AU2003290815A1 - Atomic layer deposition methods - Google Patents

Atomic layer deposition methods

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Publication number
AU2003290815A1
AU2003290815A1 AU2003290815A AU2003290815A AU2003290815A1 AU 2003290815 A1 AU2003290815 A1 AU 2003290815A1 AU 2003290815 A AU2003290815 A AU 2003290815A AU 2003290815 A AU2003290815 A AU 2003290815A AU 2003290815 A1 AU2003290815 A1 AU 2003290815A1
Authority
AU
Australia
Prior art keywords
monolayer
substrate
precursor
composition
layer deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003290815A
Other versions
AU2003290815A8 (en
Inventor
Guy T. Blalock
Trung Tri Doan
Gurtej S. Sandhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2003290815A1 publication Critical patent/AU2003290815A1/en
Publication of AU2003290815A8 publication Critical patent/AU2003290815A8/en
Abandoned legal-status Critical Current

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/38—Borides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.
AU2003290815A 2002-11-12 2003-11-12 Atomic layer deposition methods Abandoned AU2003290815A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/293,072 2002-11-12
US10/293,072 US7022605B2 (en) 2002-11-12 2002-11-12 Atomic layer deposition methods
PCT/US2003/036223 WO2004044963A2 (en) 2002-11-12 2003-11-12 Atomic layer deposition methods

Publications (2)

Publication Number Publication Date
AU2003290815A1 true AU2003290815A1 (en) 2004-06-03
AU2003290815A8 AU2003290815A8 (en) 2004-06-03

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AU2003290815A Abandoned AU2003290815A1 (en) 2002-11-12 2003-11-12 Atomic layer deposition methods

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US (4) US7022605B2 (en)
EP (1) EP1561239B1 (en)
JP (1) JP2006505696A (en)
KR (3) KR100704086B1 (en)
CN (1) CN100483636C (en)
AT (1) ATE507579T1 (en)
AU (1) AU2003290815A1 (en)
DE (1) DE60336920D1 (en)
TW (1) TWI257438B (en)
WO (1) WO2004044963A2 (en)

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US7022605B2 (en) * 2002-11-12 2006-04-04 Micron Technology, Inc. Atomic layer deposition methods
US7097782B2 (en) * 2002-11-12 2006-08-29 Micron Technology, Inc. Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly
ATE546824T1 (en) * 2004-06-08 2012-03-15 Dichroic Cell S R L SYSTEM FOR PLASMA-ASSISTED CHEMICAL VAPOR DEPOSION AT LOW ENERGY
KR100589062B1 (en) * 2004-06-10 2006-06-12 삼성전자주식회사 Method of forming a thin film using an atomic layer deposition process and method of forming a capacitor of a semiconductor device using the same
US20050276922A1 (en) * 2004-06-10 2005-12-15 Henry Bernhardt Method of forming thin dielectric layers
JP4515191B2 (en) * 2004-08-03 2010-07-28 東京エレクトロン株式会社 Deposition method
KR100653705B1 (en) * 2004-10-13 2006-12-04 삼성전자주식회사 Method of forming a thin film by atomic layer deposition
KR100714269B1 (en) * 2004-10-14 2007-05-02 삼성전자주식회사 Method for forming metal layer used the manufacturing semiconductor device
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