JP2002280478A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, and its manufacturing method, in which fine wiring can be formed, the entire device is made flat even after flip-chip connection of a semiconductor element, and an external connection terminal can be formed easily. SOLUTION: A metal plate is arranged on the periphery of columnar metal electrode terminals arrange at specified positions to penetrate an insulating resin layer, a multilayer wiring layer is formed on the insulating resin layer and a semiconductor element is mounted on the uppermost layer of the wiring layer through flip-chip connection.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device having a semiconductor element mounted on a multilayer wiring board having an external connection terminal layer.

[0002]

2. Description of the Related Art In recent years, with the demand for higher functionality and lighter, thinner and smaller electronic devices, high-density integration and high-density mounting of electronic components have been progressing. Semiconductor packages have become smaller and have more pins than ever before.

As a method of electrically connecting these miniaturized packages, there is known a method of making electrical connection using a connection member in which conductor terminal electrodes arranged in an insulating resin layer are embedded. As such an electrical connection member, Japanese Patent Application Laid-Open No. 63-86322 proposes a conductive anisotropic adhesive sheet in which columnar conductors are embedded in a predetermined arrangement. Since the electrodes are embedded in the insulating layer in advance, the target electrodes can be accurately connected to each other.

[0004] Japanese Patent Application Laid-Open No. 2-49385 discloses that
Spin-coat photosensitive polyimide on a metal sheet,
After forming through-holes by photo-etching, electrolytic gold plating is performed to form a conductive member, and finally, the metal sheet is etched and removed, so that the conductive member is embedded in the polyimide resin layer. A method for obtaining a connecting member has been proposed. When the anisotropic conductive connecting member thus obtained is used, since the fine conductive member is formed by photoetching, the target electrodes can be accurately connected to each other. Further, since the photosensitive polyimide serving as the insulating layer is formed in advance, there is no need to remove the resin applied to the tip of the conductive member later. Furthermore, by forming the conductive members at a finer pitch than the pitch of the electrodes to be connected, the connection can be performed without relative positioning between the electrodes to be connected and the anisotropic conductive connection members.

However, in these semiconductor devices, circuits are also arranged around the semiconductor element mounting portion for high density, so that the entire semiconductor device becomes large, and sufficient strength cannot be maintained, and flatness is reduced. It has become difficult to keep. Therefore, measures have been taken to reduce warpage by attaching a reinforcing plate to a portion where the semiconductor element is not mounted. A metal plate such as a copper plate or an alloy is used for the reinforcing plate, and is usually bonded using a thermocompression bonding type adhesive or a room temperature bonding type adhesive. However, when a thermocompression bonding agent is used, the substrate is warped because it is heated to a high temperature during bonding. Further, since the room-temperature adhesive is not good in heat resistance, there is a problem that the reinforcing plate is peeled off at the time of solder reflow when the semiconductor device is mounted on the substrate.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems in a semiconductor device, and allows fine wiring to be formed. By arranging a metal plate around an external connection terminal, the entire device can be manufactured. It is an object to provide a semiconductor device which is flat and can be easily connected to the outside.

[0007]

That is, according to the present invention, a semiconductor element is mounted on a multilayer wiring board having external connection terminals, and the external connection terminals pass through the front and back of the insulating resin layer. A semiconductor device comprising a columnar metal electrode terminal arranged at a predetermined position, wherein a metal plate is embedded in the insulating resin layer around the external connection terminal.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In a semiconductor device according to the present invention, a metal plate is arranged around columnar metal electrode terminals aligned at predetermined positions so as to penetrate the front and back of an insulating resin layer. A wiring layer composed of a plurality of layers, and a semiconductor element is mounted on the uppermost layer of the wiring layer.

In the present invention, first, a columnar metal electrode terminal aligned at a predetermined position so as to penetrate the front and back of the insulating resin layer and a method of disposing a metal plate around the metal electrode terminal in the insulating resin layer are as follows. A method can be used in which a protective film is formed on one surface of a metal plate, a metal electrode terminal and a peripheral metal plate are simultaneously formed from the other surface by etching, and an insulating resin film is laminated and pressed thereon. Also, using a metal plate on one side of which a copper foil is adhered via an insulating resin, a hole larger than the metal electrode is formed in advance at a position corresponding to the metal electrode terminal of the metal plate. And filling the inside of the hole with resin by forming an insulating resin layer on this metal plate, and then forming a hole of the size of a metal electrode terminal inside the hole filled with resin, and forming a copper foil. Can be used as an electrode by filling the inside of the hole with metal by electroplating to obtain an electrode terminal.

The insulating resin layer can be formed by thermocompression bonding of the insulating resin film using a roll laminator or a vacuum laminator.
A liquid insulating resin can be formed by a method of casting and coating on a metal plate, followed by drying.

As a method of forming a hole having the size of a metal electrode terminal, a physical method such as laser or plasma, or a chemical method using a chemical such as a strong alkali can be used. The method using a laser is preferable because fine holes can be formed with high accuracy. As the laser, a carbon dioxide laser, a UV laser, an excimer laser, or the like can be used.

Next, a wiring layer is formed on the insulating resin layer thus obtained, in which the metal electrode terminals having a metal plate on the periphery penetrate the front and back. The wiring layer is formed by laminating a circuit formed by etching a circuit on a copper-clad laminate, by directly plating one layer on the insulating resin layer, or by electroplating on a second metal plate. It can be obtained by a method in which an insulating film is laminated on the formed circuit, the second metal plate is removed after the insulating film is laminated on the insulating resin layer. In particular, in a method of laminating a circuit formed by electroplating on a second metal plate, a fine circuit can be easily formed, and after laminating an insulating film,
Since a bump-shaped metal electrode for interlayer connection can be formed by electroplating using the second metal plate as an electrode, multilayer wiring can be easily formed, which is suitable for the semiconductor device of the present invention.

As the insulating resin used for the external connection terminal layer of the semiconductor device of the present invention, either a thermoplastic resin or a thermosetting resin can be used. As the thermoplastic resin, polyamide, polyimide, polyamide imide, polyether imide, polyester imide, polyether ether ketone, polyphenylene sulfide, polyquinoline, polynorbornene, liquid crystal polymer and the like can be widely used. As the thermosetting resin, phenol resin, epoxy resin, bismaleimide, bismaleimide triazine, triazole, cyanate, polycyanurate, isocyanate, polyisocyanurate, benzocyclobutene, and modified products thereof can be used.

The metal plate used for the external connection terminal layer of the semiconductor device of the present invention includes copper, aluminum, iron, nickel,
Copper alloy, 42 alloy, stainless steel, etc. can be used. As the metal plate, a single plate processed into a frame shape may be used, or a hoop-shaped continuous plate may be used. In particular, when a hoop-shaped metal plate is used, it can be formed continuously and can be efficiently produced, which is preferable.

As a method of opening a hole larger than the outer shape of the metal terminal at a predetermined position on the metal plate, a method of chemically removing the metal terminal with an acid or an alkali or a method of using a laser can be suitably used. In the method of chemically removing by etching, a pattern may be formed on a metal plate with a resist.

Next, connection pads corresponding to the electrodes of the semiconductor element are formed on the uppermost wiring layer to obtain a semiconductor mounting substrate. Subsequently, the semiconductor device can be obtained by positioning the bumps of the semiconductor element with bumps on the connection pads and heat-pressing them, and further mounting the solder balls on the external connection terminals.

[0017]

EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the invention is limited thereto.

As a metal plate used for the external connection terminal layer,
150 micron thick copper plate 1 (EFTEC, manufactured by Furukawa Electric)
64T) (FIG. 1 (a)).

An etching resist was formed on the front and back surfaces of the copper plate 1, and 2,500 holes 2 each having a diameter of 350 μm and a pitch of 0.5 μm were formed in a square of 50 pieces on each side by etching from both the front and back surfaces (FIG. 1B). .

Next, a silicone-modified polyimide resin layer (ITA-10 manufactured by Sumitomo Bakelite) is formed on the 70 μm copper foil 4.
The resin-coated copper foil 3 on which 30) was formed by 50 μm was heat-pressed at 180 ° C. from one surface of the metal plate 1 with a vacuum laminator (FIG. 1C). Further, from the opposite surface of the metal plate, a solution varnish of the same silicone-modified polyimide N-methyl-2-pyrrolidone was cast and applied, and dried at 150 ° C. for 30 minutes, 200 ° C. for 10 minutes, and 230 ° C. for 5 minutes. Both sides of the plate and the inside of the holes were covered with silicone-modified polyimide resin (Fig. 1
(D)).

Then, using a UV-YAG laser, a 200 μm metal electrode hole 5 was formed concentrically with the 350 μm hole previously formed. Hole 5 is tapered,
The hole diameter was 200 μm on the laser irradiation side and 150 μm on the opposite side.
μm (FIG. 1 (e)).

Using a 70 μm copper foil 4 as an electrode, a layer of gold is formed to a thickness of 1 μm by electrolytic plating inside the hole 5, and then filled with copper to form a metal electrode 6, and a terminal layer for external connection is formed. 7 was obtained (FIG. 1 (f)).

A circuit board 20 with bumps was prepared as a circuit to be laminated on the external connection terminal layer 7. The circuit board 20 with bumps is formed by forming a fine circuit 22 on a second metal plate 21 by electrolytic plating, heating and compressing an insulating film 23 of silicone-modified polyimide on the circuit by a vacuum laminator, and then pressing the UV-YAG Holes for bumps were formed by laser, the insides of the holes were filled with copper again using the second metal plate 21 as an electrode, and solder plating 25 was applied to the tip of the obtained copper bump 24 (FIG. 1 (g)). )).

Next, the circuit board 20 with bumps was positioned on the external connection terminal layer 7 and superimposed, and then heat-pressed at 250 ° C. for 10 minutes at 200 N using a vacuum press (FIG. 2 (h)). )). After removing the second metal plate 21 by etching, heating and pressing another circuit board with bumps in the same manner were repeated. The connection pads 10 corresponding to the positions of the electrodes of the semiconductor element were formed on the uppermost circuit (FIG. 2 (i)). The 70 μm copper foil 4 formed on the opposite surface of the external connection terminal layer 7 is removed by etching, and a solder resist 8 (PSR-4 manufactured by Taiyo Ink) is formed on the surface after the removal.
000), and the external connection terminals 11 were exposed to obtain a semiconductor device substrate 12 (FIG. 2 (j)).

The bumps of the semiconductor element 13 with bumps were positioned on the connection pads 10 and pressed under heat. The semiconductor ball 30 is mounted by mounting the solder balls 14 on the external connection terminals 11.
Was obtained (FIG. 3).

[0026]

According to the semiconductor device of the present invention, the external connection terminals composed of metal electrode terminals arranged at predetermined positions are embedded so as to penetrate the front and back of the insulating resin layer. Since a metal plate is arranged around the semiconductor device, a flat semiconductor device can be obtained even after the semiconductor elements are flip-chip connected.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a process of manufacturing a semiconductor device substrate according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a manufacturing process of the semiconductor device substrate according to the embodiment of the present invention (continuation of FIG. 1).

FIG. 3 is a cross-sectional view illustrating a structural example of a semiconductor device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Metal plate 2 Hole 3 Copper foil with resin 4 Copper foil 5 Hole for metal electrode 6 Copper 7 External connection terminal layer 8 Solder resist 10 Connection pad 11 External connection terminal 12 Semiconductor device substrate 13 Semiconductor element with bump 14 Solder ball 20 Bumped circuit board 21 Second metal plate 22 Microcircuit 23 Insulating film 24 Copper bump 25 Solder plating 30 Semiconductor device

Claims (1)

[Claims] A semiconductor element is mounted on a multilayer wiring board having an external connection terminal layer, and the external connection terminal is
It is composed of pillar-shaped metal electrode terminals arranged in a predetermined position so as to penetrate the front and back of the insulating resin layer, and that a metal plate is embedded and arranged around the external connection terminal in the insulating resin layer. Characteristic semiconductor device.