JP2002299324A - プラズマ処理方法及び装置 - Google Patents

プラズマ処理方法及び装置

Info

Publication number
JP2002299324A
JP2002299324A JP2001105442A JP2001105442A JP2002299324A JP 2002299324 A JP2002299324 A JP 2002299324A JP 2001105442 A JP2001105442 A JP 2001105442A JP 2001105442 A JP2001105442 A JP 2001105442A JP 2002299324 A JP2002299324 A JP 2002299324A
Authority
JP
Japan
Prior art keywords
substrate
vacuum vessel
antenna
plasma processing
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001105442A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002299324A5 (enExample
Inventor
Tomohiro Okumura
智洋 奥村
Yukihiro Maekawa
幸弘 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001105442A priority Critical patent/JP2002299324A/ja
Priority to US09/968,810 priority patent/US20020038791A1/en
Priority to US10/207,183 priority patent/US6830653B2/en
Publication of JP2002299324A publication Critical patent/JP2002299324A/ja
Priority to US10/983,670 priority patent/US7406925B2/en
Publication of JP2002299324A5 publication Critical patent/JP2002299324A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP2001105442A 2000-10-03 2001-04-04 プラズマ処理方法及び装置 Pending JP2002299324A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001105442A JP2002299324A (ja) 2001-04-04 2001-04-04 プラズマ処理方法及び装置
US09/968,810 US20020038791A1 (en) 2000-10-03 2001-10-03 Plasma processing method and apparatus
US10/207,183 US6830653B2 (en) 2000-10-03 2002-07-30 Plasma processing method and apparatus
US10/983,670 US7406925B2 (en) 2000-10-03 2004-11-09 Plasma processing method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001105442A JP2002299324A (ja) 2001-04-04 2001-04-04 プラズマ処理方法及び装置

Publications (2)

Publication Number Publication Date
JP2002299324A true JP2002299324A (ja) 2002-10-11
JP2002299324A5 JP2002299324A5 (enExample) 2005-09-02

Family

ID=18958137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001105442A Pending JP2002299324A (ja) 2000-10-03 2001-04-04 プラズマ処理方法及び装置

Country Status (1)

Country Link
JP (1) JP2002299324A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017017180A (ja) * 2015-07-01 2017-01-19 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017017180A (ja) * 2015-07-01 2017-01-19 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造

Similar Documents

Publication Publication Date Title
KR101124938B1 (ko) 플라즈마 처리 장치
JP6423706B2 (ja) プラズマ処理装置
KR100394484B1 (ko) 플라즈마 처리 방법 및 장치
KR101058310B1 (ko) 플라즈마 처리 장치
US9960014B2 (en) Plasma etching method
JP7140610B2 (ja) プラズマ処理装置
US20020038791A1 (en) Plasma processing method and apparatus
US20060236932A1 (en) Plasma processing apparatus
CN108091535B (zh) 载置台和等离子体处理装置
JP2001257199A (ja) プラズマ処理方法及び装置
CN1501452A (zh) 等离子加工装置
JP2001053060A (ja) プラズマ処理方法及び装置
JP2016506592A (ja) 均一なプラズマ密度を有する容量結合プラズマ装置
JP2009099858A (ja) プラズマ処理装置
CN113903649B (zh) 半导体工艺设备
JP2002050616A (ja) プラズマ処理方法及び装置
JP2002299324A (ja) プラズマ処理方法及び装置
JP4120561B2 (ja) プラズマ処理方法およびプラズマ処理装置
KR100553757B1 (ko) 유도결합형 플라즈마 처리장치
JP3814510B2 (ja) プラズマ処理方法及び装置
JP4120566B2 (ja) プラズマ処理方法及び装置
JP4347986B2 (ja) プラズマ処理装置
KR100755594B1 (ko) 용량 결합형 평행 평판 구조를 갖는 플라즈마 에칭 장치및 플라즈마 에칭 방법
JP4143362B2 (ja) プラズマ処理装置
TWI908017B (zh) 電漿限制系統、電漿處理裝置及蝕刻方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050225

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20050701

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050708

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061017

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061214

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070612