JP2002158172A - 半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置 - Google Patents

半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置

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Publication number
JP2002158172A
JP2002158172A JP2001244163A JP2001244163A JP2002158172A JP 2002158172 A JP2002158172 A JP 2002158172A JP 2001244163 A JP2001244163 A JP 2001244163A JP 2001244163 A JP2001244163 A JP 2001244163A JP 2002158172 A JP2002158172 A JP 2002158172A
Authority
JP
Japan
Prior art keywords
thin film
heat treatment
semiconductor thin
semiconductor
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001244163A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002158172A5 (enExample
Inventor
Junichi Sato
淳一 佐藤
Hideharu Nakajima
英晴 中嶋
Setsuo Usui
節夫 碓井
Yasuhiro Sakamoto
安広 坂本
Yoshifumi Mori
芳文 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001244163A priority Critical patent/JP2002158172A/ja
Priority to US09/946,898 priority patent/US6746942B2/en
Publication of JP2002158172A publication Critical patent/JP2002158172A/ja
Priority to US10/828,882 priority patent/US7365358B2/en
Publication of JP2002158172A5 publication Critical patent/JP2002158172A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
JP2001244163A 2000-09-05 2001-08-10 半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置 Pending JP2002158172A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001244163A JP2002158172A (ja) 2000-09-05 2001-08-10 半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置
US09/946,898 US6746942B2 (en) 2000-09-05 2001-09-05 Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
US10/828,882 US7365358B2 (en) 2000-09-05 2004-04-21 Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000269274 2000-09-05
JP2000-269274 2000-09-05
JP2001244163A JP2002158172A (ja) 2000-09-05 2001-08-10 半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置

Publications (2)

Publication Number Publication Date
JP2002158172A true JP2002158172A (ja) 2002-05-31
JP2002158172A5 JP2002158172A5 (enExample) 2006-12-21

Family

ID=26599310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001244163A Pending JP2002158172A (ja) 2000-09-05 2001-08-10 半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置

Country Status (1)

Country Link
JP (1) JP2002158172A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023538218A (ja) * 2020-07-19 2023-09-07 アプライド マテリアルズ インコーポレイテッド プラズマ堆積膜の水素管理

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023538218A (ja) * 2020-07-19 2023-09-07 アプライド マテリアルズ インコーポレイテッド プラズマ堆積膜の水素管理
JP7678078B2 (ja) 2020-07-19 2025-05-15 アプライド マテリアルズ インコーポレイテッド プラズマ堆積膜の水素管理

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