JP2002184575A - Organic el display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic EL display device which enables manufacturing at low cost, with thinner layers, with good yield rate and is of high-definition. SOLUTION: The organic EL display device is composed of a substrate 1, switching elements Ty11, Ty12, Ty21 and Ty22 formed on the substrate and equipped with non-single-crystal silicon base on which a control electrode and a pair of controlled electrodes are formed and a plurality of organic EL elements EL11, EL12, EL21 and EL22 which are formed on the substrate and activated by the switching elements. Each of the organic EL elements contains at least one organic luminescent layer between two electrodes 4 and 11 at least one of which is transparent and also contains a color filter layer 3 formed by vapor deposition of pigments and/or organic dyes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL (electroluminescence) display device, and more particularly, to an organic EL (electroluminescence) display device which can be manufactured at low cost, can be thinned, and has high quality. And an organic EL display device having a good yield.

[0002]

2. Description of the Related Art In recent years, there has been an increasing demand for flat display panels from the viewpoint of reducing the occupied area.

At present, a liquid crystal display panel is widely used as a flat display panel. Recently, however, an electroluminescent element (hereinafter, referred to as an “EL element”) that is lightweight and does not require a backlight.
That. ) Devices are attracting attention.

[0004] EL elements are classified into inorganic EL elements and organic EL elements. The inorganic EL elements use an inorganic substance in a light-emitting layer, for example, by adding a small amount of Mn to ZnS. Although they are classified into thin film types, all of them utilize the phenomenon that electrons in the phosphor are accelerated under a high electric field, collide with the emission center, and are excited, and are currently in practical use. Many inorganic EL elements operate with alternating current, and the luminance depends on voltage and frequency.

An organic EL device injects electrons and holes (holes) from the outside and excites the luminescent center by the recombination energy of the electrons and generally emits light from tin-doped indium oxide (ITO) or the like. Become a hole (hole)
An injection electrode, a hole (hole) transport layer containing triphenyldiamine or the like formed on the hole injection electrode, and an aluminum quinolinol complex (Alq) laminated on the hole transport layer.
_An organic light emitting layer containing a fluorescent substance such as ₃ ) and a metal electrode (electron injection electrode) such as magnesium having a small work function are basically provided.

[0006] Inorganic EL elements, for driving, while requiring a relatively high voltage, the organic EL element, by 10 volts before and after low voltage, very high as hundreds to several tens of thousand cd / m ² The organic EL device has a feature that luminance can be obtained, and among the EL devices, an organic EL device is mainly used.

An organic EL display panel including such an organic EL element is expected to be applied to a display device, particularly, a color display device.

[0008] The organic EL display device includes a large number of organic EL elements, and is usually configured to be driven by an active matrix circuit. Each of the pixels (pixels) of the organic EL element has a drive current with respect to the pixel. Field effect transistor (FE) for supplying bias
T) and a switch FET indicating whether the bias FET should be selected are connected one by one. As a field effect transistor (FET), a thin film transistor (TFT: Thin Film Transi) is generally used.
(stor) is used.

FIG. 17 is a block diagram showing an example of a conventional active matrix type organic EL display device, and FIG. 18 is an enlarged circuit diagram of a portion A in FIG.

As shown in FIGS. 17 and 18, a conventional organic EL display device 90 has an X-direction signal lines X1, X2,...
2,..., Power supply lines Vdd1, Vdd2,.
FT transistors Ty11, Ty12,..., Ty21,
Ty22,..., A current control TFT transistor M11,
M12, ..., M21, M22, ..., organic EL element EL1
, EL21, ..., EL21, EL22, ..., capacitors C11, C12, ..., C21, C22, ..., X-direction peripheral drive circuit (shift register X-axis) 92 and Y-direction peripheral drive circuit (shift register Y-axis) 93 Etc.

In the conventional organic EL display device 90 having such a configuration, the X-direction signal lines X1, X2,
, And the Y-direction signal lines Y1, Y2,..., The pixel is specified, and the switching TFT of the specified pixel.
Transistors Ty11, Ty12,..., Ty21, Ty
22 are turned on, and the capacitor C1 of the pixel is turned on.
, C21,..., C21, C22,. This turns on the current control TFT transistors M11, M12,..., M21, M22,..., From the power supply lines Vdd1, Vdd2, etc. to the organic EL elements EL11, EL12,. Is supplied, and the organic EL elements EL11, EL1
2, ... emits light.

For example, when an X-direction scanning signal is output to an X-direction signal line X1 and a Y-direction scanning signal is output to a Y-direction signal line Y1 according to image data, the X-direction signal line X1 and the Y-direction signal line are output. The pixel is specified by Y1, the switching TFT transistor Ty11 of the specified pixel is turned on, the capacitor C11 image data is held, and as a result, the current controlling TFT transistor M11 is turned on, and the organic EL element EL11 Is supplied with a current corresponding to the image data, and light emission is controlled.

When the organic EL display device is used for a color display device, the three primary colors of light are red,
A method of forming a light-emitting layer emitting green and blue light for each pixel, and forming a plurality of light-emitting layers and a color filter layer, using a color filter layer, from white light emitted from the plurality of light-emitting layers, A method of extracting the three primary colors of light, red, green, and blue, for each pixel is generally used. Also,
By combining a fluorescence conversion layer that absorbs light of a specific wavelength and converts it into light of a predetermined color, a color filter layer and a light emitting layer having a peak at a specific wavelength, for each pixel, red,
A method of obtaining green and blue light is also used.

However, the three primary colors of light, red, green,
When a light-emitting layer emitting blue light is formed for each pixel, it is only difficult to obtain red light with high color purity because there are few fluorescent materials suitable for use in the light-emitting layer emitting red light. In general, the lifetime of a light emitting layer that emits blue light is extremely short compared to the light emitting layer that emits red light and the light emitting layer that emits green light. There was a problem that the life of the layer was limited.

On the other hand, an organic light emitting layer that emits white light and a color filter layer are formed, and white light is converted into three primary colors of light, red, green, and blue, for each pixel by using the color filter layer. When a color display device is configured by extracting light of (R, G, B), a light emitting layer that emits monochromatic light, and a light that is formed of a fluorescent material and emits light from the light emitting layer is light of a predetermined color. When a color display device is configured by combining a fluorescence conversion layer that converts light into a color filter layer and a color filter layer, the color display device can be configured with one type of organic EL element, so that the configuration is simple. Not only that, cost reduction is possible, and it has practicality.

[0016]

Conventionally, a color filter layer has been formed on a substrate by a photolithography process. However, not only is a color resist material expensive, but also by a photolithography process.
In the case of forming a color filter layer, it is necessary to form a resist film of each color of R, G, and B, and after each exposure, a development process for removing unnecessary portions is indispensable. Since the film after patterning formed by the lithography process contains a volatile solvent and the like, a heat treatment for removing the volatile solvent and the like is required, and the number of steps is inevitably increased. There has been a problem that the time required for manufacture is long, and it is difficult to manufacture an organic EL display panel at low cost.

When a color filter layer is formed on a substrate by a photolithography process,
Since the thickness of the color filter layer may vary greatly depending on each color of R, G, and B, it is necessary to provide an overcoat layer to compensate for the difference in thickness. The thickness of the formed color filter layer is 1.0 to 2.0 μm,
The thickness of the overcoat layer is about 3.5 μm. On the other hand, since the thickness of the transparent electrode and the auxiliary wiring formed on the color filter layer is about 0.1 μm,
When there is even a slight change in the state of the color filter layer and the overcoat layer, the transparent electrode and the auxiliary wiring formed on the color filter layer may be cut off. There is also a problem that it may be difficult to function as a display panel.

Further, when a color filter layer is formed on a substrate by a photolithography process, it is necessary to remove unnecessary portions of the resist film by exposure and development. If it is not long enough, 5
Since a wall having an angle exceeding 0 degrees is generated, the transparent electrode and the auxiliary wiring formed on the color filter layer may be cut at this portion. On the other hand, when the exposure time is sufficiently long, However, there is also a problem that the cost is increased.

In addition, after the volatile solvent and the like are removed by the heat treatment, the surface of the film becomes non-uniform, which causes uneven light emission, thereby deteriorating the quality of the organic EL display panel. there were.

The same problem also occurs when a fluorescent conversion layer is provided which absorbs light emitted from the light emitting layer and excites the phosphor with the energy thereof to emit light.

Accordingly, it is an object of the present invention to provide an organic EL display device which can be manufactured at low cost, can be thinned, has high quality, and has a good yield. .

[0022]

SUMMARY OF THE INVENTION The object of the present invention is as follows.
A switching element including a substrate, a non-single-crystal silicon substrate formed on the substrate and having a control electrode and a set of controlled electrodes formed thereon, and a switching element formed on the substrate and driven by the switching element A plurality of organic EL elements, each of which includes at least one organic light-emitting layer between two electrodes, at least one of which is transparent, and further includes a step of depositing a pigment and / or an organic dye. This is achieved by an organic EL display device including the formed color filter layer.

According to the present invention, a color filter layer is formed by depositing a pigment and / or an organic dye without using an expensive color resist material containing not only a pigment but also a resin or a photosensitive component. Therefore, the manufacturing cost of the organic EL element, and therefore, the organic EL display device can be significantly reduced as compared with the case where a color filter layer is formed by a photolithography process.

According to the present invention, a color filter layer can be formed only by forming a vapor deposition film of each color using a mask such as a metal mask or a shadow mask. There is no need to expose and develop each, and there is no need for a step to remove volatile solvents from the film after patterning, which is significantly greater than when a color filter layer is formed by a photolithography process. Since the number of steps can be reduced, and the time required for manufacturing the organic EL device can be greatly reduced, the manufacturing cost of the organic EL device and, therefore, the organic EL display device can be significantly reduced. become.

Further, according to the present invention, since the color filter layer is formed by depositing a pigment and / or an organic dye, the thickness of the color filter layer can be greatly reduced. And therefore organic E
It is possible to reduce the thickness of the L display device.

Further, according to the present invention, since the color filter layer is formed by depositing a pigment and / or an organic dye, the thickness of the color filter layer can be greatly reduced. Since there is no need to provide a coat layer, it is possible to reliably prevent the possibility that the transparent electrode and the auxiliary wiring formed on the color filter layer will be cut due to the variation in the thickness of the color filter layer and the overcoat layer. Become.

Further, according to the present invention, when a pigment and / or an organic dye is vapor-deposited to form a color filter layer, the pigment and / or the organic dye is removed using a mask such as a metal mask or a shadow mask. , Metal masks, shadow masks, etc., and the walls formed at the edges of the color filter layer The angle can be suppressed within a range of several degrees, and therefore, it is possible to reliably prevent the transparent electrode and the auxiliary wiring formed on the color filter layer from being cut.

According to the present invention, the film after patterning does not contain a volatile solvent or the like, and it is not necessary to remove the volatile solvent or the like from the film after patterning. The surface of the color filter layer and the unevenness of the color filter layer can be reliably prevented, and the adverse effects on the electrodes and the organic light emitting layer due to the unevenness of the color filter layer can be minimized. Become.

Further, according to the present invention, since a color filter layer is formed by depositing a pigment and / or an organic dye, the color filter layer is formed on a relatively heat-resistant substrate such as a film. And the degree of freedom in selecting a substrate material can be improved.

[0030] In a preferred embodiment of the present invention, the organic EL element further comprises: a light-emitting device that converts light emitted from the at least one organic light-emitting layer into light having a predetermined wavelength on the two electrode sides of the color filter layer. A fluorescence conversion layer.

According to a preferred embodiment of the present invention, since the organic EL device includes the fluorescence conversion layer for converting light emitted from at least one organic light emitting layer into light having a predetermined wavelength, at least one organic light emitting layer is provided. It is possible to generate light having a wavelength that is not included in the light emitted from the light emitting layer, or to compensate for light having a wavelength that is insufficient in the light emitted from at least one organic light emitting layer.

In a further preferred aspect of the present invention, the fluorescence conversion layer is formed by depositing a fluorescent substance.

According to a further preferred embodiment of the present invention, since the fluorescent conversion layer is formed by depositing a fluorescent substance, the fluorescent conversion layer is formed by a photolithography process as compared with the case where the fluorescent conversion layer is formed. The conversion layer can be made significantly thinner, and the organic EL element, and thus the organic EL display device, can be made much thinner.

In a preferred embodiment of the present invention, the substrate is formed of a transparent substrate, and
One electrode is constituted by a transparent hole injection electrode and an electron injection electrode, and the organic EL element comprises, on the substrate, the color filter layer, the hole injection electrode, the at least one organic light emitting layer and the electron injection electrode. , In this order.

In a further preferred aspect of the present invention, the organic EL device further comprises: a light having a predetermined wavelength, the light emitted from the at least one organic light emitting layer being provided on the color filter layer on the side of the hole injection electrode. It has a fluorescence conversion layer for conversion.

In another preferred embodiment of the present invention, the two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the organic EL element is provided on the substrate by the electron injection electrode, the at least One organic light emitting layer, the hole injection electrode and the color filter layer are provided in this order.

In a further preferred embodiment of the present invention, the organic EL device further comprises: a light having a predetermined wavelength, the light emitted from the at least one organic light emitting layer being provided on the hole injection electrode side of the color filter layer. It has a fluorescence conversion layer for conversion.

In still another preferred embodiment of the present invention, the substrate is formed by a transparent substrate, and the two electrodes are constituted by a transparent hole injection electrode and a transparent electron injection electrode. Includes the color filter layer on one surface of the substrate, and the hole injection electrode, the at least one organic light emitting layer, and the electron injection electrode on the other surface of the substrate in this order.

[0039] In still another preferred embodiment of the present invention, the organic EL element further converts light emitted from the at least one organic light emitting layer into light having a predetermined wavelength on one surface of the substrate. A fluorescent conversion layer, wherein the fluorescent conversion layer is disposed on the substrate side of the color filter layer.

[0040] In still another preferred embodiment of the present invention, the organic EL element further converts light emitted from the at least one organic light emitting layer into light having a predetermined wavelength on the other surface of the substrate. A fluorescent conversion layer, wherein the fluorescent conversion layer is disposed between the electrode and the substrate.

[0041]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a pigment and / or an organic dye can be used to form a color filter layer. As the pigment, any of an inorganic pigment and an organic pigment can be used. As inorganic pigments,
For example, a composite oxide of a metal can be used,
Mixtures of inorganic and organic pigments can also be used.

Of the pigments and organic dyes, organic pigments and organic dyes are preferably used because of the large number of color variations.
Organic pigments are particularly preferred because they have heat resistance and do not dissolve in organic solvents or water.

In the present invention, the color filter layer comprises
The pigment and the organic dye can be formed by co-evaporation.

In the present invention, the color filter layer is preferably formed by depositing two or more kinds of pigments and / or two or more kinds of organic dyes. When two or more kinds of pigments and / or two or more kinds of organic dyes are vapor-deposited to form a color filter layer, a desired combination of two or more kinds of pigments and / or two or more kinds of organic dyes is obtained. It becomes possible to form a color filter layer having light transmission properties, and when a single pigment or organic dye is deposited, such as a green filter layer,
Even when it is difficult to form a color filter layer having desired light transmission characteristics, it is possible to form a color filter layer having desired light transmission characteristics.

In the present invention, when a color filter layer is formed using two or more kinds of pigments and / or two or more kinds of organic dyes, each boat containing the pigments and / or organic dyes is individually temperature-controlled. Preferably, two or more pigments and / or two or more organic dyes are co-evaporated to form a color filter layer. 2
When co-evaporating two or more kinds of pigments and / or two or more kinds of organic dyes, the co-evaporation can be performed at the same time, so that the operation time can be reduced as compared with the case where two or more evaporation films are laminated. It is also possible to mix two or more kinds of pigments and / or two or more kinds of organic dyes and vapor-deposit the respective pigments and / or organic dyes as compared with the case of vapor deposition. As desired, it becomes possible to form a color filter layer comprising two or more pigments and / or two or more organic dyes.

In the present invention, when a color filter layer is formed using two or more kinds of pigments and / or two or more kinds of organic dyes, two or more kinds of pigments and / or two or more kinds of organic dyes are used.
Alternatively, a color filter layer can be formed by laminating two or more vapor-deposited layers formed by vapor-depositing two or more types of organic dyes, respectively. When two or more kinds of pigments and / or two or more kinds of organic dyes are co-deposited to form a color filter layer, it is indispensable to precisely control the addition amount of each, and the operation is complicated. But 2
When a color filter layer is formed by laminating two or more deposition layers formed by vapor deposition of two or more kinds of pigments and / or two or more kinds of organic dyes, the desired light transmission is easily achieved. It is possible not only to form a color filter layer having characteristics, but also to form a color filter layer having desired light transmission characteristics even if the vapor pressure of each pigment and / or organic dye is greatly different. Becomes possible.

In the present invention, when a color filter layer is formed by laminating two or more vapor-deposited layers formed by vapor-depositing two or more types of pigments and / or two or more types of organic dyes, respectively, Each deposited layer may be formed by co-depositing two or more pigments and / or two or more organic dyes.

In the present invention, the color filter layer comprises
It is preferably formed by using a mask such as a metal mask or a shadow mask and vapor-depositing a pigment and / or an organic dye. When a color filter layer is formed by mask vapor deposition of a pigment and / or an organic dye, the color filter layer can be formed in a desired pattern.

Further, using a mask such as a metal mask or a shadow mask, pigments and / or organic dyes are supplied from the gap between the mask such as the metal mask or the shadow mask and the surface to be vapor-deposited such as the substrate surface. By vapor deposition so as to wrap around the vapor deposition surface, the color filter layer and the angle of the wall formed at the boundary between the region where the color filter layer is not formed can be suppressed to a range of several degrees. In addition, it is possible to reliably prevent the transparent electrode and the auxiliary wiring formed on the color filter layer from being cut.

In the present invention, the conditions for depositing the pigment and / or the organic dye are not particularly limited, but are not more than 1 × 10 ⁻⁴ Pa and the deposition rate is 0.01.
It is preferably about 1 nm / sec.

In the present invention, known materials can be used as the organic pigment and the organic dye.
Examples of organic pigments and organic dyes for red include diketopyrrolopyrrole-based, anthraquinone-based, quinacridone-based, perylene-based, azo-based, and benzimidazolone-based organic pigments and organic dyes for green. Examples include halogenated copper phthalocyanine-based and anthraquinone-based pigments, and examples of the organic pigments and organic dyes for blue include copper phthalocyanine-based and indanthrone-based pigments.
Further, as the organic pigment and organic dye for yellow for color mixing, isoindoline type, isoindolinone type, quinophthalone type, disazo type and the like, and as the organic pigment and organic dye for purple color, dioxazine type and anthraquinone type are used. And the like.

Among these organic pigments and organic dyes,
An azo organic pigment or organic dye is preferably used for forming a red filter layer, and a copper phthalocyanine organic pigment or organic dye is preferably used for forming a blue filter layer. The green-red filter layer is formed by stacking a copper phthalocyanine organic pigment or organic dye vapor-deposited layer and a disazo organic pigment or organic dye vapor-deposited layer, or a copper phthalocyanine organic pigment or It is preferable to form a mixture of an organic dye and a disazo organic pigment or organic dye.

In the present invention, as the color filter layer formed by vapor deposition is thicker, the chromaticity is improved, and when it is too thin, the function as a color filter layer is reduced.
When it is too thick, pigment crystals precipitate or cracks occur in the color filter layer.
The following is preferred. Specifically, the preferred thickness of the color filter layer depends on the color, and the red filter layer preferably has a thickness of 400 to 15000 Å, and the green filter layer has a thickness of 200 to 10000 Å. It preferably has a thickness in which a vapor deposition layer and a blue vapor deposition layer of 1000 to 2000 Å are laminated,
Preferably, the blue filter layer has a thickness between 400 and 15,000 Angstroms. The thicknesses of these red, green and blue filter layers can be varied according to the required optical properties.

In the present invention, preferably, a passivation layer is formed on the surface of the color filter layer. By forming a passivation layer on the surface of the color filter layer, it protects the color filter layer by preventing the color filter layer from being damaged by an etching process and a cleaning process performed when patterning the electrode. It becomes possible.

When the color filter layer is provided on the hole injection electrode, the passivation layer formed on the surface of the color filter layer serves to protect the organic light emitting layer from moisture and gas, and the color filter layer is When it is conductive, it can function as an insulating layer.

When the color filter layer is provided on the opposite surface of the substrate with respect to the two electrodes, the passivation layer formed on the surface of the color filter layer prevents the color filter layer from being damaged, It has a function of protecting the color filter layer.

In the present invention, a fluorescent conversion layer for converting the light emitted from the organic light emitting layer into light of a predetermined wavelength can be provided on the electrode side of the color filter layer. When the fluorescent conversion layer is provided, The passivation layer is formed on the surface of the fluorescence conversion layer and / or the color filter layer.

The fluorescence conversion layer contains a fluorescent substance that is excited by light incident from the organic light emitting layer, generates light having a wavelength different from that of the incident light, and emits it. A fluorescent substance is a substance that emits light having a wavelength determined by its energy rank.As the fluorescent substance contained in the fluorescence conversion layer, a compound that emits fluorescence corresponding to the three primary colors of light, such as red, green, and blue, is used. It is preferably used. Since a fluorescent substance can convert light having a short wavelength into light having a long wavelength, light of an arbitrary color (wavelength) is generated by converting blue light into red, green, and yellow light. be able to.

In the present invention, examples of the fluorescent substance which can be preferably used for the fluorescent conversion layer include, for example,
At least one selected from quinacridone, rubrene, styryl dyes and the like and compounds such as coumarin and luminogen disclosed in JP-A-63-264692.
There may be mentioned various compounds. Also, tris (8-quinolinato) aluminum (Alq) having a structure of the following formula:
A metal complex having 8-quinolinol or a derivative thereof as a ligand such as 3) or a fluorescent substance such as a tetraphenylbutadiene, anthracene, perylene, coronene, or 12-phthaloperinone derivative can also be preferably used for the fluorescence conversion layer. Further, phenylanthracene derivatives disclosed in JP-A-8-12600 and JP-A-8-1600 are disclosed.
The tetraarylethene derivative disclosed in No. 2969 can also be used as a fluorescent substance for the fluorescence conversion layer.

[0060]

Embedded image In the present invention, when a fluorescence conversion layer is provided, the thickness of the fluorescence conversion layer is preferably 2000 nm or less, particularly preferably about 300 nm to 600 nm.

In the present invention, when a fluorescent conversion layer is provided, it is preferable to form a fluorescent conversion layer by depositing a fluorescent substance.

In the present invention, the fluorescence conversion layer may be formed by depositing two or more kinds of fluorescent substances.

In the present invention, when two or more kinds of fluorescent substances are deposited to form the fluorescence conversion layer, each boat containing the fluorescent substances is individually temperature-controlled to share the two or more kinds of fluorescent substances. It is preferable to form a fluorescence conversion layer by vapor deposition. When two or more kinds of fluorescent substances are co-deposited, the deposition can be performed at the same time, so that the working time can be reduced as compared with the case where two or more deposited films are stacked, and Compared to a case where two or more kinds of fluorescent substances are mixed and vapor-deposited, a fluorescent conversion layer containing two or more kinds of fluorescent substances is formed as desired, even if the vapor pressure of each fluorescent substance is greatly different. It becomes possible.

In the present invention, when a fluorescent conversion layer is formed by using two or more kinds of fluorescent substances, two or more kinds of fluorescent substances are respectively deposited and two or more deposited layers are laminated. Thus, a fluorescence conversion layer can be formed. 2
When a fluorescent conversion layer is formed by co-evaporating more than one kind of fluorescent substance, it is indispensable to precisely control the addition amount of each, and the operation is complicated. In the case where a fluorescent conversion layer is formed by laminating two or more vapor-deposited layers formed by vapor deposition, it is only possible to easily form a fluorescent conversion layer having desired wavelength conversion characteristics. Instead, even if the vapor pressures of the respective fluorescent substances are greatly different, it is possible to form a fluorescent conversion layer having desired wavelength conversion characteristics.

In the present invention, when two or more kinds of fluorescent substances are respectively deposited and two or more deposited layers are laminated to form a fluorescence conversion layer, each deposited layer is formed of two or more fluorescent substances.
More than two kinds of fluorescent materials can be formed by co-evaporation.

In the present invention, the conditions under which the fluorescent substance is deposited are not particularly limited, but it is preferable that the deposition rate be about 1 to 10 nm / sec at 1 × 10 ⁻⁴ Pa or less.

In the present invention, the passivation layer
It can be formed of a silicon compound such as silicon oxide (SiOx) or silicon nitride (SiNy), but preferably contains silicon oxide such as silicon oxide alone or a composite film of silicon oxide and silicon nitride.

In the present invention, the passivation layer
It is preferably formed of a silicon compound such as silicon oxide or silicon nitride, but any material that does not adversely affect the color filter layer or the fluorescence conversion layer can be passivated with an organic transparent resin or an inorganic transparent resin. Layers can also be formed.

In the present invention, when the passivation layer formed of silicon oxide, silicon nitride, or a composite film of silicon oxide and silicon nitride may contain defects such as pinholes or foreign matter, In order to protect the passivation layer formed by silicon oxide, silicon nitride or a composite film of silicon oxide and silicon nitride, a protective film is formed on the passivation layer using an organic transparent resin or an inorganic transparent resin. You can also.

The passivation layer preferably has a refractive index at 632 nm of 1.40 to 1.55, and a refractive index at 632 nm of 1.44 to 1.4.
More preferably, it is 8. Passivation layer 6
If the refractive index at 32 nm is higher than this, the function of protecting the color filter layer or the fluorescence conversion layer from the components in the organic light emitting layer is reduced, while if lower than this,
The function of protecting the color filter layer or the fluorescence conversion layer from moisture or the like is reduced.

The passivation layer was made of silicon oxide (Si
When formed by Ox), x is preferably 1.8 to 2.2, and more preferably 1.x.
90 to 2.05. The value of x may be within this range as an average value of the passivation layer, and the value of x may change at a constant rate in the thickness direction of the passivation layer.

The passivation layer was made of silicon nitride (Si
When forming by Ny), it is preferable that y is 0.1 to 0.5. The value of y may be within this range as an average value of the passivation layer, and the value of y may change at a constant rate in the thickness direction of the passivation layer.

The passivation layer is formed as an impurity
0.5% by weight or less of C, Ar and the like may be contained;
Further, in order to relieve stress in the layer, H may be contained at 30 atomic% or less.

The passivation layer has a thickness of 2 to 50 nm.
It is preferable to have an average surface roughness (Ra) of
It preferably has a maximum surface roughness (Rmax) of 10 to 50 nm.

Further, it is preferable that the passivation layer has a transmittance for transmitting 80% or more of the light emitted from the organic light emitting layer.

The thickness of the passivation layer is not particularly limited, but is preferably 5 to 50 nm, particularly preferably 10 to 30 nm.

When the passivation layer is formed of silicon oxide, a sputtering method, a plasma CV
Although the passivation layer can be formed by the method D, it is preferable to form the passivation layer by a sputtering method, particularly, a high-frequency sputtering method using an RF power supply. The power of high frequency sputtering using an RF power source is preferably in the range of 10 to 100 W / cm 2, and the frequency is 13.56 MH.
z, the deposition rate is preferably 5 to 50 nm / min, and the pressure during the deposition is preferably 0.1 to 1.0 Pascal.

When a passivation layer made of silicon oxide is formed by a sputtering method, an inert gas used in a normal sputtering apparatus can be used as a sputtering gas.
It is preferable to use one kind of inert gas selected from the group consisting of Xe or a mixture of two or more kinds of inert gases. A
When any of r, Kr, and Xe is used as a main sputtering gas, the distance between the substrate and the target is preferably in the range of 20 to 60 Pascal · cm, and particularly preferably 30 to 50 Pascal · cm. It is preferably within the range. Of Ar, Kr and Xe,
Most preferably, Ar is used.

In the present invention, preferably, the organic EL device has a color filter formed by vapor deposition of a pigment and / or an organic dye.
Including a first color filter, a second color filter and a third color filter formed adjacent to each other,
The first color filter has a light transmission characteristic of transmitting light of a wavelength of 573 to 780 nm, the second color filter has a light transmission characteristic of transmitting light of a wavelength of 493 to 573 nm, Has a light transmission characteristic of transmitting light having a wavelength of 380 to 493 nm.

In the present invention, more preferably, the first color filter has a light transmission characteristic of transmitting light of a wavelength of 578 to 620 nm, and the second color filter transmits light of a wavelength of 520 to 570 nm. The third color filter has a light transmission characteristic of transmitting light,
It has a light transmission characteristic of transmitting light having a wavelength of 30 to 470 nm.

As described above, by configuring the color filter, the organic EL element can emit red, green and blue light, which are the three primary colors of light, regardless of the wavelength of light emitted from the organic light emitting layer. Not only when an organic light emitting layer that emits white light is used, but also as a constituent material of the organic light emitting layer, it has low color purity, long life, high luminous efficiency, and red and green light. Even when an organic substance that emits light having a wavelength close to blue is used, color display can be performed in an arbitrary color.

In the present invention, the color filter is 5
It may have a light transmission characteristic of transmitting light of a wavelength of 73 to 780 nm, a light transmission characteristic of transmitting light of a wavelength of 493 to 573 nm, or a light transmission characteristic of transmitting light of a wavelength of 380 to 493 nm. More preferably, the color filter is 578 to 620 nm
Light transmission characteristics for transmitting light of a wavelength of 520 to 57
A light transmission characteristic of transmitting light having a wavelength of 0 nm or 43
It has a light transmission characteristic of transmitting light having a wavelength of 0 to 470 nm.

By configuring the color filter of the organic EL element so as to have such characteristics, regardless of the wavelength of light emitted from the organic light emitting layer, the three primary colors of light, red, green and blue light are emitted. Of these, light of any color can be generated, and when an organic EL element is used in a color display device, a specific portion of the color display device can be displayed in a specific color.

The organic EL device according to the present invention comprises at least one organic light-emitting layer between two electrodes, at least one of which is transparent, and the organic light-emitting layer is at least one or two types involved in the light-emitting function. Contains compounds.

In the organic EL device according to the present invention, the wavelength of light emitted from at least one organic light emitting layer is not particularly limited, but preferably, at least one organic light emitting layer has at least 380 to 780
It is configured to emit white light having a continuous emission spectrum of nm.

In the present invention, it is particularly preferable that at least one organic light emitting layer is configured to emit white light having a continuous light emission spectrum of 430 nm to 650 nm or less.

In the present invention, the organic light emitting layer contains a host material which is a hole transporting compound or an electron transporting compound or a mixture thereof, and has a hole (hole) and electron injecting function, a hole and electron transporting function, It preferably has a function of generating excitons by recombination of holes and electrons, and preferably contains a compound which is electronically relatively neutral.

The hole transporting compound used as the host material in the organic light emitting layer includes a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a pyrazolone derivative, a phenylenediamine derivative, an arylamine derivative, and an aminoamine derivative. Substituted chalcone derivatives, oxazole derivatives,
Examples include a styryl anthracene derivative, a fluorenone derivative, a hydrazone derivative, and a stilbene derivative. Further, a triphenyldiamine derivative can be preferably used.

As an example of the triphenyldiamine derivative, a tetraarylbendicine compound (triaryldiamine or triphenyldiamine: TPD) is particularly preferred.

Tetraarylbendicine compound (TD
Preferred specific examples of P) are as follows.

[0091]

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[0092]

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[0093]

Embedded image As the electron transporting compound used as a host material of the organic light emitting layer, a quinoline derivative can be preferably used. Further, a metal complex having 8-quinolinol or a derivative thereof as a ligand, particularly, a structure of the following formula: Tris (8-quinolinato) aluminum (Alq3) having the following formula is preferably used. Further, a phenylanthracene derivative or a tetraarylethene derivative can also be used as the electron transporting compound.

[0094]

Embedded image In the present invention, the organic light-emitting layer preferably has a structure in which a host material that is a hole-transport compound or an electron-transport compound or a mixture thereof is doped with a dopant that is a fluorescent material.

Further, the organic EL display panel and the organic EL element according to the present invention preferably have two organic light emitting layers laminated on each other. When two organic light-emitting layers are formed, a wide light-emitting wavelength band is secured and the degree of freedom of the color of the light-emitting color is improved by doping a fluorescent substance having a different light-emitting wavelength into each of the organic light-emitting layers. be able to.

In the present invention, examples of the fluorescent substance contained as a dopant include, for example, JP-A-63-264.
No. 692, specifically, one or more compounds selected from the group consisting of compounds such as rubrene compounds, coumarin compounds, quinacridone compounds, and dicyanomethylpyran compounds can be preferably used.

Examples of the fluorescent substance which can be preferably used in the present invention are as follows.

[0098]

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[0099]

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[0100]

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[0101]

Embedded image Further, in the present invention, JP-A-2000-26334
And naphthacene-based compounds described in JP-A-2000-26337 can also be preferably used as a fluorescent substance contained as a dopant,
When used in combination with a rubrene-based compound, a coumarin-based compound, a quinacridone-based compound, a dicyanomethylpyran-based compound, or the like, the life of the organic EL device can be significantly improved.

In the present invention, a naphthacene-based compound which can be preferably used as a fluorescent substance contained as a dopant has a basic skeleton represented by the formula (I).

[0103]

Embedded image In the formula (I), R ¹ to R ⁴ each represent any of an unsubstituted or substituted alkyl group, an aryl group, an amino group, a heterocyclic group and an alkenyl group; It is preferably either a ring group or an alkenyl group.

The aryl group represented by R ¹ to R ⁴ may be monocyclic or polycyclic, and includes condensed rings and ring assemblies. The total carbon number is preferably from 6 to 30, and may have a substituent.

The aryl group represented by R ¹ to R ⁴ includes a phenyl group, (o-, m-, p-) tolyl group,
Pyrenyl group, perylenyl group, coronenyl group, (1- and 2-) naphthyl group, anthryl group, (o-, m-,
p-) Biphenylyl, terphenyl, phenanthryl and the like are preferred.

The amino group represented by R ¹ to R ⁴ may be any of an alkylamino group, an arylamino group, an aralkylamino group and the like. These preferably have an aliphatic and / or absent 4-aromatic carbon ring having 1 to 6 carbon atoms in total. Specifically, a dimethylamino group, a diethylamino group, a dibutylamino group, a diphenylamino group, a ditolylamino group, a bisdiphenylamino group, a bisnaphthylamino group and the like are included.

The heterocyclic group represented by R ¹ to R ⁴ includes a 5- or 6-membered aromatic heterocyclic group containing O, N and S as a heteroatom, and a condensed group having 2 to 20 carbon atoms. And polycyclic aromatic heterocyclic groups.

The alkenyl groups represented by R ¹ to R ⁴ include (1- and 2-) phenylalkenyl groups having at least one phenyl group as a substituent, (1,2)
-And 2,2-) diphenylalkenyl groups, (1,
A 2,2-) triphenylalkenyl group or the like is preferable, but an unsubstituted one may be used.

The aromatic heterocyclic group and the condensed polycyclic aromatic heterocyclic group include, for example, thienyl group, furyl group, pyrrolyl group, pyridine group, quinolyl group, quinoxalyl and the like.

When R ¹ to R ⁴ have a substituent, it is preferred that at least two of these substituents are any of an aryl group, an amino group, a heterocyclic group, an alkenyl group and an aryloxy group. As for the aryl group, amino group, heterocyclic group and alkenyl group, those similar to R ¹ to R ⁴ can be used.

The aryloxy group as a substituent of R ¹ to R ⁴ is preferably an aryloxy group having an aryl group having a total of 6 to 18 carbon atoms, and specifically, (o-, m-, p
-) Phenoxy group and the like.

Two or more of these substituents may form a condensed ring, or may be further substituted. When substituted, preferred substituents are the same as those described above.

R¹Or R⁴When has a substituent
Has at least two of the substituents
Preferably. The substitution position is particularly limited
Not meta, para, or ortho
Is also good. Also, R¹And R⁴, R ²And R³Are the same
Are the same, but different from each other.
You may.

In the formula (I), at least 5 or more, preferably 6 or more, of R ¹ to R ⁸ are an unsubstituted or substituted alkyl, aryl, amino, alkenyl or heterocyclic group. Group.

The alkyl groups represented by R ⁵ , R ⁶ , R ⁷ and R ⁸ are preferably those having 1 to 6 carbon atoms, but may be linear or branched. .
Preferred specific examples of the alkyl group represented by R ⁵ , R ⁶ , R ⁷ and R ⁸ include a methyl group, an ethyl group, (n,
i) a propyl group, a (n, i, sec, tert) -butyl group, a (n, i, neo, tert) -pentyl group and the like.

The aryl group, amino group and alkenyl group represented by R ⁵ , R ⁶ , R ⁷ and R ⁸ include R
¹ to the same as those for R ⁴ may be used. Further, R ⁵ and R ⁶ and R ⁷ and R ⁸ are preferably the same, but may be different from each other.

In the present invention, compounds that can be preferably used as a fluorescent substance to be contained as a dopant include, for example, the following.

[0118]

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[0119]

Embedded image When two organic light emitting layers are provided, it is preferable that each organic light emitting layer contains two or more kinds of these fluorescent substances, and two or more kinds of fluorescent substances have different emission wavelengths.

In the present invention, the content of the dopant in the organic light emitting layer is preferably from 0.01 to 20% by weight, more preferably from 0.1 to 15% by weight.

In the present invention, the thickness of the organic light emitting layer is not particularly limited, and the preferable thickness varies depending on the forming method.
More preferably, it is 10 to 300 nm.

In the present invention, when two or more organic light emitting layers are formed, the thickness of each organic light emitting layer ranges from a thickness corresponding to one molecular layer to a thickness less than the entire organic light emitting layer. Yes, specifically, 1 to 85 nm, preferably 5 to 60 nm, and more preferably 5 to 50 nm.

In the present invention, preferably, the organic light emitting layer is formed by vapor deposition.

In the present invention, the conditions for forming the organic light emitting layer by vapor deposition are not particularly limited, but are not more than 1 × 10 ⁻⁴ pascal and the vapor deposition rate is 0.01
It is preferably about 1 nm / sec.

In the present invention, the organic light emitting layer preferably contains a mixture of a hole transporting compound and an electron injecting and transporting compound.

When the organic light-emitting layer contains a mixture of a hole transporting compound and an electron injecting and transporting compound, a hopping conduction path for carriers is formed, and each carrier passes through a material that is predominantly polar. This makes it difficult for carriers to move and inject carriers having the opposite polarity, thereby preventing the compound contained in the organic light emitting layer from being damaged, and thus has an advantage that the life of the device can be improved.

Further, a dopant made of a fluorescent substance is
By including the mixture of the hole transport compound and the electron injecting and transporting compound in the organic light emitting layer, the emission wavelength characteristics of the organic light emitting layer itself can be changed, and the emission wavelength can be shifted to the longer wavelength side. Thus, the emission intensity can be improved, and further, the stability of the organic EL element can be improved.

When the organic light-emitting layer contains a mixture of a hole transporting compound and an electron injecting and transporting compound, the mixing ratio of the hole transporting compound and the electron injecting and transporting compound depends on the respective carrier mobilities and carrier concentrations. Therefore, it is generally determined by weight ratio of 1/99 to 9
9/1, preferably 10/90 to 90/10, more preferably 20/80 to 80/20, and most preferably 40/60 to 60/40.

When forming an organic light emitting layer containing a mixture of a hole transporting compound and an electron injecting and transporting compound,
The hole transporting compound and the electron injecting and transporting compound are preferably put in different evaporation sources, evaporated and co-evaporated, but the vapor pressures of the hole transporting compound and the electron injecting and transporting compound are about the same or very close. In this case, it is also possible to previously mix in the same evaporation source and perform evaporation.

When forming an organic light emitting layer containing a mixture of a hole transporting compound and an electron injecting and transporting compound, the hole transporting compound and the electron injecting and transporting compound must be uniformly mixed in the organic light emitting layer. Is preferred, but it is not necessary that they be uniformly mixed.

In the present invention, the organic EL display panel and the organic EL element preferably have a function of facilitating the injection of holes from the hole injection electrode and a stable transport of holes in addition to at least one organic light emitting layer. Hole injecting / transporting layer having a function of preventing electron transport and a function of facilitating the injection of electrons from the electron injecting electrode, a function of stably transporting electrons, and a function of preventing hole transport. It has an injection transport layer. By providing these layers, it is possible to increase the number of holes and electrons injected into the organic light emitting layer, to confine the organic light emitting layer in the organic light emitting layer, to optimize the recombination region, and to improve the light emission efficiency.

In the present invention, more preferably, the organic EL device has a hole injection electrode, a hole injection layer having a function of facilitating the injection of holes from the hole injection electrode, a stable transport of holes, and an electron injection. A hole transport layer having a function of preventing transport, a two-layer organic light emitting layer, an electron transport layer having a function of stably transporting electrons and inhibiting the transport of holes, and a function of facilitating injection of electrons from an electron injection electrode. And an electron injection layer having an electron injection layer.

In the present invention, compounds that can be preferably used for the hole injecting and transporting layer, the hole injecting layer, and the hole transporting layer include, for example, a tetraarylbendicine compound (triaryldiamine or triphenyldiamine: TPD), Examples include an aromatic tertiary amine, a hydrazone derivative, a carbazole derivative, a triazole derivative, an imidazole derivative, an oxadiazole derivative having an amino group, and polythiophene. Of these, tetraarylbendicine compounds (triaryldiamine or triphenyldiamine: TP
D) and triarylamine multimers (ATP) described in WO / 98/30071 can be particularly preferably used.

Preferred specific examples of the triarylamine multimer (ATP) are as follows.

[0135]

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[0136]

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[0137]

Embedded image In the present invention, furthermore, JP-A-63-295695
JP, JP-A-2-191694, JP-A-3-7
No. 92, JP-A-5-234681, JP-A-5-234681
-239455, JP-A-5-299174, JP-A-7-126225, JP-A-7-126
No. 226, JP-A-8-100172, EP0
Various organic compounds described in 650955 A1 and the like can also be used for the hole injection / transport layer, the hole injection layer, and the hole transport layer.

In the present invention, two or more of these compounds may be used in combination, and when two or more of these compounds are used in combination, they may be mixed in one layer or formed as two or more layers. , May be laminated.

When the hole injecting and transporting layer is divided to provide a hole injecting layer and a hole transporting layer, a preferable combination can be selected from the above compounds and used. At this time, from the side of a hole injection electrode such as ITO, a layer of a compound having a smaller ionization potential is formed in the order of
It is preferable to laminate. Further, it is preferable to form a layer of a compound having a good thin film property on the surface of the hole injection electrode. Particularly, the ATP is used for the hole injection layer, and the TTP is used.
It is preferable to use PD for the hole transport layer. The ATP
Is used for the hole injection layer and the TPD is used for the hole transport layer, whereby the driving voltage is reduced, and the occurrence of current leak and the occurrence and growth of dark spots can be prevented.

In the present invention, the hole injecting and transporting layer, the hole injecting layer and the hole transporting layer can be formed by depositing the above compound. When a device is formed by vapor deposition, a uniform thin film having a thickness of about 1 to 10 nm without pinholes can be formed. Therefore, a compound having a low ionization potential and absorbing visible wavelength light is used for the hole injection layer. However, it is possible to prevent a decrease in luminous efficiency due to a change in color tone of a luminescent color or reabsorption.

In the present invention, the electron injecting and transporting layer can be divided into an electron injecting layer and an electron transporting layer, and the compound which can be preferably used in the electron injecting and transporting layer, the electron injecting layer, and the electron transporting layer. Is, for example, an organometallic complex having 8-quinolinol such as tris (8-quinolinolato) aluminum (Alq ₃ ) or a derivative thereof as a ligand, an oxadiazole derivative, a perylene derivative,
Pyridine derivatives, pyrimidine derivatives, quinoxaline derivatives and the like can be mentioned.

In the present invention, the electron injecting and transporting layer, the electron injecting layer, and the electron transporting layer can be formed by depositing the compound.

In the present invention, the conditions for forming the organic light emitting layer, the hole injection / transport layer or the hole injection layer and the hole transport layer, and the electron injection / transport layer or the electron injection layer and the electron transport layer by vapor deposition are not particularly limited. Although it is not done, below 1 × 10 ^-4 Pascal,
Preferably, the deposition rate is about 0.01 to 1 nm / sec. Each layer is preferably formed continuously under a reduced pressure of 1 × 10 ⁻⁴ pascal or less. 1 × 10
^By continuously forming each layer under a reduced pressure of ⁻⁴ Pa or less, it is possible to prevent impurities from being adsorbed at the interface of each layer, so that it is possible to obtain an organic EL element having high characteristics. At the same time, the driving voltage of the organic EL element is reduced, and the generation and growth of dark spots can be suppressed.

In the present invention, when the organic light emitting layer, the hole injection transport layer, the hole injection layer, the hole transport layer, the electron injection transport layer, the electron injection layer or the electron transport layer contains two or more compounds, The organic light emitting layer, the hole injection transport layer, the hole injection layer, the hole transport layer, the electron injection transport layer, the electron injection layer or the electron transport layer are formed by co-evaporation by individually controlling the temperature of each boat containing the compound. Is preferred.

In the present invention, a high-resistance type having a hole conduction path and having a function of blocking electrons is provided in place of, or in addition to, the hole injection / transport layer or the hole injection layer and the hole transport layer. An inorganic hole injection transport layer can also be provided.

As described above, by providing a high-resistance inorganic hole injecting and transporting layer having a hole conduction path and a function of blocking electrons, holes can be efficiently injected into the organic light emitting layer, and the luminous efficiency can be improved. Can be improved, and the drive voltage can be reduced. Further, by providing a high-resistance inorganic hole injecting and transporting layer having a hole conduction path and a function of blocking electrons, the thickness of the organic EL display panel and the organic EL element can be reduced. By forming a color filter layer or a color filter, it is possible to further reduce the thickness of the organic EL display panel and the organic EL element which are thinned.

In the present invention, a metal or semimetal oxide such as silicon or germanium is used as a main component of the inorganic hole injecting and transporting layer, and has a work function of 4.5.
eV or more, preferably 4.5 to 6.0 eV, containing one or more of metals, metalloids and oxides, carbides, nitrides, silicides, and borides thereof to improve the conduction path of holes. When formed, not only can holes be efficiently injected from the hole injection electrode to the organic light emitting layer, but also the movement of electrons from the organic light emitting layer to the hole injection electrode can be suppressed, and holes and electrons can be formed in the organic light emitting layer. Can be efficiently recombined, which is preferable.

When a high-resistance inorganic hole injecting / transporting layer is provided, it is equivalent to a conventional organic hole injecting / transporting layer, an organic hole injecting layer, or an organic EL element having an organic hole transporting layer. , Higher brightness, high heat resistance and high weather resistance, long life and good connection with the hole injection electrode, which is an inorganic material. There is also an advantage that there is less. Further, unlike the relatively expensive organic substance, the inorganic substance for forming the inorganic hole injecting and transporting layer is inexpensive, easily available, and easy to form the inorganic hole injecting and transporting layer. The manufacturing cost of the element or the organic EL display panel can be reduced.

The resistivity of the high-resistance inorganic hole injecting and transporting layer is preferably 1 Ω · cm to 1 × 10 ¹¹ Ω · cm, and preferably 1 × 10 ³ Ω · cm to 1 × 10 ⁸ Ω · cm.
cm is particularly preferred. By setting the resistivity of the inorganic hole injecting and transporting layer in such a range, it is possible to dramatically improve hole injecting efficiency while maintaining high electron blocking properties. The resistivity of the high-resistance inorganic hole injecting and transporting layer can also be determined from the sheet resistance and the film thickness.

[0150] high-resistance inorganic hole injecting and transporting layer, it is preferable to oxides of silicon and germanium _{(Si 1 -x Ge x) O} y as a main component, here, x to the 0 1, y is 1 0.7 to 2.2, preferably 1.7 to 1.99. The main components of the inorganic hole injection transport layer are:
It may be silicon oxide (that is, x is 0.5 or less), germanium oxide (that is, x exceeds 0.5), or a mixed thin film thereof. If y is larger or smaller than this range, the hole injection function is undesirably reduced. The composition can be determined, for example, by Rutherford backscattering, chemical analysis, and the like.

The inorganic hole injecting and transporting layer further has a work function of 4.5 eV or more, preferably from 4.5 to 6.0.
It is preferable to contain any one or more of eV metals, metalloids, and oxides, carbides, nitrides, silicides, and borides thereof. As a metal having a work function of 4.5 eV or more, preferably 4.5 to 6.0 eV, A
u, Cu, Fe, Ni, Ru, Sn, Cr, Ir, N
b, Pt, Mo, W, Ta, Pd, and Co. These metals, metalloids and their oxides,
Carbides, nitrides, silicides, and borides can be used as a mixture, in which case the mixing ratio is arbitrary. Their content is preferably from 0.2 to 40 mol%, more preferably from 1 to 20 mol%. If these contents are less than 0.2 mol%, the hole injection function is reduced, while if they are more than 40 mol%, the electron blocking function is reduced, which is not preferable. When two or more of these are used in combination, the total content is preferably within such a range.

The above-mentioned metals, metalloids and oxides thereof,
Carbides, nitrides, silicides, and borides are usually contained in a high resistance inorganic hole injecting and transporting layer in a dispersed state. The particle size of the dispersed particles is usually about 1 to 5 nm. It is considered that a hopping path for transporting holes is formed between the dispersed particles, which are conductors, via a high-resistance oxide of silicon and germanium, which are main components.

The high-resistance inorganic hole injecting and transporting layer further comprises H as an impurity and N as a sputtering gas.
e, Ar, Kr, Xe, and the like may be contained in a total of 5 molecule% or less.

The composition of the high-resistance inorganic hole injecting and transporting layer may not be uniform, and if it has such a composition on average, it may have a concentration gradient in the film thickness direction.

The high-resistance inorganic hole injecting and transporting layer is usually
It is in an amorphous state.

The high-resistance inorganic hole injecting and transporting layer has a thickness of 0.3
To have a thickness of about 100 nm,
More preferably, it has a thickness of 1 to 100 nm, particularly preferably 5 to 30 nm. Even if the thickness of the high-resistance inorganic hole injection transport layer is less than 0.3 nm or more than 100 nm, the function of hole injection is not sufficiently exhibited.

The high-resistance inorganic hole injecting and transporting layer can be formed by various physical or chemical thin film forming methods such as sputtering and vapor deposition, but is preferably formed by a sputtering method. In particular,
Oxides of silicon and germanium, which are main components, and metals and metalloids having a work function of 4.5 eV or more, and any one of these oxides, carbides, nitrides, silicides, and borides
It is preferable to form the inorganic hole injecting and transporting layer by a multi-source sputtering method in which a plurality of species are used as targets and sputtering is performed separately. According to the multi-source sputtering method, sputtering can be performed under conditions suitable for each target. Further, on the target of the main component, a small piece of one or more of a metal, a metalloid, and an oxide, a carbide, a nitride, a silicide, and a boride thereof is arranged, and the area ratio thereof is appropriately adjusted. By
By adjusting the composition, the inorganic hole injecting and transporting layer can be formed by a single sputtering method.

When the inorganic hole injecting and transporting layer is formed by sputtering, the pressure of the sputtering gas is 0.1
It is preferably set in the range of 1 to 1 Pascal. As a sputtering gas, an inert gas usually used for sputtering, for example, Ar, Ne, Xe, Kr, or the like can be used, and if necessary, a nitrogen gas can also be used. At the time of sputtering, in addition to these sputtering gases, 1 to 99% of oxygen gas may be mixed.

As the sputtering method, a high-frequency sputtering method using an RF power source or a DC sputtering method can be used. The power of the high-frequency sputtering using the RF power source is preferably in the range of 0.1 to 10 W / cm 2, Deposition rate is 0.5 to 10n
m / min, especially in the range of 1 to 5 nm.

The substrate temperature during film formation is 25 to 150 ° C.
It is about.

In the present invention, instead of or in addition to the electron injecting / transporting layer or the electron injecting layer and the electron transporting layer, there is provided a high-resistance type having a conduction path for electrons and having a function of blocking holes. An inorganic electron injection transport layer can also be provided.

As described above, by providing a high-resistance inorganic electron injecting and transporting layer having an electron conduction path and having a function of blocking holes between the organic light emitting layer and the electron injecting electrode, the organic light emitting layer is provided. Electrons can be efficiently injected into the semiconductor device, and the luminous efficiency can be improved, and the driving voltage can be reduced. Furthermore, by providing a high-resistance inorganic electron injecting and transporting layer having a function of blocking holes with electron conduction paths, the thickness of the organic EL display panel and the organic EL element can be reduced. By forming a color filter layer or a color filter, it is possible to further reduce the thickness of the organic EL display panel and the organic EL element which are thinned.

The high resistance inorganic electron injecting and transporting layer preferably has a work function of 4 eV or less, preferably 1 eV to 4 eV as a first component, and has a Li, Na, K, R
one or more alkali metal elements selected from the group consisting of b, Cs and Fr, or one or more alkali metal earth elements selected from the group consisting of Mg, Ca and Sr;
Alternatively, it contains an oxide of one or more lanthanoid elements selected from the group consisting of La and Ce. Among these, lithium oxide, magnesium oxide, calcium oxide and cerium oxide are particularly preferred. When these elements are used in combination, the mixing ratio can be arbitrarily determined. When these elements are used as a mixture, it is preferable that the mixture contains 50 mol% or more of lithium oxide in terms of Li ₂ O.

The high-resistance inorganic electron injecting and transporting layer further comprises
As the second component, Zn, Sn, V, Ru, Sm and I
n or more elements selected from the group consisting of n. The content of the second component is preferably from 0.2 to 4
0 mol%, more preferably 1 to 20 mol%. When the content of the second component is less than 0.2 mol%,
When the electron injection function is reduced, while exceeding 40 mol%,
The hole block function deteriorates, which is not preferable. When two or more elements are used in combination as the second component, the total content is preferably within such a range. The second component may exist in a metal state or an oxide state.

As described above, in the first component having high resistance,
As the second component, Zn, Sn, V, Ru, Sm and I
forming at least one element selected from the group consisting of n from 0.2 to 40 mol% to form a conductive path, thereby efficiently injecting electrons from the electron injection electrode into the organic light emitting layer. Can be. This is considered to be due to the fact that the inclusion of the second component in the first component causes the conductive material to be present in the form of islands in the insulating material, thereby forming a hopping path for electron injection. .

By allowing the second component to be contained in the first component in an amount of 0.2 to 40 mol%, it is possible to further suppress the movement of holes from the organic light emitting layer to the electron injection electrode. In the light emitting layer, holes and electrons can be efficiently recombined.

In the case where a high-resistance inorganic electron injecting and transporting layer is provided, as compared with a conventional organic electron injecting and transporting layer, an organic electron injecting layer, and an organic EL element having an organic electron transporting layer.
Equivalent or higher luminance can be obtained, and the heat resistance and weather resistance are high, so the life is long and the connectivity with the electron injection electrode, which is an inorganic material, is good. There is an advantage that occurrence of occurrence is small.
Further, unlike the relatively expensive organic substance, the inorganic substance for forming the inorganic electroinjection and transport layer is inexpensive, easily available, and easy to form the inorganic electron injecting and transporting layer. The manufacturing cost of the element or the organic EL display panel can be reduced.

The resistivity of the high-resistance inorganic electron injection / transport layer is as follows:
It is preferably 1 Ω · cm to 1 × 10 ¹¹ Ω · cm, and 1 × 10 ³ Ω · cm to 1 × 10 ⁸ Ω · cm.
Is particularly preferred. By setting the resistivity of the inorganic electron injecting and transporting layer in such a range, it is possible to dramatically improve electron injection efficiency while maintaining high hole blocking properties. In this case, the sheet resistance is 4
It can be measured by a terminal method or the like.

The oxide of the first component usually has a stoichiometric composition, but it deviates somewhat from this, and a non-stoichiometric composition is obtained.
ry). The same applies to the oxide of the second component.

The high-resistance inorganic electron injecting and transporting layer further comprises
As impurities, H, Ne used as a sputtering gas,
Ar, Kr, Xe and the like may be contained in a total of 5 molecule% or less.

The high-resistance inorganic electron injecting and transporting layer is usually in an amorphous state.

The high-resistance inorganic electron injecting and transporting layer preferably has a thickness of 0.2 to 30 nm.
It is particularly preferable to have a film thickness of 2 to 20.
Even if the thickness of the high-resistance inorganic electron injecting and transporting layer is less than 0.2 nm or more than 30 nm, the function of injecting electrons is not sufficiently exhibited.

The high-resistance inorganic electron injecting and transporting layer can be formed by various physical or chemical thin film forming methods such as sputtering and vapor deposition, but is preferably formed by sputtering. In particular, it is preferable to form the inorganic electron injecting and transporting layer by a multiple sputtering method in which the first component and the second component are used as targets and sputtering is performed separately. According to the multi-source sputtering method, sputtering can be performed under conditions suitable for each target. Further, the inorganic electron injecting and transporting layer can also be formed by a single sputtering method using a mixed target of the earth component and the second component.

When the inorganic electron injecting and transporting layer is formed by a sputtering method, the pressure of the sputtering gas is preferably set in the range of 0.1 to 1 Pa. As the sputtering gas, an inert gas usually used in the sputtering method, for example, Ar, Ne, Xe, Kr, or the like can be used, and if necessary, a nitrogen gas can be used. At the time of sputtering, in addition to these sputtering gases, 1 to 99% of oxygen gas may be mixed.

As the sputtering method, a high frequency sputtering method using an RF power source or a DC sputtering method can be used. The power of the high frequency sputtering using the RF power source is preferably in the range of 0.1 to 10 W / cm 2, Deposition rate is 0.5 to 10n
m / min, especially in the range of 1 to 5 nm.

The substrate temperature during film formation is 25 to 150 ° C.
It is about.

In the present invention, the hole injection electrode is preferably formed of a material capable of efficiently injecting holes into the hole injection transport layer or the hole injection layer, and has a work function of 4.5 to 5.5. It is preferably formed of a material of 5 eV. Materials that can be preferably used for forming the hole injection electrode include, for example, tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), and indium oxide (In ₂ oxide).
O ₃ ), tin oxide (SnO ₂ ) and zinc oxide (ZnO)
And oxides containing any one of the above as main components. These oxides may have compositions that deviate somewhat from their stoichiometric compositions. Tin-doped indium oxide (IT
The mixing ratio of tin oxide to indium oxide in O) is preferably 1 to 20% by weight, more preferably 5 to 20% by weight.
To 12% by weight. The mixing ratio of zinc oxide to indium oxide in zinc-doped indium oxide (IZO) is usually 12 to 32% by weight.

In the present invention, the hole injection electrode may contain silicon oxide (SiO ₂ ) for adjusting the work function. The content of silicon oxide (SiO ₂ )
In molar ratio to tin-doped indium oxide (ITO),
It is preferably 0.5 to 10%. By including silicon oxide, tin-doped indium oxide (ITO) can be increased.

In the present invention, the electrode on the side from which light emitted from the organic light emitting layer is extracted is usually 400 to 700.
It is preferable that the light transmittance for light in the emission wavelength band of nm, particularly for each emitted light, is 50% or more, more preferably 80% or more, and most preferably 90% or more. . If the light transmittance is lower than this, it is not possible to obtain the luminance required for the light emitting element.

In the present invention, the thickness of the electrode on the side from which light emitted from the organic light emitting layer is extracted is 50 to 500 n.
m, more preferably 50 to 300 nm. If it is too thick, light transmittance will decrease,
Moreover, peeling may occur, which is not preferable. On the other hand, if it is too thin, the strength decreases, which is not preferable.

In the present invention, the electron injection electrode is preferably formed of a material that can efficiently inject electrons into the electron injection transport layer or the electron injection layer.

When the electron injecting / transporting layer or the electron injecting layer is formed of an organic material, materials that can be preferably used for forming the electron injecting electrode include:
For example, K, Li, Na, Mg, La, Ce, Ca,
A single metal element such as Sr, Ba, Sn, Zn, and Zr, or a binary or ternary alloy containing these metal elements can be used to improve stability. Specific examples of binary or ternary alloys containing these metal elements include Ag.Mg (Ag: 0.1 to 50 atomic%) and Al.Li (Li: 0.01 to 14 atomic%).
Atomic%), In.Mg (Mg: 50 to 80 atomic%), Al.Ca (Ca: 0.01 to 20 atomic%)
Can be mentioned.

In the present invention, the thickness of the electron injection electrode is
It is preferably at least 0.1 nm, more preferably at least 0.5 nm, most preferably at least 1 nm.
Although the upper limit of the thickness of the electron injection electrode is not particularly limited,
Usually, it is about 1 to 500 nm.

On the other hand, when the inorganic electron injecting and transporting layer is formed of an inorganic material, it is not necessary to have a low work function and have an electron injecting property. The material for this is not particularly limited, and ordinary metals can be used. Among metals, Al, Ag, In, Ti, Cu, Au, Mo, W,
One or more metal elements selected from the group consisting of Pt, Pd and Ni, in particular, the group consisting of Al and Ag can be preferably used from the viewpoint of conductivity and ease of handling.

Further, in order to prevent deterioration of the organic light emitting layer and the electrodes, it is preferable to seal the organic EL element with a sealing plate or the like. The sealing plate is bonded to the organic EL element using an adhesive resin layer to prevent moisture from entering,
The organic EL element is sealed. Ar, as a sealing gas,
He, inert gases such as _{N 2} is preferable. The moisture content of the sealing gas is preferably 100 ppm or less, more preferably 10 ppm or less, and most preferably 1 ppm.
It is as follows. Although the lower limit of the moisture content of the sealing gas is not particularly limited, it is usually about 0.1 ppm.

The sealing plate is preferably flat.
Preferred materials include transparent materials such as glass, quartz, and resin, and among them, glass and resin are particularly preferably used. As the glass, alkali glass is preferably used from the viewpoint of cost, and in particular, soda glass not subjected to surface treatment is inexpensive and preferable. As the resin, the same material as the substrate can be preferably used.

The sealing plate can be held at a desired height by using a spacer. As the spacer, resin beads, silica beads, glass beads, glass fibers and the like can be used, and among these, glass beads are particularly preferable.

Further, a concave portion can be formed in the sealing plate without using the spacer, and when the concave portion is formed in the sealing plate, a spacer can be used. When a spacer is used after forming a recess in the sealing plate, 2
It is preferable to use a spacer of from 8 to 8 μm.

The adhesive for bonding the sealing plate is not particularly limited as long as it can maintain a stable strength and has good airtightness. Adhesives are preferably used.

In the present invention, when the substrate is located on the side from which the light emitted from the organic light emitting layer is extracted, the substrate must be transparent, but when the substrate is on the side from which the light emitted from the organic light emitting layer is extracted. When it is not located at a position, it may be translucent or opaque.

In the present invention, the material of the substrate is not particularly limited.
It can be selected as appropriate.

As a material which can be preferably used for forming a transparent substrate, glass is exemplified, and among the glass, non-alkali glass is particularly preferably used. Furthermore, in the present invention, since the color filter layer or the color filter is formed by depositing a pigment and / or an organic dye, there is no contamination by oils and fats or foreign matters, and if there is no defect such as a scratch, polycarbonate or polyethylene terephthalate is used. A transparent resin having relatively low heat resistance, such as polybutylene terephthalate, polybutylene naphthalate, and polyether sulfone, and a resin on which a passivation film made of an inorganic material is formed can also be used.

When the substrate is not required to be transparent, in addition to glass and the transparent resin, a resin having relatively high heat resistance such as polyamide imide, polyimide and polyaryl ether nitrile, and a ceramic such as quartz and alumina may be used. A substrate obtained by subjecting a metal sheet such as stainless steel to an insulation treatment such as surface oxidation or the like can be preferably used as the substrate.

The organic EL display device according to the present invention is generally a DC-driven or pulse-driven organic EL display device.
Used as a display device, the applied voltage is usually
It is about 2 to 30V.

The organic EL display device according to the present invention can be driven by alternating current.

The switching element according to the present invention is not particularly limited as long as a control electrode and a set of controlled electrodes are formed on a non-single-crystal silicon substrate and can directly drive an organic EL element. In order to function as a display device, a TFT is preferable.

FIG. 1 is a schematic sectional view of an organic EL device according to a preferred embodiment of the present invention.

As shown in FIG. 1, the organic EL device according to the present embodiment comprises a substrate 1, a color filter 2 formed by depositing an organic pigment and / or an organic dye on the substrate 1 by mask deposition, and A passivation layer 3, a hole injection electrode 4, a hole injection layer 5, a hole transport layer 6,
The first organic light emitting layer 7, the second organic light emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the electron injection electrode 11
The layers are stacked in this order.

A driving power supply 12 is connected between the hole injection electrode 4 and the electron injection electrode 11.

In this embodiment, the color filter 2 is composed of a first color filter 2a, a second color filter 2b, and a third color filter 2c formed adjacent to each other. Has a light transmission characteristic of transmitting light having a wavelength of 578 to 620 nm, and the second color filter has a light transmission characteristic of 520 to 620 nm.
And the third color filter has a light transmission characteristic of transmitting light having a wavelength of about 570 nm to about 570 nm.
It has a light transmission characteristic of transmitting light having a wavelength of m.

In the present embodiment, the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is configured to be extracted through the substrate 1. It is formed of a transparent material.

According to this embodiment, since the color filter 2 is formed by mask vapor deposition of an organic pigment and / or an organic dye, an expensive color resist material containing a resin, a photosensitive component and the like is used. The manufacturing cost of the organic EL display panel can be greatly reduced as compared with the case where the color filter 2 is formed by the photolithography process.

According to the present embodiment, the color filter 2 can be formed only by forming a vapor deposition film of each color using a mask such as a metal mask.
In the case where the color filter 2 is formed by a photolithography process, it is not necessary to expose and develop the resist film of each color, and to remove a volatile solvent or the like from the film after patterning. Since the number of steps can be greatly reduced as compared with the above, and the time required for manufacturing the organic EL display panel can be greatly reduced, the manufacturing cost of the organic EL display panel can be significantly reduced. Will be possible.

Further, according to this embodiment, since the color filter 2 is formed by depositing an organic pigment and / or an organic dye by mask, the thickness of the color filter 2 can be greatly reduced. It is possible to reduce the thickness of the organic EL display panel.

Further, according to the present embodiment, since the color filter 2 is formed by vapor deposition of an organic pigment and / or an organic dye, the thickness of the color filter 2 can be greatly reduced. Therefore, since there is no need to provide an overcoat layer, the color filter 2
Of the transparent electrode and the auxiliary wiring formed on the color filter 2 can be reliably prevented from being cut.

Further, according to the present embodiment, when the organic pigment and / or organic dye is vapor-deposited by mask, and the color filter 2 is formed, a mask such as a metal mask is used to form the organic pigment and / or organic dye. Is deposited so as to go around the substrate from the gap of the metal mask, thereby suppressing the angle of the wall formed at the boundary between the color filter 2 and the area where the color filter 2 is not formed to within a range of several degrees. Therefore, it is possible to reliably prevent the transparent electrode and the auxiliary wiring formed on the color filter 2 from being cut.

According to this embodiment, the film after patterning does not contain a volatile solvent or the like.
Since it is not necessary to remove a volatile solvent or the like from the film after patterning, it is possible to reliably prevent the surface of the color filter 2 from becoming uneven and causing uneven light emission. It is possible to minimize adverse effects on the electrodes and the organic light emitting layer due to the unevenness of the surface.

Further, according to this embodiment, since the color filter 2 is formed by depositing an organic pigment and / or an organic dye by mask, the color filter 2 is formed on a relatively low heat-resistant substrate such as a resin film. 2 can be formed, and the degree of freedom in selecting a substrate material can be improved.

FIG. 2 is a schematic sectional view of an organic EL device according to another preferred embodiment of the present invention.

As shown in FIG. 2, the organic EL device according to the present embodiment comprises a substrate 1, a color filter 2 formed by vapor deposition of an organic pigment and / or an organic dye on the substrate 1, A fluorescence conversion layer 13, a passivation layer 3, a hole injection electrode 4, a hole injection layer 5,
The hole transport layer 6, the first organic light-emitting layer 7, the second organic light-emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the electron injection electrode 11 are laminated and formed in this order. Have been. The fluorescence conversion layer 13 has a function of converting light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 into light having a predetermined wavelength.

A drive power source 12 is connected between the hole injection electrode 4 and the electron injection electrode 11.

In this embodiment, as in the embodiment shown in FIG. 1, the color filter 2 includes a first color filter 2a, a second color filter 2b, and a third color filter 2b formed adjacent to each other. The first color filter has a light transmission characteristic of transmitting light having a wavelength of 578 to 620 nm, and the second color filter has a light transmission characteristic of 520 to 570 nm.
, And the third color filter has a light transmission characteristic of transmitting light of a wavelength of 430 to 470 nm.

Also in this embodiment, similarly to the embodiment shown in FIG. 1, light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 passes through the substrate 1. ,
The substrate is configured to be removed, and thus the substrate is formed of a transparent material.

According to the present embodiment, the fluorescent conversion layer 13 having a function of converting light emitted from the first organic light emitting layer 7 and the light emitted from the second organic light emitting layer 8 into light having a predetermined wavelength is further provided. Therefore, light having a wavelength not included in the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is generated, or the first organic light emitting layer 7 and the second It becomes possible to compensate for light of a wavelength that is insufficient in the light emitted from the organic light emitting layer 8.

FIG. 3 is a schematic sectional view of an organic EL device according to another preferred embodiment of the present invention.

As shown in FIG. 3, the organic EL device according to the present embodiment comprises a substrate 1, an electron injection electrode 11, an electron injection layer 10, an electron transport layer 9, and a first organic light emitting layer 7.
A second organic light emitting layer 8, a hole transport layer 6, an injection transport layer 5, a hole injection electrode 4, a color filter 2 formed by vapor deposition of an organic pigment and / or an organic dye, and passivation. The layers 3 are laminated and formed in this order.

A driving power supply 12 is connected between the hole injection electrode 4 and the electron injection electrode 11.

In this embodiment, as in the embodiment shown in FIG. 1, the color filter 2 includes a first color filter 2a, a second color filter 2b, and a third color filter 2b formed adjacent to each other. The first color filter has a light transmission characteristic of transmitting light having a wavelength of 578 to 620 nm, and the second color filter has a light transmission characteristic of 520 to 570 nm.
, And the third color filter has a light transmission characteristic of transmitting light of a wavelength of 430 to 470 nm.

In the present embodiment, the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is extracted to the opposite side to the substrate 1, so that the substrate 1 is formed of a transparent material. It is not required to do so.

FIG. 4 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

As shown in FIG. 4, the organic EL device according to the present embodiment comprises a substrate 1, an electron injection electrode 11, an electron injection layer 10, an electron transport layer 9, and a first organic light emitting layer 7.
, A second organic light emitting layer 8, a hole transport layer 6, an injection transport layer 5, a hole injection electrode 4, a fluorescence conversion layer 13, and an organic pigment and / or organic dye formed by mask evaporation. The color filter 2 and the passivation layer 3 are laminated and formed in this order. The fluorescence conversion layer 13 has a function of converting light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 into light having a predetermined wavelength.

A driving power supply 12 is connected between the hole injection electrode 4 and the electron injection electrode 11.

In the present embodiment, as in the embodiment shown in FIG. 1, the color filter 2 includes a first color filter 2a, a second color filter 2b, and a third color filter 2b formed adjacent to each other. The first color filter has a light transmission characteristic of transmitting light having a wavelength of 578 to 620 nm, and the second color filter has a light transmission characteristic of 520 to 570 nm.
, And the third color filter has a light transmission characteristic of transmitting light of a wavelength of 430 to 470 nm.

In this embodiment, the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is extracted to the side opposite to the substrate 1, and therefore, the substrate 1 is formed of a transparent material. It is not required to do so.

According to the present embodiment, the fluorescent conversion layer 13 having a function of converting the light emitted from the first organic light emitting layer 7 and the light emitted from the second organic light emitting layer 8 into light having a predetermined wavelength is further provided. Therefore, light having a wavelength not included in the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is generated, or the first organic light emitting layer 7 and the second It becomes possible to compensate for light of a wavelength that is insufficient in the light emitted from the organic light emitting layer 8.

FIG. 5 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

As shown in FIG. 5, the organic EL device according to the present embodiment comprises a substrate 1 and one surface of the substrate 1.
A color filter 2 formed by vapor deposition of an organic pigment and / or an organic dye by a mask, and a passivation layer 3
Are stacked in this order, and a hole injection electrode 4, a hole injection layer 5, and a hole transport layer 6 are formed on the other surface of the substrate 1.
, A first organic light emitting layer 7, a second organic light emitting layer 8, an electron transport layer 9, an electron injection layer 10, and an electron injection electrode 11 are laminated and formed in this order. .

A drive power supply 12 is connected between the hole injection electrode 4 and the electron injection electrode 11.

In this embodiment, as in the embodiment shown in FIG. 1, the color filter 2 includes a first color filter 2a, a second color filter 2b, and a third color filter 2b formed adjacent to each other. The first color filter has a light transmission characteristic of transmitting light having a wavelength of 578 to 620 nm, and the second color filter has a light transmission characteristic of 520 to 570 nm.
, And the third color filter has a light transmission characteristic of transmitting light of a wavelength of 430 to 470 nm.

In this embodiment, the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is extracted through the substrate 1, the color filter 2 and the passivation layer 3, and The substrate 1 is formed of a transparent material.

FIG. 6 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

As shown in FIG. 6, the organic EL device according to the present embodiment comprises a substrate 1 and one surface of the substrate 1,
A fluorescent conversion layer 13, a color filter 2 formed by mask vapor deposition of an organic pigment and / or an organic dye, and a passivation layer 3 are laminated in this order, and a substrate 1
The hole injection electrode 4 and the hole injection layer 5
A hole transport layer 6, a first organic light emitting layer 7, a second organic light emitting layer 8, an electron transport layer 9, an electron injection layer 10,
The electron injection electrodes 11 are stacked and formed in this order. The fluorescence conversion layer 13 has a function of converting light emitted from the first organic light-emitting layer 7 and the second organic light-emitting layer 8 and incident on the fluorescence conversion layer 13 via the substrate 1 into light having a predetermined wavelength. Have.

A drive power supply 12 is connected between the hole injection electrode 4 and the electron injection electrode 11.

In this embodiment, as in the embodiment shown in FIG. 1, the color filter 2 includes a first color filter 2a, a second color filter 2b, and a third color filter 2b formed adjacent to each other. The first color filter has a light transmission characteristic of transmitting light having a wavelength of 578 to 620 nm, and the second color filter has a light transmission characteristic of 520 to 570 nm.
, And the third color filter has a light transmission characteristic of transmitting light of a wavelength of 430 to 470 nm.

In this embodiment, the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 passes through the substrate 1, the fluorescence conversion layer 13, the color filter 2, and the passivation layer 3, The substrate 1 is taken out, and therefore, is formed of a transparent material.

According to this embodiment, the fluorescent conversion layer 13 having the function of converting the light emitted from the first organic light emitting layer 7 and the light emitted from the second organic light emitting layer 8 into light having a predetermined wavelength is further provided. Therefore, light having a wavelength not included in the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is generated, or the first organic light emitting layer 7 and the second It becomes possible to compensate for light of a wavelength that is insufficient in the light emitted from the organic light emitting layer 8.

FIG. 7 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

As shown in FIG. 7, the organic EL device according to the present embodiment comprises a substrate 1 and one surface of the substrate 1.
A color filter 2 formed by vapor deposition of an organic pigment and / or an organic dye by a mask, and a passivation layer 3
Are stacked in this order, and on the other surface of the substrate 1, the fluorescence conversion layer 13, the passivation layer 14, the hole injection electrode 4, the hole injection layer 5, the hole transport layer 6, and the first The organic light emitting layer 7, the second organic light emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the electron injection electrode 11 are laminated and formed in this order. Fluorescence conversion layer 13
Has a function of converting light incident from the first organic light emitting layer 7 and the second organic light emitting layer 8 into light of a predetermined wavelength, and emitting the light toward the substrate 1.

A drive power supply 12 is connected between the hole injection electrode 4 and the electron injection electrode 11.

In this embodiment, as in the embodiment shown in FIG. 1, the color filter 2 includes a first color filter 2a, a second color filter 2b and a third color filter 2b formed adjacent to each other. The first color filter has a light transmission characteristic of transmitting light having a wavelength of 578 to 620 nm, and the second color filter has a light transmission characteristic of 520 to 570 nm.
, And the third color filter has a light transmission characteristic of transmitting light of a wavelength of 430 to 470 nm.

In this embodiment, the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is extracted through the substrate 1, the color filter 2 and the passivation layer 3, and The substrate 1 is formed of a transparent material.

According to the present embodiment, a fluorescent conversion layer 13 having a function of converting light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 into light having a predetermined wavelength is further provided. Therefore, light having a wavelength not included in the light emitted from the first organic light emitting layer 7 and the second organic light emitting layer 8 is generated, or the first organic light emitting layer 7 and the second It becomes possible to compensate for light of a wavelength that is insufficient in the light emitted from the organic light emitting layer 8.

FIG. 8 is a schematic plan view of a TFT array for driving organic EL elements of an organic EL display device according to a preferred embodiment of the present invention.

As shown in FIG. 8, source electrode 23 is connected to source bus 21 and contact hole 23
TF formed on the silicon substrate 31 through a
It is connected to the source of T2.

On the silicon substrate 31, a gate bus 22 commonly connected to TFTs of other pixels (not shown) is formed, and a gate electrode is formed at a portion of the silicon substrate 31 where the gate bus 22 intersects. You.

The drain wiring 24 is connected to the source of the TFT 2 and the drain of the TFT 2 formed on the silicon substrate 31 with the gate electrode interposed therebetween through the contact hole 24a. It is connected to the gate line 25 via 24b. The gate line 25 is formed on a silicon substrate 32 constituting the TFT 1 and a capacitor 28
Is connected to one of the electrodes.

The other electrode of the capacitor 28 is connected to the earth bus 33 and to the source electrode 27. The source electrode 27 is connected to the source of the TFT 1 via the contact hole 27a. A gate electrode is formed at a portion of the silicon substrate 32 where the gate line 25 intersects.

A drain wiring 26 is connected to a source and a drain formed on the silicon substrate 31 with a gate electrode interposed therebetween through a contact hole 26a.
The drain wiring 26 constitutes one electrode of the organic EL element to be a pixel, or is connected to one electrode of the organic EL element.

A switching element is formed by TFTs such as the TFT 1 for driving the organic EL element and the TFT 2 for driving the TFT 1 configured as described above.

The switching elements include, for example, n ⁺ /
An i / n ⁺ region is formed to form an active layer.
Here, n ⁺ is an N-type doped portion, and i ⁺
Indicates an undoped portion. Instead of n ⁺ , p ⁺ doped p-type can also be used. The active layer of the switching element is preferably formed of polysilicon, since polysilicon has a sufficient stability with respect to energization as compared with amorphous silicon.

The α-Si layer as a precursor of polysilicon can be laminated by various CVD methods, but a plasma CVD method is preferably used.

The stacked α-Si layers are annealed and crystallized by an excimer laser such as a KrF laser (248 nm). Specifically, SID '96,
Digest of technical paper
The method shown on pages 17 to 28 of s can be used.

In annealing using an excimer laser, the substrate temperature is preferably kept at 100 to 300 ° C., and 100 to 300 mJ /
Preferably, a laser beam with an energy of square centimeters is used.

Instead of the laser annealing method, crystallization can be performed by using a commonly used thermal annealing method.
By using the thermal annealing method and the laser annealing method together, more preferable results can be obtained.

The active layer of the switching element of the present invention has 9 active layers.
It may be a silicon thin film formed through a heat treatment at about 00 ° C. or a silicon thin film formed at a relatively low temperature of 600 ° C. or less.

The active layer of the switching element of the present invention, that is, the α-Si layer has a thickness of 100 to 800 Å, preferably 300 to 500 Å.

The polysilicon layer, which is the active layer, is patterned in an island shape by photolithography so as to have a configuration required as a switching element.

As the substrate, quartz, ceramic, sapphire, glass or the like having an insulating property can be used, but an inexpensive material such as low strain point glass can be preferably used. When a glass substrate is used, the entire manufacturing process of the organic EL display device avoids melting or distortion of the glass, and the dopant is out-diffused (out) in the active area.
In order to avoid being t-diffused, the annealing process is also performed at a low temperature. When a glass substrate is used, it is usually 800 ° C. or lower, preferably 6 ° C.
Temperature control must be performed so that the organic EL display device is manufactured at a temperature of 00 ° C. or less.

To form the control electrode, an insulated gate material is preferably laminated on the polysilicon island and over the surface of the insulating substrate. As an insulating material,
Silicon dioxide (SiO ₂ ) that can be laminated by chemical vapor deposition such as plasma CVD or low pressure CVD is preferably used. The thickness of the gate oxide insulating layer is preferably about 50-200 nm. The substrate temperature during the annealing treatment is preferably from 250 to 400 ° C., and in order to produce a high quality insulated gate material, it is particularly preferable to perform the annealing treatment at from 300 to 600 ° C. for from 1 to 3 hours. .

Further, as a control electrode, for example, a gate electrode is formed by vapor deposition or sputtering, and the gate electrode is patterned. The preferred thickness of the gate electrode is 100 to 500 nm.

It is preferable to use polysilicon as a gate and to form the gate as follows.

P-doped α by plasma CVD
Forming a Si layer, annealing at a temperature of 600 ° C., and performing polycrystallization to obtain n-type polycrystalline silicon; and patterning by photolithography.

A signal electrode line and a scanning electrode line may be formed as required. Al alloy, Al, Cr, W, Mo
And the like are formed by photolithography.

When an Al gate is used, it is preferable to perform anodic oxidation twice for insulation. For details of the anodic oxidation method, see
No. 0 publication.

Further, n ⁺
Alternatively, a p ⁺ site is formed.

A contact such as a source or a drain as a controlled electrode is formed by forming an opening in an insulating film. Among the insulating films, silicon dioxide can be formed by plasma CVD using TEOS (tetraethoxyorthosilicate) as a material gas and setting the substrate temperature at 250 to 400 ° C., for example.
Set the substrate temperature to 100 to 300 ° C and set the ECR-C
VD can also produce a silicon dioxide insulating film.

For example, silicon dioxide or silica is preferably formed in a thickness of 0.2 to 3 μm by an etch-back method by plasma etching, a plasma CVD method, a plasma enhanced CVD method, a low pressure CVD method, or the like. Thereby, an interlayer insulating film can be formed. By this method, a planarized interlayer insulating film can be obtained.

In this method, in addition to silica, phosphor silica glass (PSG) and boron silica glass (BS
It can also be used G), it may be a compound of silicon nitride such as Si ₃ N _4.

In the present invention, the off-state current of the switching element is 1 × 10 ⁻⁸ A or less, particularly 1 × 10 ⁻⁸ A.
^-10 A or less. The lower limit of the off-state current is not particularly limited and is preferably as small as possible, but is usually 1 × 10 ⁻¹³ A, preferably 1 × 10 ⁻¹⁴ A.
It is about. When the off-state current is high, erroneous light emission and reduction in contrast are caused, which is not preferable.

The electric field mobility of the switching element is preferably not more than 60 cm 2 / V · sec.
It is particularly preferred that the pressure be in the range of 50 to 50 cm 2 / V · sec.

Hereinafter, a preferred configuration and a manufacturing process of a switching element according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

FIGS. 9 to 16 are process diagrams showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

As shown in FIG. 9, first, an α-Si layer 51 is laminated on a substrate 50 by a sputtering method, a CVD method, preferably a plasma CVD method.

Thereafter, as shown in FIG. 10, the α-Si layer 51 is annealed and crystallized by an excimer laser 70 to form an active layer 51a made of polysilicon.
Is formed.

Further, as shown in FIG. 11, the crystallized active layer 51a is patterned into an island shape by photolithography.

Next, as shown in FIG. 12, an insulating gate 52 is laminated over the surface of the polysilicon island 51a and the surface of the insulating substrate 50. The temperature of the substrate 50 is preferably 250 to 400 ° C., and in order to produce a high-quality insulated gate material, it is particularly preferable to perform the annealing treatment at 300 to 600 ° C. for 1 to 3 hours.

Further, as shown in FIG. 13, a gate electrode 53 is formed by vapor deposition or sputtering.

Next, as shown in FIG. 14, the gate electrode 53 is patterned, and ion doping 55 is performed on the patterned gate electrode 53,
An n ⁺ or p ⁺ portion is formed, and a signal electrode line and a scan electrode line are formed by photolithography.

Further, contacts such as a source and a drain are formed.

First, a silicon dioxide film 60 is formed as an interlayer insulating layer by normal pressure CVD. Next, the interlayer insulating layer 60 is etched to form a contact, and a source connection portion and a drain connection portion are opened.

A source wiring electrode 61 and a drain wiring electrode 62 are formed on the thus opened source connection part and drain connection part, respectively, and connected to the source electrode and the drain electrode. In this case, one of the source electrode and the drain electrode functions as the first electrode or the second electrode of the organic EL element, or is connected to the first electrode or the second electrode.

Further, on the drain wiring electrode 62, an insulating film 63 is formed, and at the same time, an edge cover covering portions other than the pixel portion is formed. As shown in FIG. 15, a switching element is formed.

For connection with an electrode of an organic EL element such as a hole injection electrode 65, for example, as shown in FIG.
By forming a connection metal layer 66 of Ti or the like, the connectivity can be improved.

[0284]

EXAMPLES Examples and comparative examples will be described below to further clarify the effects of the present invention.

Example 1 As a transparent substrate, # 1 manufactured by Corning Japan KK
Using a 737 heat-resistant alkali-free glass substrate, an amorphous silicon layer having a thickness of 600 Å was formed on a transparent substrate by a CVD method. The film forming conditions were as follows.

Si ₂ H ₆ gas: 100 SCCM Pressure: 40 Pascal Temperature: 480 ° C. The amorphous silicon layer thus formed was subjected to solid phase growth to form an active layer as a polysilicon layer. In the solid phase growth, both thermal annealing and laser annealing were used. The conditions of the annealing treatment were as follows.

Thermal annealing: N ₂ : 1 SLM Temperature: 600 ° C. Processing time: 24 hours Laser annealing: KrF excimer laser: 254 nm Energy density: 200 mJ / cm 2 Square shot: 50 Next, the polysilicon layer was patterned and 500 An Angstrom thick active silicon layer was produced.

On the active silicon layer thus obtained,
A silicon dioxide layer serving as a gate oxide film is formed by plasma CV.
The film was formed to a thickness of about 800 angstroms by Method D. The film forming conditions are as follows.

Power input: 50 W TEOS (tetraethoxyorthosilicate) gas: 5
0 SCCM O ₂ : 500 SCCM Pressure: 13.3 to 66.7 Pascal Temperature: 350 ° C. M serving as a gate electrode on the formed silicon dioxide layer
the o-SiO ₂ layer, by sputtering, about 100
A film was formed to a thickness of 0 Å.

Next, the Mo—SiO ₂ layer and the silicon dioxide layer were patterned by dry etching to form a gate electrode and a gate oxide film.

Further, using the gate electrode as a mask, N-type impurities are added to portions of the active silicon layer to be the source and drain regions by ion doping.
P was doped.

Then, at about 550 ° C. in a nitrogen gas atmosphere.
And heated for 10 hours to activate the dopant.

Further, at about 400 ° C. in a hydrogen gas atmosphere,
Then, heat treatment was performed for 30 minutes for hydrogenation to reduce the defect state density of the semiconductor.

Next, a silicon dioxide film serving as an interlayer insulating layer was formed to a thickness of about 8000 angstroms over the entire substrate. The film forming conditions were as follows.

O ₂ / H ₂ : 10 SLM 5% SiH ₄ / N ₂ : 1 SLM 1% PH ₃ / N ₂ : 500 SCCM N ₂ : 10 SLM Temperature: 410 ° C. Pressure: atmospheric pressure Dioxide as an interlayer insulating layer thus formed The silicon film is etched to form holes for contact, and then A is used as a source wiring electrode and a drain wiring electrode.
1 was deposited.

The S value of the TFT array obtained as described above was 1.0 V / decade, and the off current was 4 × 10
^-10 A.

Then, a red pigment, a green pigment and a blue pigment are respectively mask-deposited on a transparent substrate on which an organic EL element is to be formed, and a first color filter and a second color filter formed adjacent to each other. A color filter consisting of a filter and a third color filter was formed.

Here, the first color filter corresponding to the red filter is a pigment red 254 (Pigment Red 254) represented by the structural formula (1) as a red pigment.
And a second color filter corresponding to the green filter was formed by vapor deposition of tertiary butyl titanium phthalocyanine represented by the structural formula (2). Further, the third color filter corresponding to the blue filter was formed by depositing monomethyl copper phthalocyanine represented by the structural formula (3) as a blue pigment.

[0299]

Embedded image

[0300]

Embedded image

[0301]

Embedded image The measured thicknesses of the first color filter, the second color filter, and the third color filter were 4223 angstroms, 4012 angstroms, and 3694 angstroms, respectively.

After a color filter was formed on a transparent substrate, a passivation layer was formed on the color filter by RF sputtering using silicon dioxide as a target. As the sputtering gas, 100
The pressure was 0.5 Pascal using SCCM Al.
The temperature was room temperature, the input power was 500 W at a frequency of 13.56 MHz, and the distance between the substrate and the target was 5 cm. The composition of the passivation layer thus formed was SiO _1.8 .

Further, a transparent electrode (ITO) film was formed on the passivation film by sputtering, and the transparent electrode film was patterned.

[0304] The thus obtained laminate was washed with ultrasonic waves and boiled with ethanol.

Next, the inside of the sputtering apparatus was evacuated to 1 × 10 ⁻⁴ Pa or less while being fixed to the substrate holder of the sputtering apparatus.

While maintaining the reduced pressure, N, N′-diphenyl-N, N′-bis [N- (4
-Methylphenyl) -N-phenyl- (4-aminophenyl)]-1,1′-biphenyl-4,4′-diamine (ATP) at a deposition rate of 0.2 nm / sec.
To form a hole injection layer.

[0307]

Embedded image Next, while maintaining the reduced pressure, N, N′-bis (m-methylphenyl) -N, N′-
Diphenyl-1,1′-biphenyl-4,4′-diamine (TDP) was deposited at a deposition rate of 0.2 nm / sec.
To form a hole transport layer.

[0308]

Embedded image Further, while maintaining the reduced pressure state, a mixture of TDP and Alq ₃ in a ratio of 1: 1 and doped with rubrene represented by the following structural formula at 1% by volume was applied to a total deposition rate of 0.2 nm. / Second to form a first organic light emitting layer by vapor deposition to a thickness of 40 nm.

[0309]

Embedded image Then, while maintaining the reduced pressure, a mixture of TDP and Alq3 at a ratio of 1: 1 was added to DDP represented by the following structural formula.
SMA doped with 2.5% by volume of SMA was deposited to a thickness of 40 nm at an overall deposition rate of 0.2 nm / sec to form a second organic light emitting layer.

[0310]

Embedded image Further, while maintaining the reduced pressure, ALq3 was deposited at a deposition rate of 0.2 nm / sec to a thickness of 50 nm to form an electron injection transport layer.

Next, while maintaining the reduced pressure, AlLi (L
i: 7 atomic%) to a thickness of 1 mm.
Was deposited to a thickness of 200 nm to form an electron injection electrode and an auxiliary electrode, thereby producing an organic EL display panel.

Table 1 shows the results of obtaining the chromaticity of red light emission, the chromaticity of green light emission, and the chromaticity of blue light emission of the organic EL element display panel thus obtained.

[0313]

[Table 1] Furthermore, glass sealing was performed to obtain an organic EL display device.

The obtained organic EL display device flickered in accordance with the on / off operation of the TFT.

Example 2 As a transparent substrate, # 7 manufactured by Corning Japan KK
Using a 059 glass substrate, exactly as in Example 1,
A TFT array was formed.

Next, the organic E on which the TFT array was formed was formed.
Pigment Red 254 represented by Structural Formula (1) as a green pigment, tertiary butyl titanium phthalocyanine represented by Structural Formula (2) as a blue pigment, and Is subjected to mask deposition of monomethyl copper phthalocyanine represented by the structural formula (3) to form a color filter composed of a first color filter, a second color filter, and a third color filter formed adjacent to each other. did. The measured film thicknesses of the first color filter corresponding to the red filter, the second color filter corresponding to the green color filter, and the third color filter corresponding to the blue color filter are 485 angstroms, 612 angstroms, respectively. It was 396 angstroms.

Further, a passivation film was formed by sputtering, a transparent electrode (ITO) film was formed, and the transparent electrode film was patterned in exactly the same manner as in Example 1.

The thus obtained laminate was washed with ultrasonic waves and washed with boiling water using ethanol. Then, in the same manner as in Example 1, the hole injection layer, the hole transport layer, and the first Forming an organic light emitting layer, a second organic light emitting layer, an electron injection transport layer, an electron injection electrode, and an auxiliary electrode;
Created a display panel.

Here, the first organic light emitting layer and the second organic light emitting layer are each formed by depositing an organic compound which emits red light at a position corresponding to the first color filter. An organic compound that emits green light was deposited at a position corresponding to the third color filter, and an organic compound that emitted blue light was deposited at a position corresponding to the third color filter.

Table 2 shows the results of obtaining the chromaticity of red light emission, the chromaticity of green light emission, and the chromaticity of blue light emission of the organic EL element display panel thus obtained.

[0321]

[Table 2] Furthermore, glass sealing was performed to obtain an organic EL display device.

The obtained organic EL display device flickered in accordance with the on / off operation of the TFT.

Comparative Example As a transparent substrate, # 7 manufactured by Corning Japan KK
Using a 059 glass substrate, exactly as in Example 1,
A TFT array was formed.

Next, a red color resist for liquid crystal (CR7001 manufactured by Fuji Photo Film Orin Co., Ltd.) and a green color resist for liquid crystal (CG7 manufactured by Fuji Photo Film Orin Co., Ltd.) are formed on a transparent substrate on which an organic EL element is to be formed.
001) and a blue color resist for liquid crystal (CB7001 manufactured by Fuji Photo Film Orin Co., Ltd.) so as to have a thickness of 1.5 μm, respectively. A color filter composed of a second color filter and a third color filter was formed, and a CT made by Fuji Photo Film Orin Co., Ltd. was patterned thereon to form an overcoat layer.

After forming a color filter and an overcoat layer on a transparent substrate, the same procedures as in Example 1 were carried out.
A passivation film made of silicon oxide is formed on the color filter by sputtering in the same manner as in Example 1, and a transparent electrode (ITO) film is formed on the passivation film by sputtering, and the transparent electrode film is patterned. did.

The thus obtained laminate was washed with ultrasonic waves and washed with boiling water with ethanol. Then, in the same manner as in Example 1, the hole injection layer, the hole transport layer, and the first Forming an organic light emitting layer, a second organic light emitting layer, an electron injection transport layer, an electron injection electrode, and an auxiliary electrode;
Created a display panel.

Table 3 shows the results obtained for the chromaticity of red light emission, green light emission, and blue light emission of the organic EL element display panel thus obtained.

[0328]

[Table 3] Furthermore, glass sealing was performed to obtain an organic EL display device.

The obtained organic EL display device flickered in accordance with the on / off operation of the TFT.

As is clear from the comparison of Tables 1 and 2 with Table 3, from the above results, the color filters according to Examples 1 and 2 manufactured using the present invention were compared with those manufactured by the photolithography process. It has a color purity equal to or higher than that of the example color filter, and therefore, according to the present invention, generally, when the thickness of the color filter is reduced, the photolithography process is performed despite the lower color purity. The same or higher color purity can be reproduced with a film thickness of one-fourth or less of the color filter according to the comparative example prepared in the above, and it is possible to reduce the cost, significantly reduce the thickness, and to increase the It has been found that a high quality organic EL device can be obtained.

The present invention is not limited to the above-described embodiments and examples, and various modifications can be made within the scope of the invention described in the claims, which are also included in the scope of the present invention. It goes without saying that it is included.

For example, in the embodiment shown in FIGS. 1 to 7, the color filter 2 is formed by depositing an organic pigment and / or an organic dye by mask.
Not only organic pigments and / or organic dyes but also inorganic pigments can be mask-deposited to form the color filter 2, or two or more organic pigments, two or more organic dyes or two or more inorganic pigments Alternatively, the color filter 2 may be formed by depositing two or more kinds of organic pigments and two or more kinds of organic dyes or two or more kinds of inorganic pigments and two or more kinds of organic dyes by mask.

In the embodiment shown in FIGS. 1 to 7, the color filter 2 is formed by vapor deposition of an organic pigment and / or an organic dye, but the color filter 2 is formed by vapor deposition. It is not always necessary to form the color filter 2 by mask evaporation.

Also, in the embodiment shown in FIGS. 1 and 2, the color filter 2 is formed on the substrate 1, and in the embodiment shown in FIGS. In the embodiment formed on the hole injection electrode 4 and shown in FIG. 5 and FIG. 7, the color filter 2 has a side on which the first organic light emitting layer 7 and the second organic light emitting layer 8 are provided. Are formed on the surface of the substrate 1 on the opposite side, and in the embodiment shown in FIG. 6, the color filter 2 is formed on the fluorescence conversion layer 13, but the organic EL element is And the position of the color filter 2 can be arbitrarily determined.

Further, in the embodiments shown in FIGS. 1 to 7, each of the organic EL elements has a first organic light emitting layer 7 and a second organic light emitting layer 8, It is not always necessary that the organic EL element is provided with two organic light emitting layers, and even if the organic light emitting layer is a single layer, and if necessary, three or more organic light emitting layers are provided. May be.

In the embodiments shown in FIGS. 1 to 7, each of the organic EL elements has a hole injection layer 5 and a hole transport layer 6, but the hole injection layer 5 The hole transport layer 6 can be replaced with a single layer hole transport layer having both functions of the hole injection layer 5 and the hole transport layer 6.

Further, in the embodiments shown in FIGS. 1 to 7, each of the organic EL elements has a hole injection layer 5 formed of an organic material and a hole transport layer 6 formed of an organic material. However, a high-resistance inorganic hole injecting and transporting layer formed of an inorganic material can be provided instead of, or in addition to, these.

Further, in the embodiments shown in FIGS. 1 to 7, the organic EL
And the electron injection layer 10, and the electron transport layer 9 and the electron injection layer 10 are replaced by a single electron injection layer having both functions of the electron transport layer 9 and the electron injection layer 10. Can be replaced by

Further, in the embodiments shown in FIGS. 1 to 7, each of the organic EL devices has an electron transport layer 9 and an electron injection layer 10, but instead of these, Alternatively, a high-resistance inorganic electron injecting and transporting layer formed of an inorganic material can be provided together with these.

[0340]

According to the present invention, it is possible to provide an organic EL display device which can be manufactured at low cost, can be thinned, has high quality, and has a good yield.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an organic EL device according to a preferred embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of an organic EL device according to another preferred embodiment of the present invention.

FIG. 3 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

FIG. 4 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

FIG. 5 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

FIG. 6 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

FIG. 7 is a schematic sectional view of an organic EL device according to still another preferred embodiment of the present invention.

FIG. 8 is a TF for driving an organic EL element of an organic EL display device according to a preferred embodiment of the present invention.
It is a schematic plan view of a T array.

FIG. 9 is a process chart showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

FIG. 10 is a process chart showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

FIG. 11 is a process chart showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

FIG. 12 is a process chart showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

FIG. 13 is a process chart showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

FIG. 14 is a process chart showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

FIG. 15 is a process chart showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

FIG. 16 is a process chart showing a manufacturing process of a switching element according to a preferred embodiment of the present invention.

FIG. 17 is a block diagram showing an example of a conventional active matrix type organic EL display device.

FIG. 18 is an enlarged circuit diagram of a part A in FIG. 17;

[Explanation of symbols]

Reference Signs List 1 substrate 2 color filter 2a first color filter 2b second color filter 2c third color filter 3 passivation layer 4 hole injection electrode 5 hole injection layer 6 hole transport layer 7 first organic light emitting layer 8 second organic Emission layer 9 Electron transport layer 10 Electron injection layer 11 Electron injection electrode 12 Drive power supply 13 Fluorescence conversion layer 14 Passivation layer 21 Source bus 22 Gate bus 23 Source electrode 23a Contact hole 24 Drain wiring 24a Contact hole 24b Contact hole 25 Gate line 26 Drain Wiring 26a Contact hole 27 Source electrode 27a Contact hole 28 Capacitor 31 Silicon substrate 32 Silicon substrate 33 Earth bus 50 Substrate 51 α-Si layer 51a Active layer (polysilicon airer) 52) Insulating gate 53 Gate electrode 55 Ion doping 60 Silicon dioxide film 61 Source wiring electrode 62 Drain wiring electrode 63 Insulating film 65 Hole injection electrode 66 Connection metal layer 70 Excimer laser 90 Organic EL display device 91 Screen 92 X direction peripheral drive circuit (Shift register X axis) 93 Y direction peripheral drive circuit (shift register Y axis) X1, X2 X direction signal line Y1, Y2 Y direction signal line Vdd1, Vdd2 Power supply line Ty11, Ty12, Ty21, Ty22 TFT transistor M11 for switch, M12, M21, M22 Current controlling TFT transistors EL11, EL12, EL21, EL22 Organic EL elements C11, C12, ..., C21, C22 Capacitor

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) G09F 9/30 349 G09F 9/30 349B 365 365Z H05B 33/08 H05B 33/08 33/14 33/14 A (72) Inventor Mutsuko Nakano 1-13-1 Nihombashi, Chuo-ku, Tokyo F-term in TDK Corporation 2H048 BA52 BA53 BB02 BB41 3K007 AB04 AB18 BA06 BB06 CA01 CB01 DA01 DB03 EA04 EB00 FA01 4K029 AA09 BA62 BB02 BC07 BD00 CA01 DB06 EA01 FA07 HA01 5C094 AA08 AA15 AA42 AA43 BA03 BA27 CA19 CA24 DA13 DB01 DB04 DB10 EA04 EA05 EB02 ED03 ED20 FA01 FB01 FB02 FB12 FB14 FB15 GB10 JA11

Claims (29)

[Claims] A switching element comprising a non-single-crystal silicon substrate formed on a substrate, a control electrode and a set of controlled electrodes formed on the substrate, and the switching element formed on the substrate; A plurality of organic EL elements driven by the elements, each of the organic EL elements including at least one organic light emitting layer between two electrodes at least one of which is transparent, and further comprising a pigment and / or an organic light emitting layer. An organic EL display device comprising a color filter layer formed by depositing a dye. 2. The organic EL display device according to claim 1, wherein the pigment includes an organic pigment. 3. The organic EL display device according to claim 1, wherein the color filter layer is formed by co-evaporating a pigment and an organic dye. 4. The organic EL display device according to claim 1, wherein the color filter layer is formed by depositing two or more kinds of pigments and / or two or more kinds of organic dyes. 5. The organic E according to claim 4, wherein the color filter layer is formed by co-evaporating two or more kinds of pigments and / or two or more kinds of organic dyes.
L display device. 6. The color filter layer according to claim 1, wherein two or more vapor-deposited layers formed by vapor-depositing a pigment and / or an organic dye, respectively, are laminated. Organic EL display device. 7. The organic EL display device according to claim 6, wherein each of the deposition layers is formed by co-evaporation of two or more kinds of pigments and / or two or more kinds of organic dyes. 8. The organic EL display device according to claim 1, wherein the color filter layer is formed by mask vapor deposition of a pigment and / or an organic dye. 9. The color filter layer having a thickness of 1.5
The organic EL display device according to any one of claims 1 to 8, wherein the thickness is equal to or less than μm. 10. The substrate is formed of a transparent substrate, and the two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the color filter layer and the hole injection electrode are formed on the substrate. 10. The organic EL display device according to claim 1, further comprising the at least one organic light emitting layer and the electron injection electrode in this order. 11. The two electrodes include a transparent hole injection electrode and an electron injection electrode, and the electron injection electrode, the at least one organic light emitting layer, the hole injection electrode, and the collar are formed on the substrate. The filter layer is provided in this order, The filter layer is provided in this order.
The organic EL display device according to any one of the above items. 12. The substrate is formed of a transparent substrate, the two electrodes are formed of a transparent hole injection electrode and an electron injection electrode, and the color filter layer is provided on one surface of the substrate. 10. The method according to claim 1, wherein the other surface of the substrate includes the hole injection electrode, the at least one organic light emitting layer, and the electron injection electrode in this order. Organic EL display device. 13. The organic EL display device according to claim 1, further comprising a passivation layer on a surface of the color filter layer. 14. A light-emitting device according to claim 1, further comprising a fluorescent conversion layer on the hole injection electrode side of the color filter layer, the fluorescent conversion layer converting light emitted from the at least one organic light-emitting layer into light having a predetermined wavelength. The organic EL display device according to claim 10. 15. A fluorescent conversion layer for converting light emitted from the at least one organic light emitting layer into light having a predetermined wavelength on one surface of the substrate, wherein the fluorescent conversion layer comprises:
The organic EL display device according to claim 12, wherein the organic EL display device is disposed on the substrate side of the color filter layer. 16. A fluorescence conversion layer for converting light emitted from the at least one organic light-emitting layer into light having a predetermined wavelength on the other surface of the substrate, wherein the fluorescence conversion layer comprises:
The organic EL display device according to claim 12, wherein the organic EL display device is disposed between the electrode and the substrate. 17. The method according to claim 14, wherein the fluorescent conversion layer is formed by depositing a fluorescent substance.
The organic EL display device according to any one of the above items. 18. The method according to claim 1, wherein the fluorescent conversion layer is formed by depositing two or more kinds of fluorescent substances.
8. The organic EL display device according to 7. 19. The organic EL display device according to claim 18, wherein the fluorescence conversion layer is formed by co-evaporating two or more kinds of fluorescent substances. 20. The organic EL according to claim 18, wherein the fluorescence conversion layer is formed by laminating two or more vapor deposition layers each formed by vapor deposition of a fluorescent substance.
Display device. 21. The method according to claim 20, wherein each of the deposition layers is formed by co-evaporation of two or more kinds of fluorescent substances.
3. The organic EL display device according to claim 1. 22. The organic EL display device according to claim 14, further comprising a passivation layer on the fluorescence conversion layer and / or the color filter. 23. The organic EL display device according to claim 13, wherein the passivation layer is formed of a silicon compound. 24. The organic EL display device according to claim 23, wherein the passivation layer contains silicon oxide and / or silicon nitride. 25. The organic EL display device according to claim 1, wherein the at least one organic light emitting layer is constituted by two organic light emitting layers. 26. The organic EL display device according to claim 1, wherein the at least one organic light emitting layer is formed by vapor deposition. 27. The at least one organic light emitting layer,
The organic EL display device according to any one of claims 1 to 26, wherein the organic EL display device is formed of an organic light emitting layer that emits white light having a continuous emission spectrum of at least 380 to 780 nm. 28. The at least one organic light emitting layer,
The organic EL display device according to claim 27, wherein the organic EL display device is formed of an organic light emitting layer that emits white light having a continuous emission spectrum of 430 to 650 nm or less. 29. The organic EL display device according to claim 1, wherein the switching element comprises a thin film transistor.