JP2002289719A - Package for storing semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To resolve problems where line conductors of an input-output terminal composing a semiconductor package cannot be baked with the ceramic based on aluminum oxide of dielectric material for the input-output terminal at the same time, fine ones containing Cu of low resistance cannot be formed with high density, and reflection loss of high frequency signal passing the input-output terminal is significant. SOLUTION: The input-output terminal 5 composing the semiconductor package 1 contains aluminum oxide of 84-90 wt.% and magnesium oxide of 2-6 wt.% as main components, and the line conductors contain copper of 10-70 vol.% and tungsten and/or molybdenum of 30-90 vol.%.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing various semiconductor devices operating at a high frequency used in fields such as optical communication, microwave communication and millimeter wave communication.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor element housing package (hereinafter referred to as a semiconductor package) for hermetically sealing and housing various semiconductor elements operating at a high frequency such as optical communication, microwave communication and millimeter wave communication, for example, FIG. 1 shows an optical semiconductor package used in the optical communication field.

As shown in FIG. 1, a semiconductor package 1 as an optical semiconductor package generally includes a metal such as an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or a copper (Cu) -tungsten (W) alloy. A semiconductor laser (LD) or a photodiode (P)
A substrate 4 having a mounting portion 3 on which a semiconductor element 2 such as an optical semiconductor element such as D) is mounted. The base 4 has a substantially rectangular plate shape, and a screw hole 11 for screwing to an external mounting board (not shown) is provided on the opposite side.

Further, the semiconductor device 2 is joined to the upper surface of the base 4 via a brazing material such as silver brazing so as to surround the mounting portion 3, and the semiconductor element 2 is disposed on both sides located on the long side of the base 4. A metal frame provided with a mounting portion 6 comprising a through hole or a cutout portion for fitting and joining an input / output terminal 5 for inputting / outputting a high-frequency signal for electrically connecting to an external electric circuit (not shown). Seven.

[0005] The metal frame 7 is made of an Fe-Ni-Co alloy or the like, and a cylindrical fixing member 18 for fixing the optical fiber 12 is fitted and joined to one side located on the short side of the base 4. Through holes 14 are formed.

Further, the input / output terminal 5 attached to the mounting portion 6
And a lid 15 hermetically sealing the semiconductor element 2 attached to the upper surface of the metal frame 7.

As shown in FIG. 2, the input / output terminal 5 includes a flat plate portion 9 made of a dielectric having a line conductor 8 formed from one side of the upper surface to the opposite side, and a flat plate portion 9.
And an upstanding wall portion 10 made of a similar dielectric and joined to the upper surface of the substrate with a line conductor 8 interposed therebetween.

On the side surface of the input / output terminal 5 substantially parallel to the line conductor 8, the line conductor 8 is quasi-coaxially surrounded and functions as a ground conductor, and the inner peripheral surface of the mounting portion 6 shown in FIG. A metal layer that functions as a joining medium to be joined via a brazing material such as brazing is formed.

On the upper surface of the line conductor 8, Fe--Ni--
A lead terminal 16 made of a metal material such as a Co alloy and joined by a brazing material such as silver brazing and having a function of making an electrical connection between the input / output terminal 5 and an external electric circuit is formed.

An outer peripheral portion of the through hole 14 which is an optical transmission path of the metal frame 7 shown in FIG. 1 is provided with an Fe—Ni—Co alloy or an Fe—Ni alloy having a thermal expansion coefficient close to that of the metal frame 7. A cylindrical fixing member 18 for fixing the optical fiber 12 made of a metal material such as an alloy is joined with a brazing material such as silver brazing.

The seal ring 17 is joined to the upper surface of the metal frame 7 and the upper surface of the input / output terminal 5 via a brazing material such as silver brazing, and holds the input / output terminal 5 and the cover 15 on the upper surface. It functions as a joining medium for joining by seam welding or the like.

Such a semiconductor package 1 has a base 4
The semiconductor element 2 is mounted and fixed on the mounting portion 3 with a low melting point brazing material such as tin (Sn) -lead (Pb) solder, and the electrodes of the semiconductor element 2 are inserted through bonding wires (not shown). It is electrically connected to the line conductor 8 of the output terminal 5, and further adjusts the optical axis of the optical fiber 12 and the semiconductor element 2. Thereafter, a metal holder 13 in which the optical fiber 12 is attached to an end surface of the fixing member 18 outside the metal frame 7 with an adhesive such as a resin is joined with a low melting point brazing material such as gold (Au) -tin (Sn). . Next, the lid 15 is joined to the upper surface of the metal frame 7 by seam welding or the like, and the semiconductor element 2 is hermetically accommodated in a container including the base 4, the metal frame 7, and the lid 15.
It becomes an optical semiconductor device as a product.

In such an optical semiconductor device, after being screwed onto a mounting substrate, the semiconductor element 2 is optically excited by a driving high-frequency signal supplied from an external electric circuit, and the excited light such as laser light is optically excited. By transmitting and receiving the data to and from the optical fiber 12, the optical fiber 12 functions as a photoelectric conversion device capable of transmitting a large amount of information at high speed, and is widely used in the field of optical communication and the like.

Therefore, the input / output terminal 5 used in the semiconductor package 1 used at a high frequency typified by the optical semiconductor device is used to transmit a high frequency input / output signal by reducing the reflection loss. In addition, high airtightness and low high-frequency loss are required in addition to miniaturization. Therefore, ceramics such as an aluminum oxide (Al ₂ O ₃ ) sintered body having a dielectric constant of about 8 to 10 are generally used as a dielectric constituting the input / output terminal 5. On the other hand, the line conductor 8 formed on the input / output terminal 5 has not only a low electric resistance, but also a tungsten (W) or molybdenum (Mo) or the like capable of forming a fine wiring pattern by co-firing with the ceramic. Refractory metals were employed.

However, in the line conductor 8 made of the refractory metal described above, if the size of the input / output terminal 5 is reduced, reflection loss of input / output signals at high frequencies can be prevented, but the line width of the line conductor 8 also becomes narrow. The electric resistance increases and transmission loss is caused. Therefore, Cu or Cu having lower resistance is used.
It has been proposed to form a wiring pattern by simultaneously sintering with the above ceramics by using a conductor containing Si and W or Mo (see JP-A-8-8502).

[0016]

However, in the above proposal, in order to densify aluminum oxide as a sintered body, it is necessary to fire at a high temperature of 1600 ° C. or more. At such a high temperature, when the above-mentioned Cu or a conductor containing Cu and W or Mo is simultaneously fired with the above-mentioned ceramics, the molten Cu component is separated due to the sintering of W or Mo, thereby causing blurring of the wiring pattern. There is a problem in that the resistance increases due to unevenness of the structure of the eight line conductors, for example, the volatilization of Cu occurs.

Further, since the dielectric constant of the dielectric material constituting the flat portion and the vertical wall portion of the input / output terminal 5 is as high as 8 to 10, the transmission loss of the high frequency signal passing through the input / output terminal 5 is 10 GHz.
There is a problem that it is extremely large at 0.6 dB / cm or more at z and 0.9 dB / cm at 20 GHz.

The Cu component constituting the line conductor 8 is
During the sintering at a high temperature, it diffuses into the aluminum oxide sintered body and the insulation between the line conductors 8 deteriorates.
There is also a problem that it is difficult to form fine line conductors 8 at a high density due to the miniaturization of itself.

Accordingly, the present invention has been completed in view of the above problems, and an object of the present invention is to provide a low-resistance and fine wiring which can be co-fired with a sintered body containing aluminum oxide as a main component and contains low-resistance Cu. It is an object of the present invention to provide a semiconductor package having a line conductor which can be used, and an input / output terminal made of a dielectric having a low dielectric constant.

[0020]

A semiconductor package according to the present invention has a base having a mounting portion on which a semiconductor element is mounted on an upper surface, and is mounted on the upper surface so as to surround the mounting portion. Frame formed with a notch or through-hole mounting portion for an input / output terminal, and a flat plate made of a dielectric having a plurality of line conductors formed from one side of the upper surface to the other side facing the same. And a vertical wall portion made of a dielectric joined to the upper surface of the flat portion with the plurality of line conductors interposed therebetween, and fitted to the mounting portion to electrically connect the semiconductor element and the external electric circuit. In the semiconductor device housing package having input / output terminals to be electrically connected, the input / output terminals contain 84 to 90% by weight of aluminum oxide and 2 to 6% by weight of manganese oxide as main components. 10-70 vol%, characterized in that it tungsten and / or molybdenum containing 30 to 90 vol%.

According to the present invention, the dielectric material constituting the flat plate portion and the vertical wall portion of the input / output terminal contains aluminum oxide at 84 to 90% by weight and manganese oxide at 2 to 6% by weight. It is densified as a sintered body at the following firing temperature. Therefore, a line conductor containing Cu and capable of low-resistance fine wiring can be formed by simultaneous firing. In addition, the dielectric constant of the dielectric constituting the flat portion and the vertical wall portion of the input / output terminal can be as low as about 4 to 6. Further, the transmission loss of the high-frequency signal passing through the input / output terminal of the present invention is 10G.
0.4 dB / cm or less at Hz and 0.7 dB at 20 GHz
/ Cm or less, the transmission characteristics of high-frequency signals are improved, fine wiring patterns can be formed at high density, and the input / output terminals can be further miniaturized.

Further, since the line conductor contains 10 to 70% by volume of Cu and 30 to 90% by volume of W and / or Mo, the sheet resistance is also 8 mΩ by low-resistance Cu.
/ □ (milliohm / □) or less.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor package of the present invention will be described in detail below. In the semiconductor package of the present invention, as shown in FIG. 2, the input / output terminals constituting the semiconductor package are formed of a substantially square dielectric plate.
A flat plate portion 9 having a line conductor 8 made of a metallized layer or the like formed on one surface from the other side to the opposite side, and a substantially rectangular parallelepiped wall made of a dielectric joined to the upper surface with the line conductor 8 interposed therebetween. And a unit 10.

The flat plate portion 9 is made of aluminum oxide (Al)
₂ O ₃ ) as a main component, made of a dielectric material composed of ceramics having a low dielectric constant of about 4 to 6 and being simultaneously sintered with the line conductor 8 containing Cu and maintaining the shape of the line conductor 8 It is also advantageous in achieving the property.

The ceramic containing aluminum oxide as a main component is formed of a highly dense body having a relative density of 95% or more, particularly 97% or more, and more preferably 99% or more, in order to have high thermal conductivity and high strength. Preferably.

Further, according to the present invention, in order to achieve shape retention during simultaneous firing with the line conductors 8, 1200 to 1500
It is preferable that firing can be carried out at a low temperature of ℃ and the relative density is 95% or more.

Therefore, the dielectric material of the input / output terminal 5 according to the present invention contains aluminum oxide as a main component at a ratio of 84 to 90% by weight, and the firing temperature (1200 to 150%).
(0 ° C.), it is necessary to contain a manganese (Mn) compound at a ratio of 2 to 6% by weight in terms of MnO _{2 in} order to enhance sinterability at 0 ° C.). That is, if the amount of the Mn compound is less than 2% by weight, it is difficult to densify at a firing temperature of 1200 to 1500 ° C, and if it is more than 6% by weight, the insulation resistance of the sintered body becomes less than 1 × 10 ⁸ Ω. , Is not suitable as a dielectric for the input / output terminal 5. In particular, the content is preferably 3 to 5% by weight from the viewpoint of the dielectric properties and the simultaneous sinterability of the line conductor 8.

In this dielectric, a third component is used.
Silicon oxide (SiO_Two) And magnesium (Mg),
Alkali such as calcium (Ca) and strontium (Sr)
When one or more kinds of potassium earth elements are contained as oxides,
The simultaneous sinterability of the line conductor 8, which is a Cu-containing conductor, is improved.
It is preferable in terms of performance. The content of silicon oxide (Si
O _Two) Is 2 to 15% by weight, and 3 to 1
0% by weight is more preferred. Also, alkaline earth elements
Is preferably 0.1 to 4% by weight in total in terms of oxide.
From the viewpoint of simultaneous sintering, 0.2 to 2.5% by weight is preferable.

Further, as a fourth component, a metal such as W, Mo, chromium (Cr) or the like may be contained as a coloring component in a proportion of 2% by weight or less.

In the present invention, the components other than aluminum oxide are present as an amorphous phase or a crystal phase at the grain boundaries of the main crystal phase of aluminum oxide, but an auxiliary component is added to the grain boundaries to enhance the thermal conductivity. It is preferable that a contained crystal phase is formed.

The aluminum oxide main crystal phase exists as granular or columnar crystals, and the average crystal grain size of these main crystal phases is preferably 1.5 to 5 μm.
When the main crystal phase is composed of columnar crystals, the average crystal grain size is based on the minor axis diameter. When the average crystal grain size of the main crystal phase is less than 1.5 μm, it is difficult to increase the thermal conductivity, and when the average grain size exceeds 5 μm, it is difficult to obtain the strength required for the input / output terminal 5. Therefore, the above range is preferable.

The line conductor 8 formed on the input / output terminal 5 is made of a conductor whose main component is a composite material of Cu, W and / or Mo, and is formed by co-firing with the dielectric. It is.

Further, on the surface of the line conductor 8, gold (Au), C is used to prevent corrosion due to oxidation, wire bonding property, wettability with solder, and lower the resistance of the line conductor 8.
It is preferable that at least one metal layer selected from the group consisting of u, titanium (Ti), nickel (Ni) and palladium (Pd) is applied by means of electroless plating, electrolytic plating or the like. In particular, the outermost surface is more preferably made of Au from the viewpoint of improving corrosion resistance and reducing resistance.

The line conductor 8 of the present invention has a Cu content of 10 to 70%.
%, W and / or Mo in a proportion of 30 to 90% by volume. That is, in order to reduce the resistance of the line conductor 8, maintain co-sintering with the dielectric, and maintain shape retention of the line conductor 8, Cu is 40 to 60% by volume, and W and / or Mo is 40 to 60%. % By volume. In this case, the sheet resistance can be reduced to 8 mΩ / □ or less,
More preferred.

This is because the amount of Cu in the line conductor 8 is 10
If it is less than volume% and the amount of W and / or Mo exceeds 90 volume%, the resistance of the line conductor 8 increases. Also, C
u amount exceeds 70% by volume, and W and / or Mo amount is 3%.
When the volume is less than 0% by volume, the shape retention of the line conductor 8 decreases,
The line conductor 8 is bleeding or the like, and the line conductor 8 is aggregated by the molten Cu to cause disconnection, and the line conductor 8 is separated due to a difference in thermal expansion between the dielectric and the line conductor 8.

On the other hand, the line conductor 8 is formed of W and / or M
o is a matrix (base material) made of Cu as sintered particles of spherical or several particles having an average particle diameter of 1 to 10 μm.
It is preferable that they are dispersed and contained therein. If the average particle size is smaller than 1 μm, the shape retention of the line conductor 8 is likely to be deteriorated, the structure becomes porous, and the resistance value is increased.
On the other hand, when the thickness exceeds 10 μm, the matrix made of Cu is divided by the particles of W or Mo, which may increase the resistance value or cause bleeding due to separation of the Cu component. More preferably, the average particle size of W and / or Mo is 1.3-5 μm, particularly preferably 1.3-3.
μm is good.

Further, in order to improve the adhesion to the dielectric, a ceramic component mainly composed of a ceramic constituting the dielectric or a ceramic component having the same composition as that of the dielectric is contained in the line conductor 8. It is preferable to contain at a rate of 0.05 to 2% by volume.

In the input / output terminal 5 of the present invention,
When co-firing with the dielectric at a temperature exceeding the melting point of Cu, the Cu component in the line conductor 8 may diffuse into the dielectric, but the diffusion distance of Cu to the dielectric around the line conductor 8 is 3
The thickness is preferably 0 μm or less, particularly preferably 10 μm or less. The diffusion distance can be controlled by selecting firing conditions and the like.

When the diffusion distance of the Cu component in the line conductor 8 into the dielectric exceeds 20 μm, the insulation between the line conductors 8 decreases, and the reliability as the line conductor 8 decreases. Therefore, by controlling the diffusion distance to 20 μm or less, the minimum line-to-line distance between the line conductors 8 can be set to 100 μm or less, particularly 90 μm or less, and high-density wiring of the line conductors 8 can be realized.

The input / output terminals 5 constituting the semiconductor package 1 of the present invention have the same metal layer as that of the line conductor 8 formed on the entire lower surface thereof, and the same applies to the side surfaces of the line conductor 8 which are substantially parallel to the line direction. Is formed.

For such a line conductor 8 and a metal layer, a metal paste obtained by adding an organic solvent and a solvent to a metal powder such as W or Mo is mixed with a known screen on a ceramic green sheet for the flat plate portion 9. It is formed by printing and applying a predetermined pattern by a printing method or the like, followed by baking.

The standing wall portion 10 is made of the same dielectric material as the flat plate portion 9, a metal layer similar to the line conductor 8 is formed on the entire upper surface thereof, and is joined to the inner peripheral surface of the mounting portion 6. A metal layer is also formed on the surface. This metal layer is formed by printing and applying a metal paste in a predetermined pattern in the same manner as for the line conductor 8 and the like, followed by firing.

Further, a portion where the line conductor 8 of the input / output terminal 5 is led out of the metal frame 7 is provided with a Fe for inputting / outputting a high-frequency signal between the external electric circuit and the input / output terminal 5.
-Lead terminal 16 made of a metal material such as a Ni-Co alloy
Are joined with a brazing material such as a silver brazing material.

The input / output terminal 5 obtained in this way is
A metal material 7 such as a Ni-Co alloy or a Cu-W alloy is fitted and joined to a mounting portion 6 formed on a side of a metal frame 7 joined to a base 4 made of a metal material such as a Cu-W alloy using a brazing material such as silver brazing. The semiconductor package 1 serves as a conductive path that forms a part of the frame 7 and hermetically separates the inside and outside from each other and conducts the inside and outside of the metal frame 7.
Is configured.

Next, an example of a method for manufacturing the input / output terminals 5 constituting the semiconductor package 1 of the present invention will be specifically described.

[1] First, as an Al ₂ O ₃ raw material powder which is a main component of the dielectric material constituting the flat plate portion 9 and the vertical wall portion 10 of the input / output terminal 5, the average particle size is 0.5 to 2.5 μm. Preferably, a powder of 0.5 to 2 μm is used. This is because when the average particle size is less than 0.5 μm, such fine powder is difficult to handle, and the cost of the powder is high. When the average particle size is more than 2.5 μm, it is difficult to fire at a low temperature of 1500 ° C. or less. That's why.

[2] Next, MnO ₂ is added as a _second component to the Al ₂ O ₃ raw material powder at a ratio of ₂ to 15% by weight, preferably 3 to 10% by weight. Further, as a third component, one or more of SiO ₂ and one or more alkaline earth elements such as MgO, CaO, and SrO are used in an amount of 0.1 to 4 in terms of oxide.
%, More preferably 0.2 to 2.5% by weight. Further, as a fourth component, a metal powder of a transition metal such as W, Mo, Cr or the like or an oxide powder thereof is added as a coloring component at a ratio of 2% by weight or less in terms of metal.

When the above oxides are added, they may be added with carbonates, nitrates, acetates or the like which can form oxides by firing other than oxide powder.

[3] Thereafter, a sheet-like molded body is formed from the mixed powder by a known molding method. In particular,
An organic binder or a solvent is added to the mixed powder to prepare a slurry, and then the slurry is formed into a sheet by a doctor blade method, or an organic binder is added to the mixed powder and a press molding method is performed. A sheet-like molded body having a predetermined thickness is produced by a rolling molding method.

[4] 10 to 70% by volume of Cu powder having an average particle size of 1 to 10 μm and 30% of W and / or Mo powder having an average particle size of 1 to 10 μm
A conductor paste containing at a rate of about 90% by volume is applied. For example, a wiring pattern is printed and applied on the surface of the sheet-shaped molded body for the flat plate portion 9 by a method such as a screen printing method or a gravure printing method so as to become the line conductor 8. Also, in the conductive paste, a flat plate portion 9 is provided.
Al ₂ O ₃ powder or
It is also possible to add a ceramic powder having the same composition as the oxide ceramic component constituting the dielectric at a ratio of 0.05 to 2% by volume.

[5] Then, the sheet-like molded body is punched into the shape of the flat plate portion 9 and the standing wall portion 10, and the standing wall portion 10 is laminated and pressed at a predetermined position of the flat plate portion 9, and then the laminated body is formed. In a non-oxidizing atmosphere, the maximum firing temperature is 1
It is fired and integrated under the condition of a temperature of 200 to 1500 ° C. At this time, if the firing temperature is lower than 1200 ° C., when using ordinary raw material powder, the aluminum oxide sintered body cannot be densified to have a relative density of 95% or more, and the thermal conductivity and strength are reduced. I do. When the temperature exceeds 1500 ° C., sintering of W and Mo itself in the conductor paste proceeds, and a conductor layer having a uniform structure in which W and Mo are uniformly present in Cu as a matrix cannot be obtained, and a low resistance value is maintained. Can not do
It becomes difficult to reduce the sheet resistance to 8 mΩ / □ or less.

If the temperature exceeds 1500 ° C., the grain size of the main crystal phase of the oxide ceramics increases, abnormal grain growth occurs, and the length of the grain boundary, which is a path when Cu diffuses into the ceramics, is increased. And the diffusion rate increases. As a result, it becomes difficult to suppress the diffusion distance to 30 μm or less, and the resistance value increases. Therefore, the firing temperature is more preferably in the range of 1250 to 1400 ° C.

Further, as the non-oxidizing atmosphere at the time of firing,
The atmosphere is preferably nitrogen or a mixed atmosphere of nitrogen and hydrogen. In particular, from the viewpoint of suppressing the diffusion of Cu in the line conductor 8, it is preferable that the non-oxidizing atmosphere contains nitrogen and hydrogen and has a dew point of 10 ° C. or less, particularly −10 ° C. or less. Further, an inert gas such as an argon gas may be mixed in the non-oxidizing atmosphere. That is, if the dew point of the non-oxidizing atmosphere is higher than 10 ° C., the oxide ceramic reacts with moisture in the atmosphere during firing to form an oxide film, and the oxide film reacts with Cu in the conductor. This is because not only does this hinder lowering of the resistance of the line conductor 8 but also promotes the diffusion of Cu.

[6] Thereafter, the line conductors 8 of the input / output terminals 5 which have been co-fired are plated with Au, Cu, T by electroless plating or electrolytic plating as described in detail above.
At least one metal layer selected from the group consisting of i, Ni and Pd is applied in a thickness of 0.5 to 10 μm.

A lead terminal made of a metal material such as an Fe-Ni-Co alloy or Cu-W for inputting / outputting a high-frequency signal between the external electric circuit and the input / output terminal 5 with respect to the line conductor 8. 16 are joined with a brazing material such as silver brazing.

By baking the above composition under the baking conditions described in detail, a 10 GHz
Transmission loss at 0.4 GHz / cm, 20 GHz
At 0.7 dB / cm or less.

It should be noted that the present invention is not limited to the above-described embodiment, and that various changes may be made without departing from the scope of the present invention.

[0058]

According to the present invention, there is provided a semiconductor package mainly comprising a base, a metal frame, and input / output terminals.
Input / output terminals are 84-9 as aluminum oxide as the main component
0% by weight and 2-6% by weight of manganese oxide, and the line conductor contains 10-70% by volume of copper, tungsten and / or
Alternatively, since the molybdenum is contained in an amount of 30 to 90% by volume, a line conductor containing low-resistance Cu is formed in a fine pattern and at a high density by simultaneous firing on a dielectric made of a highly thermally conductive aluminum oxide sintered body. Can be formed,
I / O terminals can be made more compact. Furthermore, reflection loss of a high-frequency signal passing through the input / output terminal can be effectively prevented, and a semiconductor package with improved high-frequency signal transmission characteristics can be realized.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view showing an example of an embodiment of a semiconductor package of the present invention.

FIG. 2 is a perspective view of an input / output terminal in the semiconductor package of the present invention.

[Explanation of symbols]

 1: semiconductor package 2: semiconductor element 3: mounting portion 4: base 5: input / output terminal 6: mounting portion 7: metal frame 8: line conductor 9: flat plate portion 10: standing wall portion

Claims (1)

[Claims] 1. A base having a mounting portion on which a semiconductor element is mounted on an upper surface, and a mounting portion attached to the upper surface so as to surround the mounting portion and having a cutout portion or a through hole on a side portion. A metal frame on which an attachment portion for an output terminal is formed, a flat plate portion made of a dielectric having a plurality of line conductors formed from one side of the upper surface to the other side opposite thereto, and the plurality of It has an input / output terminal formed of an upright wall portion made of a dielectric joined with a line conductor interposed therebetween and fitted to the mounting portion to electrically connect the semiconductor element and an external electric circuit. In the package for housing a semiconductor element, the input / output terminals contain 84 to 90% by weight of aluminum oxide and 2 to 6% by weight of manganese oxide as main components, and the line conductors contain 10 to 70% by volume of copper, tungsten and / or tungsten. Ma Or 30 to 90% by volume of molybdenum
A package for accommodating a semiconductor element, characterized by being contained.