JP2002170382A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2002170382A
JP2002170382A JP2001258399A JP2001258399A JP2002170382A JP 2002170382 A JP2002170382 A JP 2002170382A JP 2001258399 A JP2001258399 A JP 2001258399A JP 2001258399 A JP2001258399 A JP 2001258399A JP 2002170382 A JP2002170382 A JP 2002170382A
Authority
JP
Japan
Prior art keywords
level
signal
potential
cell
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001258399A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002170382A5 (https=
Inventor
Tadashi Miyagawa
正 宮川
Yukito Owaki
幸人 大脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001258399A priority Critical patent/JP2002170382A/ja
Publication of JP2002170382A publication Critical patent/JP2002170382A/ja
Publication of JP2002170382A5 publication Critical patent/JP2002170382A5/ja
Pending legal-status Critical Current

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JP2001258399A 2000-09-20 2001-08-28 半導体記憶装置 Pending JP2002170382A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001258399A JP2002170382A (ja) 2000-09-20 2001-08-28 半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000284709 2000-09-20
JP2000-284709 2000-09-20
JP2001258399A JP2002170382A (ja) 2000-09-20 2001-08-28 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2002170382A true JP2002170382A (ja) 2002-06-14
JP2002170382A5 JP2002170382A5 (https=) 2005-07-07

Family

ID=26600298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001258399A Pending JP2002170382A (ja) 2000-09-20 2001-08-28 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP2002170382A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7016215B2 (en) 2002-09-06 2006-03-21 Kabushiki Kaisha Toshiba Ferroelectric memory device with a spare memory cell array
US7016216B2 (en) 2002-12-25 2006-03-21 Kabushiki Kaisha Toshiba Ferroelectric memory device having ferroelectric capacitor and method of reading out data therefrom
US7164303B2 (en) 2003-11-25 2007-01-16 Seiko Epson Corporation Delay circuit, ferroelectric memory device and electronic equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7016215B2 (en) 2002-09-06 2006-03-21 Kabushiki Kaisha Toshiba Ferroelectric memory device with a spare memory cell array
US7016216B2 (en) 2002-12-25 2006-03-21 Kabushiki Kaisha Toshiba Ferroelectric memory device having ferroelectric capacitor and method of reading out data therefrom
US7164303B2 (en) 2003-11-25 2007-01-16 Seiko Epson Corporation Delay circuit, ferroelectric memory device and electronic equipment

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