JP2002305146A - 薄膜半導体装置の製造方法および製造装置 - Google Patents

薄膜半導体装置の製造方法および製造装置

Info

Publication number
JP2002305146A
JP2002305146A JP2001108057A JP2001108057A JP2002305146A JP 2002305146 A JP2002305146 A JP 2002305146A JP 2001108057 A JP2001108057 A JP 2001108057A JP 2001108057 A JP2001108057 A JP 2001108057A JP 2002305146 A JP2002305146 A JP 2002305146A
Authority
JP
Japan
Prior art keywords
light
semiconductor film
film
laser
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001108057A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002305146A5 (enExample
Inventor
Yasushi Hiroshima
安 広島
Tetsuya Ogawa
哲也 小川
Hidetada Tokioka
秀忠 時岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Mitsubishi Electric Corp
Original Assignee
Seiko Epson Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Mitsubishi Electric Corp filed Critical Seiko Epson Corp
Priority to JP2001108057A priority Critical patent/JP2002305146A/ja
Publication of JP2002305146A publication Critical patent/JP2002305146A/ja
Publication of JP2002305146A5 publication Critical patent/JP2002305146A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001108057A 2001-04-06 2001-04-06 薄膜半導体装置の製造方法および製造装置 Withdrawn JP2002305146A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001108057A JP2002305146A (ja) 2001-04-06 2001-04-06 薄膜半導体装置の製造方法および製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001108057A JP2002305146A (ja) 2001-04-06 2001-04-06 薄膜半導体装置の製造方法および製造装置

Publications (2)

Publication Number Publication Date
JP2002305146A true JP2002305146A (ja) 2002-10-18
JP2002305146A5 JP2002305146A5 (enExample) 2005-03-17

Family

ID=18960267

Family Applications (1)

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JP2001108057A Withdrawn JP2002305146A (ja) 2001-04-06 2001-04-06 薄膜半導体装置の製造方法および製造装置

Country Status (1)

Country Link
JP (1) JP2002305146A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277062A (ja) * 2004-03-24 2005-10-06 Hitachi Ltd 半導体薄膜の製造方法
JP2006019408A (ja) * 2004-06-30 2006-01-19 Au Optronics Corp レーザー結晶シリコンの検査方法及びその装置
JP2007123419A (ja) * 2005-10-26 2007-05-17 Sharp Corp 半導体デバイスの製造方法および製造装置
US8346497B2 (en) 2003-03-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for testing semiconductor film, semiconductor device and manufacturing method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0397219A (ja) * 1989-09-11 1991-04-23 Hitachi Ltd 半導体装置の製造方法及び装置
JPH05234999A (ja) * 1992-02-26 1993-09-10 Hitachi Ltd 半導体装置の配線修正方法及びその装置
JPH10144621A (ja) * 1996-09-10 1998-05-29 Toshiba Corp 多結晶シリコンの製造方法、半導体装置の製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JPH11121378A (ja) * 1997-10-14 1999-04-30 Toshiba Corp 多結晶半導体膜の製造方法、半導体装置の製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JP2000133614A (ja) * 1998-10-28 2000-05-12 Toshiba Corp 薄膜の結晶化方法およびその装置
JP2000260731A (ja) * 1999-03-10 2000-09-22 Mitsubishi Electric Corp レーザ熱処理方法、レーザ熱処理装置および半導体デバイス
JP2000269133A (ja) * 1999-03-16 2000-09-29 Seiko Epson Corp 薄膜半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0397219A (ja) * 1989-09-11 1991-04-23 Hitachi Ltd 半導体装置の製造方法及び装置
JPH05234999A (ja) * 1992-02-26 1993-09-10 Hitachi Ltd 半導体装置の配線修正方法及びその装置
JPH10144621A (ja) * 1996-09-10 1998-05-29 Toshiba Corp 多結晶シリコンの製造方法、半導体装置の製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JPH11121378A (ja) * 1997-10-14 1999-04-30 Toshiba Corp 多結晶半導体膜の製造方法、半導体装置の製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JP2000133614A (ja) * 1998-10-28 2000-05-12 Toshiba Corp 薄膜の結晶化方法およびその装置
JP2000260731A (ja) * 1999-03-10 2000-09-22 Mitsubishi Electric Corp レーザ熱処理方法、レーザ熱処理装置および半導体デバイス
JP2000269133A (ja) * 1999-03-16 2000-09-29 Seiko Epson Corp 薄膜半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8346497B2 (en) 2003-03-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for testing semiconductor film, semiconductor device and manufacturing method thereof
JP2005277062A (ja) * 2004-03-24 2005-10-06 Hitachi Ltd 半導体薄膜の製造方法
JP2006019408A (ja) * 2004-06-30 2006-01-19 Au Optronics Corp レーザー結晶シリコンの検査方法及びその装置
JP2007123419A (ja) * 2005-10-26 2007-05-17 Sharp Corp 半導体デバイスの製造方法および製造装置

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