JP2000038516A - Sealing resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermosetting sealing resin composition which has a high fillability and workability, causes little abrasion in the apparatus at mold processing, has a high thermal conductivity and small internal stress and is suitable for transfer molding, and also provide a semiconductor device using the composition. SOLUTION: This sealing resin composition essentially comprises (A) an inorganic filler having a maximum particle size of 300 μm or smaller and an average particle size of from 5 μm to 70 μm, (B) a titanium oxide filler having a maximum particle size of 5 μm or smaller and an average particle size of from 0.05 μm to 1 μm and (C) a thermosetting resin and comprises, against the total resin composition, from 30 to 90 wt.% inorganic filler (A), from 5 to 50 wt.% titanium oxide filler (B) and from 5 to 50 wt.% thermosetting resin (C). Furthermore, a semiconductor device is prepared by resin sealing a semiconductor chip by a cured product of this sealing resin composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing resin composition for sealing electronic parts such as semiconductors, and a semiconductor device sealed with the resin composition. More specifically, the resin composition and the resin package of the semiconductor device have different particle sizes.
It is mainly composed of a thermosetting resin filled with a filler, an inorganic filler and a titanium oxide filler, and has an advantage that it has excellent thermal conductivity and has little wear of the device in a molding process.

[0002]

2. Description of the Related Art Electronic components such as semiconductors are sealed with a ceramic package or a resin package or the like in order to protect them from the external environment. A thermosetting resin composition containing an inorganic filler has been widely used.

Conventionally, this resin composition for sealing has been composed of a thermosetting resin such as an epoxy resin and an inorganic filler such as silica, and electronic components are sealed by a transfer molding method. It is desirable that these resin compositions have a small coefficient of thermal expansion, a small internal stress, good thermal conductivity, low moisture permeability, excellent mechanical properties, etc., and low cost.

[0004]

However, a resin composition using silica, alumina, silicon nitride powder or the like as a filler is excellent in thermal conductivity when formed into a resin package, but is not suitable for a molding process. It has also been reported that the above device suffers from abrasion and that the filler particles damage the surface of the semiconductor element, which causes a soft error.

[0005] In addition, a resin composition using potassium carbonate, barium sulfate, mica powder, or the like as a filler has low heat conductivity and workability, while having little wear of the apparatus in the molding process.

An object of the present invention is to provide a good filling property and workability,
Provide a thermosetting encapsulating resin composition suitable for transfer molding and a semiconductor device resin-sealed by using the thermosetting encapsulating resin composition, which has low abrasion of the device in the molding process, high thermal conductivity and low internal stress. What you want to do.

[0007]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, the combination of an inorganic filler having a large particle size and a titanium oxide filler having a small particle size has been improved. Knowing that it has more excellent properties as an agent, it has been found that a sealing resin composition and a resin-sealed semiconductor device having a composition described later using the same can achieve the above object, and completed the present invention. It is.

That is, according to the present invention, (A) the maximum particle diameter is 300
(B) a titanium oxide filler having a maximum particle diameter of 5 μm or less and an average particle diameter of 0.05 μm or more and 1 μm or less, and (C) a thermal filler. The curable resin is an essential component, and the inorganic filler of (A) is 30 to 90% by weight based on the entire resin composition,
A sealing resin composition comprising: (B) 5 to 50% by weight of a titanium oxide filler; and (C) 5 to 50% by weight of a thermosetting resin. A semiconductor device is characterized in that a semiconductor chip is resin-sealed with a cured product of the sealing resin composition.

Hereinafter, the present invention will be described in detail.

The encapsulating resin composition of the present invention is obtained by mixing a thermosetting resin with an inorganic filler having a different particle size and a titanium oxide filler.

The inorganic filler (A) used in the present invention comprises:
Used in the sealing resin composition, as long as it is an inorganic filler with few impurities, thermal conductivity, from the viewpoint of thermal expansion coefficient, crystalline silica, silicon nitride, alumina, any of aluminum nitride, or A mixture of two or more of these is desirable. This inorganic filler has a maximum particle size of 300
μm or less and an average particle diameter of 5 μm or more and 70 μm or less. The content of the inorganic filler is 30 to 90% by weight based on the whole resin composition.

The titanium oxide filler (B) used in the present invention has a maximum particle diameter of 5 μm or less and an average particle diameter of 0.05 μm or less.
It is not less than 1 μm and not more than 1 μm. Average particle size is 0.05μ
The titanium oxide filler (B) having a particle size of not less than m and not more than 1 μm has a particle diameter conventionally used for white pigments. The content of the titanium oxide filler is 5 to 50% by weight based on the whole resin composition. With such a compounding amount, the wear of the inorganic filler in the device can be reduced, and the filling property as a molding material can be enhanced to increase the thermal conductivity.

The resin composition of the present invention is obtained by mixing the above-mentioned (A) inorganic filler and (B) titanium oxide filler with (C) a thermosetting resin.

The (C) thermosetting resin used in the present invention includes, for example, urea resin, melamine resin, phenol resin, resorcinol resin, epoxy resin, polyurethane resin, vinyl acetate resin, polyvinyl alcohol resin, acrylic resin, vinyl urethane Resin, silicone resin, α
-Olefin maleic anhydride resin, polyamide resin, polyimide resin and the like, which can be used alone or as a mixture of two or more. Among them, epoxy resins can be used industrially advantageously.

The encapsulating resin composition of the present invention contains the above-mentioned inorganic filler (A) and titanium oxide filler (B) and a thermosetting resin (C) as main components. A solvent for adjusting viscosity, a coupling agent, and other additives can be blended as long as the object of the invention is not adversely affected. As the solvent, dioxane, hexane, benzene, toluene, solvent naphtha, industrial gasoline, cellosolve acetate, butyl cellosolve acetate, butyl carbitol acetate, dimethylformamide,
Examples thereof include dimethylacetamide and N-methylpyrrolidone, and these can be used alone or in combination of two or more.

The general method for preparing the encapsulating resin composition of the present invention as a molding material is as follows: (A) the inorganic filler, (B) the titanium oxide filler, the epoxy resin and its curing agent. (C) A thermosetting resin, a solvent, a coupling agent, and other additives are blended, and the mixture is heated and kneaded by a conventional method using a kneader, a roll mill, a mixer, and the like, and then pulverized to an appropriate size. Molding material.

Further, the semiconductor device of the present invention can be easily manufactured by sealing a semiconductor chip using the molding material described above. As semiconductor chips for sealing, for example, integrated circuits, large-scale integrated circuits, transistors,
It is not particularly limited by a thyristor, a diode, or the like. The most common sealing method is a low pressure transfer molding method, but sealing by injection molding, compression molding, casting, or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor device sealed with this cured product is obtained. The curing by heating is desirably performed by heating to 150 ° C. or more.

[0018]

The encapsulating resin composition of the present invention can be obtained by blending a specific amount of the inorganic filler and the titanium oxide filler having different particle diameters and the thermosetting resin in the present invention. By using this resin composition, the filling property and the workability are good, the wear of the device in the molding process is reduced, and the semiconductor device with small internal stress can be obtained by transfer molding or the like.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.

Example 1 (A) As an inorganic filler, a crystalline silica filler having a maximum particle diameter of 120 μm or less and an average particle diameter of 25 μm, and a maximum particle diameter of 1 μm and an average particle diameter of 0.2 μm (B) Titanium oxide filler and (C) an epoxy resin as a thermosetting resin were blended at a ratio shown in Table 1, kneaded in a roll mill, cooled and pulverized to obtain epoxy resin compositions 1 and 2. .

Example 2 Similarly, the maximum particle size was 90 μm or less and the average particle size was 25 μm.
And the maximum particle size used in Example 1 is
Titanium oxide filler having an average particle diameter of 0.2 μm and an epoxy resin were blended in the ratio shown in Table 1, kneaded with a roll mill, cooled and pulverized to obtain epoxy resin compositions 3, 4
I got

Example 3 Similarly, the maximum particle diameter was 150 μm or less and the average particle diameter was 30 μm.
m), a titanium oxide filler having a maximum particle diameter of 1 μm and an average particle diameter of 0.2 μm used in Example 1 and an epoxy resin in the proportions shown in Table 2, and then using a roll mill. After kneading, the mixture was cooled and pulverized to obtain epoxy resin compositions 5 and 6.

Comparative Example 1 Similarly, the crystalline silica filler used in Example 1, the alumina filler used in Example 2, the silicon nitride filler used in Example 3, and the titanium oxide used in Example 1 A filler,
The epoxy resin was blended in the ratios shown in Tables 2 and 3, kneaded in a roll mill, then cooled and pulverized to obtain an epoxy resin composition 7-1.
0 was obtained.

In order to check the fluidity of the epoxy resin compositions prepared in Examples 1 to 3 and Comparative Example 1, the flow viscosity, spiral flow, thermal conductivity, abrasion, etc. of the Koka type were measured. The results are shown in Tables 1 to 3, respectively.

The resin compositions of Examples 1 to 3 (Resin Composition Nos. 1 to 6) are the same as the resin composition of Comparative Example 1 (Resin Composition No. 7).
To 10), the resin composition was more excellent in fluidity, the viscosity of the resin composition was low even when the filler was highly filled, and the moldability and workability were excellent. In addition, comparing the samples using the same type of filler, the resin compositions of Examples 1 to 3 (resin composition numbers 1 to 6) were compared with the resin composition of Comparative Example 1 (resin composition number 7).
-10), excellent heat conductivity and less wear. As described above, the effects of the present invention were confirmed.

[0026]

[Table 1] * 1: Equal amounts of cresol novolak epoxy resin-novolak phenol resin, organophosphorus catalyst. * 2: 175 ° C, load 10kg (Shimadzu flow tester CFT-500 type). * 3: Cured at 175 ° C for 2 minutes, according to EMMI Standard 1-166. * 4: Cured at 175 ° C for 5 minutes, rapid thermal conductivity meter QTM-MD2. * 5: Hole diameter after 10 shots of an aluminum die (hole diameter φ1 mm), 175 ° C, load 50kg (Shimadzu flow tester CFT-500 type).

[0027]

[Table 2] * 1: Equal amounts of cresol novolak epoxy resin-novolak phenol resin, organophosphorus catalyst. * 2: 175 ° C, load 10kg (Shimadzu flow tester CFT-500 type). * 3: Cured at 175 ° C for 2 minutes, according to EMMI Standard 1-166. * 4: Cured at 175 ° C for 5 minutes, rapid thermal conductivity meter QTM-MD2. * 5: Hole diameter after 10 shots of an aluminum die (hole diameter φ1 mm), 175 ° C, load 50kg (Shimadzu flow tester CFT-500 type).

[0028]

[Table 3] * 1: Equal amounts of cresol novolak epoxy resin-novolak phenol resin, organophosphorus catalyst. * 2: 175 ° C, load 10kg (Shimadzu flow tester CFT-500 type). * 3: Cured at 175 ° C for 2 minutes, according to EMMI Standard 1-166. * 4: Cured at 175 ° C for 5 minutes, rapid thermal conductivity meter QTM-MD2. * 5: Hole diameter after 10 shots of an aluminum die (hole diameter φ1 mm), 175 ° C, load 50kg (Shimadzu flow tester CFT-500 type).

[0029]

By using the thermosetting resin composition of the present invention containing an inorganic filler having a different particle size and a titanium oxide filler for sealing electronic parts such as semiconductors, the fluidity in the transfer molding step can be improved. In addition, the abrasion is improved, and the thermal conductivity is also excellent, so that both workability and characteristics can be improved.

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Claims (3)

[Claims] (A) an inorganic filler having a maximum particle size of 300 μm or less and an average particle size of 5 μm or more and 70 μm or less,
(B) Maximum particle size is 5 μm or less and average particle size is 0.05 μm
The titanium oxide filler having a particle size of not less than 1 μm or less and (C) a thermosetting resin are essential components.
(A) 30 to 90% by weight of the inorganic filler, (B) 5 to 50% by weight of the titanium oxide filler, and (C) 5 to 50% by weight of the thermosetting resin.
50% by weight, each of which is a resin composition for sealing. 2. The encapsulating resin composition according to claim 1, wherein the inorganic filler (A) is any one of crystalline silica, silicon nitride, alumina, and aluminum nitride, or a mixture of two or more thereof. . (A) an inorganic filler having a maximum particle diameter of 300 μm or less and an average particle diameter of 5 μm or more and 70 μm or less;
(B) Maximum particle size is 5 μm or less and average particle size is 0.05 μm
The titanium oxide filler having a particle size of not less than 1 μm or less and (C) a thermosetting resin are essential components.
(A) 30 to 90% by weight of the inorganic filler, (B) 5 to 50% by weight of the titanium oxide filler, and (C) 5 to 50% by weight of the thermosetting resin.
A semiconductor device in which a semiconductor chip is resin-encapsulated with a cured product of an encapsulating resin composition containing 50% by weight.