JP2002146523A5 - Sputtering target and sputtering device, thin film, electronic component using it - Google Patents
Sputtering target and sputtering device, thin film, electronic component using it Download PDFInfo
- Publication number
- JP2002146523A5 JP2002146523A5 JP2001262186A JP2001262186A JP2002146523A5 JP 2002146523 A5 JP2002146523 A5 JP 2002146523A5 JP 2001262186 A JP2001262186 A JP 2001262186A JP 2001262186 A JP2001262186 A JP 2001262186A JP 2002146523 A5 JP2002146523 A5 JP 2002146523A5
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- sputtering target
- thin film
- target
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title description 17
- 239000010409 thin film Substances 0.000 title description 8
- 238000004544 sputter deposition Methods 0.000 title description 5
- 239000010408 film Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 230000003628 erosive Effects 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052803 cobalt Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Description
【特許請求の範囲】
【請求項１】 ターゲット本体と、
前記ターゲット本体の非エロージョン領域の少なくとも一部に設けられ、ＰＶＤ法またはＣＶＤ法により形成された再付着粒子剥離防止膜と
を具備することを特徴とするスパッタリングターゲット。
【請求項２】 請求項１記載のスパッタリングターゲットにおいて、
前記ターゲット本体はバッキングプレートにより支持されていることを特徴とするスパッタリングターゲット。
【請求項３】 ターゲット本体と、
前記ターゲット本体を支持するバッキングプレートと、
前記バッキングプレートの表面の少なくとも一部に設けられ、ＰＶＤ法またはＣＶＤ法により形成された再付着粒子剥離防止膜と
を具備することを特徴とするスパッタリングターゲット。
【請求項４】 請求項３記載のスパッタリングターゲットにおいて、
さらに、前記ターゲット本体の非エロージョン領域の少なくとも一部に前記再付着粒子剥離防止膜が形成されていることを特徴とするスパッタリングターゲット。
【請求項５】 請求項１ないし請求項４のいずれか１項記載のスパッタリングターゲットにおいて、
前記再付着粒子剥離防止膜は、スパッタリング法、イオンプレーティング法またはＣＶＤ法により形成された金属薄膜または金属化合物薄膜からなることを特徴とするスパッタリングターゲット。
【請求項６】 請求項１ないし請求項５のいずれか１項記載のスパッタリングターゲットにおいて、
前記再付着粒子剥離防止膜は、前記ターゲット本体を構成する金属元素を含む金属薄膜または金属化合物薄膜からなることを特徴とするスパッタリングターゲット。
【請求項７】 請求項１ないし請求項６のいずれか１項記載のスパッタリングターゲットにおいて、
前記ターゲット本体は、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、Ｐｔ、Ａｇ、Ｉｒ、Ｒｕ、Ｆｅ、Ｎｉ、Ｃｏ、Ａｌ、Ｃｕ、ＳｉおよびＧｅから選ばれる金属元素の単体、もしくは前記金属元素を含む合金または化合物からなることを特徴するスパッタリングターゲット。
【請求項８】 真空容器と、前記真空容器内に配置される被成膜試料保持部と、前記真空容器内に前記被成膜試料保持部と対向して配置されるターゲット部とを具備するスパッタリング装置において、
前記ターゲット部は、請求項１ないし請求項７のいずれか１項記載のスパッタリングターゲットを有することを特徴とするスパッタリング装置。
【請求項９】 請求項１ないし請求項７のいずれか１項記載のスパッタリングターゲットを用いて形成されたことを特徴とする薄膜。
【請求項１０】 請求項９記載の薄膜を具備することを特徴とする電子部品。
[Claims]
1. A target body,
A redeposition particle peeling prevention film provided on at least a part of the non-erosion region of the target body and formed by a PVD method or a CVD method;
A sputtering target comprising:
2. The sputtering target according to claim 1, wherein
The said target main body is supported by the backing plate, The sputtering target characterized by the above-mentioned.
3. A target body,
A backing plate supporting the target body,
A redeposition particle peeling prevention film provided on at least a part of the surface of the backing plate and formed by a PVD method or a CVD method;
A sputtering target comprising:
4. The sputtering target according to claim 3, wherein
Further, the sputtering target is characterized in that the reattachment particle separation preventing film is formed on at least a part of the non-erosion region of the target body.
5. The sputtering target according to claim 1, wherein:
The sputtering target, wherein the reattachment particle peeling prevention film is formed of a metal thin film or a metal compound thin film formed by a sputtering method, an ion plating method, or a CVD method.
6. The sputtering target according to any one of claims 1 to 5, wherein
The sputtering target, wherein the reattachment particle separation preventing film is formed of a metal thin film or a metal compound thin film containing a metal element constituting the target main body.
7. The sputtering target according to any one of claims 1 to 6, wherein
The target body is made of a metal element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Pt, Ag, Ir, Ru, Fe, Ni, Co, Al, Cu, Si and Ge. A sputtering target comprising a simple substance or an alloy or a compound containing the metal element.
8. A vacuum container, a film-holding sample holding unit disposed in the vacuum container, and a target unit disposed in the vacuum container so as to face the film-holding sample holding unit. In sputtering equipment,
A sputtering apparatus, wherein the target section includes the sputtering target according to any one of claims 1 to 7.
9. A thin film formed by using the sputtering target according to claim 1.
10. An electronic component comprising the thin film according to claim 9.
【０００１】
【発明の属する技術分野】
本発明は、各種電子部品の配線膜、電極、素子構成膜などを形成する際に用いられるスパッタリングターゲットとそれを用いたスパッタリング装置、薄膜、電子部品に関する。
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a sputtering target used for forming a wiring film, an electrode, an element constituent film, and the like of various electronic components, a sputtering apparatus using the sputtering target , a thin film, and an electronic component .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001262186A JP4820508B2 (en) | 2000-08-30 | 2001-08-30 | Sputtering target and manufacturing method thereof, sputtering apparatus, thin film manufacturing method, electronic component manufacturing method |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-261376 | 2000-08-30 | ||
| JP2000261376 | 2000-08-30 | ||
| JP2000261376 | 2000-08-30 | ||
| JP2001262186A JP4820508B2 (en) | 2000-08-30 | 2001-08-30 | Sputtering target and manufacturing method thereof, sputtering apparatus, thin film manufacturing method, electronic component manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002146523A JP2002146523A (en) | 2002-05-22 |
| JP2002146523A5 true JP2002146523A5 (en) | 2008-10-09 |
| JP4820508B2 JP4820508B2 (en) | 2011-11-24 |
Family
ID=26598826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001262186A Expired - Fee Related JP4820508B2 (en) | 2000-08-30 | 2001-08-30 | Sputtering target and manufacturing method thereof, sputtering apparatus, thin film manufacturing method, electronic component manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4820508B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006144119A (en) * | 2004-10-19 | 2006-06-08 | Kobelco Kaken:Kk | Layered product for sputtering aluminum-neodymium alloys |
| CN102224276B (en) * | 2009-03-03 | 2014-02-19 | 吉坤日矿日石金属株式会社 | Sputtering target and process for producing same |
| JP5333144B2 (en) * | 2009-10-14 | 2013-11-06 | 住友金属鉱山株式会社 | Sintered body target for thin film manufacturing and its manufacturing method |
| US8562794B2 (en) | 2010-12-14 | 2013-10-22 | Asahi Glass Company, Limited | Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank |
| JP5779491B2 (en) | 2011-12-13 | 2015-09-16 | 株式会社アルバック | Target device, sputtering device, and method of manufacturing target device |
| US9870902B2 (en) * | 2013-04-30 | 2018-01-16 | Kobelco Research Institute, Inc. | Li-containing oxide target assembly |
| WO2016021101A1 (en) * | 2014-08-08 | 2016-02-11 | 株式会社アルバック | Target assembly |
| US20160053365A1 (en) * | 2014-08-20 | 2016-02-25 | Honeywell International Inc. | Encapsulated composite backing plate |
-
2001
- 2001-08-30 JP JP2001262186A patent/JP4820508B2/en not_active Expired - Fee Related
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