JP2002212450A - Sealing resin composition and semiconductor sealing device - Google Patents

Sealing resin composition and semiconductor sealing device

Info

Publication number
JP2002212450A
JP2002212450A JP2001012574A JP2001012574A JP2002212450A JP 2002212450 A JP2002212450 A JP 2002212450A JP 2001012574 A JP2001012574 A JP 2001012574A JP 2001012574 A JP2001012574 A JP 2001012574A JP 2002212450 A JP2002212450 A JP 2002212450A
Authority
JP
Japan
Prior art keywords
resin composition
sealing
resin
semiconductor
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001012574A
Other languages
Japanese (ja)
Inventor
Yuko Takahashi
優子 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Chemical Corp filed Critical Toshiba Chemical Corp
Priority to JP2001012574A priority Critical patent/JP2002212450A/en
Publication of JP2002212450A publication Critical patent/JP2002212450A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a sealing resin composition having sufficient flame retardancy imparted by incorporating therein a new phosphorus/nitrogen based flame retardant containing neither a halogen (chlorine or bromine) compound nor antimony trioxide, excellent in moldability, continuous producibility, and reliability, and having high whiteness, reflectance and resistance to discoloration, and a semiconductor sealing device. SOLUTION: The sealing resin composition comprises essentially (A) an inorganic filler, (B) titanium oxide, (C) a cyclophosphazene compound and (D) a thermosetting resin, with the contents of the constituents (A), (B) and (C) respectively being 30-95 wt.%, 1-40 wt.% and 0.01-5 wt.%. The semiconductor sealing device is made by sealing a semiconductor chip with the cured material of the resin composition.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体等の電子部
品の封止用樹脂組成物および半導体封止装置に関する。
更に詳しくは、白色封止材によって樹脂封止されるフォ
トカプラー等の半導体に用いられ、ハロゲン(塩素、臭
素)化合物および酸化アンチモンを添加することなしに
優れた難燃性を有し、さらに耐変色性に優れ、成形性、
高信頼性にも優れたエポキシ樹脂組成物および半導体封
止装置に関する。
The present invention relates to a resin composition for sealing electronic parts such as semiconductors and a semiconductor sealing device.
More specifically, it is used for semiconductors such as photocouplers that are resin-sealed with a white encapsulant, has excellent flame retardancy without adding a halogen (chlorine, bromine) compound and antimony oxide, and further has resistance to Excellent discoloration, moldability,
The present invention relates to an epoxy resin composition excellent in high reliability and a semiconductor encapsulation device.

【0002】[0002]

【従来の技術】半導体および電子部品は、それを外部環
境から保護するためにセラミックパッケージまたは樹脂
パッケージなどで封止されているが、この封止材料につ
いてはコスト、生産性等の面から無機質充填剤を含有さ
せた合成樹脂組成物によるものが普及している。
2. Description of the Related Art Semiconductor and electronic components are sealed with a ceramic package or a resin package in order to protect them from the external environment. However, this sealing material is not filled with an inorganic material in terms of cost and productivity. The use of a synthetic resin composition containing an agent is widespread.

【0003】半導体封止装置では、その封止用樹脂に難
燃性をもたせることが一般的であり、難燃手法として、
ハロゲン(塩素、臭素)化合物および金属酸化物を単独
もしくは併用することで難燃効果を現している。具体的
には、臭素化エポキシ樹脂と三酸化アンチモンとの組合
せが一般的である。しかし、封止用樹脂組成物の難燃効
果を現すために添加される、臭素化エポキシ樹脂および
その難燃効果を助けるために添加される金属酸化物、特
に三酸化アンチモンは、半導体封止装置の信頼性を低下
させるという欠点があった。そればかりか最近では、環
境への悪影響も指摘されている。
[0003] In a semiconductor encapsulation device, it is general that the encapsulating resin is provided with flame retardancy.
Halogen (chlorine, bromine) compounds and metal oxides alone or in combination exhibit a flame retardant effect. Specifically, a combination of a brominated epoxy resin and antimony trioxide is generally used. However, a brominated epoxy resin added to exhibit the flame retardant effect of the encapsulating resin composition, and a metal oxide added to assist the flame retardant effect, particularly antimony trioxide, are used in semiconductor encapsulation devices. However, there is a disadvantage that the reliability is lowered. More recently, it has also been pointed out that it has a negative impact on the environment.

【0004】このため、臭素化エポキシ樹脂と三酸化ア
ンチモンの代替材としてリン系難燃剤および金属水和物
の検討が広く進められている。しかし、リン系難燃剤の
多くは、被覆型のリンもしくはリン酸エステル系のもの
が多く、難燃効果が得られても、加水分解により発生す
るリン酸が半導体封止装置の耐湿信頼性を低下させる原
因となってしまい、十分な信頼性を確保することができ
ていない。特に、白色封止材においては、硬化後および
ポストキュア後の硬化物の反射率が高く、変色が少ない
ことが望ましいにもかかわらず、リン系難燃剤は樹脂を
着色しやすく使用できない。また、金属水和物について
も十分な成形性が確保できないばかりか、その吸湿性の
劣化は半導体封止装置の信頼性を著しく低下させてしま
う欠点があった。このため、成形性、信頼性に優れると
ともに、ハロゲン(塩素、臭素)化合物および三酸化ア
ンチモンを含有しない封止用樹脂の開発が強く要望され
ていた。
[0004] Therefore, phosphorus-based flame retardants and metal hydrates have been widely studied as substitutes for brominated epoxy resins and antimony trioxide. However, many of the phosphorus-based flame retardants are coated phosphorus or phosphate ester-based ones, and even if a flame-retardant effect is obtained, the phosphoric acid generated by hydrolysis reduces the moisture resistance reliability of the semiconductor encapsulation device. This causes a reduction, and sufficient reliability cannot be secured. In particular, in the case of a white encapsulant, a phosphorus-based flame retardant cannot be used because the resin is likely to be colored, although it is desirable that the cured product after curing and after post-curing have high reflectance and little discoloration. In addition, not only the metal hydrate cannot ensure sufficient formability, but also its hygroscopicity deteriorates the reliability of the semiconductor sealing device significantly. For this reason, there has been a strong demand for development of a sealing resin which is excellent in moldability and reliability and does not contain a halogen (chlorine, bromine) compound and antimony trioxide.

【0005】また、リン系難燃剤および金属酸化物によ
る難燃効果の付与は、それ単体で使用する場合に限れ
ば、多くの添加部数を必要とするために樹脂組成物の諸
特性を十分に満足させることは困難であり、本実験で使
用している添加物についても例外ではない。
[0005] In addition, when a flame retardant effect is imparted by a phosphorus-based flame retardant and a metal oxide, a large number of added parts are required if the compound is used alone, so that the properties of the resin composition are sufficiently improved. It is difficult to satisfy, and the additives used in this experiment are no exception.

【0006】また、この封止用樹脂組成物は、エポキシ
樹脂等の熱硬化性樹脂とシリカ等の無機質充填剤とから
構成されているが、これらの組成物は熱膨張係数が小さ
く、良熱伝導性、低透湿性で機械的特性に優れ、かつ保
存安定性にも優れており、しかも低コストであるものが
望ましい。特に白色封止材においては、硬化後およびポ
ストキュア後の硬化物の反射率が高く、変色が少ないこ
とが望ましい。そこで、従来解決されている特性を損な
わない白色封止材用難燃剤が求められていた。
The sealing resin composition is composed of a thermosetting resin such as an epoxy resin and an inorganic filler such as silica. However, these compositions have a small coefficient of thermal expansion and a good heat resistance. It is desirable that the conductive material, low moisture permeability, excellent mechanical properties, excellent storage stability, and low cost be used. In particular, in the case of a white sealing material, it is desirable that the cured product after curing and post-curing have high reflectance and little discoloration. Therefore, there has been a demand for a flame retardant for a white encapsulant that does not impair the characteristics conventionally solved.

【0007】[0007]

【発明が解決しようとする課題】本発明は、上記の欠点
を解消し、上記要望に応えるためになされたもので、ハ
ロゲン(塩素、臭素)化合物および三酸化アンチモンを
含有しないで十分な難燃性を付与しつつ、成形性、連続
生産性、信頼性に優れ、さらには高白色度、高反射率、
耐変色性を有する封止用樹脂組成物および半導体封止装
置を提供しようとするものである。
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned drawbacks and to meet the above-mentioned needs, and to provide a sufficient flame retardant without containing a halogen (chlorine, bromine) compound and antimony trioxide. While imparting properties, it is excellent in moldability, continuous productivity, reliability, high whiteness, high reflectance,
An object of the present invention is to provide a sealing resin composition and a semiconductor sealing device having discoloration resistance.

【0008】[0008]

【課題を解決するための手段】本発明者らは、上記の目
的を達成しようと鋭意研究を重ねた結果、後述する組成
の熱硬化性樹脂を使用することによって、上記目的が達
成されることを見いだし、本発明を完成したものであ
る。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above-mentioned object, and as a result, the use of a thermosetting resin having a composition described later has achieved the above object. The present invention has been completed.

【0009】即ち、本発明は、(A)無機質充填剤、
(B)酸化チタン、(C)シクロホスファゼン化合物お
よび(D)熱硬化性樹脂を必須成分とし、樹脂組成物に
対して、前記(A)無機質充填剤を30〜95重量%、
(B)酸化チタンを1〜40重量%、(C)シクロホス
ファゼン化合物を0.01〜5重量%の割合で含有して
なることを特徴とする封止用樹脂組成物である。またこ
の封止用樹脂組成物の硬化物によって、半導体チップを
封止してなることを特徴とする半導体封止装置である。
That is, the present invention provides (A) an inorganic filler,
(B) titanium oxide, (C) a cyclophosphazene compound and (D) a thermosetting resin as essential components, and (A) the inorganic filler in an amount of 30 to 95% by weight based on the resin composition;
A sealing resin composition comprising (B) 1 to 40% by weight of titanium oxide and (C) 0.01 to 5% by weight of a cyclophosphazene compound. Further, there is provided a semiconductor encapsulating apparatus characterized in that a semiconductor chip is encapsulated with a cured product of the encapsulating resin composition.

【0010】以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.

【0011】本発明の樹脂組成物は、無機質充填剤、酸
化チタンおよびシクロホスファゼン化合物を熱硬化性樹
脂に配合させたものである。本発明の(D)成分は熱硬
化性樹脂であって、特にエポキシ樹脂とその硬化剤から
なる。
The resin composition of the present invention is obtained by blending an inorganic filler, titanium oxide and a cyclophosphazene compound with a thermosetting resin. The component (D) of the present invention is a thermosetting resin, and particularly comprises an epoxy resin and its curing agent.

【0012】本発明に用いる(A)無機質充填剤として
は、シリカ、炭酸カルシウム、アルミナといった無機化
合物等の微粉末が挙げられ、これらは単独又は2種以上
混合して使用することができる。無機質充填剤の配合割
合は、全体の樹脂組成物に対して30〜90重量%含有
することが望ましい。この割合が30重量%未満では成
形品の吸湿性が高く、半田浸漬後の耐湿性に劣り、90
重量%を超えると極端に成形材料の流動性、成形性が悪
くなり好ましくない。
Examples of the inorganic filler (A) used in the present invention include fine powders of inorganic compounds such as silica, calcium carbonate, and alumina. These can be used alone or in combination of two or more. The mixing ratio of the inorganic filler is desirably 30 to 90% by weight based on the entire resin composition. If this ratio is less than 30% by weight, the molded article has high moisture absorption, is inferior in moisture resistance after solder immersion, and
Exceeding the weight percentage is undesirable because the fluidity and moldability of the molding material are extremely deteriorated.

【0013】本発明に用いる(B)酸化チタンとして
は、不純物濃度が低い酸化チタンが用いられ、その結晶
形はアナタース形、ルチル形のいずれでもよい。酸化チ
タンの配合割合は、全体の樹脂組成物に対して1〜40
重量%含有することが望ましい。この割合が1重量%未
満では白色度が十分でなく、40重量%をを超えると半
導体装置の特性を損うおそれがある。
As the titanium oxide (B) used in the present invention, titanium oxide having a low impurity concentration is used, and its crystal form may be any of anatase type and rutile type. The mixing ratio of titanium oxide is 1 to 40 with respect to the entire resin composition.
Desirably, it is contained by weight. If this ratio is less than 1% by weight, the whiteness is not sufficient, and if it exceeds 40% by weight, the characteristics of the semiconductor device may be impaired.

【0014】本発明に用いる(C)シクロホスファゼン
化合物は、次の構造式に示されるものである。
The (C) cyclophosphazene compound used in the present invention is represented by the following structural formula.

【0015】[0015]

【化1】 (但し、式中、R1 、R2 は、同じでも異なってもよ
く、アルコキシ基、フェノキシ基、アミノ基、アリル基
等有機基であって特に限定されず、nは3〜10の整数
を表す) これらシクロホスファゼン化合物は単独又は2種以上混
合して使用することができる。具体的な化合物として
は、例えば、
Embedded image (However, in the formula, R 1 and R 2 may be the same or different, and are not particularly limited because they are organic groups such as an alkoxy group, a phenoxy group, an amino group, an allyl group, and n is an integer of 3 to 10. These cyclophosphazene compounds can be used alone or in combination of two or more. Specific compounds include, for example,

【化2】 (但し、式中、nは、3〜4の整数を表す)上記シクロ
ホスファゼン化合物の配合割合は、全体の樹脂組成物に
対して、0.05〜1重量%、好ましくは0.1〜0.
5重量%の割合で含有するように調整することが望まし
い。0.05重量%未満では、十分な難燃性の効果が得
られず、また、1重量%を超えると成形性、耐湿性等が
悪くなり実用に適さない。
Embedded image (Wherein, n represents an integer of 3 to 4) The compounding ratio of the cyclophosphazene compound is 0.05 to 1% by weight, preferably 0.1 to 0% by weight, based on the whole resin composition. .
It is desirable to adjust so that the content is 5% by weight. If it is less than 0.05% by weight, sufficient flame retardant effect cannot be obtained, and if it exceeds 1% by weight, moldability, moisture resistance and the like are deteriorated, which is not suitable for practical use.

【0016】本発明に用いる(D)熱硬化性樹脂として
は、例えば、ユリア樹脂、メラミン樹脂、フェノール樹
脂、レゾルシノール樹脂、エポキシ樹脂、ポリウレタン
樹脂、酢酸ビニル樹脂、ポリビニルアルコール樹脂、ア
クリル樹脂、ビニルウレタン樹脂、シリコーン樹脂、α
−オレフィン無水マレイン酸樹脂、ポリアミド樹脂、ポ
リイミド樹脂等が挙げられ、これらは、単独もしくは2
種以上混合して用いることができるが、このなかで、エ
ポキシ樹脂が工業的に有利に用いることができる。熱硬
化性樹脂の配合割合は、全体の樹脂組成物に対して5〜
50重量%含有することが望ましい。これら熱硬化性樹
脂の配合量には、それぞれの硬化剤、触媒の配合量が含
まれる。
As the thermosetting resin (D) used in the present invention, for example, urea resin, melamine resin, phenol resin, resorcinol resin, epoxy resin, polyurethane resin, vinyl acetate resin, polyvinyl alcohol resin, acrylic resin, vinyl urethane Resin, silicone resin, α
-Olefin maleic anhydride resin, polyamide resin, polyimide resin and the like, and these may be used alone or
A mixture of more than two kinds can be used, and among them, epoxy resins can be used industrially advantageously. The compounding ratio of the thermosetting resin is 5 to the entire resin composition.
It is desirable to contain 50% by weight. The compounding amounts of these thermosetting resins include the compounding amounts of the respective curing agents and catalysts.

【0017】本発明において、熱硬化性樹脂組成物は、
上述した無機質充填剤、酸化チタン、シクロホスファゼ
ン化合物および熱硬化性樹脂を必須成分とするが、本発
明の目的に反しない限度において、また必要に応じて、
粘度調整用の溶剤、カップリング剤その他の添加剤を適
宜、添加配合することができる。その溶剤としては、ジ
オキサン、ソルベントナフサ、工業用ガソリン、酢酸セ
ロソルブ、エチルセロソルブ、ブチルセロソルブアセテ
ート、ブチルカルビトールアセテート、ジメチルホルム
アミド、ジメチルアセトアミド、N−メチルピロリドン
等が挙げられ、これらは単独又は2種以上混合して使用
することができる。
In the present invention, the thermosetting resin composition comprises
The above-mentioned inorganic filler, titanium oxide, a cyclophosphazene compound and a thermosetting resin are used as essential components, but as long as the object of the present invention is not contradicted, and if necessary,
A solvent for adjusting viscosity, a coupling agent and other additives can be appropriately added and blended. Examples of the solvent include dioxane, solvent naphtha, industrial gasoline, cellosolve acetate, ethyl cellosolve, butyl cellosolve acetate, butyl carbitol acetate, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, and the like. It can be mixed and used.

【0018】本発明の封止用樹脂組成物を成形材料とし
て調製する場合の一般的な方法としては、前述の熱硬化
性樹脂に無機充填剤、酸化チタン、シクロホスファゼン
化合物および添加剤などを配合し、通常、ニーダ、ロー
ルミル、ミキサー等を用いて、常法により加熱混練を行
い冷却し、次いで適当な大きさに粉砕して成形材料とす
ることができる。こうして得られた成形材料は、半導体
装置をはじめとする電子部品あるいは電気部品の封止、
被覆、絶縁等に適用すれば、優れた特性と信頼性を付与
させることができる。
As a general method for preparing the encapsulating resin composition of the present invention as a molding material, an inorganic filler, titanium oxide, a cyclophosphazene compound, additives and the like are mixed with the above-mentioned thermosetting resin. Usually, the mixture is heated and kneaded using a kneader, a roll mill, a mixer, or the like in a usual manner, cooled, and then pulverized to an appropriate size to obtain a molding material. The molding material thus obtained is used for encapsulation of electronic components or electric components including semiconductor devices,
When applied to coating, insulation and the like, excellent characteristics and reliability can be imparted.

【0019】本発明の半導体封止装置は、上記のように
して得られた封止用樹脂を用いて、半導体チップを封止
することにより容易に製造することができる。封止を行
う半導体装置としては、例えば集積回路、大規模集積回
路、トランジスタ、サイリスタ、ダイオード等で特に限
定されるものではない。しかし、特に白色封止材を用い
る光回路に対し有効である。封止の最も一般的な方法と
しては、低圧トランスファー成形法があるが、射出成
形、圧縮成形、注型等による封止も可能である。封止用
樹脂組成物を封止の際に加熱して硬化させ、最終的には
この組成物の硬化物によって封止された半導体封止装置
が得られる。加熱による硬化は、150℃以上に加熱し
て硬化させることが望ましい。
The semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the sealing resin obtained as described above. The semiconductor device for sealing is not particularly limited, for example, with an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like. However, it is particularly effective for an optical circuit using a white sealing material. The most common sealing method is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. The sealing resin composition is heated and cured at the time of sealing, and finally a semiconductor sealing device sealed with a cured product of this composition is obtained. Curing by heating is desirably performed by heating to 150 ° C. or higher.

【0020】[0020]

【作用】本発明の封止用樹脂組成物および半導体封止装
置は、樹脂成分と充填剤成分に加えて酸化チタンと、シ
クロホスファゼン化合物を用いたことによって、目的と
する特性が得られるものである。即ち、充填性や作業性
が良く、樹脂硬化物の外観や耐変色性の著しく向上した
半導体等の電子部品を成形することができる。
The encapsulating resin composition and the semiconductor encapsulating apparatus of the present invention can obtain desired properties by using titanium oxide and a cyclophosphazene compound in addition to the resin component and the filler component. is there. That is, it is possible to mold an electronic component such as a semiconductor having a good filling property and workability, and significantly improved appearance and discoloration resistance of the cured resin.

【0021】[0021]

【発明の実施の形態】次に本発明を実施例によって具体
的に説明するが、本発明はこれらの実施例によって限定
されるものではない。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described specifically with reference to examples, but the present invention is not limited to these examples.

【0022】実施例1 溶融シリカ充填剤(平均粒径20μm)、酸化チタン充
填剤と、前記化2に示したシクロホスファゼン化合物
(融点100℃)と、エポキシ樹脂成分を表1に示す割
合で配合し、ロールミルにて混練してこれを冷却粉砕し
てエポキシ樹脂組成物1,2を製造した。
Example 1 A fused silica filler (average particle size: 20 μm), a titanium oxide filler, a cyclophosphazene compound represented by the formula (2) (melting point: 100 ° C.), and an epoxy resin component were blended in the proportions shown in Table 1. Then, the mixture was kneaded with a roll mill and cooled and pulverized to produce epoxy resin compositions 1 and 2.

【0023】比較例1 同様に、溶融シリカ充填剤、酸化チタン充填剤と、エポ
キシ樹脂成分を表1に示す割合で配合し、ロールミルに
て混練してこれを冷却粉砕してエポキシ樹脂組成物3,
4を製造した。
Comparative Example 1 Similarly, a fused silica filler, a titanium oxide filler, and an epoxy resin component were blended in the proportions shown in Table 1, kneaded by a roll mill, and cooled and pulverized to obtain an epoxy resin composition 3. ,
4 was produced.

【0024】比較例2 同様に、溶融シリカ充填剤、酸化チタン充填剤と、臭素
化エポキシを含むエポキシ樹脂成分、三酸化アンチモン
と表1に示す割合で配合し、ロールミルにて混練してこ
れを冷却粉砕してエポキシ樹脂組成物5,6を製造し
た。
Comparative Example 2 Similarly, a fused silica filler, a titanium oxide filler, an epoxy resin component containing a brominated epoxy, and antimony trioxide were blended in the proportions shown in Table 1 and kneaded with a roll mill. The resultant was cooled and pulverized to produce epoxy resin compositions 5 and 6.

【0025】実施例1および比較例1〜2で得たエポキ
シ樹脂組成物の流動性をみるために、高化式フロー粘度
および800nmの光反射率等を測定して、その結果を
表1にそれぞれ示した。また、UL94試験を行ってそ
の結果も表1に示した。
In order to check the fluidity of the epoxy resin compositions obtained in Example 1 and Comparative Examples 1 and 2, the flow viscosity and light reflectance at 800 nm were measured, and the results are shown in Table 1. Each is shown. Table 1 also shows the results of the UL94 test.

【0026】これらの結果から、実施例1の樹脂組成物
1,2は、比較例1〜2の樹脂組成物3,4の樹脂組成
物と同様の流動性をもち、ポストキュア後の耐変色性に
優れていることが確認された。一方、難燃性について実
施例1の樹脂組成物は、比較例1〜2と同様のV−0を
保持した。
From these results, the resin compositions 1 and 2 of Example 1 have the same fluidity as the resin compositions of the resin compositions 3 and 4 of Comparative Examples 1 and 2, and the discoloration resistance after post-curing. It was confirmed that the film had excellent properties. On the other hand, the flame retardancy of the resin composition of Example 1 maintained V-0 similar to that of Comparative Examples 1 and 2.

【0027】[0027]

【表1】 *1:クレゾールノボラックエポキシ樹脂(軟化点80
℃、エポキシ当量200)とノボラックフェノール樹脂
(軟化点80℃、水酸基当量105)を等量配合、有機
リン系触媒(トリフェニルホスフィン、樹脂中0.1
%)を含む *2:テトラブロモビスフェノールA型エポキシ樹脂
(エポキシ当量400) *3:島津フローテスターCFT−500型により17
5℃、荷重10kgの条件で測定した *4:175℃×2分硬化条件で成形した成形品表面
を、日本分光社製、紫外可視分光光度計V−530型に
より測定した *5:*4の成形品を175℃×8時間のポストキュア
をし、そのポストキュア成形品表面について測定した。
[Table 1] * 1: Cresol novolak epoxy resin (softening point 80
C., an epoxy equivalent of 200) and a novolak phenol resin (softening point of 80 ° C., hydroxyl equivalent of 105) in an equal amount, and an organic phosphorus catalyst (triphenylphosphine, 0.1% in the resin).
* 2: Tetrabromobisphenol A type epoxy resin (epoxy equivalent: 400) * 3: 17 by Shimadzu Flow Tester CFT-500
* 4: Measured under the conditions of 5 ° C. and a load of 10 kg. * 4: The surface of the molded article molded under the curing conditions of 175 ° C. × 2 minutes was measured with an ultraviolet-visible spectrophotometer V-530 manufactured by JASCO Corporation * 5: * 4 Was subjected to post-curing at 175 ° C. for 8 hours, and the surface of the post-cured molded product was measured.

【0028】[0028]

【発明の効果】以上の説明および表1から明らかなよう
に、本発明の無機質充填材とシクロホスファゼン化合物
を含有する封止用樹脂組成物をフォトカプラー等、半導
体類の電子部品の封止に用いることにより、白色封止材
の耐変色性のを保持したまま難燃性を保持することがで
き、環境に対する負荷も減らすことができる。
As is apparent from the above description and Table 1, the sealing resin composition containing the inorganic filler and the cyclophosphazene compound of the present invention is used for sealing electronic parts such as semiconductors such as photocouplers. By using this, the flame retardancy can be maintained while maintaining the discoloration resistance of the white sealing material, and the load on the environment can be reduced.

フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 23/29 H01L 23/30 R 23/31 Fターム(参考) 4J002 AA021 BB091 BE021 BF021 BG001 CC001 CC031 CC161 CC181 CD001 CK021 CL001 CM041 CP031 DE137 DE146 DE236 DJ016 EW158 GQ01 GQ05 4M109 AA01 BA01 CA21 EA02 EB02 EB07 EB08 EB12 EC20 GA01Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (Reference) H01L 23/29 H01L 23/30 R 23/31 F-term (Reference) 4J002 AA021 BB091 BE021 BF021 BG001 CC001 CC031 CC161 CC181 CD001 CK021 CL001 CM041 CP031 DE137 DE146 DE236 DJ016 EW158 GQ01 GQ05 4M109 AA01 BA01 CA21 EA02 EB02 EB07 EB08 EB12 EC20 GA01

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 (A)無機質充填剤、(B)酸化チタ
ン、(C)シクロホスファゼン化合物および(D)熱硬
化性樹脂を必須成分とし、樹脂組成物に対して、前記
(A)無機質充填剤を30〜95重量%、(B)酸化チ
タンを1〜40重量%、(C)シクロホスファゼン化合
物を0.01〜5重量%の割合で含有してなることを特
徴とする封止用樹脂組成物。
1. An inorganic filler (A), a titanium oxide (B), a cyclophosphazene compound (C) and a thermosetting resin (D) are essential components, and the resin composition is filled with the inorganic filler (A). A sealing resin comprising 30 to 95% by weight of an agent, (B) 1 to 40% by weight of titanium oxide, and (C) 0.01 to 5% by weight of a cyclophosphazene compound. Composition.
【請求項2】 (D)熱硬化性樹脂がエポキシ樹脂とそ
の硬化剤からなる請求項1記載の封止用樹脂組成物。
2. The sealing resin composition according to claim 1, wherein (D) the thermosetting resin comprises an epoxy resin and a curing agent thereof.
【請求項3】 請求項1または2記載の封止用樹脂組成
物の硬化物によって、半導体チップが封止されてなるこ
とを特徴とする半導体封止装置。
3. A semiconductor sealing device, wherein a semiconductor chip is sealed with a cured product of the sealing resin composition according to claim 1.
JP2001012574A 2001-01-22 2001-01-22 Sealing resin composition and semiconductor sealing device Pending JP2002212450A (en)

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* Cited by examiner, † Cited by third party
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JP2010212717A (en) * 2010-04-30 2010-09-24 Hitachi Chem Co Ltd Substrate for mounting optical semiconductor using light-reflecting thermosetting resin composition, method for manufacturing the same, and optical semiconductor device
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JP2014140070A (en) * 2014-04-14 2014-07-31 Hitachi Chemical Co Ltd Thermosetting resin composition for light reflection, optical semiconductor mounting board using the same, manufacturing method of the same and optical semiconductor device
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JP2010212717A (en) * 2010-04-30 2010-09-24 Hitachi Chem Co Ltd Substrate for mounting optical semiconductor using light-reflecting thermosetting resin composition, method for manufacturing the same, and optical semiconductor device
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US9139750B2 (en) 2011-09-02 2015-09-22 Shengyi Technology Co., Ltd. Halogen-free resin composition and method for preparation of copper clad laminate with same
JP2014132693A (en) * 2014-04-03 2014-07-17 Hitachi Chemical Co Ltd Optical semiconductor element mounting substrate and optical semiconductor device
JP2014140070A (en) * 2014-04-14 2014-07-31 Hitachi Chemical Co Ltd Thermosetting resin composition for light reflection, optical semiconductor mounting board using the same, manufacturing method of the same and optical semiconductor device
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