TW200504816A - Process kit for erosion resistance enhancement - Google Patents

Process kit for erosion resistance enhancement

Info

Publication number
TW200504816A
TW200504816A TW093122031A TW93122031A TW200504816A TW 200504816 A TW200504816 A TW 200504816A TW 093122031 A TW093122031 A TW 093122031A TW 93122031 A TW93122031 A TW 93122031A TW 200504816 A TW200504816 A TW 200504816A
Authority
TW
Taiwan
Prior art keywords
process kit
polymer material
plasma
layer
erosion resistance
Prior art date
Application number
TW093122031A
Other languages
Chinese (zh)
Inventor
Jennifer Y Sun
Ananda H Kumar
Senh Thach
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200504816A publication Critical patent/TW200504816A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Abstract

A process kit is described that resists plasma erosion, preserves the spatial uniformity of plasma properties, reduces particle generation in the chamber, and significantly enhances the lifetime of the process kit. A layer of polymer material covers the top surface of the process kit. The polymer material is fluorocarbon-based and not reactive with the species in the plasma. The polymer material not only protects the process kit from progressive erosion, but also prevents the generation of particles in the chamber. The polymer material has similar permittivity to that of the process kit and therefore maintains the spatial uniformity of plasma properties, e.g. Etch rate, near the wafer perimeter. The thickness of the layer is controlled between 0.5 and 1.5 mm such that the difference between its coefficient of thermal expansion and that of the process kit will not cause the layer to peel off the process kit's top surface.
TW093122031A 2003-07-25 2004-07-23 Process kit for erosion resistance enhancement TW200504816A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/627,213 US20050016684A1 (en) 2003-07-25 2003-07-25 Process kit for erosion resistance enhancement

Publications (1)

Publication Number Publication Date
TW200504816A true TW200504816A (en) 2005-02-01

Family

ID=34080593

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093122031A TW200504816A (en) 2003-07-25 2004-07-23 Process kit for erosion resistance enhancement

Country Status (4)

Country Link
US (1) US20050016684A1 (en)
KR (1) KR20050012694A (en)
CN (1) CN1577765A (en)
TW (1) TW200504816A (en)

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US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
KR100578129B1 (en) * 2003-09-19 2006-05-10 삼성전자주식회사 Plasma Etching Machine
US7632375B2 (en) * 2004-12-30 2009-12-15 Lam Research Corporation Electrically enhancing the confinement of plasma
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US8475625B2 (en) * 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US20080029032A1 (en) * 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
US7718559B2 (en) 2007-04-20 2010-05-18 Applied Materials, Inc. Erosion resistance enhanced quartz used in plasma etch chamber
US8066895B2 (en) * 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US8409355B2 (en) * 2008-04-24 2013-04-02 Applied Materials, Inc. Low profile process kit
CN102017077B (en) 2008-05-02 2012-09-19 应用材料公司 Process kit for RF physical vapor deposition
CN101643895B (en) * 2008-08-04 2011-03-23 中芯国际集成电路制造(北京)有限公司 Plasma reaction chamber pretreatment method
EP2180768A1 (en) * 2008-10-23 2010-04-28 TNO Nederlandse Organisatie voor Toegepast Wetenschappelijk Onderzoek Apparatus and method for treating an object
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US9711334B2 (en) * 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) * 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
JP6094813B2 (en) 2013-09-02 2017-03-15 パナソニックＩｐマネジメント株式会社 Plasma processing equipment
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP6501146B2 (en) 2014-03-18 2019-04-17 パナソニックＩｐマネジメント株式会社 Neural network circuit and learning method thereof
GB201518756D0 (en) * 2015-10-22 2015-12-09 Spts Technologies Ltd Apparatus for plasma dicing
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US20190301012A1 (en) * 2018-04-02 2019-10-03 Veeco Instruments Inc. Wafer processing system with flow extender
JP7357513B2 (en) * 2019-11-12 2023-10-06 東京エレクトロン株式会社 plasma processing equipment
US11566324B2 (en) 2020-02-27 2023-01-31 Applied Materials, Inc. Conditioning treatment for ALD productivity
CN111319324B (en) * 2020-03-17 2022-05-20 李珮豪 Composite material for cooker, stainless steel cooker and preparation method of stainless steel cooker
US20240018648A1 (en) * 2022-07-14 2024-01-18 Applied Materials, Inc. Purge Ring for Reduced Substrate Backside Deposition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174994A (en) * 1976-11-05 1979-11-20 Savelkouls Leonardus J Apparatus for metal coatings
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
KR100258984B1 (en) * 1997-12-24 2000-08-01 윤종용 Dry etching apparatus
US6123791A (en) * 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof

Also Published As

Publication number Publication date
US20050016684A1 (en) 2005-01-27
CN1577765A (en) 2005-02-09
KR20050012694A (en) 2005-02-02

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