JP2002252209A - Plasma etching apparatus - Google Patents
Plasma etching apparatusInfo
- Publication number
- JP2002252209A JP2002252209A JP2001047278A JP2001047278A JP2002252209A JP 2002252209 A JP2002252209 A JP 2002252209A JP 2001047278 A JP2001047278 A JP 2001047278A JP 2001047278 A JP2001047278 A JP 2001047278A JP 2002252209 A JP2002252209 A JP 2002252209A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- resistant member
- etching apparatus
- alf
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はプラズマエッチング
装置に関し、より詳しくは半導体ウエハ等の被処理物に
ドライエッチング処理を施して該被処理物に微細加工を
行うプラズマエッチング装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a plasma etching apparatus, and more particularly, to a plasma etching apparatus for subjecting an object such as a semiconductor wafer to a dry etching process and performing fine processing on the object.
【０００２】[0002]
【従来の技術】従来より、半導体製造工程ではプラズマ
エッチング装置を使用することにより、半導体ウエハ等
の被処理物に微細加工を施すことが行われている。2. Description of the Related Art Conventionally, in a semiconductor manufacturing process, an object to be processed such as a semiconductor wafer is finely processed by using a plasma etching apparatus.
【０００３】すなわち、この種のプラズマエッチング装
置では、気密な処理室内に上部電極と下部電極とを対向
状に配設すると共に、上部電極及び下部電極の周辺に耐
プラズマ性部材を配設し、被処理物が載置された下部電
極及び上部電極に高周波電力を印加して下部電極と上部
電極との間にグロー放電を生じさせると共に処理室内に
処理ガスを供給し、これにより前記処理ガスを上部電極
及び下部電極間に閉じ込めて高密度プラズマを生成し、
該高密度プラズマにより被処理物にエッチング加工を施
している。また、処理ガスとしては、従来より、ＣＦ
（フロロカーボン）系ガスが広く使用されている。That is, in this type of plasma etching apparatus, an upper electrode and a lower electrode are disposed in an airtight processing chamber so as to face each other, and a plasma-resistant member is disposed around the upper electrode and the lower electrode. A high-frequency power is applied to the lower electrode and the upper electrode on which the object is placed to generate a glow discharge between the lower electrode and the upper electrode, and a processing gas is supplied into the processing chamber. Generates high density plasma by confining between upper electrode and lower electrode,
The object to be processed is etched by the high-density plasma. As a processing gas, conventionally, CF
(Fluorocarbon) -based gases are widely used.
【０００４】前記耐プラズマ性部材に使用される材料と
しては、従来は、表面に酸化処理が施されたＡｌ（アル
ミアルマイト）やＡｌ2Ｏ3（アルミナ）製の焼結セラミ
ックスが使用されていたが、斯かるＡｌ成分を含有した
材料は、上記ＣＦ系ガスと反応してＡｌＦ3（フッ化ア
ルミニウム）を生成し、斯かるＡｌＦ3が固体微粒子と
なって処理室内を飛散するため、該固体微粒子が前記被
処理物の表面に固着して所謂Ａｌ汚染を招来するという
欠点があった。As a material used for the plasma-resistant member, conventionally, sintered ceramics made of Al (aluminum alumite) or Al 2 O 3 (alumina) whose surface has been subjected to an oxidation treatment have been used. However, such a material containing an Al component reacts with the CF-based gas to generate AlF 3 (aluminum fluoride), and the AlF 3 becomes solid fine particles and scatters in the processing chamber. There is a drawback that the fine particles adhere to the surface of the object to be treated and cause so-called Al contamination.
【０００５】そこで、最近では、耐プラズマ性に優れた
酸化イットリウム（Ｙ2Ｏ3）をＡｌ等の素材表面に溶射
したＹ2Ｏ3溶射材が採用されつつある。Therefore, recently, a Y 2 O 3 sprayed material in which yttrium oxide (Y 2 O 3 ) having excellent plasma resistance is sprayed on the surface of a material such as Al has been adopted.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記プ
ラズマエッチング装置では、Ｙ2Ｏ3溶射材を耐プラズマ
性部材として使用した場合であっても、Ｙ2Ｏ3がＣＦ系
ガスと反応するため、その表層面がフッ化してフッ化イ
ットリウム（ＹＦ3）を生成し、このＹＦ3が固体微粒子
となってプラズマ雰囲気中を飛散する。すなわち、Ｙ2
Ｏ3溶射材を耐プラズマ性部材として使用した場合は被
処理物へのＡｌ汚染は回避することができるものの、Ｃ
Ｆ系ガスとの反応生成物であるＹＦ3が固体微粒子とな
ってプラズマ雰囲気中を飛散し、その結果、Ｙ2Ｏ3溶射
材である耐プラズマ性部材の表面が削り取られることと
なって該耐プラズマ性部材が容易に消耗してしまうとい
う問題点があった。[0007] However, in the plasma etching apparatus, even when using Y 2 O 3 thermal spray material as a plasma resistant member, since Y 2 O 3 reacts with CF gas, The surface layer is fluorinated to generate yttrium fluoride (YF 3 ), and the YF 3 becomes solid fine particles and scatters in the plasma atmosphere. That is, Y 2
When the O 3 sprayed material is used as a plasma-resistant member, although the Al contamination on the workpiece can be avoided,
Scattered through the plasma atmosphere YF 3 is a reaction product of an F-based gas is a solid particulate, as a result, the become the surface of the plasma-resistant member is a Y 2 O 3 thermal spraying material is scraped off There is a problem that the plasma resistant member is easily consumed.
【０００７】本発明はこのような問題点に鑑みなされた
ものであって、より一層の耐久性を向上させることので
きる耐プラズマ性部材を具備したプラズマエッチング装
置を提供することを目的とする。[0007] The present invention has been made in view of the above problems, and has as its object to provide a plasma etching apparatus provided with a plasma-resistant member capable of further improving the durability.
【０００８】[0008]
【課題を解決するための手段】耐プラズマ性部材の耐久
性向上を図るためには、当該耐プラズマ性部材から飛散
し得る固体微粒子の発生を抑制する必要があり、そのた
めには処理ガスであるＣＦ系ガスとの間で化学反応が生
じ難く、ＣＦ系ガスに対し化学的に安定した材料種を選
定する必要がある。In order to improve the durability of the plasma-resistant member, it is necessary to suppress the generation of solid fine particles that can be scattered from the plasma-resistant member. It is necessary to select a material type that does not easily cause a chemical reaction with the CF-based gas and is chemically stable with respect to the CF-based gas.
【０００９】そして、このような観点からは、例えばＡ
ｌＦ3自体を耐プラズマ性部材の部品材料として選定す
ることが考えられる。すなわち、ＡｌＦ3は、上述した
ようにＣＦ系ガスとアルミアルマイトやＡｌ2Ｏ3焼結体
との反応生成物であることから、アルミアルマイトやＡ
ｌ2Ｏ3焼結体に比べて化学的に安定した物質と考えら
れ、したがって、ＡｌＦ3自体を直接耐プラズマ性部材
として使用することにより固体微粒子を効果的に低減す
ることができると考えられる。From such a viewpoint, for example, A
It is conceivable to select lF 3 itself as part material plasma resistance member. That is, since AlF 3 is a reaction product between the CF-based gas and aluminum alumite or Al 2 O 3 sintered body as described above, aluminum alumite or A
compared to l 2 O 3 sintered body is considered chemically stable material, therefore, is considered possible to effectively reduce the fine solid particles by the use of AlF 3 itself as a direct plasma-resistant member .
【００１０】しかしながら、本発明者らの実験結果によ
り、ＡｌＦ3は蒸気圧が高く、プラズマエッチング装置
の運転条件によってはＡｌＦ3の蒸気圧が処理室内の圧
力に近付き、その結果ＡｌＦ3が固体微粒子として脱落
し、プラズマ雰囲気中を飛散し易くなるということが判
明した。[0010] However, the experimental results of the present inventors, AlF 3 has a high vapor pressure, the operating conditions of the plasma etching apparatus approaches the pressure in the processing chamber vapor pressure of AlF 3, as a result AlF 3 solid particles It was found that it was easy to scatter in the plasma atmosphere.
【００１１】そこで、本発明者らは、ＡｌＦ3よりも蒸
気圧が低く、しかもＣＦ系ガスに対し化学的に安定した
材料を得るべく鋭意研究したところ、ＹＦ3が斯かる条
件に適合し、該ＹＦ3を耐プラズマ性部材の部品材料と
して使用することにより、表層面でのフッ化反応を抑制
すると共に、プラズマ雰囲気中でのフッ化物の飛散を低
減することができ、これにより耐プラズマ性部材の耐久
性向上を図ることができるという知見を得た。The present inventors have conducted intensive studies to obtain a material which has a lower vapor pressure than AlF 3 and is chemically stable with respect to a CF-based gas, and YF 3 conforms to such conditions. By using YF 3 as a component material of the plasma-resistant member, it is possible to suppress the fluorination reaction on the surface layer and to reduce the scattering of fluoride in the plasma atmosphere. It has been found that the durability of the member can be improved.
【００１２】本発明はこのような知見に基づきなされた
ものであって、本発明に係るプラズマエッチング装置
は、処理室内に配設されている耐プラズマ性部材は、少
なくとも表面がフッ化イットリウムで形成されているこ
とを特徴としている。The present invention has been made based on such knowledge. In the plasma etching apparatus according to the present invention, at least the surface of the plasma-resistant member provided in the processing chamber is made of yttrium fluoride. It is characterized by being.
【００１３】上記構成によれば、耐プラズマ性部材をフ
ッ化イットリウム（ＹＦ3）で形成しているので、固体
微粒子の発生が抑制され、処理室内の耐プラズマ性部材
の消耗度合を低減することができ、耐久性の向上を図る
ことができる。According to the above structure, since the plasma-resistant member is formed of yttrium fluoride (YF 3 ), the generation of solid fine particles is suppressed, and the degree of wear of the plasma-resistant member in the processing chamber is reduced. And durability can be improved.
【００１４】また、本発明は、素材表面にフッ化イット
リウムを溶射して耐プラズマ性部材を形成してもよく、
また前記耐プラズマ性部材をフッ化イットリウムの焼結
体で形成するのも好ましい。In the present invention, a plasma-resistant member may be formed by spraying yttrium fluoride on the surface of the material.
It is also preferable that the plasma resistant member is formed of a sintered body of yttrium fluoride.
【００１５】[0015]
【発明の実施の形態】次に、本発明の実施の形態を詳説
する。Next, embodiments of the present invention will be described in detail.
【００１６】図１は本発明に係るプラズマエッチング装
置の内部構造図であって、装置本体１には導電性材料で
形成された下部電極２が配設されている。該下部電極２
の上面には被処理物としての半導体ウエハ３を吸着保持
する静電チャック４が載設されると共に、該下部電極２
の下方には矢印Ａ方向に昇降可能な昇降軸５が配設さ
れ、下部電極２は該昇降軸５に支持されている。また、
昇降軸５は整合器６を介して高周波電源７に接続されて
いる。FIG. 1 is a diagram showing the internal structure of a plasma etching apparatus according to the present invention. A lower electrode 2 made of a conductive material is provided on a main body 1 of the apparatus. The lower electrode 2
An electrostatic chuck 4 for attracting and holding a semiconductor wafer 3 as an object to be processed is mounted on the upper surface of the lower electrode 2.
The lower electrode 2 is supported by the elevating shaft 5 which can be moved up and down in the direction of arrow A. Also,
The elevating shaft 5 is connected to a high-frequency power source 7 via a matching unit 6.
【００１７】また、前記下部電極５の底面及び側面は電
極保護部材８で保護されると共に、該電極保護部材８の
側面及び底面は導電性部材９で覆われ、さらに導電性部
材９と装置本体１の底面との間にはステンレス等の導電
性材料で形成された伸縮自在なベローズ１０が着座され
ている。尚、電極保護部材８の下面には酸化処理された
Ａｌ等の導電性材料からなる管状部材１１が設けられ、
前記昇降軸５は前記管状部材１１に貫挿されている。The bottom and side surfaces of the lower electrode 5 are protected by an electrode protection member 8, and the side and bottom surfaces of the electrode protection member 8 are covered by a conductive member 9. A stretchable bellows 10 made of a conductive material such as stainless steel is seated between the bottom surface of the bellows 1 and the bottom surface of the bellows. A tubular member 11 made of a conductive material such as oxidized Al is provided on the lower surface of the electrode protection member 8.
The elevating shaft 5 is inserted through the tubular member 11.
【００１８】また、電極保護部材８の側面にはバッフル
板１２が鍔状に固着され、さらに、電極保護部材８の端
面と静電チャック４の側面との間には絶縁リング１３が
介装されている。また、バッフル板１２の下面からは第
１のベローズカバー１４が垂設され、さらに装置本体１
の底面からは第１のベローズカバー１４と一部が重なり
合うように第２のベローズカバー１５が立設されてい
る。A baffle plate 12 is fixed to the side surface of the electrode protection member 8 in a flange shape, and an insulating ring 13 is interposed between the end surface of the electrode protection member 8 and the side surface of the electrostatic chuck 4. ing. Further, a first bellows cover 14 is vertically provided from the lower surface of the baffle plate 12, and
A second bellows cover 15 is erected from the bottom surface of the first bellows so as to partially overlap the first bellows cover 14.
【００１９】また、装置本体１の上方には導電性材料で
形成された上部電極１６が前記下部電極２と対向状に配
設されている。該上部電極１６には多数のガス吐出孔１
７が貫設され、装置本体１の上面に設けられたガス供給
口１８からＣＦ系ガスを含む処理ガスがガス吐出孔１７
を介して処理室２２に供給される。すなわち、ガス供給
口１８は流量調整弁１９及び開閉弁２０を介してガス供
給源２１に接続され、ガス供給源２１からの処理ガスが
開閉弁２０及び流量調整弁１９を介してガス供給口１８
に供給され、処理ガスはガス吐出孔１７から吐出されて
処理室２２に導入される。An upper electrode 16 made of a conductive material is disposed above the apparatus main body 1 so as to face the lower electrode 2. The upper electrode 16 has many gas discharge holes 1.
7, and a processing gas containing a CF-based gas is supplied from a gas supply port 18 provided on the upper surface of the apparatus body 1 to a gas discharge hole 17.
Is supplied to the processing chamber 22 via the That is, the gas supply port 18 is connected to the gas supply source 21 via the flow control valve 19 and the opening / closing valve 20, and the processing gas from the gas supply source 21 is supplied to the gas supply port 18 via the opening / closing valve 20 and the flow control valve 19.
The processing gas is discharged from the gas discharge holes 17 and introduced into the processing chamber 22.
【００２０】また、装置本体１の底部には排出口２３が
貫設されると共に、該排出口２３は真空ポンプ２４に接
続され、さらに装置本体１の下方側面には被処理物搬送
口２５が貫設され、半導体ウエハ３の搬入・搬出を行
う。A discharge port 23 is provided through the bottom of the apparatus main body 1, and the discharge port 23 is connected to a vacuum pump 24, and a workpiece transfer port 25 is provided on a lower side surface of the apparatus main body 1. The semiconductor wafer 3 is carried in and out.
【００２１】そして、装置本体１の外周には被処理物で
ある半導体ウエハ３に対し磁場が水平となるように永久
磁石２６が配設されている。A permanent magnet 26 is provided on the outer periphery of the apparatus main body 1 so that the magnetic field is horizontal with respect to the semiconductor wafer 3 as an object to be processed.
【００２２】このように構成されたプラズマエッチング
装置においては、不図示の駆動機構により昇降軸５を矢
印Ａ方向に移動させて半導体ウエハ３の位置調整を行っ
た後、該昇降軸５は給電棒としての作用をなし、高周波
電源７から、例えば、２７．１２ＭＨｚの高周波電力が
下部電極２に印加されると、グロー放電が生じて電場と
磁場とが直交する直交磁界が形成される。In the plasma etching apparatus having the above-described configuration, the position of the semiconductor wafer 3 is adjusted by moving the elevating shaft 5 in the direction of arrow A by a driving mechanism (not shown), and then the elevating shaft 5 is connected to the power supply rod. When high-frequency power of, for example, 27.12 MHz is applied to the lower electrode 2 from the high-frequency power supply 7, a glow discharge occurs, and an orthogonal magnetic field in which an electric field and a magnetic field are orthogonal to each other is formed.
【００２３】そして、処理室２２が真空ポンプ２４によ
り所定の真空雰囲気に減圧され、ガス供給源２１からの
処理ガスが処理室２２に供給されると、該処理ガスがプ
ラズマ化し、マスキングされている半導体ウエハ３に所
望の微細加工が施される。When the pressure in the processing chamber 22 is reduced to a predetermined vacuum atmosphere by the vacuum pump 24 and the processing gas from the gas supply source 21 is supplied to the processing chamber 22, the processing gas is turned into plasma and masked. Desired fine processing is performed on the semiconductor wafer 3.
【００２４】しかして、本実施の形態では、絶縁リング
１３、電極保護部材８、バッフル板１２、及び第１及び
第２のベローズカバー１４、１５等、耐プラズマ性能が
要求される部材（耐プラズマ性部材）が、ＹＦ3で形成
されている。In the present embodiment, however, members requiring plasma resistance (such as plasma resistance) such as the insulating ring 13, the electrode protection member 8, the baffle plate 12, and the first and second bellows covers 14 and 15 are provided. ) Is formed of YF 3 .
【００２５】すなわち、耐プラズマ性部材の消耗度合を
低減して耐久性向上を図るためには耐プラズマ性部材か
ら飛散する固体微粒子の発生を抑制する必要があり、そ
のためには処理ガスであるＣＦ系ガスとの間で化学反応
の起こり難い材料を耐プラズマ性部材の部品材料に選定
する必要がある。That is, in order to reduce the degree of wear of the plasma-resistant member and improve the durability, it is necessary to suppress the generation of solid fine particles scattered from the plasma-resistant member. It is necessary to select a material that does not easily cause a chemical reaction with the system gas as a component material of the plasma-resistant member.
【００２６】そして、このような観点からは、例えばＡ
ｌＦ3自体を耐プラズマ性部材の部品材料として選定す
ることが考えられる。すなわち、従来より、耐プラズマ
性部材としてアルミアルマイトやＡｌ2Ｏ3焼結体が使用
されていたが、これらアルミアルマイトやＡｌ2Ｏ3焼結
体とＣＦ系ガスとが反応することにより、ＡｌＦ3が生
成される。すなわち、ＡｌＦ3は、ＣＦ系ガスとアルミ
アルマイトやＡｌ2Ｏ3焼結体との反応生成物であること
から、アルミアルマイトやＡｌ2Ｏ3焼結体に比べＣＦ系
ガスに対し化学的に安定した物質と考えられ、したがっ
て、ＡｌＦ3自体を直接耐プラズマ性部材として使用す
ることにより固体微粒子を効果的に低減することができ
ると考えられる。From such a viewpoint, for example, A
It is conceivable to select lF 3 itself as part material plasma resistance member. That is, conventionally, aluminum alumite or Al 2 O 3 sintered body has been used as a plasma-resistant member, but the aluminum alumite or Al 2 O 3 sintered body reacts with the CF-based gas to form an AlF 3 is generated. That, AlF 3, since the reaction product of a CF-based gas and aluminum anodized, Al 2 O 3, or the sintered body, to CF gas compared to aluminum anodized, Al 2 O 3, or the sintered body chemically It is considered to be a stable substance. Therefore, it is considered that solid fine particles can be effectively reduced by directly using AlF 3 as a plasma-resistant member.
【００２７】しかしながら、本発明者らの実験結果によ
り、ＡｌＦ3は蒸気圧が高く、プラズマエッチング装置
の運転条件によってはＡｌＦ3は蒸気圧が処理室内の圧
力に近付き、その結果ＡｌＦ3が固体微粒子として脱落
し、プラズマ雰囲気中を飛散し易くなるということが判
明した。[0027] However, the experimental results of the present inventors, AlF 3 has a high vapor pressure, the operating conditions of the plasma etching apparatus AlF 3 approaches the pressure in the processing chamber vapor pressure, resulting AlF 3 solid particles It was found that it was easy to scatter in the plasma atmosphere.
【００２８】一方、ＹＦ3も、ＡｌＦ3と略同様、Ｙ2Ｏ3
溶射材を耐プラズマ性部材として使用した場合にＹ2Ｏ3
とＣＦ系ガスとの間で生成される反応生成物であり、し
たがってＹＦ3はＹ2Ｏ3に比べて化学的に安定した材料
であるが、ＹＦ3はＡｌＦ3よりも蒸気圧が低く、したが
って処理室内の圧力との圧力差がＡｌＦ3の場合に比べ
て大きいため、結晶粒子がその表層面から脱落し難く、
固体微粒子となってプラズマ雰囲気中を飛散するのを抑
制することができることが判明した。On the other hand, YF 3 is also substantially the same as AlF 3, Y 2 O 3
When the sprayed material is used as a plasma resistant member, Y 2 O 3
YF 3 is a chemically stable material as compared with Y 2 O 3 , but YF 3 has a lower vapor pressure than AlF 3 , Therefore, since the pressure difference from the pressure in the processing chamber is larger than that in the case of AlF 3 , the crystal particles are less likely to fall from the surface layer,
It has been found that it is possible to suppress the particles from being scattered in the plasma atmosphere as solid fine particles.
【００２９】表１はＹＦ3とＡｌＦ3と室温（２０℃）、
１００℃、２００℃における各蒸気圧を示している。Table 1 shows that YF 3 , AlF 3 and room temperature (20 ° C.)
Each vapor pressure at 100 ° C. and 200 ° C. is shown.
【００３０】[0030]
【表１】 [Table 1]
【００３１】この表１から明らかなようにＡｌＦ3の蒸
気圧はＹＦ3の蒸気圧に比べて高く、運転条件によって
は処理室２２の圧力（４〜５×１０-2Ｐａ）に近付き、
このためＡｌＦ3が表層部から脱落して飛散し易くな
る。換言すると、ＹＦ3の蒸気圧はＡｌＦ3の蒸気圧に比
べて低く、処理室２２との圧力差が大きいため、ＹＦ3
はＡｌＦ3に比べて固体微粒子の発生が抑制され、その
結果固体微粒子のプラズマ雰囲気中での飛散を低減する
ことができる。As is apparent from Table 1, the vapor pressure of AlF 3 is higher than that of YF 3 , and approaches the pressure of the processing chamber 22 (4 to 5 × 10 -2 Pa) depending on the operating conditions.
For this reason, AlF 3 easily falls off the surface layer and scatters. In other words, since the vapor pressure of YF 3 is lower than the vapor pressure of AlF 3 and the pressure difference with the processing chamber 22 is large, YF 3
As compared with AlF 3 , generation of solid fine particles is suppressed, and as a result, scattering of solid fine particles in a plasma atmosphere can be reduced.
【００３２】そこで、本実施の形態では、耐プラズマ性
部材の部品材料として、ＡｌＦ3に比べて蒸気圧が低
く、またＹ2Ｏ3よりも化学的に安定したＹＦ3を使用す
ることとし、耐プラズマ性部材の消耗を極力回避して耐
久性向上を図っている。Therefore, in the present embodiment, YF 3, which has a lower vapor pressure than AlF 3 and is more chemically stable than Y 2 O 3 , is used as a component material of the plasma-resistant member. The durability of the plasma-resistant member is reduced by minimizing wear.
【００３３】このように本実施の形態では、耐プラズマ
性部材をＹＦ3で形成しているので、固体微粒子の発生
を低減させることができ、耐プラズマ性部材の消耗度合
をより一層抑制することができ、更なる耐久性向上を図
ることができる。As described above, in this embodiment, since the plasma-resistant member is formed of YF 3 , the generation of solid fine particles can be reduced, and the degree of wear of the plasma-resistant member can be further suppressed. Thus, the durability can be further improved.
【００３４】尚、本発明は上記実施の形態に限定される
ものではない。上述した耐プラズマ性部材は、少なくと
も表層面がＹＦ3で形成されていればプラズマ雰囲気中
での固体微粒子の発生を抑制することができ、所期の目
的を達成することができる。したがって、耐プラズマ性
部材は、Ａｌ等の素材表面にＹＦ3を溶射したＹＦ3溶射
品でもよく、或いはＹＦ3の焼結体で形成してもよい。The present invention is not limited to the above embodiment. In the above-described plasma resistant member, if at least the surface layer is formed of YF 3 , the generation of solid fine particles in a plasma atmosphere can be suppressed, and the intended purpose can be achieved. Therefore, the plasma resistant member may be a YF 3 sprayed product in which YF 3 is sprayed on the surface of a material such as Al, or may be formed of a sintered body of YF 3 .
【００３５】また、上記実施の形態では装置本体１の外
周に永久磁石２６を配設した磁場アシスト方式のプラズ
マエッチング装置を例に説明したが、他の方式、例え
ば、永久磁石２６を設ける代わりに、上部電極及び下部
電極の双方に高周波電力を印加してプラズマを発生させ
るイオンアシスト方式のプラズマエッチング装置につい
ても同様に適用することができるのはいうまでもない。In the above-described embodiment, the magnetic field assist type plasma etching apparatus in which the permanent magnet 26 is disposed on the outer periphery of the apparatus body 1 has been described as an example. However, other methods, for example, instead of providing the permanent magnet 26, Needless to say, the present invention can be similarly applied to an ion assist type plasma etching apparatus that generates plasma by applying high frequency power to both the upper electrode and the lower electrode.
【００３６】[0036]
【実施例】次に、本発明の実施例を具体的に説明する。Next, embodiments of the present invention will be described specifically.
【００３７】〔第１の実施例〕本発明者らは、Ｙ2Ａｌ5
Ｏ12（イットリウム−アルミニウム−ガーネット；以
下、「ＹＡＧ」という）及び焼結助剤としてＹ（イット
リウム）を添加したＳｉ 3Ｎ4焼結体（以下、単に「Ｓｉ
3Ｎ4」という）を試験片とし、高周波電力１４００Ｗ、
処理室内の圧力５．３Ｐａ（４．０×１０-2Torr）の
下、ＣＦ4ガスを処理室に供給して前記試験片にプラズ
マ照射を行い、プラズマ照射前後の表面組成をＸ線光電
子分光法で測定した。[First Embodiment] The present inventors consider that YTwoAlFive
O12(Yttrium-aluminum-garnet; hereinafter
Below, referred to as “YAG”) and Y (it) as a sintering aid.
(Li) -added Si ThreeNFourA sintered body (hereinafter simply referred to as “Si
ThreeNFour") As a test piece, a high-frequency power of 1400 W,
The pressure in the processing chamber is 5.3 Pa (4.0 × 10-2Torr)
Bottom, CFFourGas is supplied to the processing chamber and plasma is added to the test piece.
Irradiation and surface composition before and after plasma irradiation
Measured by proton spectroscopy.
【００３８】表２はＹＡＧのプラズマ照射前後の表面元
素の組成比を示し、表３はＳｉ3Ｎ4のプラスマ照射前後
の表面元素の組成比を示している。Table 2 shows the composition ratio of the surface elements before and after YAG plasma irradiation, and Table 3 shows the composition ratio of the surface elements before and after plasma irradiation of Si 3 N 4 .
【００３９】[0039]
【表２】 [Table 2]
【００４０】[0040]
【表３】 [Table 3]
【００４１】表２から明らかなように、プラスマ照射前
後において、Ａｌ成分は１６％から１２％に減少してい
るのに対し、Ｙ成分は１２％から２０％に増加し、Ｆ成
分は２％から４７％に増加している。As is apparent from Table 2, before and after plasma irradiation, the Al component decreased from 16% to 12%, the Y component increased from 12% to 20%, and the F component increased by 2%. To 47%.
【００４２】すなわち、ＡｌＦ3はＹＦ3に比べて蒸気圧
が高く処理室内の圧力との圧力差が小さくなり、その結
果表層面のＡｌＦ3が固体微粒子となって飛散し、Ａｌ
成分の減少を招いている。That is, AlF 3 has a higher vapor pressure than YF 3 and a smaller pressure difference from the pressure in the processing chamber. As a result, AlF 3 on the surface layer scatters as solid fine particles, and AlF 3 scatters.
This leads to a decrease in components.
【００４３】これに対し、ＹＦ3はＡｌＦ3に比べて蒸気
圧が低く、処理室内との圧力差も十分にあるため、表層
面のＹＦ3は固体微粒子として飛散することなく残存
し、その結果、Ｙ成分及びＦ成分はプラズマ照射後にお
いて増加している。On the other hand, since YF 3 has a lower vapor pressure than AlF 3 and a sufficient pressure difference from the processing chamber, YF 3 on the surface layer remains without scattering as solid fine particles. , Y component and F component increase after plasma irradiation.
【００４４】また、表３においてもプラズマ照射前後で
Ｙ成分は２％から８％に増加しており、Ｆ成分も８％か
ら４６％に増加しており、ＹＦ3が試験片の表層面から
脱落することなく残存していることが分かる。Also in Table 3, before and after the plasma irradiation, the Y component increased from 2% to 8%, the F component also increased from 8% to 46%, and YF 3 increased from the surface of the test piece. It can be seen that it remains without falling off.
【００４５】すなわち、ＹＦ3の蒸気圧と処理室の圧力
との間には十分な圧力差があり、ＹＦ3はプラズマ雰囲
気中を固体微粒子となって飛散することなく試験片の表
層面に残存していることが確認された。That is, there is a sufficient pressure difference between the vapor pressure of YF 3 and the pressure of the processing chamber, and YF 3 remains on the surface of the test piece without being scattered as solid fine particles in the plasma atmosphere. It was confirmed that.
【００４６】〔第２の実施例〕本発明者らは、ＹＦ3、
Ｙ2Ｏ3、及びＳｉＯ2の３種類の各材料について、縦２
０ｍｍ、横２０ｍｍ、厚さ２ｍｍの試験片を作製し、図
２に示すように、該試験片の外周部３０をポリイミドフ
ィルム（デュポン社、登録商標「カプトン」）でマスク
し、中央部３１に縦１０ｍｍ、横１０ｍｍの照射面を設
け、下記の放電条件でもってプラズマを照射し、表面粗
度計でＸ軸方向及びＹ軸方向の削れ量を計測した。 〔放電条件〕 高周波電力：１４００Ｗ 電源周波数：２７．１２ＭＨｚ 処理室の圧力：５．３２Ｐａ（４０ｍTorr） 反応ガス種：ＣＦ4 ／Ａｒ／Ｏ2 運転時間：２０時間 表４は測定結果を示し、図３は各種試験片の削れ量の平
均値を棒グラフで示している。[Second Embodiment] The present inventors have proposed YF 3 ,
For each of the three types of materials Y 2 O 3 and SiO 2 ,
A test piece having a thickness of 0 mm, a width of 20 mm, and a thickness of 2 mm was prepared. As shown in FIG. 2, an outer peripheral portion 30 of the test piece was masked with a polyimide film (Dupont, registered trademark “Kapton”). An irradiation surface having a length of 10 mm and a width of 10 mm was provided, plasma was irradiated under the following discharge conditions, and the shaving amount in the X-axis direction and the Y-axis direction was measured with a surface roughness meter. [Discharge conditions] High-frequency power: 1400 W Power supply frequency: 27.12 MHz Processing chamber pressure: 5.32 Pa (40 mTorr) Reactive gas type: CF 4 / Ar / O 2 Operating time: 20 hours Table 4 shows the measurement results, and FIG. 3 shows a bar graph of the average value of the amount of shaving of each test piece.
【００４７】[0047]
【表４】 [Table 4]
【００４８】この表４及び図３から明らかなように、Ｓ
ｉＯ2は耐プラズマ性に劣るため削れ量が大きいのに対
し、ＹＦ3は、耐プラズマ性に優れているとされるＹ2Ｏ
3と同等以上の耐プラズマ性を有しており、削れ量も少
なく耐久性に優れていることが確認された。As is apparent from Table 4 and FIG.
While iO 2 is inferior in plasma resistance, the shaving amount is large, whereas YF 3 is Y 2 O, which is considered to have excellent plasma resistance.
It was confirmed that it had plasma resistance equal to or higher than that of 3, and had a small amount of scraping and excellent durability.
【００４９】[0049]
【発明の効果】以上詳述したように本発明に係るプラズ
マエッチング装置は、被処理物にドライエッチング処理
を施して該被処理物の表面を微細加工するプラズマエッ
チング装置において、装置本体の内部に配設されている
耐プラズマ性部材は、少なくとも表面がフッ化イットリ
ウムで形成されているので、耐プラズマ性部材の表面は
処理ガス（ＣＦ系ガス）に対して化学的に安定したもの
となり、固体微粒子の飛散が抑制され、耐プラズマ性部
材の消耗を低減させることができ耐久性向上を図ること
ができる。As described above in detail, the plasma etching apparatus according to the present invention is a plasma etching apparatus which performs dry etching on an object to be processed to finely process the surface of the object. Since at least the surface of the provided plasma-resistant member is formed of yttrium fluoride, the surface of the plasma-resistant member becomes chemically stable with respect to the processing gas (CF-based gas), The scattering of the fine particles is suppressed, the consumption of the plasma resistant member can be reduced, and the durability can be improved.
【００５０】また、前記耐プラズマ性部材は、素材表面
にフッ化イットリウムを溶射して形成することができ、
またフッ化イットリウムの焼結体で形成することもで
き、いずれの方法で形成しても上記効果を容易に奏する
ことができる。The plasma-resistant member can be formed by spraying yttrium fluoride on the surface of the material.
Further, it can be formed of a sintered body of yttrium fluoride, and the above-described effects can be easily obtained by any method.
【図１】本発明に係るプラズマエッチング装置の一実施
の形態を示す内部構造図である。FIG. 1 is an internal structural view showing one embodiment of a plasma etching apparatus according to the present invention.
【図２】本発明の実施例の削れ量の測定方法を説明する
ための図である。FIG. 2 is a diagram for explaining a method of measuring a shaving amount according to an embodiment of the present invention.
【図３】本発明実施例の削れ量を比較例と共に示した棒
グラフである。FIG. 3 is a bar graph showing the shaving amount of an example of the present invention together with a comparative example.
３ 半導体ウエハ（被処理物） １２ バッフル板（耐プラズマ性部材） １３ 絶縁リング（耐プラズマ性部材） １４ 第１のベローズカバー（耐プラズマ性部材） １５ 第２のベローズカバー（耐プラズマ性部材） Reference Signs List 3 semiconductor wafer (object to be processed) 12 baffle plate (plasma resistant member) 13 insulating ring (plasma resistant member) 14 first bellows cover (plasma resistant member) 15 second bellows cover (plasma resistant member)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中山 博之 山梨県韮崎市藤井町北下条2381番地の１ 東京エレクトロン山梨株式会社内 Ｆターム(参考） 4K031 AA08 AB02 AB09 CB50 5F004 AA15 BA04 BB28 BB29 CA05 ────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Hiroyuki Nakayama 2381, Kita-Shimojo, Fujii-machi, Nirasaki-shi, Yamanashi Prefecture F-term in Tokyo Electron Yamanashi Co., Ltd. 4K031 AA08 AB02 AB09 CB50 5F004 AA15 BA04 BB28 BB29 CA05
Claims (3)
て該被処理物の表面を微細加工するプラズマエッチング
装置において、 処理室内に配設されている耐プラズマ性部材は、少なく
とも表面がフッ化イットリウムで形成されていることを
特徴とするプラズマエッチング装置。1. A plasma etching apparatus for subjecting an object to be subjected to dry etching to finely process the surface of the object, wherein at least the surface of the plasma-resistant member provided in the processing chamber has a surface of yttrium fluoride. A plasma etching apparatus characterized by being formed by:
ッ化イットリウムが溶射されて形成されていることを特
徴とする請求項１記載のプラズマエッチング装置。2. The plasma etching apparatus according to claim 1, wherein the plasma-resistant member is formed by spraying yttrium fluoride on a surface of a material.
リウムの焼結体で形成されていることを特徴とする請求
項１記載のプラズマエッチング装置。3. The plasma etching apparatus according to claim 1, wherein the plasma-resistant member is formed of a sintered body of yttrium fluoride.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001047278A JP2002252209A (en) | 2001-02-22 | 2001-02-22 | Plasma etching apparatus |
| PCT/JP2002/001526 WO2002067311A1 (en) | 2001-02-22 | 2002-02-21 | Plasma processing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001047278A JP2002252209A (en) | 2001-02-22 | 2001-02-22 | Plasma etching apparatus |
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| Publication Number | Publication Date |
|---|---|
| JP2002252209A true JP2002252209A (en) | 2002-09-06 |
| JP2002252209A5 JP2002252209A5 (en) | 2008-04-03 |
Family
ID=18908741
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| JP (1) | JP2002252209A (en) |
| WO (1) | WO2002067311A1 (en) |
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| JP2007308794A (en) * | 2006-04-20 | 2007-11-29 | Shin Etsu Chem Co Ltd | Conductive, plasma-resistant member |
| JP2007197835A (en) * | 2007-02-26 | 2007-08-09 | Tocalo Co Ltd | Halogen gas-resistant member for semiconductor working apparatus |
| JP4512603B2 (en) * | 2007-02-26 | 2010-07-28 | トーカロ株式会社 | Halogen gas resistant semiconductor processing equipment components |
| JP2009174000A (en) * | 2008-01-24 | 2009-08-06 | Shin Etsu Chem Co Ltd | Ceramic-sprayed member, method for producing the same, and polishing medium for ceramic-sprayed member |
| JP4591722B2 (en) * | 2008-01-24 | 2010-12-01 | 信越化学工業株式会社 | Manufacturing method of ceramic sprayed member |
| JP2013122086A (en) * | 2011-11-10 | 2013-06-20 | Shin-Etsu Chemical Co Ltd | Rare earth element fluoride spray powder and rare earth element fluoride-sprayed article |
| US8896210B2 (en) | 2011-12-05 | 2014-11-25 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US9238863B2 (en) | 2012-02-03 | 2016-01-19 | Tocalo Co., Ltd. | Method for blackening white fluoride spray coating, and fluoride spray coating covered member having a blackened layer on its surface |
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| WO2002067311A1 (en) | 2002-08-29 |
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