JP2002234792A5 - - Google Patents

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Publication number
JP2002234792A5
JP2002234792A5 JP2001030363A JP2001030363A JP2002234792A5 JP 2002234792 A5 JP2002234792 A5 JP 2002234792A5 JP 2001030363 A JP2001030363 A JP 2001030363A JP 2001030363 A JP2001030363 A JP 2001030363A JP 2002234792 A5 JP2002234792 A5 JP 2002234792A5
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JP
Japan
Prior art keywords
single crystal
producing
opening area
shielding material
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001030363A
Other languages
English (en)
Japanese (ja)
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JP2002234792A (ja
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Publication date
Application filed filed Critical
Priority to JP2001030363A priority Critical patent/JP2002234792A/ja
Priority claimed from JP2001030363A external-priority patent/JP2002234792A/ja
Publication of JP2002234792A publication Critical patent/JP2002234792A/ja
Publication of JP2002234792A5 publication Critical patent/JP2002234792A5/ja
Pending legal-status Critical Current

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JP2001030363A 2001-02-07 2001-02-07 単結晶製造方法 Pending JP2002234792A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001030363A JP2002234792A (ja) 2001-02-07 2001-02-07 単結晶製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001030363A JP2002234792A (ja) 2001-02-07 2001-02-07 単結晶製造方法

Publications (2)

Publication Number Publication Date
JP2002234792A JP2002234792A (ja) 2002-08-23
JP2002234792A5 true JP2002234792A5 (ko) 2004-11-25

Family

ID=18894589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001030363A Pending JP2002234792A (ja) 2001-02-07 2001-02-07 単結晶製造方法

Country Status (1)

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JP (1) JP2002234792A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4062171B2 (ja) 2003-05-28 2008-03-19 ソニー株式会社 積層構造の製造方法
JP4687055B2 (ja) * 2004-09-29 2011-05-25 日立化成工業株式会社 単結晶の製造方法およびその装置
EP3591102B1 (en) * 2017-03-31 2024-05-22 JX Metals Corporation Compound semiconductor and method for producing single crystal of compound semiconductor
JP7046242B1 (ja) 2021-02-02 2022-04-01 Ｊｘ金属株式会社 リン化インジウム単結晶インゴットの製造方法及びリン化インジウム基板の製造方法

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