JP2002252325A - Semiconductor device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem of failures, such as burnout due to a metal small-gauge wire for electrically connecting wiring formed on a wiring board to the electrode of a semiconductor device coming into contact with the end section of the semiconductor device, and short-circuiting between the metal small-gauge wires by the flow of the metal small-gauge wires due to the flow of resin in a sealing process occurring in the semiconductor device, where a plurality of semiconductor devices are laminated on a wiring board. SOLUTION: A first insulating material 11 for bonding the wiring board 12 to the first semiconductor device 10 projects to the side section of the first semiconductor device 10, and the metal small-gauge wire 15 for electrically connecting an electrode of the second semiconductor device 13 to wiring of the wiring board 12 is brought into contact with the projection in the first insulating material 11 for fixing, thus preventing the metal small-gauge wire 15 from coming into contact with the end section of the first semiconductor device 10 for disconnection, and preventing the metal small-gauge wires form being mutually short-circuited by the flow of a sealing resin in the sealing process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a plurality of semiconductor elements are stacked on a wiring board and a method of manufacturing the same. And a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as electronic devices such as computers and communication devices have become smaller and more sophisticated, semiconductor devices have also been required to be smaller, denser and faster. . Therefore, a high-density semiconductor device in which a plurality of semiconductor elements are stacked on a wiring board has been proposed.

Hereinafter, a conventional semiconductor device will be described with reference to the drawings.

FIG. 6 is a sectional view showing a conventional semiconductor device.

As shown in FIG. 6, the electrode forming surface of the first semiconductor element 1 is adhered to the wiring board 3 via the first insulating material 2 and formed on the electrode of the first semiconductor element 1. The bump and the wiring of the wiring board 3 are electrically connected. Further, the back surface of the first semiconductor element 1 and the back surface of the second semiconductor element 4 are bonded via a second insulating material 5 so that the electrode of the second semiconductor element 4 and the wiring of the wiring board 3 are connected. Metal wire 6
Are electrically connected by And the wiring board 3
Above, the first semiconductor element 1, the second semiconductor element 4, and the thin metal wires 6 are sealed with a sealing resin 7. In addition,
The wiring formed on the upper surface of the wiring board 3 and the external electrode on the rear surface are electrically connected through a through hole inside the wiring board 3, and a ball electrode 8 made of a material such as solder is formed on the external electrode. .

[0006]

However, in the conventional semiconductor device, the following problems occur in connection of the thin metal wires.

[0007] With the recent increase in the number of functions and the functions of electronic devices, the size of semiconductor elements has increased, and the ratio of the area of the semiconductor elements to the area of the wiring board has increased, and wiring has been formed on the wiring board. Is limited to the periphery of the wiring board, and is inevitably near the end of the first semiconductor element bonded to the wiring board.

There are many semiconductor devices in which the area of the first semiconductor element bonded to the wiring substrate is larger than the area of the second semiconductor element.

As described above, the area where the wiring is formed on the wiring board is near the end of the first semiconductor element and the second semiconductor element is bonded to the upper surface of the first semiconductor element bonded to the wiring substrate. When the first semiconductor element is larger than that of the first semiconductor element, the loop shape of the thin metal wire is made substantially horizontal from the electrode of the second semiconductor element to above the end of the first semiconductor element. The shape needs to be substantially vertical from above the end of the element to passing through the side of the first semiconductor element and descending to the wiring on the wiring board. Therefore, the thin metal wire forms a sharply curved curve above the end of the first semiconductor element.

As described above, rapid bending of a thin metal wire requires the development of an advanced loop forming technique of a wire bonding apparatus, and is a problem particularly in a wire bonding process at a mass production site where repeatability is required. .
Therefore, it is difficult to sharply bend a large number of fine metal wires all over the end of the first semiconductor element so as not to contact the end of the first semiconductor element. In such a case, a trouble such as disconnection is likely to occur due to contact with the part.

When the area of the first semiconductor element is larger than the area of the second semiconductor element, the length of the thin metal wire above the first semiconductor element becomes longer. The resistance of the thin metal wires increases due to the flow of the resin, and the thin metal wires come into contact with each other to cause a short circuit.

The present invention has been made to solve the above-mentioned conventional problems, and a thin metal wire is fixed by contacting an insulating resin used for bonding a wiring board or a semiconductor element.
An object of the present invention is to provide a semiconductor device for preventing a problem such as disconnection or short-circuit of a thin metal wire and a method for manufacturing the same.

[0013]

In order to solve the above-mentioned conventional problems, a semiconductor device according to the present invention is a semiconductor device in which a plurality of semiconductor elements are stacked and mounted on a wiring board,
The wiring formed on the wiring board and the electrode of the semiconductor element are electrically connected by a thin metal wire, and protrude from between the wiring board and the semiconductor element bonded on the wiring board to form the semiconductor element. The thin metal wire contacts and is fixed to the insulating material formed on the side part.

Thus, since the thin metal wire is fixed by the insulating material, it is possible to prevent problems such as disconnection and short circuit of the thin metal wire.

Further, the electrodes of the semiconductor element adhered on the wiring board and the wiring formed on the wiring board are electrically connected via bumps.

As a result, the thickness of the semiconductor device can be reduced, and the wiring length can be reduced.

Further, in the semiconductor element bonded on the wiring substrate, the back surface of the semiconductor element is bonded on the wiring substrate.

Thus, the electrode of the semiconductor element and the wiring of the wiring board can be electrically connected by the thin metal wire.

Also, the upper surface of the wiring board and the electrode forming surface of the first semiconductor element are bonded via a first insulating material,
Wiring formed on the upper surface of the wiring substrate and the electrode of the first semiconductor element are electrically connected via bumps, and the first semiconductor element has a smaller surface than the first semiconductor element on the back surface. A back surface of the second semiconductor element is adhered via a second insulating material, and an electrode of the second semiconductor element is electrically connected to a wiring of the wiring board by a thin metal wire;
The thin metal wire is fixed in contact with a portion of the second insulating material protruding from the back surface of the second semiconductor element.

Thus, the thin metal wire is in contact with and fixed to the insulating material, so that problems such as disconnection and short circuit of the thin metal wire can be prevented.

The shape and area of the second insulating material are the same as the shape and area of the back surface of the first semiconductor element, and the fine metal wire is fixed by contacting the end of the second insulating material. Have been.

[0022] With this, it is possible to prevent disconnection of the fine metal wire and flow of the fine metal wire due to the flowing sealing resin above the end of the semiconductor element adhered to the wiring board, and to form a stable loop of the fine metal wire. Become.

Also, the area of the second insulating material is larger than the area of the first semiconductor element, and the thin metal wire contacts the part of the second insulating material protruding from the end of the first semiconductor element. It is fixed.

Thus, the thin metal wire is brought into contact with the second insulating material which is larger than the second semiconductor element, so that the thin metal wire can be prevented from being broken and the thin metal wire can be prevented from flowing due to the flowing sealing resin. A loop of a thin line can be formed.

Further, in a semiconductor device in which a plurality of semiconductor elements are stacked and mounted on a wiring board, a wiring formed on the wiring board and an electrode of the semiconductor element are electrically connected by a thin metal wire. Connected, and the thin metal wire is fixed by passing through a third insulating material formed on the wiring.

Thus, even if the amount of the sealing resin protruding from between the wiring board and the semiconductor element is insufficient, the third insulating material does not allow the thin metal wire to contact the end of the semiconductor element. Can be bent around and electrically connected to the wiring portion of the wiring board and fixed.

The wiring formed on the wiring board is electrically connected to the wiring through a through hole inside the wiring board, and a ball electrode is formed on an external electrode formed on the back surface of the wiring board.

Thus, the wiring board can be mounted on the external motherboard and electrically connected.

A step of laminating and mounting a plurality of semiconductor elements on the upper surface of the wiring board, and a step of electrically connecting electrodes of the semiconductor elements to wirings formed on the upper surface of the wiring board with thin metal wires. In the step of electrically connecting the electrode of the semiconductor element and the wiring formed on the upper surface of the wiring substrate with a thin metal wire,
A first adhesive bonding the upper surface of the wiring substrate to the semiconductor element;
The thin metal wire is applied to a portion of the insulating material protruding from the side of the semiconductor element or to a portion of the second insulating material that protrudes from the bonding surface of the plurality of semiconductor elements to bond the plurality of semiconductor elements together. Contact and fix.

According to such a method of manufacturing a semiconductor device, a thin metal wire may be broken by contacting an edge of a semiconductor element.
Problems such as short-circuiting between thin metal wires due to the flow of the sealing resin can be prevented.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor device according to the present invention and a method for manufacturing the same will be described below with reference to the drawings.

First, a first embodiment of the present embodiment will be described.

First, a method for manufacturing the semiconductor device of the present embodiment will be described.

FIG. 1 and FIG. 2 are cross-sectional views showing respective manufacturing steps of the method of manufacturing a semiconductor device according to the present embodiment.

As shown in FIG. 1A, the first semiconductor element 10 on which the bumps 9 are formed is opposed to a wiring board 12 on which a sheet-like first insulating material 11 is provided. The wiring (not shown) 12 and the bumps 9 formed on the electrodes of the first semiconductor element 10 are aligned and electrically connected, and the first insulating element 11 is used for the first semiconductor element 10. And the upper surface of the wiring board 12 are bonded. At this time, the first insulating material 11 is sandwiched between the first semiconductor element 10 and the wiring board 12 and protrudes to the side of the first semiconductor element 10. In the present embodiment, the first insulating material 11 uses an epoxy-based thermosetting insulating material.

Here, as shown in FIG. 1B, the back surface of the second semiconductor element 13 is formed on the back surface of the first semiconductor element 10 by using a second insulating material 14 made of epoxy resin. Glue.

Next, as shown in FIG. 1C, the electrodes of the second semiconductor element 13 and the wiring formed on the wiring board 12 are electrically connected by the thin metal wires 15 in this embodiment. Is characterized in that the thin metal wire 15 is fixed in contact with the portion of the first insulating material 11 protruding from the side of the first semiconductor element 10.

Next, a method of forming a loop of the thin metal wire 15 will be described in detail.

First, one end of the thin metal wire 15 is joined to the electrode of the second semiconductor element 13, and then the first wire is connected by a capillary.
The thin metal wire 15 is guided substantially parallel to the upper surface of the semiconductor element 10. Then, the thin metal wire 15 is connected to the first semiconductor element 10.
Is bent down near the upper end of the wiring board, and the other end is
2 to the upper wiring. At this time, the thin metal wire 15 is fixed in contact with the upper portion of the first insulating material 11 protruding to the side of the first semiconductor element 10. Therefore, the disconnection of the thin metal wire 15 can be prevented.

Next, as shown in FIG. 2A, the first semiconductor element 10, the second semiconductor element 13 and the fine metal wires 15 on the upper surface of the wiring board 12 are sealed with an epoxy-based thermosetting sealing resin. 16 and sealing is performed.

Next, as shown in FIG. 2B, the ball electrode 1 made of solder or the like is
7 is mounted, and the solder is melted and cured through a reflow process. Note that the wiring on the front surface of the wiring board 12 and the external electrodes on the back surface of the wiring board 12 are electrically connected by through holes inside the wiring board 12.

As described above, in the method of manufacturing a semiconductor device according to the present embodiment, the thin metal wire for electrically connecting the electrode of the second semiconductor element and the wiring of the wiring board protrudes to the side of the first semiconductor element. By contacting and fixing the first resin,
The thin metal wire can be prevented from breaking due to contact with the end of the first semiconductor element, and a short circuit between the thin metal wires can be prevented because the thin metal wire does not flow due to the flow of the sealing resin in the sealing step. it can.

Further, since there is no need for an advanced technique for forming a loop of a thin metal wire, it is possible to prevent a reduction in yield in a wire bonding process at a mass production site.

The method of manufacturing a semiconductor device according to the present embodiment is a case in which two semiconductor elements are stacked. However, even when three or more semiconductor elements are stacked, a thin metal wire is By contacting and fixing the insulating material protruding from the space between them, it is possible to prevent problems such as disconnection and short-circuit of the thin metal wires.

Next, an embodiment of the semiconductor device of the present embodiment manufactured by the above-described method for manufacturing a semiconductor device will be described with reference to the drawings. The same components as those in the method of manufacturing a semiconductor device according to the present embodiment are denoted by the same reference numerals.

As shown in FIG. 2B, the upper surface of the wiring board 12 made of a glass epoxy insulating material and the electrode forming surface of the first semiconductor element 10 are bonded via the first insulating material 11. In addition, the wiring formed on the upper surface of the wiring board 12 and the bump 9 formed on the electrode of the first semiconductor element 10 are electrically connected. The first insulating material 11 protrudes from between the first semiconductor element 10 and the wiring board 12 and is also formed on the side of the first semiconductor element 10. Then, the back surface of the first semiconductor element 10 and the first semiconductor element 1
The lower surface of the second semiconductor element 13 smaller than 0 is adhered to the second semiconductor element 13 by the second insulating material 14.
The third electrode and the wiring of the wiring board 12 are electrically connected by the thin metal wire 15. This thin metal wire 15 is
And is fixed in contact with the first insulating material 11 protruding from the side of the semiconductor element 10. The first semiconductor element 10, the second semiconductor element 13, and the thin metal wires 15 are sealed on the upper surface of the wiring board 12 with an epoxy-based thermosetting sealing resin 16.

In the present embodiment, the wiring of the wiring board and the electrode of the first semiconductor element are electrically connected by bumps, but the back surface of the first semiconductor element is provided on the wiring board with the first insulation. The back surface of the second semiconductor element is bonded to the electrode forming surface of the first semiconductor element with the second insulating material, and the electrode of the first semiconductor element and the electrode of the second semiconductor element are bonded together. Similarly, even when the wiring of the wiring board is electrically connected by a thin metal wire and the thin metal wire is in contact with and fixed to the first insulating material protruding from between the wiring board and the first semiconductor element, Problems such as disconnection and short-circuit of the thin metal wire can be prevented.

As described above, in the semiconductor device of this embodiment, the first thin metal wire electrically connecting the electrode of the second semiconductor element and the wiring of the wiring board protrudes to the side of the first semiconductor element.
To prevent the thin metal wire from being broken by contacting the end of the semiconductor element, preventing the height variation of the thin metal wire, and sealing in the sealing step. It is possible to prevent the metal thin wires from flowing due to the flow of the resin and short-circuiting between the metal thin wires. Further, since a sophisticated technique for forming a loop of a fine metal wire is unnecessary, it is possible to prevent a decrease in yield in a wire bonding process at a mass production site.

Next, a second embodiment will be described with reference to the drawings. Note that the same components as those in the first embodiment are denoted by the same reference numerals, and common contents are omitted.

FIGS. 3 and 4 are sectional views showing the semiconductor device of the present embodiment.

As shown in FIG. 3, the upper surface of the wiring board 12 and the electrode forming surface of the first semiconductor element 10 are bonded via a first insulating material 11, and the electrodes of the first semiconductor element 10 are The formed bumps 9 and the wiring of the wiring board 12 are electrically connected. Further, the second semiconductor element 13 is provided on the upper surface of a second insulating material 14 made of a sheet-like epoxy-based insulating material provided on the back surface of the first semiconductor element 10.
Are bonded, and the electrodes of the second semiconductor element 13 and the wiring of the wiring board 12 are electrically connected by the thin metal wires 15. And, as a characteristic configuration of the present embodiment,
The thin metal wire 15 is formed of the second insulating material 1 having the same shape and area as the shape and area of the back surface of the first semiconductor element 10.
4 and is fixed in contact therewith.

Further, as shown in FIG.
The insulating material 14 protrudes from the end of the back surface of the first semiconductor element 10, and the thin metal wire 15 contacts and is fixed to the part of the second insulating material 14 protruding from the back surface of the first semiconductor element 10. May be done. The amount of protrusion of the second insulating material 14 is not particularly limited as long as it is within a range smaller than the distance from the end of the first semiconductor element 10 to the wiring of the wiring board 12.

As described above, in the semiconductor device of the present embodiment, the thin metal wire is fixed in contact with the end of the second insulating material for bonding the semiconductor elements or the portion protruding from the back surface of the first semiconductor element. Therefore, the thin metal wires do not break by directly contacting the ends of the first semiconductor element, and the thin metal wires flow due to the resistance at the time of injection of the sealing resin in the sealing step, and the metal thin wires are short-circuited to each other. Therefore, stable electrical connection between the electrode of the second semiconductor element and the wiring of the wiring board can be ensured.

Next, a third embodiment will be described with reference to the drawings. Note that the same components as those in the first embodiment and the second embodiment are denoted by the same reference numerals, and common contents are omitted.

FIG. 5 is a sectional view showing the semiconductor device of this embodiment.

As shown in FIG. 5, the fine metal wire 15 is fixed by passing the fine metal wire 15 through the third insulating material 18 formed on the wiring on the wiring board 12. In this manner, the thin metal wire 15 is fixed by the third insulating material 18, thereby preventing the thin metal wire 15 from breaking.
Fine metal wire 1 due to flow of sealing resin 16 in the sealing step
It is possible to prevent a short circuit between the five.

As described above, in the semiconductor device according to the present embodiment, since the fine metal wire passes through and is fixed to the insulating material formed on the wiring of the wiring board, problems such as disconnection and short circuit of the fine metal wire can be prevented.

[0058]

According to the semiconductor device and the method of manufacturing the same of the present invention, a thin metal wire for electrically connecting the second semiconductor element and the wiring of the wiring board is formed on the electrode forming surface of the first semiconductor element and the wiring board. Breaking or short-circuiting of the thin metal wire can be prevented by being fixed by contacting the insulating material protruding from the space or the insulating material for bonding the semiconductor elements together.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 2 is a sectional view showing a semiconductor device and a method for manufacturing the same according to an embodiment of the present invention;

FIG. 3 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 4 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 5 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 6 is a sectional view showing a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st semiconductor element 2 1st insulating material 3 wiring board 4 2nd semiconductor element 5 2nd insulating material 6 Thin metal wire 7 Sealing resin 8 Ball electrode 9 Bump 10 1st semiconductor element 11 1st Insulating material 12 Wiring board 13 Second semiconductor element 14 Second insulating material 15 Metal wire 16 Sealing resin 17 Ball electrode 18 Third insulating material

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H01L 23/31

Claims (9)

[Claims] 1. A semiconductor device in which a plurality of semiconductor elements are stacked and mounted on a wiring board, wherein a wiring formed on the wiring board and an electrode of the semiconductor element are electrically connected by a thin metal wire. The thin metal wire is connected to and fixed to the insulating material formed on the side of the semiconductor element by protruding from between the wiring board and the semiconductor element bonded on the wiring board. Characteristic semiconductor device. 2. The semiconductor device according to claim 1, wherein the electrodes of the semiconductor element bonded on the wiring board and the wiring formed on the wiring board are electrically connected via bumps. Semiconductor device. 3. The semiconductor device bonded on the wiring board,
2. The semiconductor device according to claim 1, wherein a back surface of the semiconductor element is adhered on the wiring board. 4. An upper surface of a wiring board and an electrode formation surface of a first semiconductor element are adhered via a first insulating material, and a wiring formed on an upper surface of the wiring board and the first semiconductor element are bonded. Are electrically connected via bumps, and the back surface of a second semiconductor element smaller than the first semiconductor element is bonded to the back surface of the first semiconductor element via a second insulating material. The electrode of the second semiconductor element is electrically connected to the wiring of the wiring board by a thin metal wire, and the metal of the second insulating material protrudes from the back surface of the second semiconductor element. A semiconductor device, wherein thin wires are fixed in contact with each other. 5. The shape and area of the second insulating material are the same as the shape and area of the back surface of the first semiconductor element.
5. The semiconductor device according to claim 4, wherein a thin metal wire is fixed in contact with an end of said second insulating material. 6. The area of the second insulating material is larger than the area of the back surface of the first semiconductor element, and a thin metal wire is formed from the end of the back surface of the first semiconductor element of the second insulating material. The semiconductor device according to claim 4, wherein the semiconductor device is fixed in contact with the protruding portion. 7. A semiconductor device in which a plurality of semiconductor elements are stacked and mounted on a wiring board, wherein a wiring formed on the wiring board and an electrode of the semiconductor element are electrically connected by a thin metal wire. A semiconductor device, wherein the thin metal wire is connected and fixed through a third insulating material formed on the wiring. 8. A wiring formed on the wiring board and electrically connected to each other by a through hole inside the wiring board, wherein a ball electrode is formed on an external electrode formed on a back surface of the wiring board. The semiconductor device according to claim 1 or claim 4 or claim 7. 9. A step of laminating and mounting a plurality of semiconductor elements on an upper surface of a wiring substrate, and a step of electrically connecting electrodes of the semiconductor elements to wirings formed on the upper surface of the wiring substrate by thin metal wires. Wherein in the step of electrically connecting an electrode of the semiconductor element and a wiring formed on an upper surface of the wiring board with a thin metal wire, the upper surface of the wiring board and the semiconductor element are formed. And a portion of the first insulating material that sticks out to the side of the semiconductor element or a part of the second insulating material that sticks the plurality of semiconductor elements together and sticks out from the bonding surface of the plurality of semiconductor elements. A method for manufacturing a semiconductor device, comprising: contacting and fixing the thin metal wire to a portion.