JP2002241121A5 - - Google Patents

Download PDF

Info

Publication number
JP2002241121A5
JP2002241121A5 JP2001200895A JP2001200895A JP2002241121A5 JP 2002241121 A5 JP2002241121 A5 JP 2002241121A5 JP 2001200895 A JP2001200895 A JP 2001200895A JP 2001200895 A JP2001200895 A JP 2001200895A JP 2002241121 A5 JP2002241121 A5 JP 2002241121A5
Authority
JP
Japan
Prior art keywords
substrate
solution
silicon
structure according
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001200895A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002241121A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001200895A priority Critical patent/JP2002241121A/ja
Priority claimed from JP2001200895A external-priority patent/JP2002241121A/ja
Priority to US09/910,886 priority patent/US20020041932A1/en
Publication of JP2002241121A publication Critical patent/JP2002241121A/ja
Publication of JP2002241121A5 publication Critical patent/JP2002241121A5/ja
Pending legal-status Critical Current

Links

JP2001200895A 2000-07-25 2001-07-02 細孔を有する構造体の製造方法 Pending JP2002241121A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001200895A JP2002241121A (ja) 2000-07-25 2001-07-02 細孔を有する構造体の製造方法
US09/910,886 US20020041932A1 (en) 2000-07-25 2001-07-24 Method of preparing porous materials

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000223642 2000-07-25
JP2000-223642 2000-07-25
JP2000-382545 2000-12-15
JP2000382545 2000-12-15
JP2001200895A JP2002241121A (ja) 2000-07-25 2001-07-02 細孔を有する構造体の製造方法

Publications (2)

Publication Number Publication Date
JP2002241121A JP2002241121A (ja) 2002-08-28
JP2002241121A5 true JP2002241121A5 (enExample) 2004-11-25

Family

ID=27344159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001200895A Pending JP2002241121A (ja) 2000-07-25 2001-07-02 細孔を有する構造体の製造方法

Country Status (2)

Country Link
US (1) US20020041932A1 (enExample)
JP (1) JP2002241121A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060110424A1 (en) * 2000-03-24 2006-05-25 Lyles Mark B Ceramic and metal compositions
JP4497863B2 (ja) * 2002-08-09 2010-07-07 キヤノン株式会社 金属酸化物を含有する膜及びその製造方法
US7618703B2 (en) * 2003-08-08 2009-11-17 Canon Kabushiki Kaisha Mesostructured film, mesoporous material film, and production methods for the same
EP1689824B1 (en) * 2003-11-21 2016-10-12 BrisMat Inc. Silica films and method of production thereof
US8734906B2 (en) * 2003-11-21 2014-05-27 Brismat Inc. Films and method of production thereof
US7642199B2 (en) * 2004-11-22 2010-01-05 Xerocoat Inc. Silica and silica-like films and method of production
JP4708861B2 (ja) * 2005-05-25 2011-06-22 キヤノン株式会社 電界効果型トランジスタの製造方法
JP4873142B2 (ja) * 2005-07-14 2012-02-08 株式会社豊田中央研究所 球状シリカ系メソ多孔体の製造方法
JP2008044825A (ja) * 2006-08-18 2008-02-28 Mitsubishi Electric Corp ナノ多孔質材料の形成方法
JP5156256B2 (ja) * 2007-04-17 2013-03-06 花王株式会社 メソポーラスシリカ膜
WO2012038457A1 (en) * 2010-09-23 2012-03-29 Nanolith Sverige Ab Manufacture of structures comprising silicon dioxide on a surface
CN102408251B (zh) * 2011-07-25 2013-03-27 重庆文理学院 一种低介电常数介孔氧化硅薄膜材料的制备方法
JP6552009B2 (ja) * 2013-12-17 2019-07-31 東京エレクトロン株式会社 基板への周期的オルガノシリケートまたは自己組織化モノレイヤのスピンオンコーティングのためのシステムおよび方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858457A (en) * 1997-09-25 1999-01-12 Sandia Corporation Process to form mesostructured films

Similar Documents

Publication Publication Date Title
JP2002241121A5 (enExample)
CN103079989B (zh) 有孔可渗透薄膜及其制备方法
JP2000223681A5 (ja) 基板の製造方法
JPH08511379A (ja) マイクロマシニングされたセンサ用懸下部材の製造方法
JP2003031650A5 (enExample)
CA2233115A1 (en) Semiconductor substrate and method of manufacturing the same
JP2008505507A5 (enExample)
CA2192630A1 (en) Fabrication process and fabrication apparatus of soi substrate
JP2002334973A5 (enExample)
CA2192631A1 (en) Fabrication Process of SOI Substrate
JP2004523896A5 (enExample)
CA2481619A1 (en) Micro-optic device and method of manufacturing same
EP2019081B1 (en) Boron doped shell for MEMS device
WO2012071940A1 (zh) 一种细线条的制备方法
JP2007196376A5 (enExample)
WO2006019633A2 (en) Formation of a self-assembled release monolayer in the vapor phase
JPH11204494A5 (enExample)
JP2004006290A5 (ja) 導電性部材の製造方法及び導電性部材
GB2458906A (en) Nanowire manufacture
CN101723312A (zh) 依赖晶面的三维限制硅纳米结构的制备方法
KR101424329B1 (ko) 실리카 나노 구조체, 그 제조방법 및 이를 이용한 식각 마스크
EP1170603A3 (en) Method of fabricating silica microstructures
JPH04286165A (ja) 微小機械及びその製造方法
JP2005053006A (ja) 微小成形体の製造方法
JP2004237430A5 (enExample)