JP2002252209A5 - Plasma etching apparatus and plasma resistant member - Google Patents

Plasma etching apparatus and plasma resistant member Download PDF

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Publication number
JP2002252209A5
JP2002252209A5 JP2001047278A JP2001047278A JP2002252209A5 JP 2002252209 A5 JP2002252209 A5 JP 2002252209A5 JP 2001047278 A JP2001047278 A JP 2001047278A JP 2001047278 A JP2001047278 A JP 2001047278A JP 2002252209 A5 JP2002252209 A5 JP 2002252209A5
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JP
Japan
Prior art keywords
plasma
resistant member
etching apparatus
plasma etching
yttrium fluoride
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Pending
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JP2001047278A
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Japanese (ja)
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JP2002252209A (en
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Publication date
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Priority to JP2001047278A priority Critical patent/JP2002252209A/en
Priority claimed from JP2001047278A external-priority patent/JP2002252209A/en
Priority to PCT/JP2002/001526 priority patent/WO2002067311A1/en
Publication of JP2002252209A publication Critical patent/JP2002252209A/en
Publication of JP2002252209A5 publication Critical patent/JP2002252209A5/en
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【特許請求の範囲】
【請求項１】 被処理物にドライエッチング処理を施して該被処理物の表面を微細加工するプラズマエッチング装置において、
処理室内に配設されている耐プラズマ性部材は、少なくとも表面がフッ化イットリウムで形成されていることを特徴とするプラズマエッチング装置。
【請求項２】 前記耐プラズマ性部材は、素材表面にフッ化イットリウムが溶射されて形成されていることを特徴とする請求項１記載のプラズマエッチング装置。
【請求項３】 前記耐プラズマ性部材は、フッ化イットリウムの焼結体で形成されていることを特徴とする請求項１記載のプラズマエッチング装置。
【請求項４】 被処理物にドライエッチング処理を施して該被処理物の表面を微細加工するプラズマエッチング装置の処理室内に配設された耐プラズマ性部材であって、
少なくとも表面がフッ化イットリウムで形成されていることを特徴とする耐プラズマ性部材。
【請求項５】 前記耐プラズマ性部材は、素材表面に前記フッ化イットリウムが溶射されて形成されていることを特徴とする請求項４記載の耐プラズマ性部材。
【請求項６】 前記耐プラズマ性部材は、フッ化イットリウムの焼結体で形成されていることを特徴とする請求項４記載の耐プラズマ性部材。
【請求項７】 前記耐プラズマ性部材は、絶縁リング、電極保護部材、バッフル板及びベローズカバーの少なくとも１つであることを特徴とする請求項４乃至６のいずれか１項に記載の耐プラズマ性部材。 [Claims]
1. A plasma etching apparatus for subjecting an object to be processed to dry etching to finely process the surface of the object.
A plasma etching apparatus, wherein at least a surface of a plasma-resistant member provided in a processing chamber is formed of yttrium fluoride.
2. The plasma etching apparatus according to claim 1, wherein the plasma-resistant member is formed by spraying yttrium fluoride on a surface of a material.
3. The plasma etching apparatus according to claim 1, wherein the plasma-resistant member is formed of a sintered body of yttrium fluoride.
4. A plasma-resistant member provided in a processing chamber of a plasma etching apparatus for subjecting an object to be processed to dry etching and finely processing the surface of the object to be processed,
A plasma-resistant member having at least a surface formed of yttrium fluoride.
5. The plasma resistant member according to claim 4, wherein said plasma resistant member is formed by spraying said yttrium fluoride on a material surface.
Wherein said plasma resistance member, plasma-resistant member according to claim 4, characterized in that it is formed of a sintered body of yttrium fluoride.
7. The plasma-resistant member according to claim 4, wherein said plasma-resistant member is at least one of an insulating ring, an electrode protection member, a baffle plate, and a bellows cover. Sex members.

【０００１】
【発明の属する技術分野】
本発明はプラズマエッチング装置及び耐プラズマ性部材に関し、より詳しくは半導体ウエハ等の被処理物にドライエッチング処理を施して該被処理物に微細加工を行うプラズマエッチング装置及びこのプラズマエッチング装置に適用される耐プラズマ性部材に関する。 [0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma etching apparatus and a plasma resistant member , and more particularly, to a plasma etching apparatus that performs a dry etching process on a workpiece such as a semiconductor wafer and performs fine processing on the workpiece, and is applied to the plasma etching apparatus. To a plasma-resistant member .

本発明はこのような問題点に鑑みなされたものであって、より一層の耐久性を向上させることのできる耐プラズマ性部材を具備したプラズマエッチング装置及びこのプラズマエッチング装置に適用される耐プラズマ性部材を提供することを目的とする。 The present invention has been made in view of such a problem, and a plasma etching apparatus provided with a plasma resistant member capable of further improving durability and a plasma resistant apparatus applied to the plasma etching apparatus An object is to provide a member .

本発明はこのような知見に基づきなされたものであって、本発明に係るプラズマエッチング装置は、処理室内に配設されている耐プラズマ性部材が、少なくとも表面がフッ化イットリウムで形成されていることを特徴としている。また、本発明に係る耐プラズマ性部材は、少なくとも表面がフッ化イットリウムで形成されていることを特徴としている。 The present invention was made based on these findings, a plasma etching apparatus according to the present invention, plasma-resistant member which is disposed in the processing chamber, at least the surface is formed by yttrium fluoride It is characterized by: Further, the plasma-resistant member according to the present invention is characterized in that at least the surface is formed of yttrium fluoride.

また、本発明装置に適用される耐プラズマ性部材及び本発明に係る耐プラズマ性部材は、素材表面にフッ化イットリウムを溶射して耐プラズマ性部材としたものでもよく、またフッ化イットリウムの焼結体で形成したものであってもよい。 Also, plasma-resistant member according to the present invention apparatus applied plasma resistance member and the invention may be obtained by a plasma-resistant member by spraying a yttrium fluoride on the surface of the material, or off Tsu of It may be formed of a sintered body of yttrium .

【００４９】
【発明の効果】
以上詳述したように本発明に係るプラズマエッチング装置は、被処理物にドライエッチング処理を施して該被処理物の表面を微細加工するプラズマエッチング装置において、装置本体の内部に配設されている耐プラズマ性部材は、少なくとも表面がフッ化イットリウムで形成されているので、耐プラズマ性部材の表面は処理ガス（ＣＦ系ガス）に対して化学的に安定したものとなり、固体微粒子の飛散が抑制され、耐プラズマ性部材の消耗を低減させることができ耐久性向上を図ることができる。また、本発明に係る耐プラズマ性部材は、少なくとも表面がフッ化イットリウムで形成されているので、その表面は処理ガス（ＣＦ系ガス）に対して化学的に安定したものとなり、固体微粒子の飛散が抑制され、消耗を低減させることができ耐久性向上を図ることができる。 [0049]
【The invention's effect】
As described in detail above, the plasma etching apparatus according to the present invention is a plasma etching apparatus that performs a dry etching process on an object to be processed to finely process the surface of the object, and is disposed inside the apparatus body. Since at least the surface of the plasma-resistant member is made of yttrium fluoride, the surface of the plasma-resistant member is chemically stable with respect to the processing gas (CF-based gas), and the scattering of solid fine particles is suppressed. Therefore, the consumption of the plasma-resistant member can be reduced, and the durability can be improved. Further, since the plasma-resistant member according to the present invention has at least a surface made of yttrium fluoride, its surface becomes chemically stable with respect to the processing gas (CF-based gas), and the scattering of solid fine particles. Is suppressed, wear can be reduced, and durability can be improved.

また、本発明装置に適用される耐プラズマ性部材及び本発明に係る耐プラズマ性部材は、素材表面にフッ化イットリウムを溶射して形成することができ、またフッ化イットリウムの焼結体で形成することもでき、いずれの方法で形成しても上記効果を容易に奏することができる。 Further, the plasma-resistant member applied to the apparatus of the present invention and the plasma-resistant member according to the present invention can be formed by spraying yttrium fluoride on the surface of the material, and formed of a sintered body of yttrium fluoride. The above-described effects can be easily obtained by forming the film by any method.

JP2001047278A 2001-02-22 2001-02-22 Plasma etching apparatus Pending JP2002252209A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001047278A JP2002252209A (en) 2001-02-22 2001-02-22 Plasma etching apparatus
PCT/JP2002/001526 WO2002067311A1 (en) 2001-02-22 2002-02-21 Plasma processing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001047278A JP2002252209A (en) 2001-02-22 2001-02-22 Plasma etching apparatus

Publications (2)

Publication Number Publication Date
JP2002252209A JP2002252209A (en) 2002-09-06
JP2002252209A5 true JP2002252209A5 (en) 2008-04-03

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WO (1) WO2002067311A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1249789C (en) * 2002-11-28 2006-04-05 东京毅力科创株式会社 Plasma processing container internal parts
JP3894313B2 (en) 2002-12-19 2007-03-22 信越化学工業株式会社 Fluoride-containing film, coating member, and method for forming fluoride-containing film
US7461614B2 (en) * 2003-11-12 2008-12-09 Tokyo Electron Limited Method and apparatus for improved baffle plate
JP2007063070A (en) * 2005-08-31 2007-03-15 Toshiba Ceramics Co Ltd Method for manufacturing plasma-resistant yttria sintered compact
JP4985928B2 (en) * 2005-10-21 2012-07-25 信越化学工業株式会社 Multi-layer coated corrosion resistant member
JP4905697B2 (en) * 2006-04-20 2012-03-28 信越化学工業株式会社 Conductive plasma resistant material
JP4512603B2 (en) * 2007-02-26 2010-07-28 トーカロ株式会社 Halogen gas resistant semiconductor processing equipment components
JP4591722B2 (en) * 2008-01-24 2010-12-01 信越化学工業株式会社 Manufacturing method of ceramic sprayed member
JP5861612B2 (en) * 2011-11-10 2016-02-16 信越化学工業株式会社 Rare earth element fluoride powder sprayed material and rare earth element fluoride sprayed member
JP6034156B2 (en) 2011-12-05 2016-11-30 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US9238863B2 (en) 2012-02-03 2016-01-19 Tocalo Co., Ltd. Method for blackening white fluoride spray coating, and fluoride spray coating covered member having a blackened layer on its surface

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
JPH11229185A (en) * 1998-02-13 1999-08-24 Kobe Steel Ltd Aluminum material excellent in resistance to heat cracking and corrosion
JP4283925B2 (en) * 1999-01-27 2009-06-24 太平洋セメント株式会社 Corrosion resistant material
JP2000252351A (en) * 1999-02-26 2000-09-14 Taiheiyo Cement Corp Electrostatic chuck and its manufacture
JP2000306845A (en) * 1999-04-19 2000-11-02 Tokyo Electron Ltd Magnetron plasma treatment apparatus and treatment method
JP2002037683A (en) * 2000-07-24 2002-02-06 Toshiba Ceramics Co Ltd Plasma resistant element and its manufacturing method

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