JP2002311588A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002311588A5 JP2002311588A5 JP2001112174A JP2001112174A JP2002311588A5 JP 2002311588 A5 JP2002311588 A5 JP 2002311588A5 JP 2001112174 A JP2001112174 A JP 2001112174A JP 2001112174 A JP2001112174 A JP 2001112174A JP 2002311588 A5 JP2002311588 A5 JP 2002311588A5
- Authority
- JP
- Japan
- Prior art keywords
- improved
- unit
- group
- resist film
- solubility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 4
- 125000006239 protecting group Chemical group 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000003158 alcohol group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- -1 hexafluoroisopropyl group Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001112174A JP4418605B2 (ja) | 2001-04-11 | 2001-04-11 | パターン形成材料及びパターン形成方法 |
| US10/034,366 US6753132B2 (en) | 2001-04-11 | 2002-01-03 | Pattern formation material and pattern formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001112174A JP4418605B2 (ja) | 2001-04-11 | 2001-04-11 | パターン形成材料及びパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002311588A JP2002311588A (ja) | 2002-10-23 |
| JP2002311588A5 true JP2002311588A5 (enExample) | 2008-02-28 |
| JP4418605B2 JP4418605B2 (ja) | 2010-02-17 |
Family
ID=18963633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001112174A Expired - Fee Related JP4418605B2 (ja) | 2001-04-11 | 2001-04-11 | パターン形成材料及びパターン形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6753132B2 (enExample) |
| JP (1) | JP4418605B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3891257B2 (ja) * | 2001-06-25 | 2007-03-14 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| TW584786B (en) * | 2001-06-25 | 2004-04-21 | Shinetsu Chemical Co | Polymers, resist compositions and patterning process |
| KR100863984B1 (ko) * | 2001-07-03 | 2008-10-16 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
| JP4164643B2 (ja) * | 2002-07-17 | 2008-10-15 | 日本ゼオン株式会社 | ドライエッチング方法及びパーフルオロ−2−ペンチンの製造方法 |
| JPWO2009011364A1 (ja) * | 2007-07-18 | 2010-09-24 | 旭硝子株式会社 | 電子線、x線またはeuv光を用いたリソグラフィー法に用いられるレジスト組成物 |
| JP5039493B2 (ja) * | 2007-09-28 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
| JP7445467B2 (ja) * | 2019-03-15 | 2024-03-07 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
| JP7459636B2 (ja) * | 2019-06-14 | 2024-04-02 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
| US20210318613A9 (en) * | 2019-06-14 | 2021-10-14 | Jsr Corporation | Radiation-sensitive resin composition and resist pattern-forming method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6610456B2 (en) * | 2001-02-26 | 2003-08-26 | International Business Machines Corporation | Fluorine-containing styrene acrylate copolymers and use thereof in lithographic photoresist compositions |
-
2001
- 2001-04-11 JP JP2001112174A patent/JP4418605B2/ja not_active Expired - Fee Related
-
2002
- 2002-01-03 US US10/034,366 patent/US6753132B2/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100537381B1 (ko) | 광산 발생제를 포함하는 반사 방지 조성물, 당해 조성물과 감광성 내식막이 피복된 기판 및 감광성 내식막 릴리프 화상의 형성방법 | |
| JP3263010B2 (ja) | 新規なコポリマーとコポリマー樹脂バインダー成分からなるフォトレジスト組成物 | |
| KR910005884B1 (ko) | 패턴형성용 레지스트물질 및 레지스트 패턴의 형성방법 | |
| EP1210651B1 (en) | Antireflective coating for photoresist compositions | |
| JP2594124B2 (ja) | ポリフェノール及び選択されたエポキシ又はビニルエーテル化合物を基礎とするネガホトレジスト | |
| JP2000029215A (ja) | 新規なポリマー及びフォトレジスト組成物 | |
| TW200424779A (en) | Multilayer photoresist systems | |
| JP2000204115A (ja) | 有機反射防止膜塗布重合体およびその準備方法 | |
| JP3228193B2 (ja) | ネガ型フォトレジスト組成物及びそれを用いたパターン形成方法 | |
| JPH08253534A (ja) | 橋かけポリマー | |
| KR100520670B1 (ko) | 포토레지스트 패턴의 형성방법 | |
| JPH0769611B2 (ja) | 感光性樹脂用下地材料 | |
| TWI226515B (en) | Photoresist compositions and use of same | |
| KR100574482B1 (ko) | 유기 난반사 방지막용 조성물과 이의 제조방법 | |
| JP2002311588A5 (enExample) | ||
| JP5520440B2 (ja) | 有機反射防止膜形成用単量体、重合体及びこれを含む有機組成物 | |
| TW591335B (en) | Negative-acting aqueous photoresist composition | |
| TW411405B (en) | Novel polymers and photoresist compositions, and method for forming positive photoresist relief image | |
| JP3024621B2 (ja) | レジスト材料用酸発生剤 | |
| TW200400235A (en) | Organic anti-reflective coating composition and method for forming photoresist patterns using the same | |
| CA2020378A1 (en) | Maleimide containing, negative working deep uv photoresist | |
| JP2847414B2 (ja) | レジスト材料 | |
| JP2847413B2 (ja) | レジスト材料 | |
| KR100240823B1 (ko) | 포토레지스트 조성물 | |
| JP2747735B2 (ja) | レジスト材料 |