-02 | 2022-02-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2002
- 2002-02-19 JP JP2002040963A patent/JP2002323873A/ja not_active Withdrawn
Cited By (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100349199C (zh) * | 2002-12-12 | 2007-11-14 | 精工爱普生株式会社 | 电光装置、电光装置的驱动方法及电子设备 |
| CN101127189B (zh) * | 2002-12-12 | 2010-11-10 | 精工爱普生株式会社 | 电光装置、电光装置的驱动方法及电子设备 |
| JP2008171021A (ja) * | 2003-03-26 | 2008-07-24 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US8026877B2 (en) | 2003-03-26 | 2011-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| US9300771B2 (en) | 2003-03-26 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| KR101138806B1 (ko) * | 2003-03-26 | 2012-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 소자기판 및 발광장치 |
| US8659523B2 (en) | 2003-03-26 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| US9698207B2 (en) | 2003-03-26 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| WO2004086343A1 (ja) * | 2003-03-26 | 2004-10-07 | Semiconductor Energy Laboratory Co., Ltd. | 素子基板及び発光装置 |
| US11430845B2 (en) | 2003-03-26 | 2022-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| CN1316442C (zh) * | 2003-03-31 | 2007-05-16 | 精工爱普生株式会社 | 象素电路、电子装置及电子机器 |
| CN1323383C (zh) * | 2003-04-01 | 2007-06-27 | 三星Sdi株式会社 | 发光显示器、显示屏及其驱动方法 |
| CN1313997C (zh) * | 2003-04-01 | 2007-05-02 | 三星Sdi株式会社 | 有机场致发光显示器、显示面板及其驱动方法 |
| US7250720B2 (en) | 2003-04-25 | 2007-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8674908B2 (en) | 2003-04-25 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8139001B2 (en) | 2003-04-25 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8018403B2 (en) | 2003-04-25 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2005077812A (ja) * | 2003-09-01 | 2005-03-24 | Tohoku Pioneer Corp | 発光表示パネルの駆動装置および駆動方法 |
| CN100361180C (zh) * | 2003-11-29 | 2008-01-09 | 三星Sdi株式会社 | 发光显示设备及其驱动方法 |
| US7683860B2 (en) | 2003-12-02 | 2010-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method thereof, and element substrate |
| US8760374B2 (en) | 2004-05-21 | 2014-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a light emitting element |
| US7332742B2 (en) | 2004-06-29 | 2008-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
| US9577008B2 (en) | 2004-09-16 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of the same |
| JP7453295B2 (ja) | 2004-09-16 | 2024-03-19 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2023011671A (ja) * | 2004-09-16 | 2023-01-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2012150479A (ja) * | 2004-09-16 | 2012-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2022177016A (ja) * | 2004-09-16 | 2022-11-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2021152666A (ja) * | 2004-09-16 | 2021-09-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2020008866A (ja) * | 2004-09-16 | 2020-01-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2017083828A (ja) * | 2004-09-16 | 2017-05-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| CN100545894C (zh) * | 2005-01-31 | 2009-09-30 | 株式会社半导体能源研究所 | 显示装置、其驱动方法、以及电子设备 |
| US7733316B2 (en) | 2005-01-31 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method thereof and electronic appliance |
| JP2006235614A (ja) * | 2005-01-31 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 表示装置の駆動方法 |
| CN101630482B (zh) * | 2005-01-31 | 2012-07-18 | 株式会社半导体能源研究所 | 显示装置、其驱动方法、以及电子设备 |
| JP2006284798A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 表示装置及び表示装置の駆動方法 |
| JP2006323376A (ja) * | 2005-04-20 | 2006-11-30 | Semiconductor Energy Lab Co Ltd | 半導体装置及び表示装置 |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| US9773461B2 (en) | 2005-08-12 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Display module, and cellular phone and electronic device provided with display module |
| US8957833B2 (en) | 2005-08-12 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Display module, and cellular phone and electronic device provided with display module |
| US8207908B2 (en) | 2005-08-12 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Display module, and cellular phone and electronic device provided with display module |
| JP2022031721A (ja) * | 2005-12-02 | 2022-02-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2023071759A (ja) * | 2005-12-02 | 2023-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10475377B2 (en) | 2008-09-19 | 2019-11-12 | Samsung Display Co., Ltd. | Display device and method of driving the same |
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